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    Semiconductor element and method and apparatus for fabricating the same
    25.
    发明授权
    Semiconductor element and method and apparatus for fabricating the same 失效
    半导体元件及其制造方法和装置

    公开(公告)号：US6132585A

    公开(公告)日：2000-10-17

    申请号：US749727

    申请日：1996-11-15

    申请人： Takafumi Midorikawa ,  Tsutomu Murakami ,  Takahiro Mori ,  Hirofumi Ichinose

    发明人： Takafumi Midorikawa ,  Tsutomu Murakami ,  Takahiro Mori ,  Hirofumi Ichinose

    IPC分类号： H01L31/04 ,  H01L31/20 ,  C25D5/02

    CPC分类号： H01L31/208 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S136/29

    摘要： The present invention aims to provide a highly reliable semiconductor element with high performance, and a fabrication method for such highly reliable semiconductor with excellent mass producibility. The photovoltaic elements comprise an electric conductor, semiconductor regions and a transparent conductor layer, which are sequentially formed on a substrate. The shunt resistance in the semiconductor element is rendered in the range from 1.times.10.sup.3 .OMEGA.cm.sup.2 to 1.times.10.sup.6 .OMEGA.cm.sup.2 by performing a forming treatment and a short circuit passivation treatment after forming the transparent conductor layer, and then selectively covering with insulation the defective portions with a cationic or anionic electrodeposited resin, or performing a forming treatment, after forming the semiconductor layers, then selectively covering with insulation the defective portions with a cationic or anionic electrodeposited resin, and then forming the transparent conductor layer.

    摘要翻译： 本发明旨在提供一种具有高性能的高可靠性半导体元件，以及具有优异的大规模生产能力的这种高可靠性半导体的制造方法。 光电元件包括​​依次形成在基板上的电导体，半导体区域和透明导体层。 通过在形成透明导体层之后进行成形处理和短路钝化处理，半导体元件中的分流电阻在1×10 3欧姆·cm2至1×10 6欧姆·平方厘米的范围内，然后用阳离子选择性地覆盖缺陷部分 或阴离子电沉积树脂，或者在形成半导体层之后进行成形处理，然后用阳离子或阴离子电沉积树脂绝缘地选择性地覆盖缺陷部分，然后形成透明导体层。

    Method of producing photovoltaic element
    27.
    发明授权
    Method of producing photovoltaic element 有权
    生产光电元件的方法

    公开(公告)号：US06221685B1

    公开(公告)日：2001-04-24

    申请号：US09203361

    申请日：1998-12-02

    申请人： Hirofumi Ichinose ,  Tsutomu Murakami ,  Yukie Ueno

    发明人： Hirofumi Ichinose ,  Tsutomu Murakami ,  Yukie Ueno

    IPC分类号： H01L2100

    CPC分类号： H01L21/67086 ,  H01L21/67075

    摘要： The present invention provides a method of producing a photovoltaic element, which comprises a step of immersing a photovoltaic element having at least a first electrode layer, a semiconductor layer and a second electrode layer formed on a substrate into an electrolytic solution, and removing a short circuit current path caused by a defect in the photovoltaic element under the effect of an electric field, wherein the amount of a first ingredient and the amount of a second ingredient contained in the electrolytic solution are adjusted to control the concentration of hydrogen ions in the electrolytic solution, wherein the constituent substance of the second electrode layer is electrically dissolved by the first ingredient, and thereby it also provides a method of producing photovoltaic elements which is capable of reducing a leakage current caused by defect portions such as pin-holes existing in the photovoltaic elements with a large area to obtain photovoltaic elements with excellent photovoltage generation characteristics under a low illuminance.

    摘要翻译： 本发明提供了一种光电元件的制造方法，其特征在于，具有：将具有至少形成在基板上的第一电极层，半导体层和第二电极层的光电元件浸渍到电解液中的步骤， 在电场效应下由光电元件的缺陷引起的电路电流路径，其中第一成分的量和电解液中包含的第二成分的量被调节以控制电解液中氢离子的浓度 溶液，其中第二电极层的构成物质被第一成分电解，从而还提供一种生产光电元件的方法，该光电元件能够减少由存在于第二电极层的缺陷部分 具有大面积光伏元件，获得优异的光电元件 低照度下的电压产生特性。

    Electrolytic etching method and apparatus
    28.
    发明授权
    Electrolytic etching method and apparatus 失效
    电解蚀刻方法和装置

    公开(公告)号：US07691241B2

    公开(公告)日：2010-04-06

    申请号：US10998617

    申请日：2004-11-30

    申请人： Tsutomu Murakami ,  Koji Tsuzuki

    发明人： Tsutomu Murakami ,  Koji Tsuzuki

    IPC分类号： C25F3/14 ,  C25F7/00

    CPC分类号： B23H3/00 ,  B23H3/04 ,  C25F3/14 ,  C25F7/00 ,  H01L31/18

    摘要： The present invention relates to a method and apparatus for partial etching or pattern etching using an electrolysis reaction, wherein, conventionally, there was the problem that an etching line could not be finely formed on a cell edge because of apparatus problems concerning alignment accuracy. The present invention provides a method and apparatus with which fine line etching is possible and which can form a line on a cell edge.Provided is a an electrolytic etching method of a substrate which is formed having a subject etching layer on a surface, having the steps of providing a fixed gap from a substrate end surface which is external to an end surface of the substrate for placing a working part of a working electrode and passing current between the substrate and the working electrode.

