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21.发明授权
公开(公告)号：US5624776A
公开(公告)日：1997-04-29
申请号：US196111
申请日：1994-02-18
CPC分类号： G03G5/08278 , G03G5/08214
摘要： An electrophotographic photosensitive member comprising a substrate and a light receiving layer composed of a silicon-containing non-single crystal material disposed on said substrate, characterized in that said light receiving layer contains a plurality of columnar structure regions each grown from a nucleus situated in said light receiving layer wherein said plurality of columnar structure regions are arranged substantially in parallel to the thicknesswise direction of said light receiving layer and at a density in the range of 5/cm.sup.2 to 500/cm.sup.2.
摘要翻译： PCT No.PCT / JP93 / 00824 Sec。 371日期1994年2月18日 102（e）1994年2月18日PCT 1993年6月18日PCT公布。 公开号WO93 / 25940 日期：1993年12月23日一种电子照相感光构件，其包括基板和设置在所述基板上的含硅非单晶材料构成的受光层，其特征在于，所述光接收层包含多个柱状结构区域， 位于所述光接收层中的核，其中所述多个柱状结构区域基本上平行于所述光接收层的厚度方向布置，并且在5 / cm 2至500 / cm 2的范围内的密度。
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22.发明授权
公开(公告)号：US5480627A
公开(公告)日：1996-01-02
申请号：US200651
申请日：1994-02-23
CPC分类号： G03G5/102 , G03G5/10 , Y10S29/095 , Y10T408/44 , Y10T82/10
摘要： A method of treating a substrate for an electrophotographic photosensitive member by a process comprises the steps;a) cutting the surface of the substrate to remove the surface in the desired thickness; andb) bringing the cut surface of the substrate into contact with water having a temperature of from 5.degree. C. to 90.degree. C., having a resistivity of not less than 11 M.OMEGA..multidot.cm at 25.degree. C., containing fine particles with a particle diameter of not smaller than 0.2 .mu.m in a quantity of not more than 10,000 particles per milliliter, containing microorganisms in a total viable cell count of not more than 100 per milliliter and containing an organic matter in a quantity of not more than 10 mg per liter, for at least 10 seconds at a pressure of from 1 kg.multidot.f/cm.sup.2 to 300 kg.multidot.f/cm.sup.2.
摘要翻译： 通过该方法处理电子照相感光构件的基板的方法包括以下步骤： a）切割基材的表面以除去所需厚度的表面; 和b）使基材的切割表面与温度为5℃至90℃的水接触，其在25℃下的电阻率不小于11M OMEGA xcm，其中包含具有 每毫升不超过10,000个颗粒的粒径不小于0.2μm的粒径，含有总活细胞数不超过100毫升的微生物，并且含有不大于10的有机物质 在1kgxf / cm 2至300kgxf / cm 2的压力下至少10秒钟。
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23.发明授权
公开(公告)号：US4766091A
公开(公告)日：1988-08-23
申请号：US946085
申请日：1986-12-24
申请人： Hirokazu Ohtoshi , Junichi Hanna , Isamu Shimizu
发明人： Hirokazu Ohtoshi , Junichi Hanna , Isamu Shimizu
IPC分类号： H01L31/04 , C23C16/02 , C23C16/24 , C23C16/30 , C23C16/44 , C23C16/48 , G03G5/08 , G03G5/082 , H01L21/205 , H01L21/263 , H01L21/336 , H01L29/78 , H01L29/786 , H01L31/075 , H01L31/09 , H01L31/20 , H01L21/20
CPC分类号： H01L21/02425 , C23C16/02 , C23C16/482 , C23C16/483 , G03G5/08235 , H01L21/02422 , H01L21/0245 , H01L21/02505 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/075 , H01L31/095 , H01L31/202 , Y02E10/548 , Y02P70/521 , Y10S438/909
摘要： A method for producing an electronic device having a multi-layer structure comprising one or more controlled band gap semiconductor thin layers formed on a substrate comprises forming at least one of said controlled band gap semiconductor thin layers according to the photo CVD method and forming at least one of the other constituent layers according to the method comprising introducing a gaseous starting material for film formation and a gaseous halogenic oxidizing agent having the property of oxidizing said starting material into a reaction space to effect chemical contact therebetween to thereby form a plurality of precursors including a precursor in an excited state and transferring at least one of these precursors into a film forming space communicated with the reaction space as a feed source for the constituent element of the deposited film.
摘要翻译： 一种具有多层结构的电子器件的制造方法，所述多层结构包括形成在衬底上的一个或多个受控带隙半导体薄层，包括根据所述光CVD法形成所述受控带隙半导体薄层中的至少一个，并至少形成 根据包括引入用于成膜的气态起始材料和具有将所述原料氧化成反应空间的特性的气态卤素氧化剂的方法之一，以在其间进行化学接触从而形成多种前体，包括 在激发态中的前体，并将这些前体中的至少一种转移到与反应空间连通的成膜空间中，作为沉积膜的构成元素的进料源。
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