公开(公告)号：US4925755A

公开(公告)日：1990-05-15

申请号：US152159

申请日：1988-02-04

申请人： Hiroshi Yamaguchi ,  Keiya Saito ,  Akira Shimase ,  Satoshi Haraichi ,  Susumu Aiuchi ,  Nobuyuki Akiyama ,  Shinji Kuniyoshi ,  Takeshi Kimura

发明人： Hiroshi Yamaguchi ,  Keiya Saito ,  Akira Shimase ,  Satoshi Haraichi ,  Susumu Aiuchi ,  Nobuyuki Akiyama ,  Shinji Kuniyoshi ,  Takeshi Kimura

IPC分类号： G03F1/00 ,  G03F1/72 ,  G03F1/74 ,  H01L21/027

CPC分类号： G03F1/74 ,  G03F1/22

摘要： A method of correcting a circuit pattern such as an X-ray mask, carried out by first preparing a circuit pattern structure where a circuit pattern on a conductive film is coated with a protective film, then forming a hole or a slit by irradiating a high-intensity focused ion beam to a dropout defective portion in the circuit pattern of the circuit pattern structure, and plating such hole or slit while utilizing the conductive film as a plating electrode, thereby forming a metal frame to correct the dropout defective portion.

公开(公告)号：US4933565A

公开(公告)日：1990-06-12

申请号：US216834

申请日：1988-07-08

申请人： Hiroshi Yamaguchi ,  Keiya Saito ,  Mitsuyoshi Koizumi ,  Akira Shimase ,  Satoshi Haraichi ,  Tateoki Miyauchi ,  Shinji Kuniyoshi ,  Susumu Aiuchi

发明人： Hiroshi Yamaguchi ,  Keiya Saito ,  Mitsuyoshi Koizumi ,  Akira Shimase ,  Satoshi Haraichi ,  Tateoki Miyauchi ,  Shinji Kuniyoshi ,  Susumu Aiuchi

IPC分类号： G01Q10/00 ,  G01Q70/14 ,  G03F1/00 ,  G03F1/22 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F1/74 ,  G03F1/22

摘要： The present invention relates to a method and apparatus for correcting defects of an X-ray mask which includes a focused ion beam used to irradiate at least a region having a defective portion of an X-ray mask having a protective film and eliminating the protective film; exposing a circuit pattern having a defective portion located under the region or setting this circuit pattern to the state near the exposure; detecting one of the secondary electrons, secondary ions, reflected electrons, or absorbing current generated from that region and detecting a true defective position. Then positioning the focused ion beam to the true defective position and irradiating the focused ion beam to the defective portion thereby correcting the defect.

公开(公告)号：US5497034A

公开(公告)日：1996-03-05

申请号：US318267

申请日：1994-10-05

申请人： Hiroshi Yamaguchi ,  Mikio Hongo ,  Tateoki Miyauchi ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Keiya Saito

发明人： Hiroshi Yamaguchi ,  Mikio Hongo ,  Tateoki Miyauchi ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Keiya Saito

IPC分类号： B21C27/00 ,  H01L21/00 ,  H01L21/3205 ,  H01L21/44 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H05K3/00 ,  H05K3/40 ,  H01L29/46

CPC分类号： H01L21/76879 ,  H01J37/3056 ,  H01L21/32051 ,  H01L21/67138 ,  H01L21/76892 ,  H05K3/0017 ,  H05K3/4076 ,  Y10S428/901 ,  Y10S438/94 ,  Y10S438/961 ,  Y10T428/12361 ,  Y10T428/31678

摘要： An IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the same multilayer IC chip. The insulating film or films covering conductive lines to be interconnected are processed by an energy beam such as a concentrated ion beam to form holes so as to expose the respective parts of the conductive lines where the conductive lines are to be interconnected, then a metal is deposited over the surfaces of the holes and an area interconnecting the holes by irradiating the surfaces of the holes and the area by an energy beam or a concentrated ion beam in an atmosphere of a gaseous organic metal compound to form a conductive metal film electrically interconnecting the conductive lines. Also provided is an apparatus for carrying out the IC wiring connecting method, which comprises, as essential components, an ion beam material processing system, an insulating film forming system such as a laser induced CVD unit, a conductive film forming system, and an insulating film etching system.

