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公开(公告)号：US20090269493A1
公开(公告)日：2009-10-29
申请号：US12418165
申请日：2009-04-03
IPC分类号： C23C16/24
CPC分类号： C01B33/03 , C01B33/035
摘要： The present invention utilizes a silicon member (single-crystalline silicon rod), which is cut out from a single-crystalline silicon ingot which is grown by a CZ method or FZ method, as the core wire when manufacturing a silicon rod. Specifically, a planar silicon is cut out from a body portion which is obtained by cutting off a shoulder portion and a tail portion from a single-crystalline silicon ingot and is further cut into thin rectangles to obtain a silicon bar. In the case that the crystal growth axis orientation is , there are four crystal habit lines, and the silicon bar is cut out such that the surface forms an off-angle θ in a predetermined range with the crystal habit line. The provided polycrystalline silicon rod has a low impurity contamination and high single-crystallization efficiency.
摘要翻译： 本发明使用在制造硅棒时，通过CZ法或FZ法生长的单晶硅锭切出的硅构件（单晶硅棒）作为芯线。 具体地说，从通过从单晶硅锭切断肩部和尾部获得的主体部分切出平面硅，并进一步切割成细长矩形以获得硅棒。 在晶体生长轴取向为<100>的情况下，存在四条晶体习性线，切割出硅棒，使得该表面与晶体习性线形成预定范围的偏角θ。 所提供的多晶硅棒具有低杂质污染和高单结晶效率。
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公开(公告)号：US6071349A
公开(公告)日：2000-06-06
申请号：US893540
申请日：1997-07-11
申请人： Yasushi Kurosawa , Kyoji Oguro , Yutaka Ota , Yuji Okubo
发明人： Yasushi Kurosawa , Kyoji Oguro , Yutaka Ota , Yuji Okubo
IPC分类号： B01J4/00 , C23C16/44 , C23C16/455 , C30B25/14 , C30B29/06 , H01L21/205 , C23C16/00
CPC分类号： C23C16/45561 , C23C16/455 , C30B25/14
摘要： A vapor-phase growth plant which has a dopant gas supplying apparatus comprising a plurality of dopant gas supplying containers, and a multiple stage gas flow subsystem with a plurality of dopant gas supply conduits therein, of which said dopant gas supply conduits form a tournament-style network with a plurality of confluences on which the dopant gas supply conduits are united and the gas flows therein are merged for subjection to even mixing which results in gradual decreasing of the number of the dopant gas supply conduits as the dopant gas flows proceed in the multiple stage gas flow subsystem. Together with the equipped pressure reducing valves, the dopant gas which is highly evened in its pressure and its concentration can be supplied to the vapor-phase growth apparatus, thereby affording stable production of vapor-phase growth products with extremely lessened quality variance. The dopant gas supplying apparatus described compiles the gas supply conduits within it to two groups, each of which can be used alternatively by switching of these. Therefore, the apparatus can supply dopant gas continuously and for a longer period. Also the operation of the dopant gas supplying apparatus can be simplified.
摘要翻译： 一种气相生长装置，其具有包括多个掺杂剂气体供应容器的掺杂剂气体供给装置和其中具有多个掺杂剂气体供应导管的多级气体流动子系统，其中所述掺杂剂气体供应管道形成比赛 - 掺杂气体供应管道合并在一起的多个汇合的风格网络被合并并且气体流入其中的气体网络被合并以便均匀混合，这导致随着掺杂剂气体流动的进行，掺杂剂气体供应管道的数量逐渐减少 多级气流子系统。 与配备的减压阀一起，可以将其压力高度均匀的掺杂气体及其浓度提供给气相生长装置，从而提供稳定的气相生长产物的生产，并且质量差异极小。 上述的掺杂剂气体供给装置将其内部的气体供给管路汇合成两组，每组可以交替使用它们。 因此，该装置可以连续供给较长时间的掺杂气体。 另外，也可以简化掺杂剂气体供给装置的动作。
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23.发明授权
公开(公告)号：US5310531A
公开(公告)日：1994-05-10
申请号：US983784
申请日：1992-11-30
申请人： Yasuhiro Ikeda , Kyoji Oguro
发明人： Yasuhiro Ikeda , Kyoji Oguro
摘要： A polycrystalline silicon rod for preparing a monocrystalline silicon rod by a floating zone method, wherein at least a central portion of the section of the polycrystalline silicon rod has coarsened silicon monocrystalline grains around the center over an area of or above the minimum section of a molten zone during progress in the floating zone method and the outer peripheral portion of the coarsened region has fine monocrystalline grains. From the polycrystalline silicon rod, the monocrystalline silicon rod for a semiconductor is prepared with a high yield by the single floating zone method.
摘要翻译： 一种用于通过浮动区域方法制备单晶硅棒的多晶硅棒，其中所述多晶硅棒的所述部分的至少中心部分在所述中心部分周围的熔融状态的所述最小部分的区域上方粗化了所述硅单晶晶粒 在浮选方法的进行中，粗化区的外周部具有微细的单晶粒。 由多晶硅棒制成半导体用单晶硅棒，通过单浮动法制备高产率。
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