公开(公告)号：US08107281B2

公开(公告)日：2012-01-31

申请号：US12879544

申请日：2010-09-10

申请人： Tadashi Kai ,  Katsuya Nishiyama ,  Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine ,  Masahiko Nakayama ,  Naoharu Shimomura ,  Hiroaki Yoda ,  Kei Yakushiji ,  Shinji Yuasa ,  Hitoshi Kubota ,  Taro Nagahama ,  Akio Fukushima ,  Koji Ando

发明人： Tadashi Kai ,  Katsuya Nishiyama ,  Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine ,  Masahiko Nakayama ,  Naoharu Shimomura ,  Hiroaki Yoda ,  Kei Yakushiji ,  Shinji Yuasa ,  Hitoshi Kubota ,  Taro Nagahama ,  Akio Fukushima ,  Koji Ando

IPC分类号： G11C11/00

CPC分类号： H01L43/10 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/228 ,  Y10S977/935

摘要： According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.

公开(公告)号：US20100118600A1

公开(公告)日：2010-05-13

申请号：US12686168

申请日：2010-01-12

申请人： Toshihiko NAGASE ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Toshihiko NAGASE ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11C11/16 ,  H01L41/22 ,  G06F1/18

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08

摘要： A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0≦Ms

摘要翻译： 通过向磁性材料提供自旋极化电子来记录信息的磁阻元件包括由磁性材料制成并且具有沿与膜表面垂直的方向的第一磁化的第一固定层，制成的自由层 并且具有在垂直于膜表面的方向上的第二磁化强度，由自旋极化电子反转的第二磁化方向以及设置在第一被钉扎层和自由层之间的第一非磁性层 。 自由层的饱和磁化强度Ms满足关系0＆nlE; Ms <√{平方根超过（）} {Jw /（6＆pgr; At）}。 Jw是写入电流密度，t是自由层的厚度，A是常数。

公开(公告)号：US08665639B2

公开(公告)日：2014-03-04

申请号：US13407039

申请日：2012-02-28

申请人： Toshihiko Nagase ,  Tadashi Kai ,  Katsuya Nishiyama ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Masahiko Nakayama ,  Makoto Nagamine ,  Shigeto Fukatsu ,  Masatoshi Yoshikawa ,  Hiroaki Yoda

发明人： Toshihiko Nagase ,  Tadashi Kai ,  Katsuya Nishiyama ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Masahiko Nakayama ,  Makoto Nagamine ,  Shigeto Fukatsu ,  Masatoshi Yoshikawa ,  Hiroaki Yoda

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/123 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01L27/228 ,  H01L43/10

摘要： According to one embodiment, a magnetoresistive element includes a first magnetic layer with a perpendicular and variable magnetization, a second magnetic layer with a perpendicular and invariable magnetization, and a first nonmagnetic layer between the first and second magnetic layer. The first magnetic layer has a laminated structure of first and second ferromagnetic materials. A magnetization direction of the first magnetic layer is changed by a current which pass through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer. A perpendicular magnetic anisotropy of the second ferromagnetic material is smaller than that of the first ferromagnetic material. A film thickness of the first ferromagnetic material is thinner than that of the second ferromagnetic material.

摘要翻译： 根据一个实施例，磁阻元件包括具有垂直和可变磁化的第一磁性层，具有垂直和不变磁化的第二磁性层以及第一和第二磁性层之间的第一非磁性层。 第一磁性层具有第一和第二铁磁材料的叠层结构。 第一磁性层的磁化方向由穿过第一磁性层，第一非磁性层和第二磁性层的电流改变。 第二铁磁材料的垂直磁各向异性小于第一铁磁材料的垂直磁各向异性。 第一铁磁材料的膜厚比第二铁磁材料薄。

