公开(公告)号：US20230305396A1

公开(公告)日：2023-09-28

申请号：US18321310

申请日：2023-05-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Chen-Yu Liu ,  Ching-Yu Chang

IPC: G03F7/004 ,  G03F7/16 ,  H01L21/027 ,  G03F7/32 ,  G03F7/20

CPC classification number: G03F7/0046 ,  G03F7/16 ,  G03F7/2004 ,  G03F7/32 ,  H01L21/0274

Abstract: A photoresist includes a core group that contains metal, and one or more first ligands or one or more second ligands attached to the core group. The first ligands each have a following structure:





The second ligands each have a following structure:










represents the core group. L′ represents a chemical that includes 0~2 carbon atoms saturated by Hydrogen (H) or Fluorine (F). L represents a chemical that includes 1~6 carbon atoms saturated by H or F. L″ represents a chemical that includes 1~6 carbon atoms saturated by H. L‴ represents a chemical that includes 1~6 carbon atoms saturated by H or F. Linker represents a chemical that links L″ and L‴ together.

公开(公告)号：US11378884B2

公开(公告)日：2022-07-05

申请号：US16725884

申请日：2019-12-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Yu Liu ,  Ya-Ching Chang ,  Cheng-Han Wu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/38 ,  G03F7/30 ,  G03F7/039 ,  G03F7/32 ,  G03F7/20

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate. The photoresist layer includes at least an acid labile group (ALG) and a thermo-base generator (TBG). The method further includes exposing a portion of the photoresist layer to a radiation and performing a baking process after the exposing of the portion of the photoresist layer. The TBG releases a base during the performing of the baking process, resulting in a chemical reaction between the ALG and the base. The method further includes removing an unexposed portion of the photoresist layer, resulting in a patterned photoresist layer.

公开(公告)号：US10649339B2

公开(公告)日：2020-05-12

申请号：US15482315

申请日：2017-04-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ya-Ching Chang ,  Chen-Yu Liu ,  Cheng-Han Wu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/20 ,  G03F7/039 ,  G03F7/32 ,  G03F7/16 ,  G03F7/38

Abstract: A resist material and methods for forming a semiconductor structure including using the resist material are provided. The method for forming a semiconductor structure includes forming a resist layer over a substrate and exposing a portion of the resist layer to form an exposed portion of the resist layer by performing an exposure process. The method for forming a semiconductor structure further includes developing the resist layer in a developer. In addition, the resist layer is made of a resist material including a photosensitive polymer and a contrast promoter, and a protected functional group of the photosensitive polymer is deprotected to form a deprotected functional group during the exposure process, and a functional group of the contrast promoter bonds to the deprotected functional group of the photosensitive polymer.

公开(公告)号：US10520821B2

公开(公告)日：2019-12-31

申请号：US15697226

申请日：2017-09-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Yu Liu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/38 ,  G03F7/09 ,  G03F7/16 ,  G03F7/20 ,  H01L21/02 ,  H01L21/027 ,  H01L21/67

Abstract: The present disclosure provides a method for lithography patterning. The method includes coating a bottom layer on a substrate, wherein the bottom layer includes a carbon-rich material; forming a middle layer on the bottom layer, wherein the middle layer has a composition such that its silicon concentration is enhanced to be greater than 42% in weight; coating a photosensitive layer on the middle layer; performing an exposing process to the photosensitive layer; and developing the photosensitive layer to form a patterned photosensitive layer.

公开(公告)号：US10520820B2

公开(公告)日：2019-12-31

申请号：US15694222

申请日：2017-09-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Yu Liu ,  Wei-Han Lai ,  Tzu-Yang Lin ,  Ming-Hui Weng ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/32 ,  G03F7/16 ,  G03F7/20

Abstract: The present disclosure provides NTD developers and corresponding lithography techniques that can overcome resolution, line edge roughness (LER), and sensitivity (RLS) tradeoff barriers particular to extreme ultraviolet (EUV) technologies, thereby achieving high patterning fidelity for advanced technology nodes. An exemplary lithography method includes forming a negative tone resist layer over a workpiece; exposing the negative tone resist layer to EUV radiation; and removing an unexposed portion of the negative tone resist layer in a negative tone developer, thereby forming a patterned negative tone resist layer. The negative tone developer includes an organic solvent having a log P value greater than 1.82. The organic solvent is an ester acetate derivative represented by R1COOR2. R1 and R2 are hydrocarbon chains having four or less carbon atoms. In some implementations, R1, R2, or both R1 and R2 are propyl functional groups, such as n-propyl, isopropyl, or 2-methylpropyl.

