公开(公告)号：US20180115836A1

公开(公告)日：2018-04-26

申请号：US15335420

申请日：2016-10-26

Applicant: Solid State System Co., Ltd.

Inventor： Tsung-Min Hsieh ,  Chien-Hsing Lee ,  Cheng-Wei Tsai

IPC: H04R19/04 ,  B81B3/00 ,  B81C1/00 ,  H04R31/00

CPC classification number: H04R19/04 ,  B81B3/001 ,  B81B2201/0257 ,  B81C1/00984 ,  H04R31/003 ,  H04R2201/003

Abstract: A Micro-Electro-Mechanical Systems (MEMS) device includes a substrate, a dielectric supporting layer, a diaphragm, a backplate. The substrate has a substrate opening corresponding to a diaphragm region. The dielectric supporting layer is disposed on the substrate, having a dielectric opening corresponding to the substrate opening to form the diaphragm region. The diaphragm within the dielectric opening is held by the dielectric supporting layer at a periphery. The backplate is disposed on the dielectric supporting layer, having a plurality of venting holes, connecting to the dielectric opening. The backplate includes a conductive layer and a passivation layer covering over the conductive layer at a first side opposite to the diaphragm, wherein a second side of the conductive layer is facing to the diaphragm and not covered by the passivation layer.

公开(公告)号：US09955268B2

公开(公告)日：2018-04-24

申请号：US14328727

申请日：2014-07-11

Applicant: Solid State System Co., Ltd.

Inventor： Tsung-Min Hsieh ,  Chien-Hsing Lee ,  Cheng-Wei Tsai ,  Jhyy-Cheng Liou

IPC: B81B7/00 ,  H04R23/00 ,  H04R19/00

CPC classification number: H04R19/005 ,  B81B7/0006 ,  B81B7/0058 ,  B81B2201/0257 ,  H04R23/006 ,  H04R2201/003 ,  H04R2460/11

Abstract: A micro-electrical-mechanical system (MEMS) microphone includes a MEMS structure, having a substrate, a diaphragm, and a backplate, wherein the substrate has a cavity and the backplate is between the cavity and the diaphragm. The backplate has multiple venting holes, which are connected to the cavity and allows the cavity to extend to the diaphragm. Further, an adhesive layer is disposed on the substrate, surrounding the cavity. A cover plate is adhered on the adhesive layer, wherein the cover plate has an acoustic hole, dislocated from the cavity without direct connection.

公开(公告)号：US20150147841A1

公开(公告)日：2015-05-28

申请号：US14092929

申请日：2013-11-28

Applicant: Solid State System Co., Ltd.

Inventor： Tsung-Min Hsieh ,  Chien-Hsing Lee ,  Jhyy-Cheng Liou

IPC: B81C1/00

CPC classification number: B81C1/00928 ,  B81C1/00476

Abstract: A method for releasing a diaphragm of a micro-electro-mechanical systems (MEMS) device at a stage of semi-finished product. The method includes pre-wetting the MEMS device in a pre-wetting solution to at least pre-wet a sidewall surface of a cavity of the MEMS device. Then, a wetting process after the step of pre-wetting the MEMS device is performed to etch a dielectric material of a dielectric layer for holding the diaphragm, wherein a sensing portion of the diaphragm is released from the dielectric layer.

Abstract translation: 一种在半成品阶段释放微电子机械系统（MEMS）装置的隔膜的方法。 该方法包括将预先润湿溶液中的MEMS器件预润湿至少预先润湿MEMS器件的空腔的侧壁表面。 然后，执行在预先润湿MEMS器件的步骤之后的润湿过程，以蚀刻用于保持隔膜的电介质层的电介质材料，其中隔膜的感测部分从电介质层释放。

公开(公告)号：US20150132880A1

公开(公告)日：2015-05-14

申请号：US14603371

申请日：2015-01-23

Applicant: Solid State System Co., Ltd.

Inventor： Tsung-Min Hsieh ,  Chien-Hsing Lee ,  Jhyy-Cheng Liou

IPC: B81C1/00

CPC classification number: B81C1/00158 ,  B81B3/00 ,  B81B3/0013 ,  B81B7/00 ,  B81B2201/0257 ,  B81C1/00 ,  B81C1/00952 ,  H04R19/005 ,  H04R2201/003

Abstract: A method for fabricating MEMS device includes providing a silicon substrate. A structural dielectric layer is formed over a first side of the silicon substrate. Structure elements are embedded in the structural dielectric layer. The structure elements include a conductive backplate disposed over the silicon substrate, having venting holes and protrusion structures on top of the conductive backplate; and diaphragm located above the conductive backplate by a distance. A chamber is formed between the diaphragm and the conductive backplate. A cavity is formed in the silicon substrate at a second side. The cavity corresponds to the structure elements. An isotropic etching is performed on a dielectric material of the structural dielectric layer to release the structure elements. A first side of the diaphragm is exposed by the chamber and faces to the protrusion structures of the conductive backplate. A second side of the diaphragm is exposed to an environment space.