公开(公告)号：US08363462B2

公开(公告)日：2013-01-29

申请号：US13233906

申请日：2011-09-15

申请人： Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11C11/15

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08

摘要： A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0≦Ms

摘要翻译： 通过向磁性材料提供自旋极化电子来记录信息的磁阻元件包括由磁性材料制成并且具有沿与膜表面垂直的方向的第一磁化的第一固定层，制成的自由层 并且具有在垂直于膜表面的方向上的第二磁化强度，由自旋极化电子反转的第二磁化方向以及设置在第一被钉扎层和自由层之间的第一非磁性层 。 自由层的饱和磁化强度Ms满足关系0＆nlE; Ms <√{平方根超过（）} {Jw /（6＆pgr; At）}。 Jw是写入电流密度，t是自由层的厚度，A是常数。

公开(公告)号：US20120163070A1

公开(公告)日：2012-06-28

申请号：US13407039

申请日：2012-02-28

申请人： Toshihiko Nagase ,  Tadashi Kai ,  Katsuya Nishiyama ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Masahiko Nakayama ,  Makoto Nagamine ,  Shigeto Fukatsu ,  Masatoshi Yoshikawa ,  Hiroaki Yoda

发明人： Toshihiko Nagase ,  Tadashi Kai ,  Katsuya Nishiyama ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Masahiko Nakayama ,  Makoto Nagamine ,  Shigeto Fukatsu ,  Masatoshi Yoshikawa ,  Hiroaki Yoda

IPC分类号： G11C11/15 ,  H01L29/82

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/123 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01L27/228 ,  H01L43/10

摘要： According to one embodiment, a magnetoresistive element includes a first magnetic layer with a perpendicular and variable magnetization, a second magnetic layer with a perpendicular and invariable magnetization, and a first nonmagnetic layer between the first and second magnetic layer. The first magnetic layer has a laminated structure of first and second ferromagnetic materials. A magnetization direction of the first magnetic layer is changed by a current which pass through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer. A perpendicular magnetic anisotropy of the second ferromagnetic material is smaller than that of the first ferromagnetic material. A film thickness of the first ferromagnetic material is thinner than that of the second ferromagnetic material.

摘要翻译： 根据一个实施例，磁阻元件包括具有垂直和可变磁化的第一磁性层，具有垂直和不变磁化的第二磁性层以及第一和第二磁性层之间的第一非磁性层。 第一磁性层具有第一和第二铁磁材料的叠层结构。 第一磁性层的磁化方向由穿过第一磁性层，第一非磁性层和第二磁性层的电流改变。 第二铁磁材料的垂直磁各向异性小于第一铁磁材料的垂直磁各向异性。 第一铁磁材料的膜厚比第二铁磁材料薄。

公开(公告)号：US07663197B2

公开(公告)日：2010-02-16

申请号：US11534440

申请日：2006-09-22

申请人： Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： H01L43/08

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08

摘要： A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0≧Ms

摘要翻译： 通过向磁性材料提供自旋极化电子来记录信息的磁阻元件包括由磁性材料制成并且具有沿与膜表面垂直的方向的第一磁化的第一固定层，制成的自由层 并且具有在垂直于膜表面的方向上的第二磁化强度，由自旋极化电子反转的第二磁化方向以及设置在第一被钉扎层和自由层之间的第一非磁性层 。 自由层的饱和磁化强度Ms满足关系0> = Mst是自由层的厚度，A是常数。

公开(公告)号：US08036025B2

公开(公告)日：2011-10-11

申请号：US12686168

申请日：2010-01-12

申请人： Toshihiko Nagase ,  Masatoshi Yoshkawa ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Toshihiko Nagase ,  Masatoshi Yoshkawa ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： H01L43/00

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08

摘要： A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0≦Ms

摘要翻译： 通过向磁性材料提供自旋极化电子来记录信息的磁阻元件包括由磁性材料制成并且具有沿与膜表面垂直的方向的第一磁化的第一固定层，制成的自由层 并且具有在垂直于膜表面的方向上的第二磁化强度，由自旋极化电子反转的第二磁化方向以及设置在第一被钉扎层和自由层之间的第一非磁性层 。 自由层的饱和磁化强度Ms满足关系0＆nlE; Ms <√{平方根超过（）} {Jw /（6＆pgr; At）}。 Jw是写入电流密度，t是自由层的厚度，A是常数。

