公开(公告)号：US08741681B2

公开(公告)日：2014-06-03

申请号：US12903922

申请日：2010-10-13

申请人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

发明人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

IPC分类号： H01L31/18

CPC分类号： H01L27/1463 ,  H01L27/14643

摘要： A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

摘要翻译： 固态图像拾取装置包括电隔离阱区表面上的像素的元件隔离绝缘膜; 电隔离元件隔离绝缘膜下面的像素的第一隔离扩散层; 以及第二隔离扩散层，电隔离第一隔离扩散层下方的像素，其中电荷累积区域设置在由第一和第二隔离扩散层围绕的阱区域中，第一隔离扩散层的内周部分形成 投影区域，具有第一隔离扩散层的导电类型的杂质和具有电荷累积区域的导电类型的杂质在投影区域中混合，并且电荷累积区域和第二隔离区域之间的电荷累积区域的一部分 隔离扩散层与突出区域下方的第二隔离扩散层抵接或靠近。

公开(公告)号：US07898000B2

公开(公告)日：2011-03-01

申请号：US12080008

申请日：2008-03-31

申请人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

发明人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

IPC分类号： H01L31/0328

CPC分类号： H01L27/1463 ,  H01L27/14643

摘要： A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

公开(公告)号：US20090085142A1

公开(公告)日：2009-04-02

申请号：US12335338

申请日：2008-12-15

申请人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

发明人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

IPC分类号： H01L31/101

CPC分类号： H01L27/14601 ,  H01L27/1463 ,  H01L27/14689

摘要： A solid-state imaging device includes a plurality of pixels two-dimensionally arrayed in a well region disposed on a semiconductor substrate, each pixel including a photoelectric conversion section having a charge accumulation region which accumulates signal charge; an element isolation layer which is disposed on the surface of the well region along the peripheries of the individual charge accumulation regions and which electrically isolates the individual pixels from each other; and a diffusion layer which is disposed beneath the element isolation layer and which electrically isolates the individual pixels from each other, the diffusion layer having a smaller width than that of the element isolation layer. Each charge accumulation region is disposed so as to extend below the element isolation layer and be in contact with or in close proximity to the diffusion layer.

摘要翻译： 固态成像装置包括二维排列在设置在半导体基板上的阱区域中的多个像素，每个像素包括具有积累信号电荷的电荷累积区域的光电转换部分; 元件隔离层，其沿着各个电荷累积区域的周边设置在阱区域的表面上，并且将各个像素彼此电隔离; 以及扩散层，其设置在元件隔离层下方，并且将各个像素彼此电隔离，所述扩散层的宽度小于元件隔离层的宽度。 每个电荷累积区域设置成在元件隔离层的下方延伸并与扩散层接触或接近扩散层。

公开(公告)号：US07465598B2

公开(公告)日：2008-12-16

申请号：US11891535

申请日：2007-08-10

申请人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

发明人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

IPC分类号： H01L21/00

CPC分类号： H01L27/14601 ,  H01L27/1463 ,  H01L27/14689

摘要： A solid-state imaging device includes a plurality of pixels two-dimensionally arrayed in a well region disposed on a semiconductor substrate, each pixel including a photoelectric conversion section having a charge accumulation region which accumulates signal charge; an element isolation layer which is disposed on the surface of the well region along the peripheries of the individual charge accumulation regions and which electrically isolates the individual pixels from each other; and a diffusion layer which is disposed beneath the element isolation layer and which electrically isolates the individual pixels from each other, the diffusion layer having a smaller width than that of the element isolation layer. Each charge accumulation region is disposed so as to extend below the element isolation layer and be in contact with or in close proximity to the diffusion layer.