Abstract translation: 制造MEMS器件的方法包括提供硅衬底。 在硅衬底的第一侧上形成结构介电层。 结构元件嵌入在结构介电层中。 结构元件包括设置在硅衬底上的导电背板，在导电背板的顶部上具有通气孔和突出结构; 和隔膜位于导电背板上方一段距离。 在隔膜和导电背板之间形成一个室。 在第二侧的硅衬底中形成腔体。 空腔对应于结构元件。 对结构介电层的电介质材料进行各向同性蚀刻以释放结构元件。 隔膜的第一侧被室暴露，并面向导电背板的突出结构。 隔膜的第二面暴露于环境空间。

公开(公告)号：US11498830B2

公开(公告)日：2022-11-15

申请号：US16812395

申请日：2020-03-09

Applicant: Solid State System Co., Ltd.

Inventor： Cheng-Wei Tsai ,  Tsung-Min Hsieh ,  Chien-Hsing Lee

IPC: H04R31/00 ,  H04R7/18 ,  B81B3/00 ,  B81C1/00

Abstract: The invention provides a MEMS microphone. The MEMS microphone includes a substrate, having a first opening. A dielectric layer is disposed on the substrate, wherein the dielectric layer has a second opening aligned to the first opening. A diaphragm is disposed within the second opening of the dielectric layer, wherein a peripheral region of the diaphragm is embedded into the dielectric layer at sidewall of the second opening. A backplate layer is disposed on the dielectric layer and covering over the second opening. The backplate layer includes a plurality of acoustic holes arranged into a regular array pattern. The regular array pattern comprises a pattern unit, the pattern unit comprises one of the acoustic holes as a center hole, and peripheral holes of the acoustic holes surrounding the center hole with a same pitch to the center hole.

公开(公告)号：US10798493B2

公开(公告)日：2020-10-06

申请号：US16223124

申请日：2018-12-18

Applicant: Solid State System Co., Ltd.

Inventor： Tsung-Min Hsieh ,  Chien-Hsing Lee ,  Cheng-Wei Tsai

IPC: H04N7/00 ,  H04R19/04 ,  B81B3/00 ,  B81C1/00 ,  H04R31/00

Abstract: A Micro-Electro-Mechanical Systems (MEMS) device includes a substrate, a dielectric supporting layer, a diaphragm, a backplate. The substrate has a substrate opening corresponding to a diaphragm region. The dielectric supporting layer is disposed on the substrate, having a dielectric opening corresponding to the substrate opening to form the diaphragm region. The diaphragm within the dielectric opening is held by the dielectric supporting layer at a periphery. The backplate is disposed on the dielectric supporting layer, having a plurality of venting holes, connecting to the dielectric opening. The backplate includes a conductive layer and a passivation layer covering over the conductive layer at a first side opposite to the diaphragm, wherein a second side of the conductive layer is facing to the diaphragm and not covered by the passivation layer.

公开(公告)号：US20150118780A1

公开(公告)日：2015-04-30

申请号：US14066712

申请日：2013-10-30

Applicant: Solid State System Co., Ltd.

Inventor： Cheng-Wei Tsai ,  Chien-Hsing Lee ,  Jhyy-Cheng Liou

IPC: H04R31/00

CPC classification number: H04R31/00 ,  H01L2224/48137 ,  H01L2924/16151 ,  H01L2924/16152 ,  H04R19/005 ,  H04R2201/003

Abstract: A method to protect an acoustic port of a microelectromechanical system (MEMS) microphone is provided. The method includes: providing the MEMS microphone; and forming a protection film, on the acoustic port of the MEMS microphone. The protection film has a porous region over the acoustic port to receive an acoustic signal but resist at least an intruding material. The protection film can at least endure a processing temperature of solder flow.

Abstract translation: 提供了保护微机电系统（MEMS）麦克风的声学端口的方法。 该方法包括：提供MEMS麦克风; 并在MEMS麦克风的声学端口上形成保护膜。 保护膜在声学端口上方具有多孔区域以接收声信号，但是至少阻挡入侵材料。 保护膜至少可以承受焊料流动的处理温度。

公开(公告)号：US08934649B1

公开(公告)日：2015-01-13

申请号：US14013049

申请日：2013-08-29

Applicant: Solid State System Co., Ltd.