公开(公告)号：US4868068A

公开(公告)日：1989-09-19

申请号：US32753

申请日：1987-03-31

申请人： Hiroshi Yamaguchi ,  Mikio Hongo ,  Tateoki Miyauchi ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Keiya Saito

发明人： Hiroshi Yamaguchi ,  Mikio Hongo ,  Tateoki Miyauchi ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Keiya Saito

IPC分类号： B21C27/00 ,  H01L21/00 ,  H01L21/3205 ,  H01L21/44 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H05K3/00 ,  H05K3/40

CPC分类号： H01L21/76879 ,  H01J37/3056 ,  H01L21/32051 ,  H01L21/67138 ,  H01L21/76892 ,  H05K3/0017 ,  H05K3/4076 ,  Y10S428/901 ,  Y10S438/94 ,  Y10S438/961 ,  Y10T428/12361 ,  Y10T428/31678

摘要： A IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the same multilayer IC chip. The insulating film or films covering conductive lines to be interconnected are processed by an energy beam such as a concentrated ion beam to form holes so as to expose the respective parts of the conductive lines where the conductive lines are to be interconnected, then a metal is deposited over the surfaces of the holes and an area interconnecting the holes by irradiating the surfaces of the holes and the area by an energy beam or a concentrated ion beam in an atmosphere of a gaseous organic metal compound to form a conductive metal film electrically interconnecting the conductive lines. Also provided is an apparatus for carrying out the IC wiring connecting method, which comprises, as essential components, an ion beam material processing system, an insulating film forming system such as a laser induced CVD unit, a conductive film forming system, and an insulating film etching system.

摘要翻译： 一种用于互连用于校正布线的IC芯片的相同布线面的导线的IC布线连接方法，用于将相同位置处的多层IC芯片的不同布线通道的导线相互连接，或用于连接下层导体线 多层IC芯片的布线平面形成在同一多层IC芯片上的分离位置上的导线。 覆盖要互连的导电线的绝缘膜或膜由诸如浓缩离子束的能量束进行处理，以形成孔，以便露出导线与互连的相应部分，然后金属为 通过在气态有机金属化合物的气氛中通过能量束或浓缩离子束照射孔和区域的表面而沉积在孔的表面上的区域和互连孔的区域，以形成导电金属膜， 导线。 还提供了一种用于执行IC布线连接方法的装置，其包括作为主要组成部分的离子束材料处理系统，诸如激光诱导CVD单元的绝缘膜形成系统，导电膜形成系统和绝缘体 电影蚀刻系统。

公开(公告)号：US5824598A

公开(公告)日：1998-10-20

申请号：US561310

申请日：1995-11-21

申请人： Hiroshi Yamaguchi ,  Mikio Hongo ,  Tateoki Miyauchi ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Keiya Saito

发明人： Hiroshi Yamaguchi ,  Mikio Hongo ,  Tateoki Miyauchi ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Keiya Saito

IPC分类号： B21C27/00 ,  H01L21/00 ,  H01L21/3205 ,  H01L21/44 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H05K3/00 ,  H05K3/40

CPC分类号： H01L21/76879 ,  H01J37/3056 ,  H01L21/32051 ,  H01L21/67138 ,  H01L21/76892 ,  H05K3/0017 ,  H05K3/4076 ,  Y10S428/901 ,  Y10S438/94 ,  Y10S438/961 ,  Y10T428/12361 ,  Y10T428/31678

摘要： An IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the same multilayer IC chip. The insulating film or films covering conductive lines to be interconnected are processed by an energy beam such as a concentrated ion beam to form holes so as to expose the respective parts of the conductive lines where the conductive lines are to be interconnected, then a metal is deposited over the surfaces of the holes and an area interconnecting the holes by irradiating the surfaces of the holes and the area by an energy beam or a concentrated ion beam in an atmosphere of a gaseous organic metal compound to form a conductive metal film electrically interconnecting the conductive lines. Also provided is an apparatus for carrying out the IC wiring connecting method, which comprises, as essential components, an ion beam material processing system, an insulating film forming system such as a laser induced CVD unit, a conductive film forming system, and an insulating film etching system.

