公开(公告)号：US20140206123A1

公开(公告)日：2014-07-24

申请号：US13749033

申请日：2013-01-24

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chia-Hua Chu ,  Te-Hao Lee ,  Jiou-Kang Lee ,  Kai-Chih Liang ,  Chung-Hsien Lin ,  Chun-wen Cheng

IPC: B81C1/00

CPC classification number: B81C1/00269 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2203/0307 ,  B81B2207/012 ,  B81C1/00039 ,  B81C1/00261 ,  B81C2203/035

Abstract: Exemplary microelectromechanical system (MEMS) devices, and methods for fabricating such are disclosed. An exemplary method includes providing a silicon-on-insulator (SOI) substrate, wherein the SOI substrate includes a first silicon layer separated from a second silicon layer by an insulator layer; processing the first silicon layer to form a first structure layer of a MEMS device; bonding the first structure layer to a substrate; and processing the second silicon layer to form a second structure layer of the MEMS device.

Abstract translation: 公开了示例性微机电系统（MEMS）装置及其制造方法。 一种示例性方法包括提供绝缘体上硅（SOI）衬底，其中SOI衬底包括通过绝缘体层与第二硅层分离的第一硅层; 处理所述第一硅层以形成MEMS器件的第一结构层; 将第一结构层接合到基板上; 以及处理所述第二硅层以形成所述MEMS器件的第二结构层。

公开(公告)号：US20130200438A1

公开(公告)日：2013-08-08

申请号：US13831106

申请日：2013-03-14

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yi-Shao Liu ,  Rashid Bashir ,  Fei-Lung Lai ,  Chun-wen Cheng

IPC: G01N27/414 ,  H01L29/66

CPC classification number: G01N27/4145 ,  G01N27/414 ,  G01N27/4148 ,  H01L29/66477 ,  H01L29/66484 ,  H01L29/7831 ,  H01L29/78648 ,  H01L51/0093

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity. An amplification factor of the BioFET device may be provided by a difference in capacitances associated with the gate structure on the first surface and with the interface layer formed on the second surface.

Abstract translation: 本公开提供了生物场效应晶体管（BioFET）和制造BioFET器件的方法。 该方法包括使用与互补金属氧化物半导体（CMOS）工艺兼容或典型的一个或多个工艺步骤形成BioFET。 BioFET器件可以包括衬底; 设置在基板的第一表面上的栅极结构和形成在基板的第二表面上的界面层。 界面层可以允许将受体置于界面层上以检测生物分子或生物实体的存在。 可以通过与第一表面上的栅极结构和形成在第二表面上的界面层相关的电容的差异来提供BioFET器件的放大系数。