Inventor： Chien-Hsing Lee ,  Tsung-Min Hsieh ,  Jhyy-Cheng Liou

IPC: H04R25/00 ,  H04R17/02 ,  H04R3/00

CPC classification number: H04R19/04 ,  H04R19/005 ,  H04R31/006

Abstract: A MEMS device includes substrate having a cavity. A dielectric layer is disposed on a second side of substrate at periphery of the cavity. A backplate structure is formed with the dielectric layer on a first side of the substrate and exposed by the cavity. The backplate structure includes at least a first backplate and a second backplate. The first backplate and the second backplate are electric disconnected and have venting holes to connect the cavity and the chamber. A diaphragm is disposed above the backplate structure by a distance, so as to form a chamber between the backplate structure and the diaphragm. A periphery of the diaphragm is embedded in the dielectric layer. The diaphragm serves as a common electrode. The first backplate and the second backplate respectively serve as a first electrode unit and a second electrode unit in conjugation with the diaphragm to form separate two capacitors.

Abstract translation: MEMS器件包括具有空腔的衬底。 电介质层设置在空腔周边的衬底的第二面上。 背板结构形成有介电层在基板的第一面上并被空腔暴露。 背板结构至少包括第一背板和第二背板。 第一个背板和第二个背板是电气断开的，并具有连接空腔和腔室的排气孔。 隔膜设置在背板结构上方一段距离，以便在背板结构和隔膜之间形成一个室。 隔膜的周边嵌入在电介质层中。 隔膜用作公共电极。 第一背板和第二背板分别用作与隔膜共轭的第一电极单元和第二电极单元，以形成分开的两个电容器。

公开(公告)号：US20140318213A1

公开(公告)日：2014-10-30

申请号：US13929810

申请日：2013-06-28

Applicant: Solid State System Co., Ltd.

Inventor： Li-Chi Tsao ,  Chien-Hsing Lee

IPC: G01N29/30

CPC classification number: G01N29/30 ,  G01N29/14 ,  G01N29/4436 ,  G01N2291/0231

Abstract: An acoustic micro-device testing apparatus including an acoustic device, at least one device under test (DUT), and a bearing plate is disclosed. The acoustic device provides a testing acoustic source to a first side of the DUT through the main channel and to a second side of the DUT through the side channel. The bearing plate has a first surface and a second surface. The first surface has a chamber sunken into the bearing plate. The second surface has a bearing space sunken into the bearing plate and bearing the DUT. The bearing plate has a main channel connecting the chamber and the DUT and at least one side channel connecting the chamber and the bearing space directly or through the main channel. A cover unit covers the bearing plate so that the bearing space and the chamber form a confined space. The DUT is in the confined space.

Abstract translation: 公开了一种包括声学装置，至少一个被测器件（DUT）和支承板的声学微器件测试装置。 声学装置通过主通道向DUT的第一侧提供测试声源，并通过侧通道向DUT的第二侧提供测试声源。 支承板具有第一表面和第二表面。 第一个表面有一个凹入承载板的腔室。 第二个表面有一个轴承空间沉入轴承板并承载DUT。 轴承板具有连接腔室和DUT的主通道以及直接或通过主通道连接腔室和轴承空间的至少一个侧通道。 盖单元覆盖轴承板，使得轴承空间和腔室形成密闭空间。 DUT位于密闭空间。

公开(公告)号：US20130260504A1

公开(公告)日：2013-10-03

申请号：US13906340

申请日：2013-05-31

Applicant: Solid State System Co., Ltd.

Inventor： Tsung-Min Hsieh ,  Chien-Hsing Lee ,  Jhyy-Cheng Liou

IPC: B81C1/00

CPC classification number: B81C1/00698 ,  B81C1/00682 ,  H01G5/18 ,  H04R19/005 ,  H04R19/04

Abstract: Method is to fabricate a MEMS device with a substrate. The substrate has through holes in the substrate within a diaphragm region and optionally an indent space from the second surface at the diaphragm region. A first dielectric structural layer is then disposed over the substrate from the first surface, wherein the first dielectric structural layer has a plurality of openings corresponding to the through holes, wherein each of the through holes remains exposed by the first dielectric structural layer. A second dielectric structural layer with a chamber is disposed over the first dielectric structural layer, wherein the chamber exposes the openings of the first dielectric structural layer and the through holes of the substrate to connect to the indent space. A MEMS diaphragm is embedded in the second dielectric structural layer above the chamber, wherein an air gap is formed between the substrate and the MEMS diaphragm.

Abstract translation: 方法是制造具有衬底的MEMS器件。 衬底在膜片区域内的衬底中具有通孔，并且可选地在隔膜区域处具有与第二表面相邻的凹陷空间。 然后，第一介电结构层从第一表面设置在衬底上，其中第一介电结构层具有对应于通孔的多个开口，其中每个通孔保持被第一介电结构层暴露。 具有腔室的第二电介质结构层设置在第一介电结构层上，其中腔室暴露第一介电结构层的开口和衬底的通孔以连接到凹陷空间。 MEMS隔膜嵌入在腔室上方的第二电介质结构层中，其中在衬底和MEMS隔膜之间形成气隙。