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28 条记录 (耗时 0.032 秒)

    Process for preparation of polyacetylene film
    21.
    发明授权
    Process for preparation of polyacetylene film 失效
    聚乙炔薄膜的制备方法

    公开(公告)号：US5008040A

    公开(公告)日：1991-04-16

    申请号：US250735

    申请日：1988-09-29

    申请人： Jun Tsukamoto ,  Akio Takahashi

    发明人： Jun Tsukamoto ,  Akio Takahashi

    IPC分类号： C08F38/02 ,  H01B1/12

    CPC分类号： H01B1/125 ,  C08F38/02

    摘要： A polyacetylene film having a high electroconductivity is prepared by (a) heating a Ziegler-Natta catalyst at a temperature not lower than 150.degree. C. in an organic solvent and then, cooling the catalyst-solvent mixture, (b) removing coarse catalyst particles having a diameter of larger than 1 .mu.m from the catalyst-solvent mixture by filtration to form a catalyst dispersion for polymerization, (c) introducing acetylene into the catalyst dispersion to effect polymerization of acetylene, and (d) drawing the formed polymer and treating the drawn polymer with a dopant.

    摘要翻译： 通过（a）在有机溶剂中，在不低于150℃的温度下加热齐格勒 - 纳塔催化剂，然后冷却催化剂 - 溶剂混合物，制备具有高导电性的聚乙炔膜，（b）除去粗催化剂颗粒 通过过滤从催化剂 - 溶剂混合物中直径大于1μm，形成用于聚合的催化剂分散体，（c）将乙炔引入催化剂分散体中以实现乙炔的聚合，和（d）拉伸所形成的聚合物和处理 拉伸聚合物与掺杂剂。

    Electron donating organic material for photovoltaic devices, material for photovoltaic devices, and photovoltaic device
    26.
    发明授权
    Electron donating organic material for photovoltaic devices, material for photovoltaic devices, and photovoltaic device 失效
    用于光伏器件的电子给予有机材料，光伏器件的材料和光伏器件

    公开(公告)号：US08269099B2

    公开(公告)日：2012-09-18

    申请号：US12441150

    申请日：2007-10-04

    申请人： Daisuke Kitazawa ,  Jun Tsukamoto ,  Yukari Jo

    发明人： Daisuke Kitazawa ,  Jun Tsukamoto ,  Yukari Jo

    IPC分类号： H01L31/04 ,  H01B1/12 ,  H01L31/00 ,  H01B1/00

    CPC分类号： C08G61/126 ,  B82Y10/00 ,  C08G61/123 ,  H01L51/0036 ,  H01L51/0039 ,  H01L51/0043 ,  H01L51/0049 ,  H01L51/4253 ,  Y02E10/549

    摘要： A photovoltaic device with high photoelectric conversion efficiency includes an electron donating organic material for photovoltaic devices containing a conjugated polymer represented by formula (1): wherein R1 to R10 may be the same or different from each other and are each selected from the group consisting of hydrogen, an alkyl group, an alkoxy group and an aryl group; R11 and R12 may be the same or different from each other and are each selected from the group consisting of hydrogen, an alkyl group, an aryl group, a heteroaryl group and halogen; W, X, Y and Z may be the same or different from each other and are each selected from the group consisting of a single bond, an arylene group, a heteroarylene group, an ethenylene group, and an ethynylene group; m is 0 or 1; n is within a range of 1 to 1000.