公开(公告)号：US20080191302A1

公开(公告)日：2008-08-14

申请号：US12080008

申请日：2008-03-31

申请人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

发明人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

IPC分类号： H01L27/146 ,  H01L21/76

CPC分类号： H01L27/1463 ,  H01L27/14643

摘要： A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

摘要翻译： 固态图像拾取装置包括电隔离阱区表面上的像素的元件隔离绝缘膜; 电隔离元件隔离绝缘膜下面的像素的第一隔离扩散层; 以及第二隔离扩散层，电隔离第一隔离扩散层下方的像素，其中电荷累积区域设置在由第一和第二隔离扩散层围绕的阱区域中，第一隔离扩散层的内周部分形成 投影区域，具有第一隔离扩散层的导电类型的杂质和具有电荷累积区域的导电类型的杂质在投影区域中混合，并且电荷累积区域和第二隔离区域之间的电荷累积区域的一部分 隔离扩散层与突出区域下方的第二隔离扩散层抵接或靠近。

公开(公告)号：US20060197113A1

公开(公告)日：2006-09-07

申请号：US11318176

申请日：2005-12-23

申请人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

发明人： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

IPC分类号： H01L27/148

CPC分类号： H01L27/14601 ,  H01L27/1463 ,  H01L27/14689

摘要： A solid-state imaging device includes a plurality of pixels two-dimensionally arrayed in a well region disposed on a semiconductor substrate, each pixel including a photoelectric conversion section having a charge accumulation region which accumulates signal charge; an element isolation layer which is disposed on the surface of the well region along the peripheries of the individual charge accumulation regions and which electrically isolates the individual pixels from each other; and a diffusion layer which is disposed beneath the element isolation layer and which electrically isolates the individual pixels from each other, the diffusion layer having a smaller width than that of the element isolation layer. Each charge accumulation region is disposed so as to extend below the element isolation layer and be in contact with or in close proximity to the diffusion layer.

摘要翻译： 固态成像装置包括二维排列在设置在半导体基板上的阱区域中的多个像素，每个像素包括具有积累信号电荷的电荷累积区域的光电转换部分; 元件隔离层，其沿着各个电荷累积区域的周边设置在阱区域的表面上，并且将各个像素彼此电隔离; 以及扩散层，其设置在所述元件隔离层下方，并且将所述各个像素彼此电隔离，所述扩散层的宽度小于所述元件隔离层的宽度。 每个电荷累积区域设置成在元件隔离层的下方延伸并与扩散层接触或接近扩散层。

公开(公告)号：US06252216B1

公开(公告)日：2001-06-26

申请号：US09149034

申请日：1998-09-08

申请人： Masanori Ohashi

发明人： Masanori Ohashi

IPC分类号： H01L2100

CPC分类号： H01L27/14601 ,  H01L27/14627

摘要： A solid state image pick-up device comprises a plurality of light receiving sensors which perform photoelectric conversion being disposed in a matrix form on the surface of a substrate, charge transfer portions for transferring signal charges, transfer electrodes positioned in the upper portions of the charge transfer portions and an interlayer insulating layer, and over the interlayer insulating layer a first stripe-on-chip lenses having approximate semicylindrical shapes are formed along the vertical or horizontal lines of light receiving light sensors and a second stripe-on-chip-lenses having an approximate semicylindrical shapes are formed over the first stripe-on-chip-lenses in a direction making a right angle with that of the first stripe-on-chip-lenses. The radius of curvature of the first stripe-on-chip-lenses and the second stripe-on-chip-lenses can be decided independent from each other, so that the optimum light condensing conditions are easily obtained, which makes it possible to obtain a solid state image pick-up device of excellent light sensitivity characteristics.

摘要翻译： 固体摄像装置包括：多个光接收传感器，其以矩阵形式设置在基板的表面上，用于传送信号电荷的电荷转移部分，位于电荷上部的转移电极 转移部分和层间绝缘层，并且在层间绝缘层之上沿着光接收光传感器的垂直或水平线形成具有近似半圆柱形状的第一条形片上透镜，并且具有第二条形片上片透镜，其具有 在与第一片上片式透镜成直角的方向上，在第一片上片上透镜上形成大致的半圆柱形状。 第一条形片上透镜和第二条形片上透镜的曲率半径可以彼此独立地确定，使得容易获得最佳的聚光条件，这使得可以获得 固态摄像装置具有出色的光敏特性。

公开(公告)号：US5288656A

公开(公告)日：1994-02-22

申请号：US949130

申请日：1992-09-23

申请人： Takahisa Kusaka ,  Hideo Kanbe ,  Akio Izumi ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Asai