公开(公告)号：US20190384177A1

公开(公告)日：2019-12-19

申请号：US16549461

申请日：2019-08-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Siao-Shan Wang ,  Chen-Yu Liu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/09 ,  G03F7/095 ,  H01L21/027 ,  G03F7/42 ,  G03F7/38 ,  G03F7/32 ,  G03F7/20 ,  G03F7/16 ,  G03F7/039 ,  G03F7/038

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a material layer on a substrate; forming a blocking layer on the material layer, wherein a bottom portion of the blocking layer reacts with the material layer, resulting in a capping layer that seals the material layer from an upper portion of the blocking layer. The method further includes forming a photoresist layer on the blocking layer; exposing the photoresist layer; and developing the photoresist layer, resulting in a patterned photoresist layer.

公开(公告)号：US10394123B2

公开(公告)日：2019-08-27

申请号：US15597309

申请日：2017-05-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Siao-Shan Wang ,  Chen-Yu Liu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/09 ,  H01L21/027 ,  G03F7/42 ,  G03F7/039 ,  G03F7/038 ,  G03F7/16 ,  G03F7/095 ,  G03F7/38 ,  G03F7/20 ,  G03F7/32

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a material layer over a substrate, wherein the material layer is soluble in a solvent; forming a blocking layer on the material layer; and forming a photoresist layer on the blocking layer, wherein the photoresist layer includes a photosensitive material dissolved in the solvent. The method further includes exposing the photoresist layer; and developing the photoresist layer in a developer.

公开(公告)号：US20180277359A1

公开(公告)日：2018-09-27

申请号：US15468109

申请日：2017-03-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Yu Liu ,  Chin-Hsiang Lin ,  Ching-Yu Chang ,  Ming-Hui Weng

IPC: H01L21/027 ,  H01L21/311 ,  C09D201/06 ,  G03F7/11 ,  G03F7/16 ,  G03F7/09

Abstract: Under layer composition and methods of manufacturing semiconductor devices are disclosed. The method of manufacturing semiconductor device includes the following steps. A layer of an under layer composition is formed, wherein the under layer composition includes a polymeric material and a cross-linker, and the cross-linker includes at least one decomposable functional group. A curing process is performed on the layer of the under layer composition to form an under layer, wherein the cross-linker is crosslinked with the polymeric material to form a crosslinked polymeric material having the at least one decomposable functional group. A patterned photoresist layer is formed over the under layer. An etching process is performed to transfer a pattern of the patterned photoresist layer to the under layer. The under layer is removed by decomposing the decomposable functional group.

公开(公告)号：US12210283B2

公开(公告)日：2025-01-28

申请号：US18321310

申请日：2023-05-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Chen-Yu Liu ,  Ching-Yu Chang

IPC: G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  H01L21/027

Abstract: A photoresist includes a core group that contains metal, and one or more first ligands or one or more second ligands attached to the core group. The first ligands each have a following structure: The second ligands each have a following structure: {circle around (M)} represents the core group. L′ represents a chemical that includes 0-2 carbon atoms saturated by Hydrogen (H) or Fluorine (F). L represents a chemical that includes 1-6 carbon atoms saturated by H or F. L″ represents a chemical that includes 1-6 carbon atoms saturated by H. L″′ represents a chemical that includes 1-6 carbon atoms saturated by H or F. Linker represents a chemical that links L″ and L″′ together.

公开(公告)号：US11694896B2

公开(公告)日：2023-07-04

申请号：US17019094

申请日：2020-09-11

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ming-Hui Weng ,  An-Ren Zi ,  Ching-Yu Chang ,  Chen-Yu Liu

IPC: H01L21/027 ,  G03F7/00 ,  G03F7/11

CPC classification number: H01L21/0271 ,  G03F7/0025 ,  G03F7/11

Abstract: A method of forming a pattern in a photoresist includes forming a photoresist layer over a substrate, and selectively exposing the photoresist layer to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer composition to the selectively exposed photoresist layer to form a pattern. The developer composition includes a first solvent having Hansen solubility parameters of 15 pKa>9.5; and a second solvent having a dielectric constant greater than 18. The first solvent and the second solvent are different solvents.