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    Organization of blocks within a nonvolatile memory unit to effectively decrease sector write operation time
    21.
    发明授权
    Organization of blocks within a nonvolatile memory unit to effectively decrease sector write operation time 有权
    在非易失性存储器单元内组织块以有效地减少扇区写入操作时间

    公开(公告)号：US06141249A

    公开(公告)日：2000-10-31

    申请号：US389994

    申请日：1999-09-03

    申请人： Petro Estakhri ,  Berhanu Iman

    发明人： Petro Estakhri ,  Berhanu Iman

    IPC分类号： G11C16/02 ,  G06F12/00 ,  G06F12/06 ,  G11C7/10 ,  G11C8/12 ,  G11C16/08 ,  G11C16/10 ,  G11C16/04

    CPC分类号： G11C8/12 ,  G11C16/08 ,  G11C16/10 ,  G11C16/102

    摘要： An embodiment of the present invention includes a nonvolatile memory system for storing sector information in storage locations within nonvolatile memory organized into blocks, a plurality of blocks defining a super block and each block having a predetermined plurality of sectors. The nonvolatile memory system includes a controller for shifting sector information to a first and a second block of a particular super block and writing sector information to the first block of the particular super block, wherein shifting to the second block occurs entirely during the writing to the first block thereby decreasing the time required to perform write operations to blocks and increasing overall system performance.

    摘要翻译： 本发明的实施例包括一种非易失性存储器系统，用于将组织成块的非易失性存储器内的存储位置中的扇区信息存储，定义超级块的多个块以及具有预定多个扇区的每个块。 非易失性存储器系统包括用于将扇区信息移动到特定超级块的第一和第二块并将扇区信息写入特定超级块的第一块的控制器，其中转移到第二块完全在写入到第二块期间发生 第一块，从而减少对块执行写入操作所需的时间并提高整体系统性能。

    Space management for managing high capacity nonvolatile memory
    22.
    发明授权
    Space management for managing high capacity nonvolatile memory 有权
    用于管理高容量非易失性存储器的空间管理

    公开(公告)号：US6134151A

    公开(公告)日：2000-10-17

    申请号：US519226

    申请日：2000-03-06

    申请人： Petro Estakhri ,  Berhanu Iman ,  Min Guo

    发明人： Petro Estakhri ,  Berhanu Iman ,  Min Guo

    IPC分类号： G06F12/02 ,  G11C8/12 ,  G11C16/04 ,  G11C16/08 ,  G11C16/10 ,  G11C16/16

    CPC分类号： G06F12/0246 ,  G11C16/04 ,  G11C16/08 ,  G11C16/102 ,  G11C16/16 ,  G11C8/12

    摘要： In accordance with an embodiment of the present invention, a method and apparatus is disclosed for use in a digital system having a host coupled to at least two nonvolatile memory devices. The host stores digital information in the nonvolatile memory devices and reads the stored digital information from the nonvolatile memory devices. The memory devices are organized into blocks of sectors of information. The method is for erasing digital information stored in the blocks of the nonvolatile memory devices and comprises assigning a predetermined number of blocks, in sequential order, to each of the nonvolatile memory devices, each block having a predetermined number of sectors. The method further comprises forming `super` blocks, each `super` block comprising a plurality of blocks, identifying a particular `super` block having at least two blocks, a first block being located in a first nonvolatile memory device and a second block being located in a second nonvolatile memory device for erasure of the particular `super` block and erasing the first and second selected blocks of the particular `super` block so that erasure of the second block is performed without waiting for completion of the erasure of the first block; and indicating the status of the first and second nonvolatile memory devices to be busy during erasure of the first and second selected blocks, wherein the speed of erase operations in the digital system is substantially increased thereby increasing the overall performance of the digital system.

