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公开(公告)号：US11852965B2
公开(公告)日：2023-12-26
申请号：US17331517
申请日：2021-05-26
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Pei-Cheng Hsu , Ta-Cheng Lien , Hsin-Chang Lee
IPC: G03F1/24
CPC classification number: G03F1/24
Abstract: An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a patterned absorber layer on the reflective multilayer stack is provided. The patterned absorber layer includes an alloy comprising tantalum and at least one alloying element. The at least one alloying element includes at least one transition metal element or at least one Group 14 element.
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公开(公告)号：US11619875B2
公开(公告)日：2023-04-04
申请号：US17090825
申请日：2020-11-05
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Hsin-Chang Lee , Chia-Jen Chen , Pei-Cheng Hsu , Ta-Cheng Lien
Abstract: In a method of manufacturing a reflective mask, a photo resist layer is formed over a mask blank. The mask blank includes a substrate, a reflective multilayer on the substrate, a capping layer on the reflective multilayer, an absorber layer on the capping layer and a hard mask layer, and the absorber layer is made of Cr, CrO or CrON. The photo resist layer is patterned, the hard mask layer is patterned by using the patterned photo resist layer, the absorber layer is patterned by using the patterned hard mask layer, and an additional element is introduced into the patterned absorber layer to form a converted absorber layer.
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公开(公告)号：US11561464B2
公开(公告)日：2023-01-24
申请号：US17532939
申请日：2021-11-22
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Pei-Cheng Hsu , Ta-Cheng Lien , Hsin-Chang Lee
Abstract: An extreme ultra-violet mask includes a substrate, a multi-layered mirror layer, a capping layer, a first tantalum-containing oxide layer, a tantalum-containing nitride layer, and a second tantalum-containing oxide layer. The multi-layered mirror layer is over the substrate. The capping layer is over the multi-layered mirror layer. The first tantalum-containing oxide layer is over the capping layer. The tantalum-containing nitride layer is over the first tantalum-containing oxide layer. The second tantalum-containing oxide layer is over the tantalum-containing nitride layer.
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公开(公告)号：US11204545B2
公开(公告)日：2021-12-21
申请号：US16744732
申请日：2020-01-16
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Pei-Cheng Hsu , Ching-Huang Chen , Hung-Yi Tsai , Ming-Wei Chen , Ta-Cheng Lien , Hsin-Chang Lee
IPC: G03F1/24
Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes one or more alternating pairs of a first Cr based layer and a second Cr based layer different from the first Cr based layer.
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公开(公告)号：US20210373431A1
公开(公告)日：2021-12-02
申请号：US17109833
申请日：2020-12-02
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Pei-Cheng Hsu , Ta-Cheng Lien , Hsin-Chang Lee
IPC: G03F1/24
Abstract: A reflective mask includes a substrate, a reflective multilayer disposed over the substrate, a capping layer disposed over the reflective multilayer, an intermediate layer disposed over the capping layer, an absorber layer disposed over the intermediate layer, and a cover layer disposed over the absorber layer. The intermediate layer includes a material having a lower hydrogen diffusivity than a material of the capping layer.
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Patent Agency Ranking
公开(公告)号：US20190324364A1
公开(公告)日：2019-10-24
申请号：US15956189
申请日：2018-04-18
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Pei-Cheng Hsu , Yih-Chen Su , Chi-Kuang Tsai , Ta-Cheng Lien , Tzu Yi Wang , Jong-Yuh Chang , Hsin-Chang Lee
Abstract: A method comprises receiving a workpiece that includes a substrate having a low temperature expansion material, a reflective multilayer over the substrate, a capping layer over the reflective multilayer, and an absorber layer over the capping layer. The method further comprises patterning the absorber layer to provide first trenches corresponding to circuit patterns on a wafer, and patterning the absorber layer, the capping layer, and the reflective multilayer to provide second trenches corresponding to a die boundary area on the wafer, thereby providing an extreme ultraviolet lithography (EUVL) mask. The method further comprises treating the EUVL mask with a treatment chemical that prevents exposed surfaces of the absorber layer from oxidation.