    摘要翻译： 具有高光电转换效率的光电器件包括用于含有由式（1）表示的共轭聚合物的光伏器件的给电子有机材料：其中R 1至R 10可以彼此相同或不同，并且各自选自 氢，烷基，烷氧基和芳基; R 11和R 12可以彼此相同或不同，并且各自选自氢，烷基，芳基，杂芳基和卤素; W，X，Y和Z可以相同或不同，分别选自单键，亚芳基，亚杂亚芳基，亚乙烯基和亚乙炔基; m为0或1; n在1〜1000的范围内。

    GATE INSULATING MATERIAL, GATE INSULATING FILM AND ORGANIC FIELD-EFFECT TRANSISTOR
    27.
    发明申请
    GATE INSULATING MATERIAL, GATE INSULATING FILM AND ORGANIC FIELD-EFFECT TRANSISTOR 有权
    栅绝缘材料，栅绝缘膜和有机场效应晶体管

    公开(公告)号：US20110068417A1

    公开(公告)日：2011-03-24

    申请号：US12933417

    申请日：2009-02-27

    申请人： Seiichiro Murase ,  Takenori Fujiwara ,  Yukari Jo ,  Jun Tsukamoto

    发明人： Seiichiro Murase ,  Takenori Fujiwara ,  Yukari Jo ,  Jun Tsukamoto

    IPC分类号： H01L29/78

    CPC分类号： H01L51/052 ,  C08G59/306 ,  C08G59/3281 ,  C08G65/20 ,  C08G77/14 ,  C09D163/00 ,  G03F7/0757 ,  H01B3/40 ,  H01B3/46 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L51/0036 ,  H01L51/0068 ,  H01L51/0545

    摘要： To provide a gate insulating material which has high chemical resistance, is superior in coatability of a resist and an organic semiconductor coating liquid, and has small hysteresis, a gate insulating film and an FET using the same by a polysiloxane having an epoxy group-containing silane compound as a copolymerization component.A gate insulating material containing a polysiloxane having, as copolymerization components, at least a silane compound represented by the general formula (1): R1mSi(OR2)4-m  (1), wherein R1 represents hydrogen, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group or an alkenyl group and in the case where a plurality of R1s are present, R1s may be the same or different, R2 represents an alkyl group or a cycloalkyl group and in the case where a plurality of R2s are present, R2s may be the same or different, and m represents an integer of 1 to 3, and an epoxy group-containing silane compound represented by the general formula (2): R3nR4lSi(OR5)4-n-1  (2), wherein R3 represents an alkyl group or a cycloalkyl group having one or more epoxy groups in a part of a chain and in the case where a plurality of R3s are present, R3s may be the same or different, R4 represents hydrogen, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group or an alkenyl group and in the case where a plurality of R4s are present, R4s may be the same or different, R5 represents an alkyl group or a cycloalkyl group and in the case where a plurality of R5s are present, R5s may be the same or different, l represents an integer of 0 to 2, and n represents 1 or 2 (however, l+n≦3).

    摘要翻译： 为了提供耐化学性高的栅极绝缘材料，具有优异的抗蚀剂和有机半导体涂布液的涂布性，并且具有较小的滞后性，栅极绝缘膜和使用该绝缘材料的FET通过具有含环氧基的聚硅氧烷 硅烷化合物作为共聚成分。 含有作为共聚成分的至少一种由通式（1）表示的硅烷化合物的聚硅氧烷的栅绝缘材料：R1mSi（OR2）4-m（1），其中R1表示氢，烷基，环烷基 ，杂环基，芳基，杂芳基或烯基，在存在多个R 1的情况下，R 1可以相同或不同，R 2表示烷基或环烷基，在 存在多个R 2，R 2可以相同或不同，m表示1〜3的整数，和由通式（2）表示的含环氧基的硅烷化合物：R3nR4lSi（OR5）4-n- 1（2）其中R3表示一部分链中具有一个或多个环氧基的烷基或环烷基，在存在多个R 3的情况下，R 3可以相同或不同，R 4表示氢 ，烷基，环烷基，杂环基，芳基g 稠环，杂芳基或烯基，在存在多个R 4的情况下，R 4可以相同或不同，R 5表示烷基或环烷基，在存在多个R 5的情况下， R5可以相同或不同，l表示0〜2的整数，n表示1或2（然而，l + n＆nlE; 3）。