    摘要翻译： 根据本发明的实施例，公开了一种在具有耦合到至少两个非易失性存储器件的主机的数字系统中使用的方法和装置。 主机将数字信息存储在非易失性存储器件中，并从非易失性存储器件读取所存储的数字信息。 存储器件被组织成块信息块。 该方法是用于擦除存储在非易失性存储器件的块中的数字信息，并且包括按顺序向每个非易失性存储器件分配预定数量的块，每个块具有预定数量的扇区。 该方法还包括形成“超”块，每个“超级”块包括多个块，标识具有至少两个块的特定“超级”块，第一块位于第一非易失性存储器设备中，第二块为 位于第二非易失性存储器件中，用于擦除特定“超”块并擦除特定“超级”块的第一和第二选定块，使得执行第二块的擦除而不用等待完成第一个 块; 并且在擦除第一和第二所选择的块期间指示第一和第二非易失性存储器件正在占用的状态，其中数字系统中的擦除操作的速度被大大增加，从而增加了数字系统的整体性能。

    Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
    25.
    发明申请
    Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices 失效

    公开(公告)号：US20070266201A1

    公开(公告)日：2007-11-15

    申请号：US11404570

    申请日：2006-04-13

    申请人： Petro Estakhri ,  Berhanu Iman

    发明人： Petro Estakhri ,  Berhanu Iman

    IPC分类号： G06F12/00 ,  G06F13/28 ,  G06F12/06

    CPC分类号： G06F12/0238 ,  G06F3/0613 ,  G06F3/064 ,  G06F3/0679 ,  G06F11/1068 ,  G06F12/0246 ,  G11C16/08 ,  G11C16/102 ,  G11C29/765 ,  G11C29/82

    摘要： In one embodiment of the present invention, a memory storage system for storing information organized in sectors within a nonvolatile memory bank is disclosed. The memory bank is defined by sector storage locations spanning across one or more rows of a nonvolatile memory device, each the sector including a user data portion and an overhead portion. The sectors being organized into blocks with each sector identified by a host provided logical block address (LBA). Each block is identified by a modified LBA derived from the host-provided LBA and said virtual PBA, said host-provided LBA being received by the storage device from the host for identifying a sector of information to be accessed, the actual PBA developed by said storage device for identifying a free location within said memory bank wherein said accessed sector is to be stored. The storage system includes a memory controller coupled to the host; and a nonvolatile memory bank coupled to the memory controller via a memory bus, the memory bank being included in a non-volatile semiconductor memory unit, the memory bank has storage blocks each of which includes a first row-portion located in said memory unit, and a corresponding second row-portion located in each of the memory unit, each of the memory row-portions provides storage space for two of said sectors, wherein the speed of performing write operations is increased by writing sector information to the memory unit simultaneously.

    Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
    26.
    发明授权
    Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices 有权

    公开(公告)号：US07111140B2

    公开(公告)日：2006-09-19

    申请号：US10832421

    申请日：2004-04-26

    申请人： Petro Estakhri ,  Berhanu Iman

    发明人： Petro Estakhri ,  Berhanu Iman

    IPC分类号： G06F12/00 ,  G11C8/00 ,  G11C16/04

    CPC分类号： G06F12/0238 ,  G06F3/0613 ,  G06F3/064 ,  G06F3/0679 ,  G06F11/1068 ,  G06F12/0246 ,  G11C16/08 ,  G11C16/102 ,  G11C29/765 ,  G11C29/82

    摘要： In one embodiment of the present invention, a memory storage system for storing information organized in sectors within a nonvolatile memory bank is disclosed. The memory bank is defined by sector storage locations spanning across one or more rows of a nonvolatile memory device, each the sector including a user data portion and an overhead portion. The sectors being organized into blocks with each sector identified by a host provided logical block address (LBA). Each block is identified by a modified LBA derived from the host-provided LBA and said virtual PBA, said host-provided LBA being received by the storage device from the host for identifying a sector of information to be accessed, the actual PBA developed by said storage device for identifying a free location within said memory bank wherein said accessed sector is to be stored. The storage system includes a memory controller coupled to the host; and a nonvolatile memory bank coupled to the memory controller via a memory bus, the memory bank being included in a non-volatile semiconductor memory unit, the memory bank has storage blocks each of which includes a first row-portion located in said memory unit, and a corresponding second row-portion located in each of the memory unit, each of the memory row-portions provides storage space for two of said sectors, wherein the speed of performing write operations is increased by writing sector information to the memory unit simultaneously.

    Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
    27.
    发明授权
    Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices 有权
    通过将扇区同时写入多个闪存设备来提高闪存设备的存储性能

    公开(公告)号：US06757800B1

    公开(公告)日：2004-06-29

    申请号：US10071972

    申请日：2002-02-05

    申请人： Petro Estakhri ,  Berhanu Iman

    发明人： Petro Estakhri ,  Berhanu Iman

    IPC分类号： G06F1200

    CPC分类号： G11C29/765 ,  G06F3/0613 ,  G06F3/064 ,  G06F3/0659 ,  G06F3/0679 ,  G06F11/1068 ,  G06F12/0246 ,  G11C16/08 ,  G11C16/102 ,  G11C29/82

    摘要： In one embodiment of the present invention, a memory storage system for storing information organized in sectors within a nonvolatile memory bank is disclosed. The memory bank is defined by sector storage locations spanning across one or more rows of a nonvolatile memory device, each the sector including a user data portion and an overhead portion. The sectors being organized into blocks with each sector identified by a host provided logical block address (LBA). Each block is identified by a modified LBA derived from the host-provided LBA and said virtual PBA, said host-provided LBA being received by the storage device from the host for identifying a sector of information to be accessed, the actual PBA developed by said storage device for identifying a free location within said memory bank wherein said accessed sector is to be stored. The storage system includes a memory controller coupled to the host; and a nonvolatile memory bank coupled to the memory controller via a memory bus, the memory bank being included in a nonvolatile semiconductor memory unit, the memory bank has storage blocks each of which includes a first row-portion located in said memory unit, and a corresponding second row-portion located in each of the memory unit, each of the memory row-portions provides storage space for two of said sectors, wherein the speed of performing write operations is increased by writing sector information to the memory unit simultaneously.

    摘要翻译： 在本发明的一个实施例中，公开了一种用于存储组织在非易失性存储器组内的扇区中的信息的存储器存储系统。 存储体由跨越一行或多行非易失性存储器件的扇区存储位置定义，每个扇区包括用户数据部分和开销部分。 扇区被组织成块，其中由主机标识的每个扇区提供逻辑块地址（LBA）。 每个块由来自主机提供的LBA和所述虚拟PBA的修改的LBA识别，所述主机提供的LBA由存储设备从主机接收，用于识别要访问的信息的扇区，由所述虚拟PBA开发的实际PBA 存储设备，用于识别所述存储器组中的空闲位置，其中所述访问扇区将被存储。 存储系统包括耦合到主机的存储器控​​制器; 以及经由存储器总线耦合到存储器控制器的非易失性存储器组，所述存储体包括在非易失性半导体存储器单元中，所述存储体具有存储块，每个存储块包括位于所述存储器单元中的第一行部分， 位于每个存储器单元中的对应的第二行部分中，每个存储器行部分为两个所述扇区提供存储空间，其中通过将扇区信息同时写入存储器单元来增加执行写入操作的速度。

    Space management for managing high capacity nonvolatile memory
    28.
    发明授权
    Space management for managing high capacity nonvolatile memory 失效
    用于管理高容量非易失性存储器的空间管理

