公开(公告)号：US4925755A

公开(公告)日：1990-05-15

申请号：US152159

申请日：1988-02-04

申请人： Hiroshi Yamaguchi ,  Keiya Saito ,  Akira Shimase ,  Satoshi Haraichi ,  Susumu Aiuchi ,  Nobuyuki Akiyama ,  Shinji Kuniyoshi ,  Takeshi Kimura

发明人： Hiroshi Yamaguchi ,  Keiya Saito ,  Akira Shimase ,  Satoshi Haraichi ,  Susumu Aiuchi ,  Nobuyuki Akiyama ,  Shinji Kuniyoshi ,  Takeshi Kimura

IPC分类号： G03F1/00 ,  G03F1/72 ,  G03F1/74 ,  H01L21/027

CPC分类号： G03F1/74 ,  G03F1/22

摘要： A method of correcting a circuit pattern such as an X-ray mask, carried out by first preparing a circuit pattern structure where a circuit pattern on a conductive film is coated with a protective film, then forming a hole or a slit by irradiating a high-intensity focused ion beam to a dropout defective portion in the circuit pattern of the circuit pattern structure, and plating such hole or slit while utilizing the conductive film as a plating electrode, thereby forming a metal frame to correct the dropout defective portion.

公开(公告)号：US4840487A

公开(公告)日：1989-06-20

申请号：US875980

申请日：1986-06-19

申请人： Minori Noguchi ,  Toru Otsubo ,  Susumu Aiuchi

发明人： Minori Noguchi ,  Toru Otsubo ,  Susumu Aiuchi

IPC分类号： H01L21/66 ,  G01B11/00 ,  G01B11/22 ,  H01J37/32

CPC分类号： H01J37/32935 ,  G01B11/22

摘要： An apparatus for measuring dry etching pits formed in a semiconductor device during the manufacture thereof by employing optical means. Wiring on semiconductor devices increasingly become fine or minute, i.e., the size of wiring of some devices is less than 1 .mu.m. A technical matter to be solved is to effect highly accurate dimensional measurement in such submicron region. The apparatus has a .theta. stage which is additionally provided on an XY stage, and a mechanism which provides excellent selectivity in detection of interference intensity of diffracted beam. In addition, a short wavelength laser, such as a He-Ne, He-Cd, N.sub.2 or Ar laser, is employed as a laser source. As a practical advantage, it is possible to monitor etching of a pit with a depth on the order of 10 .mu.m with respect to a pattern with a planar dimension of 0.3 .mu.m to 1.0 .mu.m.

摘要翻译： 一种用于测量在其制造期间在半导体器件中形成的干蚀刻凹坑的装置，其通过采用光学装置。 半导体器件上的布线越来越细微或微小，即某些器件的布线尺寸小于1μm。 要解决的技术问题是在这样的亚微米区域中实现高度精确的尺寸测量。 该装置具有另外设置在XY平台上的θ级，以及在检测衍射光束的干涉强度方面提供优异的选择性的机构。 此外，使用诸如He-Ne，He-Cd，N2或Ar激光器的短波长激光器作为激光源。 作为实际的优点，可以相对于平面尺寸为0.3μm〜1.0μm的图案来监视深度为10μm左右的凹坑的蚀刻。

公开(公告)号：US4808258A

公开(公告)日：1989-02-28

申请号：US662014

申请日：1984-10-18

申请人： Toru Otsubo ,  Susumu Aiuchi ,  Takashi Kamimura ,  Minoru Noguchi ,  Teru Fujii

发明人： Toru Otsubo ,  Susumu Aiuchi ,  Takashi Kamimura ,  Minoru Noguchi ,  Teru Fujii

IPC分类号： H01L21/302 ,  C23C16/517 ,  H01J37/32 ,  C23F1/02 ,  H01L21/306

CPC分类号： H01J37/32146 ,  C23C16/517 ,  H01J37/32155 ,  H01J37/32165

摘要： A plasma processing method and an apparatus for carrying out the method in which a processing gas is introduced into a processing chamber, and periodically an amplitude modulated or frequency-modulated high-frequency voltage is applied to plasma generating means, to generate a discharge plasma and to carry out predetermined processing by the plasma.

摘要翻译： 一种等离子体处理方法和装置，用于执行将处理气体引入处理室，并周期性地将调幅或调频的高频电压施加到等离子体产生装置，以产生放电等离子体和 以进行等离子体的预定处理。