    摘要翻译： 本发明涉及一种使用电解反应进行局部蚀刻或图案蚀刻的方法和装置，其中传统上存在由于关于对准精度的装置问题而在细胞边缘上不能精细地形成蚀刻线的问题。 本发明提供了可以进行细线蚀刻并且可以在单元边缘上形成线的方法和装置。 本发明提供一种基板的电解蚀刻方法，该方法形成在表面上具有被摄体蚀刻层，具有从基板端面提供固定间隙的步骤，该基板端面位于基板的端面外部，用于放置工作部分 的工作电极，并在基板和工作电极之间通过电流。

    Electrolytic etching method and method of producing a solar battery
    29.
    发明授权
    Electrolytic etching method and method of producing a solar battery 失效
    电解蚀刻方法及太阳能电池的制造方法

    公开(公告)号：US08052861B2

    公开(公告)日：2011-11-08

    申请号：US12707430

    申请日：2010-02-17

    申请人： Tsutomu Murakami ,  Koji Tsuzuki

    发明人： Tsutomu Murakami ,  Koji Tsuzuki

    IPC分类号： C25F3/14

    CPC分类号： B23H3/00 ,  B23H3/04 ,  C25F3/14 ,  C25F7/00 ,  H01L31/18

    摘要： The present invention relates to a method and apparatus for partial etching or pattern etching using an electrolysis reaction, wherein, conventionally, there was the problem that an etching line could not be finely formed on a cell edge because of apparatus problems concerning alignment accuracy. The present invention provides a method and apparatus with which fine line etching is possible and which can form a line on a cell edge.Provided is a an electrolytic etching method of a substrate which is formed having a subject etching layer on a surface, having the steps of providing a fixed gap from a substrate end surface which is external to an end surface of the substrate for placing a working part of a working electrode and passing current between the substrate and the working electrode.

    摘要翻译： 本发明涉及一种使用电解反应进行局部蚀刻或图案蚀刻的方法和装置，其中传统上存在由于关于对准精度的装置问题而在细胞边缘上不能精细地形成蚀刻线的问题。 本发明提供了可以进行细线蚀刻并且可以在单元边缘上形成线的方法和装置。 本发明提供一种基板的电解蚀刻方法，该方法形成在表面上具有被摄体蚀刻层，具有从基板端面提供固定间隙的步骤，该基板端面位于基板的端面外部，用于放置工作部分 的工作电极，并在基板和工作电极之间通过电流。

    Photovoltaic element and process for the production thereof
    30.
    发明授权
    Photovoltaic element and process for the production thereof 有权
    光伏元件及其制造方法

    公开(公告)号：US06689951B2

    公开(公告)日：2004-02-10

    申请号：US10144719

    申请日：2002-05-15

    申请人： Koichi Shimizu ,  Tsutomu Murakami ,  Koji Tsuzuki

    发明人： Koichi Shimizu ,  Tsutomu Murakami ,  Koji Tsuzuki

    IPC分类号： H01L304

    CPC分类号： H01L31/022425 ,  Y02E10/50

    摘要： A photovoltaic element having an electrode structure having joining portions (A) in which collecting electrodes are spacedly arranged on a light receiving face side of the photovoltaic element such that they are individually joined to a bus bar electrode. Each of the joining portions (A) has a first joining portion (i) having a first paste. Each of collecting electrodes (b) excluding the collecting electrodes (a) positioned at opposite end sides of the arrangement of the collecting electrodes further has a second joining portion (ii) having a second paste with a smaller resistivity than that of the first paste. A proportion of the first joining portion (i) in the joining portion (A) of each of the collecting electrodes (a) is greater than a proportion of the first joining portion (i) in the joining portion (A) of each of the collecting electrodes (b). A process for the production of the photovoltaic element.

    摘要翻译： 一种具有电极结构的光电元件，具有接合部分（A），其中收集电极间隔地设置在光电元件的光接收面侧，使得它们分别接合到母线电极。 每个接合部分（A）具有具有第一浆料的第一接合部分（i）。 除了位于集电电极的配置的相对端侧的集电极（a）之外的每个集电极（b）还具有第二接合部分（ii），其具有比第一浆料的电阻率小的第二焊膏。 每个集电电极（a）的接合部分（A）中的第一接合部分（i）的比例大于第一接合部分（i）在接合部分（A）中的比例 收集电极（b）。 一种用于生产光伏元件的方法。