发明人： Takahisa Kusaka ,  Hideo Kanbe ,  Akio Izumi ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Asai

IPC分类号： H01L27/148 ,  H01L31/0288 ,  H01L31/103 ,  H01L21/70

CPC分类号： H01L31/0288 ,  H01L27/14831 ,  H01L31/103 ,  Y02E10/50

摘要： In a CCD solid state image sensing device in which a photo-sensitive section is constructed by a photodiode formed by a PN junction between a first P-type well region and an N-type impurity diffusion region formed on an N-type silicon substrate, the N-type impurity diffusion region is formed by the ion implantation of single substance of arsenic (As). According to this CCD solid state image sensing device, a bright flaw on an image sensing screen, which is one of the defects encountered with an image sensing screen, can be reduced. Also, the n-type impurity diffusion region constructing the PN junction can be reduced in size and the CCD solid state image sensing device itself can be made compact in size. Further, a method of manufacturing a CCD solid state image sensing device also is provided.

摘要翻译： 在CCD固体摄像装置中，其中光敏部分由在第一P型阱区域和形成在N型硅衬底上的N型杂质扩散区域之间的PN结形成的光电二极管构成， 通过离子注入砷（As）的单一物质形成N型杂质扩散区。 根据该CCD固体摄像装置，可以减少图像感测画面上的亮度缺陷，这是图像感测画面遇到的缺陷之一。 此外，构造PN结的n型杂质扩散区域的尺寸可以减小，并且可以使CCD固态图像感测装置本身尺寸更小。 此外，还提供了一种制造CCD固态图像感测装置的方法。

公开(公告)号：US5282208A

公开(公告)日：1994-01-25

申请号：US686781

申请日：1991-04-17

申请人： Akira Takayama ,  Masanori Ohashi ,  Hitoshi Makita

发明人： Akira Takayama ,  Masanori Ohashi ,  Hitoshi Makita

IPC分类号： H04L29/06 ,  H04L29/08 ,  H04J3/12

CPC分类号： H04L67/06 ,  H04L69/04 ,  H04L69/329

摘要： In a digital network system, such as ISDN (Integrated Service Digital Network) system, a data link is established between transmit-side and receive-side stations so that a data transfer is performed onto a public telephone line in accordance with a predetermined protocol. The transmit-side station compresses data read from a storage medium and then transfers compressed data to the receive-side station, while the receive-side station expands the compressed data and then writes it into a storage medium. Before transferring the compressed data, the transmit-side station transmits a data transfer request to the receive-side station, so that if the receive-side station is now ready to receive the compressed data, the transmit-side station transfers the compressed data to the receive-side station. On the other hand, when completing a data transfer, the transmit-side station transmits an end request of data transfer to the receive-side station, so that if the receive-side station is now in a state to respond to a data transfer completion, the data link formed between the transmit-side and receive-side stations is terminated. Herein, the whole storage area of the storage medium is divided into plural storage blocks, so that the data transfer is performed with respect to each storage block. Preferably, the storage medium is a floppy disk, so that each storage block corresponds to each track formed on the floppy disk.

摘要翻译： 在诸如ISDN（综合业务数字网络）系统的数字网络系统中，在发送侧和接收侧站之间建立数据链路，使得根据预定协议在公共电话线上执行数据传输。 发送侧站压缩从存储介质读取的数据，然后将压缩数据传送到接收侧站，而接收站扩展压缩数据，然后将其写入存储介质。 在传送压缩数据之前，发送侧站向接收侧站发送数据传送请求，使得如果接收侧站现在准备好接收压缩数据，则发送侧站将压缩数据传送到 接收端站。 另一方面，当完成数据传送时，发送侧站向接收侧站发送数据传送的结束请求，使得如果接收侧站现在处于响应于数据传送完成的状态 在发送侧和接收侧站之间形成的数据链路终止。 这里，存储介质的整个存储区域被分成多个存储块，从而相对于每个存储块执行数据传送。 优选地，存储介质是软盘，使得每个存储块对应于形成在软盘上的每个轨道。