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    Liquid delivery and vaporization apparatus and method
    21.
    发明授权
    Liquid delivery and vaporization apparatus and method 有权

    公开(公告)号：US11162174B2

    公开(公告)日：2021-11-02

    申请号：US16136870

    申请日：2018-09-20

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Hsin-Lung Yang ,  Chui-Ya Peng ,  Chih-Ta Kuan

    IPC: H01L21/67 ,  C23C16/455 ,  C23C16/52 ,  C23C16/46 ,  C23C16/448

    Abstract: The present disclosure relates to an apparatus and a method of delivering a liquid to a downstream process. The apparatus can include a vessel configured to retain a liquid, a bellow in fluid communication with the vessel to receive the liquid from the vessel and in fluid communication with the downstream process to deliver the liquid. The bellow can be exposed to a constant external pressure and configured to deliver the liquid under the constant external pressure when the bellow stops receiving the liquid from the vessel. In some embodiments, the constant external pressure is atmospheric pressure. The bellow can include a pressure deformable material. The apparatus can further include a vaporizer configured to receive the liquid and to produce a vapor, one or more chemical vapor deposition chambers configured to receive the vapor and to hold a substrate for deposition of a component of the vapor on a substrate.

    Semiconductor device
    22.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10818790B2

    公开(公告)日：2020-10-27

    申请号：US16435070

    申请日：2019-06-07

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Chih-Fen Chen ,  Chui-Ya Peng ,  Ching Yu ,  Pin-Hen Lin ,  Yen Chuang ,  Yuh-Ta Fan

    IPC: H01L29/78 ,  H01L29/08 ,  H01L29/66 ,  H01L29/165

    Abstract: A semiconductor device includes a gate stack over a semiconductor substrate. A spacer extends substantially along a first sidewall of the gate stack. An epitaxy structure is in the semiconductor substrate. A liner wraps around the epitaxy structure and has an outer surface in contact with the semiconductor substrate and an inner surface facing the epitaxy structure. The outer surface of the liner has a first facet extending upwards and towards the gate stack from a bottom of the first liner and a second facet extending upwards and towards an outer sidewall of the spacer from a top of the first facet to a top of the liner, such that a corner is formed between the first facet and the second facet, and the inner surface of the first liner defines a first curved corner pointing towards the corner formed between the first facet and the second facet.

    Semiconductor structures with shallow trench isolations
    24.
    发明授权
    Semiconductor structures with shallow trench isolations 有权
    具有浅沟槽隔离的半导体结构

    公开(公告)号：US09324603B2

    公开(公告)日：2016-04-26

    申请号：US13967558

    申请日：2013-08-15

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Shin-Yeu Tsai ,  Chia-Hui Lin ,  Ching-Yu Chen ,  Chui-Ya Peng

    IPC: H01L21/762

    CPC classification number: H01L21/76224 ,  H01L21/76229

    Abstract: A method is disclosed that includes the operations outlined below. An insulating material is disposed within a plurality of trenches on a semiconductor substrate and over the semiconductor substrate. The first layer is formed over the insulating material. The first layer and the insulating material are removed.

    Abstract translation: 公开了一种包括以下概述的操作的方法。 绝缘材料设置在半导体衬底上并在半导体衬底之上的多个沟槽内。 第一层形成在绝缘材料上。 去除第一层和绝缘材料。

    Automated wafer cleaning
    26.
    发明授权
    Automated wafer cleaning 有权

    公开(公告)号：US11735440B2

    公开(公告)日：2023-08-22

    申请号：US17736933

    申请日：2022-05-04

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chun-Yu Lee ,  Sen-Yeo Peng ,  Chui-Ya Peng

    IPC: H01L21/67 ,  H01L21/687 ,  B08B3/04 ,  H01L21/02 ,  B08B5/00

    CPC classification number: H01L21/67051 ,  B08B3/041 ,  B08B5/00 ,  H01L21/02057 ,  H01L21/68764 ,  H01L21/02087

    Abstract: In an embodiment, a method includes: spinning a wafer around an axis of rotation at a center of the wafer; applying a first stream of liquid along a line starting from an initial point on the wafer adjacent to the center of the wafer, through the center of the wafer, and ending at an edge of the wafer; applying a second stream of liquid to an inner third of the line starting at the initial point and ending at a boundary point; applying a third stream of liquid to a middle third of the line starting at the boundary point; applying a fourth stream of liquid to an outer third of the line ending at the edge of the wafer; applying a fifth stream of liquid along the line starting from the initial point and ending at the edge of the wafer; and applying a stream of gas along the line starting from the initial point and ending at the edge of the wafer.

    System and method for operating the same
    27.
    发明授权
    System and method for operating the same 有权

    公开(公告)号：US11721567B2

    公开(公告)日：2023-08-08

    申请号：US17576994

    申请日：2022-01-16

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Jia-Rong Xiao ,  Wei-Hsiang Huang ,  Sen-Yeo Peng ,  Chui-Ya Peng

    IPC: H01L21/67

    CPC classification number: H01L21/67253 ,  H01L21/67057

    Abstract: A system includes a cleaning device and a concentration measuring device. The cleaning device includes a first pipe and a first pump. The first pump is configured to move first liquid in the first pipe. Two terminals of the first pump are respectively coupled to the first pipe. The concentration measuring device includes a tube, a cooler, a concentration meter and a second pump. The tube is coupled to the first pipe, and is configured to retrieve the first liquid. The cooler covers the tube to cool the first liquid. The concentration meter is configured to measure a concentration of the first liquid cooled by the cooler. The second pump is coupled to the tube, and is configured to move the first liquid according to the concentration.

    SYSTEMS AND METHODS FOR SHUTTERED WAFER CLEANING
    28.
    发明申请
    SYSTEMS AND METHODS FOR SHUTTERED WAFER CLEANING 有权

    公开(公告)号：US20220262651A1

    公开(公告)日：2022-08-18

    申请号：US17737765

    申请日：2022-05-05

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Tsui-Wei Wang ,  Yung-Li Tsai ,  Chui-Ya Peng

    IPC: H01L21/67 ,  B08B15/04 ,  H01L21/02

    Abstract: In an embodiment, a system includes: a wafer support configured to secure a wafer; a nozzle configured to dispense a liquid or a gas on the wafer when the nozzle is in an active state of dispensing; a shutter configured to catch the liquid from the nozzle when the shutter is in a first position below the nozzle; and a shutter actuator configured to: move the shutter to the first position in response to the nozzle not being in an inactive state; move the shutter to a second position away from the first position in response to the nozzle being in the active state.

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