摘要翻译： 一种用于互连用于校正布线的IC芯片的相同布线面的导线的IC布线连接方法，用于将相同位置处的多层IC芯片的不同布线通道的导线相互连接，或用于连接下层导体线 多层IC芯片的布线平面形成在同一多层IC芯片上的分离位置上的导线。 覆盖要互连的导电线的绝缘膜或膜由诸如浓缩离子束的能量束进行处理，以形成孔，以便露出导线与互连的相应部分，然后金属为 通过在气态有机金属化合物的气氛中通过能量束或浓缩离子束照射孔和区域的表面而在孔的表面上沉积的区域和互连孔的区域，以形成将导电金属膜电连接 导线。 还提供了一种用于执行IC布线连接方法的装置，其包括作为主要组成部分的离子束材料处理系统，诸如激光诱导CVD单元的绝缘膜形成系统，导电膜形成系统和绝缘体 电影蚀刻系统。

公开(公告)号：US5472507A

公开(公告)日：1995-12-05

申请号：US238888

申请日：1994-05-06

申请人： Hiroshi Yamaguchi ,  Mikio Hongo ,  Tateoki Miyauchi ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Keiya Saito

发明人： Hiroshi Yamaguchi ,  Mikio Hongo ,  Tateoki Miyauchi ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Keiya Saito

IPC分类号： B21C27/00 ,  H01L21/00 ,  H01L21/3205 ,  H01L21/44 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H05K3/00 ,  H05K3/40 ,  C23C16/00

CPC分类号： H01L21/76879 ,  H01J37/3056 ,  H01L21/32051 ,  H01L21/67138 ,  H01L21/76892 ,  H05K3/0017 ,  H05K3/4076 ,  Y10S428/901 ,  Y10S438/94 ,  Y10S438/961 ,  Y10T428/12361 ,  Y10T428/31678

摘要： An IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the same multilayer IC chip. The insulating film or films covering conductive lines to be interconnected are processed by an energy beam such as a concentrated ion beam to form holes so as to expose the respective parts of the conductive lines where the conductive lines are to be interconnected, then a metal is deposited over the surfaces of the holes and an area interconnecting the holes by irradiating the surfaces of the holes and the area by an energy beam or a concentrated ion beam in an atmosphere of a gaseous organic metal compound to form a conductive metal film electrically interconnecting the conductive lines. Also provided is an apparatus for carrying out the IC wiring connecting method, which comprises, as essential components, an ion beam material processing system, an insulating film forming system such as a laser induced CVD unit, a conductive film forming system, and an insulating film etching system.

摘要翻译： 一种用于互连用于校正布线的IC芯片的相同布线面的导线的IC布线连接方法，用于将相同位置处的多层IC芯片的不同布线通道的导线相互连接，或用于连接下层导体线 多层IC芯片的布线平面形成在同一多层IC芯片上的分离位置上的导线。 覆盖要互连的导电线的绝缘膜或膜由诸如浓缩离子束的能量束进行处理，以形成孔，以便露出导线与互连的相应部分，然后金属为 通过在气态有机金属化合物的气氛中通过能量束或浓缩离子束照射孔和区域的表面而在孔的表面上沉积的区域和互连孔的区域，以形成将导电金属膜电连接 导线。 还提供了一种用于执行IC布线连接方法的装置，其包括作为主要组成部分的离子束材料处理系统，诸如激光诱导CVD单元的绝缘膜形成系统，导电膜形成系统和绝缘体 电影蚀刻系统。

公开(公告)号：US06753253B1

公开(公告)日：2004-06-22

申请号：US07584180

申请日：1990-09-18

申请人： Takahiko Takahashi ,  Fumikazu Itoh ,  Akira Shimase ,  Mikio Hongo ,  Satoshi Haraichi ,  Hiroshi Yamaguchi

发明人： Takahiko Takahashi ,  Fumikazu Itoh ,  Akira Shimase ,  Mikio Hongo ,  Satoshi Haraichi ,  Hiroshi Yamaguchi

IPC分类号： H01L2144

CPC分类号： H01L23/544 ,  H01J37/304 ,  H01J37/3056 ,  H01J2237/30466 ,  H01J2237/31749 ,  H01L21/32051 ,  H01L21/768 ,  H01L21/76879 ,  H01L21/76888 ,  H01L21/76892 ,  H01L21/76894 ,  H01L22/22 ,  H01L23/525 ,  H01L23/5254 ,  H01L23/552 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05027 ,  H01L2224/05554 ,  H01L2224/05572 ,  H01L2224/11 ,  H01L2224/1147 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01009 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01065 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/1204 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/15312 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3025 ,  Y10S438/94 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/00012