    公开(公告)号：US06262918B1

    公开(公告)日：2001-07-17

    申请号：US09610545

    申请日：2000-06-30

    申请人： Petro Estakhri ,  Berhanu Iman ,  Min Guo

    发明人： Petro Estakhri ,  Berhanu Iman ,  Min Guo

    IPC分类号： G11C1604

    CPC分类号： G11C8/12 ,  G06F12/0246 ,  G06F2212/7205 ,  G06F2212/7208 ,  G11C16/04 ,  G11C16/16

    摘要： In accordance with an embodiment of the present invention, a method and apparatus is disclosed for use in a digital system having a host coupled to at least two nonvolatile memory devices. The host stores digital information in the nonvolatile memory devices and reads the stored digital information from the nonvolatile memory devices. The memory devices are organized into blocks of sectors of information. The method is for erasing digital information stored in the blocks of the nonvolatile memory devices and comprises assigning a predetermined number of blocks, in sequential order, to each of the nonvolatile memory devices, each block having a predetermined number of sectors. The method further comprises forming ‘super’ blocks, each ‘super’ block comprising a plurality of blocks, identifying a particular ‘super’ block having at least two blocks, a first block being located in a first nonvolatile memory device and a second block being located in a second nonvolatile memory device for erasure of the particular ‘super’ block and erasing the first and second selected blocks of the particular ‘super’ block so that erasure of the second block is performed without waiting for completion of the erasure of the first block; and indicating the status of the first and second nonvolatile memory devices to be busy during erasure of the first and second selected blocks, wherein the speed of erase operations in the digital system is substantially increased thereby increasing the overall performance of the digital system.

    摘要翻译： 根据本发明的实施例，公开了一种在具有耦合到至少两个非易失性存储器件的主机的数字系统中使用的方法和装置。 主机将数字信息存储在非易失性存储器件中，并从非易失性存储器件读取所存储的数字信息。 存储器件被组织成块信息块。 该方法是用于擦除存储在非易失性存储器件的块中的数字信息，并且包括按顺序向每个非易失性存储器件分配预定数量的块，每个块具有预定数量的扇区。 该方法还包括形成“超”块，每个“超级”块包括多个块，标识具有至少两个块的特定“超级”块，第一块位于第一非易失性存储器件中，第二块为 位于第二非易失性存储器件中，用于擦除特定“超级”块并擦除特定“超级”块的第一和第二选定块，从而执行第二块的擦除，而不必等待完成第一个 块;以及在擦除第一和第二所选择的块期间指示第一和第二非易失性存储器件正在占用的状态，其中数字系统中的擦除操作的速度基本上增加，从而增加了数字系统的整体性能。

    Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
    29.
    发明授权
    Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices 有权
    通过将扇区同时写入多个闪存设备来提高闪存设备的存储性能

    公开(公告)号：US06172906B2

    公开(公告)日：2001-01-09

    申请号：US09521419

    申请日：2000-03-08

    申请人： Petro Estakhri ,  Berhanu Iman

    发明人： Petro Estakhri ,  Berhanu Iman

    IPC分类号： G11C1300

    CPC分类号： G11C16/102 ,  G06F3/0613 ,  G06F3/064 ,  G06F3/0658 ,  G06F3/0679 ,  G06F11/1068 ,  G06F12/0246 ,  G06F2212/1016 ,  G06F2212/7203 ,  G06F2212/7208 ,  G11C16/08 ,  G11C29/765 ,  G11C29/82

    摘要： In one embodiment of the present invention, a memory storage system for storing information organized in sectors within a nonvolatile memory bank is disclosed. The memory bank is defined by sector storage locations spanning across one or more rows of a nonvolatile memory device, each the sector including a user data portion and an overhead portion. The sectors being organized into blocks with each sector identified by a host provided logical block address (LBA). Each block is identified by a modified LBA derived from the host-provided LBA and said virtual PBA, said host-provided LBA being received by the storage device from the host for identifying a sector of information to be accessed, the actual PBA developed by said storage device for identifying a free location within said memory bank wherein said accessed sector is to be stored. The storage system includes a memory controller coupled to the host; and a nonvolatile memory bank coupled to the memory controller via a memory bus, the memory bank being included in a nonvolatile semiconductor memory unit, the memory bank has storage blocks each of which includes a first row-portion located in said memory unit, and a corresponding second row-portion located in each of the memory unit, each of the memory row-portions provides storage space for two of said sectors, wherein the speed of performing write operations is increased by writing sector information to the memory unit simultaneously.