公开(公告)号：US08208292B2

公开(公告)日：2012-06-26

申请号：US13342324

申请日：2012-01-03

申请人： Tadashi Kai ,  Katsuya Nishiyama ,  Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine ,  Masahiko Nakayama ,  Naoharu Shimomura ,  Hiroaki Yoda ,  Kei Yakushiji ,  Shinji Yuasa ,  Hitoshi Kubota ,  Taro Nagahama ,  Akio Fukushima ,  Koji Ando

发明人： Tadashi Kai ,  Katsuya Nishiyama ,  Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine ,  Masahiko Nakayama ,  Naoharu Shimomura ,  Hiroaki Yoda ,  Kei Yakushiji ,  Shinji Yuasa ,  Hitoshi Kubota ,  Taro Nagahama ,  Akio Fukushima ,  Koji Ando

IPC分类号： G11C11/00

CPC分类号： H01L43/10 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/228 ,  Y10S977/935

摘要： According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.

摘要翻译： 根据一个实施例，磁阻元件包括具有可变磁化的第一磁性层和在垂直于膜表面的垂直方向上的易轴，具有不变磁化的第二磁性层和垂直方向上的易轴，以及 在第一和第二磁性层之间的第一非磁性层。 第一磁性层包括铁磁材料，其包括Co和Pd或Co和Pt交替层压在原子紧密堆积的平面上的合金。 第一磁性层具有指向垂直方向的C轴。 并且通过流过第一磁性层，第一非磁性层和第二磁性层的电流改变第一磁性层的磁化方向。

公开(公告)号：US20120008381A1

公开(公告)日：2012-01-12

申请号：US13233906

申请日：2011-09-15

申请人： Toshihiko NAGASE ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Toshihiko NAGASE ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11C11/15 ,  G06K19/077 ,  H01L29/82

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08

摘要： A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0≦Ms

摘要翻译： 通过向磁性材料提供自旋极化电子来记录信息的磁阻元件包括由磁性材料制成并且具有沿与膜表面垂直的方向的第一磁化的第一固定层，制成的自由层 并且具有在垂直于膜表面的方向上的第二磁化强度，由自旋极化电子反转的第二磁化方向以及设置在第一被钉扎层和自由层之间的第一非磁性层 。 自由层的饱和磁化强度Ms满足关系0＆nlE; Ms <√{平方根超过（）} {Jw /（6＆pgr; At）}。 Jw是写入电流密度，t是自由层的厚度，A是常数。

公开(公告)号：US20110073970A1

公开(公告)日：2011-03-31

申请号：US12879544

申请日：2010-09-10

申请人： Tadashi Kai ,  Katsuya Nishiyama ,  Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine ,  Masahiko Nakayama ,  Naoharu Shimomura ,  Hiroaki Yoda ,  Kei Yakushiji ,  Shinji Yuasa ,  Hitoshi Kubota ,  Taro Nagahama ,  Akio Fukushima ,  Koji Ando

发明人： Tadashi Kai ,  Katsuya Nishiyama ,  Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine ,  Masahiko Nakayama ,  Naoharu Shimomura ,  Hiroaki Yoda ,  Kei Yakushiji ,  Shinji Yuasa ,  Hitoshi Kubota ,  Taro Nagahama ,  Akio Fukushima ,  Koji Ando

IPC分类号： H01L29/82

CPC分类号： H01L43/10 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/228 ,  Y10S977/935

摘要： According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.

摘要翻译： 根据一个实施例，磁阻元件包括具有可变磁化的第一磁性层和在垂直于膜表面的垂直方向上的易轴，具有不变磁化的第二磁性层和垂直方向上的易轴，以及 在第一和第二磁性层之间的第一非磁性层。 第一磁性层包括铁磁材料，其包括Co和Pd或Co和Pt交替层压在原子紧密堆积的平面上的合金。 第一磁性层具有指向垂直方向的C轴。 并且通过流过第一磁性层，第一非磁性层和第二磁性层的电流改变第一磁性层的磁化方向。