摘要： Herein disclosed are a variety of techniques relating to the wiring and logic corrections on a chip by making use of the focused ion beam (which is shortly referred to as “FIB”) or the laser selection metal CVD. The time periods for the wiring corrections and for debugging and developing an electronic system are shortened by making use of the processing characteristics of the FIB. Illustratively, a hole is bored in an insulating film above a portion of a wiring which is to be connected to another wiring by means of a focused ion beam. The inside of the hole and a predetermined region on the insulating film are irradiated with either a laser beam or an ion beam in a metal compound gas to deposit metal in the hole and on said region and a connecting wiring is formed by means of optically pumped CVD. The present invention also relates to an IC or VLSI structure having a trial cutting region, at test etching region and an auxiliary wiring or pad, suitable for the application of such defect correction and circuit change, as well as a method of making same, a designing method using such technique, and a focused ion beam system and other systems for use in those methods.

摘要翻译： 这里公开了通过利用聚焦离子束（其被简称为“FIB”）或激光选择金属CVD与芯片上的布线和逻辑校正有关的各种技术。 通过利用FIB的处理特性，缩短布线校正和调试开发电子系统的时间。 示例性地，在通过聚焦离子束连接到另一布线的布线的一部分上方的绝缘膜中钻孔。 在绝缘膜的内部和绝缘膜上的预定区域用金属化合物气体中的激光束或离子束照射以在孔中和所述区域上沉积金属，并且通过光泵浦形成连接布线 CVD。 本发明还涉及一种IC或VLSI结构，其具有在测试蚀刻区域处的试验切割区域和适于应用这种缺陷校正和电路改变的辅助布线或焊盘，以及其制造方法 使用这种技术的设计方法，以及用于这些方法的聚焦离子束系统和其它系统。

公开(公告)号：US5358806A

公开(公告)日：1994-10-25

申请号：US854861

申请日：1992-03-19

申请人： Satoshi Haraichi ,  Fumikazu Itoh ,  Akira Shimase ,  Hiroshi Yamaguchi ,  Junzou Azuma ,  Yasuhiro Koizumi

发明人： Satoshi Haraichi ,  Fumikazu Itoh ,  Akira Shimase ,  Hiroshi Yamaguchi ,  Junzou Azuma ,  Yasuhiro Koizumi

IPC分类号： G03F1/26 ,  G03F1/74 ,  G03F9/00

CPC分类号： H01J37/228 ,  G03F1/74 ,  H01J37/3056 ,  G03F1/26 ,  H01J2237/2482 ,  H01J2237/30466

摘要： A defect of a phase shift mask, which has a phase shifter disposed on a transparent substrate, formed into a predetermined pattern and acting to shift a phase of exposure light transmitted therethrough and an etching stopper disposed between the phase shifter and the transparent substrate, which is resistant to an etching to which the phase shifter is subjected and transparent for exposure light is corrected by selectively etching a defective portion of the phase shifter, having a lacking type defect, with respect to the etching stopper layer along the whole thickness of the phase shifter and by perforating a portion of the etching stopper layer and the transparent substrate positioned under the etched defective portion by a depth which corresponds to a magnitude of an optical path of the phase shifter for the exposure light, the etching being a reactive etching which uses charged particle beam and a reactive gas and, the bottom surface of a portion etched being flattened by utilizing a fact that the phase shifter is selectively etched.

摘要翻译： 具有设置在透明基板上的移相器的相移掩模的缺陷形成为预定图案并且用于移动透过其的曝光光的相位和设置在移相器和透明基板之间的蚀刻阻挡层， 对于移相器经受的蚀刻和曝光的透明度的蚀刻是通过沿相位的整个厚度相对于蚀刻停止层选择性蚀刻缺陷型缺陷的相移器的缺陷部分而被校正的 并且通过将位于蚀刻的缺陷部分下方的蚀刻阻挡层和透明基板的一部分穿孔相当于用于曝光光的移相器的光路的大小的深度，蚀刻是使用的反应性蚀刻 带电粒子束和反应性气体，并且通过利用被蚀刻的部分的底表面变平 移相器被选择性蚀刻的事实。