    摘要翻译： 在本发明的一个实施例中，公开了一种用于存储组织在非易失性存储器组内的扇区中的信息的存储器存储系统。 存储体由跨越一行或多行非易失性存储器件的扇区存储位置定义，每个扇区包括用户数据部分和开销部分。 扇区被组织成块，其中由主机标识的每个扇区提供逻辑块地址（LBA）。 每个块由来自主机提供的LBA和所述虚拟PBA的修改的LBA识别，所述主机提供的LBA由存储设备从主机接收，用于识别要访问的信息的扇区，由所述虚拟PBA开发的实际PBA 存储设备，用于识别所述存储器组中的空闲位置，其中所述访问扇区将被存储。 存储系统包括耦合到主机的存储器控​​制器; 以及经由存储器总线耦合到存储器控制器的非易失性存储器组，所述存储体包括在非易失性半导体存储器单元中，所述存储体具有存储块，每个存储块包括位于所述存储器单元中的第一行部分， 位于每个存储器单元中的对应的第二行部分中，每个存储器行部分为两个所述扇区提供存储空间，其中通过将扇区信息同时写入存储器单元来增加执行写入操作的速度。

    Space management for managing high capacity nonvolatile memory
    30.
    发明授权
    Space management for managing high capacity nonvolatile memory 有权

    公开(公告)号：US6034897A

    公开(公告)日：2000-03-07

    申请号：US283728

    申请日：1999-04-01

    申请人： Petro Estakhri ,  Berhanu Iman ,  Min Guo

    发明人： Petro Estakhri ,  Berhanu Iman ,  Min Guo

    IPC分类号： G06F12/02 ,  G11C8/12 ,  G11C16/04 ,  G11C16/08 ,  G11C16/10 ,  G11C16/16

    CPC分类号： G06F12/0246 ,  G11C16/04 ,  G11C16/08 ,  G11C16/102 ,  G11C16/16 ,  G11C8/12

    摘要： In accordance with an embodiment of the present invention, a controller device is disclosed for use in a digital system having a host and nonvolatile memory devices. The controller device is coupled to the host and at least two nonvolatile memory devices. The host stores digital information in the nonvolatile memory unit and reads the stored digital information from the nonvolatile memory unit under the direction of the controller, the memory unit being organized into blocks of sectors of information. The controller device erases the digital information stored in the blocks of the nonvolatile memory devices in-parallel form. The controller device includes a space manager circuit responsive to address information from the host and operative to read, write or erase information in the nonvolatile memory unit based upon the host address information. The space manager assigns a predetermined number of blocks, in sequential order, to each of the nonvolatile memory devices, forms `super` blocks, each `super` block having blocks arranged inparallel, identifies a particular `super` block having at least two blocks, a first block being located in a first nonvolatile memory device and a second block being located in a second nonvolatile memory device, for erasure of the particular `super` block. The first block within the first nonvolatile memory device is first selected for erasure thereof and an erase operation to be performed on the selected first block is initiated. Thereafter, a second block within the second nonvolatile memory device is selected for erasure thereof and an erase operation to be performed on the selected second block is initiated. Thereafter, the first and second block of the particular `super` block are erased so that erasure of the second block is performed without waiting for completion of the erasure of the first block. The status of the first and second nonvolatile memory devices is indicated as being busy during erasure of the first and second blocks, wherein the speed of erase operations in the digital system is substantially increased due to the blocks of the `super` block being arranged in-parallel and overlapping of the erase operations of the blocks within the `super` blocks thereby increasing the overall performance of the digital system.