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公开(公告)号：US09341940B2
公开(公告)日：2016-05-17
申请号：US14278678
申请日：2014-05-15
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Wen-Chang Hsueh , Chia-Jen Chen , Ta-Cheng Lien , Hsin-Chang Lee
IPC: G03F1/32
Abstract: A reticle and a method of fabricating the reticle are provided. In various embodiments, the reticle includes a substrate, a patterned first attenuating layer, a patterned second attenuating layer, and a patterned third attenuating layer. The patterned first attenuating layer is disposed on the substrate. The patterned second attenuating layer is disposed on the patterned first attenuating layer. The patterned third attenuating layer is disposed on the patterned second attenuating layer. A first part of the patterned first attenuating layer, a first part of patterned second attenuating layer, and the patterned third attenuating layer are stacked on the substrate as a binary intensity mask portion.
Abstract translation: 提供了掩模版和制作掩模版的方法。 在各种实施例中，掩模版包括衬底，图案化的第一衰减层，图案化的第二衰减层和图案化的第三衰减层。 图案化的第一衰减层设置在基板上。 图案化的第二衰减层设置在图案化的第一衰减层上。 图案化的第三衰减层设置在图案化的第二衰减层上。 图案化第一衰减层的第一部分，图案化第二衰减层的第一部分和图案化的第三衰减层作为二值强度掩模部分堆叠在基板上。
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公开(公告)号：US12181797B2
公开(公告)日：2024-12-31
申请号：US17483302
申请日：2021-09-23
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Pei-Cheng Hsu , Ping-Hsun Lin , Ta-Cheng Lien , Hsin-Chang Lee
IPC: G03F7/004 , H01L21/033
Abstract: An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a multi-layer patterned absorber layer on the reflective multilayer stack is provided. Disclosed embodiments include an absorber layer that includes an alloy comprising ruthenium (Ru), chromium (Cr), platinum (Pt), gold (Au), iridium (Ir), titanium (Ti), niobium (Nb), rhodium (Rh), molybdenum (Mo), tungsten (W) or palladium (Pd), and at least one alloying element. The at least one alloying element includes ruthenium (Ru), chromium (Cr), tantalum (Ta), platinum (Pt), gold (Au), iridium (Ir), titanium (Ti), niobium (Nb), rhodium (Rh), molybdenum (Mo), hafnium (Hf), boron (B), nitrogen (N), silicon (Si), zirconium (Zr) or vanadium (V). Other embodiments include a multi-layer patterned absorber structure with layers that include an alloy and an alloying element, where at least two of the layers of the multi-layer structure have different compositions.
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公开(公告)号：US12153339B2
公开(公告)日：2024-11-26
申请号：US17390603
申请日：2021-07-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Pei-Cheng Hsu , Ta-Cheng Lien , Hsin-Chang Lee
Abstract: A pellicle for protecting a photomask from contaminant particles is provided. The pellicle includes a pellicle membrane containing at least one porous film. The at least one porous film includes a network of a plurality of nanotubes. At least one nanotube of the plurality of nanotubes includes a core nanotube and a shell nanotube surrounding the core nanotube. The core nanotube includes a material different from the shell nanotube. The pellicle further includes a pellicle border attached to the pellicle membrane along a peripheral region of the pellicle membrane and a pellicle frame attached to the pellicle border.
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公开(公告)号：US11829062B2
公开(公告)日：2023-11-28
申请号：US17065712
申请日：2020-10-08
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Pei-Cheng Hsu , Ta-Cheng Lien , Hsin-Chang Lee
IPC: G03F1/24 , H01L21/033 , H01L21/027 , G03F1/54
CPC classification number: G03F1/24 , G03F1/54 , H01L21/0274 , H01L21/0332
Abstract: In a method of manufacturing a reflective mask, a photo resist layer is formed over a mask blank. The mask blank includes a substrate, a reflective multilayer on the substrate, a capping layer on the reflective multilayer, an absorber layer on the capping layer and a hard mask layer, and the absorber layer is made of Cr, CrO or CrON. The photo resist layer is patterned, the hard mask layer is patterned by using the patterned photo resist layer, the absorber layer is patterned by using the patterned hard mask layer, and an additional element is introduced into the patterned absorber layer to form a converted absorber layer.
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