公开(公告)号：US4683378A

公开(公告)日：1987-07-28

申请号：US754930

申请日：1985-07-15

申请人： Akira Shimase ,  Hiroshi Yamaguchi ,  Satoshi Haraichi ,  Tateoki Miyauchi

发明人： Akira Shimase ,  Hiroshi Yamaguchi ,  Satoshi Haraichi ,  Tateoki Miyauchi

IPC分类号： H01J37/28 ,  G01N23/225 ,  G21K5/04 ,  H01J37/22 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01L21/027 ,  H01L21/265 ,  H01L21/30 ,  H01L21/66 ,  H01J37/302

CPC分类号： H01J37/3056 ,  H01J37/3005 ,  H01J37/304

摘要： This invention discloses an ion beam work apparatus which comprises ion mean radiation means for focusing and radiating an ion beam extracted from an ion source to a target put on a moving mechanism, and scanning two-dimensionally the radiation position; secondary particle detection means for detecting the secondary particles generated from the target upon radiation of the ion beam; and superposition-display means for superposing the secondary particle image with a different kind of image containing such information that is not contained in the secondary particle image, and displaying the resulting image; and which can accurately position the beam radiation position to lower wiring layers of the target such as a semiconductor device that can not be observed by the secondary particle image obtained by scanning the focused ion beam.

摘要翻译： 本发明公开了一种离子束加工装置，其包括离子平均辐射装置，用于聚焦和辐射从离子源提取的离子束到放置在移动机构上的靶，并且二维地扫描辐射位置; 二次粒子检测装置，用于在辐射离子束时检测从靶产生的二次粒子; 以及叠加显示装置，用于将二次粒子图像与包含不包含在二次粒子图像中的信息的不同种类的图像叠加，并显示所得到的图像; 并且可以将射束放射位置精确地定位到目标物的下布线层，例如通过扫描聚焦离子束而获得的二次粒子图像不能观察到的半导体器件。

公开(公告)号：US4983540A

公开(公告)日：1991-01-08

申请号：US273012

申请日：1988-11-18

申请人： Hiroshi Yamaguchi ,  Keiya Saito ,  Fumikazu Itoh ,  Koji Ishida ,  Shinji Sakano ,  Masao Tamura ,  Shoji Shukuri ,  Tohru Ishitani ,  Tsuneo Ichiguchi

发明人： Hiroshi Yamaguchi ,  Keiya Saito ,  Fumikazu Itoh ,  Koji Ishida ,  Shinji Sakano ,  Masao Tamura ,  Shoji Shukuri ,  Tohru Ishitani ,  Tsuneo Ichiguchi

IPC分类号： H01L21/20 ,  G01Q30/16 ,  G01Q60/44 ,  H01J37/08 ,  H01J37/305 ,  H01L21/203 ,  H01L21/205 ,  H01L21/263 ,  H01L21/265 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/338 ,  H01L21/822 ,  H01L21/8252 ,  H01L29/06 ,  H01L29/15 ,  H01L29/778 ,  H01L29/812

CPC分类号： H01J37/3056 ,  B82Y10/00 ,  H01J37/08 ,  H01L21/2633 ,  H01L21/26546 ,  H01L21/8221 ,  H01L21/8252 ,  H01L29/151 ,  Y10S148/046 ,  Y10S148/051 ,  Y10S148/084 ,  Y10S148/16 ,  Y10S438/962

摘要： An ion beam (113) focused into a diameter of at most 0.1 .mu.m bombards substantially perpendicularly to the superlattice layers of a one-dimensional superlattice structure and is scanned rectilinearly in a direction of the superlattice layers so as to form at least two parallel grooves (108, 109, 110, 111) or at least two parallel impurity-implanted parts (2109) as potential barrier layers, whereby a device of two-dimensional superlattice structure can be manufactured. At least two parallel grooves (114, 115, 116, 117) or impurity-implanted parts are further formed orthogonally to the potential barrier layers of the two-dimensional superlattice structure, whereby a device of three-dimensional superlattice structure can be manufactured. In addition, deposition parts (2403, 2404, 2405) may well be provided by further depositing an insulator into the grooves (108, 109, 110, 111, 114, 115, 116, 117) which are formed by the scanning of the ion beam. Owing to these expedients, the portions of the two-dimensional and three-dimensional superlattice structures can be manufactured with ease and at high precision.