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    Magneto-resistance element capable of controlling the position and size of edge domain and the coercivity and magnetic memory
    24.
    发明授权
    Magneto-resistance element capable of controlling the position and size of edge domain and the coercivity and magnetic memory 有权
    能够控制边缘域的位置和大小以及矫顽力和磁记忆的磁阻元件

    公开(公告)号：US06765824B2

    公开(公告)日：2004-07-20

    申请号：US10391423

    申请日：2003-03-19

    申请人： Tatsuya Kishi ,  Yoshiaki Saito ,  Minoru Amano ,  Shigeki Takahashi ,  Katsuya Nishiyama ,  Tomomasa Ueda

    发明人： Tatsuya Kishi ,  Yoshiaki Saito ,  Minoru Amano ,  Shigeki Takahashi ,  Katsuya Nishiyama ,  Tomomasa Ueda

    IPC分类号： G11C1115

    CPC分类号： G11C11/15 ,  G11C11/5607

    摘要： There is provided a magnetoresistance element in which a shape of a free ferromagnetic layer includes a first portion with a parallelogrammic contour, and second portions that protrude from a pair of opposite corners of the first portion respectively in a main direction parallel to a pair of opposite sides of the first portion, the shape is asymmetric with respect to a line that passes through a center of the first portion and is parallel to the main direction, and an axis of easy magnetization of the free ferromagnetic layer falls within a range defined by an acute angle that a first direction makes with a second direction, the first direction being substantially parallel to the main direction and the second direction being substantially parallel to the longest line segment that joins contours of the second portions.

    摘要翻译： 提供了一种磁阻元件，其中自由铁磁层的形状包括具有平行四边形轮廓的第一部分，以及第二部分，其在与主要方向平行的一对相反侧的第一部分的一对相对的角部分别突出 第一部分的侧面，该形状相对于穿过第一部分的中心并且平行于主方向的线是不对称的，并且自由铁磁性层的容易磁化的轴线落在由 第一方向与第二方向形成的锐角，第一方向基本上平行于主方向，第二方向基本上平行于连接第二部分的轮廓的最长线段。

    Magnetic memory
    25.
    发明授权
    Magnetic memory 失效
    磁记忆

    公开(公告)号：US06934184B2

    公开(公告)日：2005-08-23

    申请号：US10893915

    申请日：2004-07-20

    申请人： Minoru Amano ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Yoshihisa Iwata

    发明人： Minoru Amano ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Yoshihisa Iwata

    IPC分类号： H01L27/105 ,  G11C11/15 ,  H01L21/8246 ,  H01L43/08

    CPC分类号： G11C11/15

    摘要： A highly reliable magnetic memory exhibits enhanced data-holding stability at high storage density in a storage layer of a magnetoresistive effect element used for memory cells. A magnetic memory includes a memory cell array having first wirings, second wirings intersecting the first wirings and memory cells each provided at an intersection area of the corresponding first and second wirings. Each memory cell is selected when the corresponding first and second wirings are selected. Each memory cell includes a magnetoresistive effect element having a storage layer in which data is stored by magnetic fields generated when current flows the selected first and second wirings, a first magnetic member, having two ends, provided as partially surrounding each first wiring and the two ends being situated in a direction of easy axis of magnetization, to form a closed-loop magnetic circuitry with the storage layer, and a second magnetic member, having two ends, provided as partially surrounding each second wiring and the two ends being situated in a direction of hard axis of magnetization, to amplify magnetic fields applied to the storage layer in the direction of hard axis of magnetization. Each end of the first magnetic member is situated as closer than each end of the second magnetic member to the storage layer.

    摘要翻译： 在用于存储单元的磁阻效应元件的存储层中，高度可靠的磁存储器在高存储密度下表现出增强的数据保持稳定性。 磁存储器包括具有第一布线的存储单元阵列，与第一布线相交的第二布线和各自设置在相应的第一布线和第二布线的交叉区域的存储单元。 当选择对应的第一和第二布线时，选择每个存储单元。 每个存储单元包括磁阻效应元件，其具有存储层，其中当电流流过所选择的第一和第二布线时，通过产生的磁场来存储数据;第一磁性构件，具有设置为部分地包围每个第一布线的两端， 端部位于容易的磁化轴的方向上，以形成具有存储层的闭环磁路，以及具有两端的第二磁性构件，其设置为部分地包围每个第二布线，并且两端位于 磁化强度轴的方向，放大沿着硬磁化轴的方向施加到存储层的磁场。 第一磁性构件的每个端部被定位成比第二磁性构件的每个端部更靠近存储层。

    Method for producing magnetic memory device
    27.
    发明授权
    Method for producing magnetic memory device 有权
    磁存储器件的制造方法

    公开(公告)号：US07247506B2

    公开(公告)日：2007-07-24

    申请号：US11389281

    申请日：2006-03-27

    申请人： Minoru Amano ,  Tatsuya Kishi ,  Yoshiaki Saito ,  Tomomasa Ueda ,  Hiroaki Yoda

    发明人： Minoru Amano ,  Tatsuya Kishi ,  Yoshiaki Saito ,  Tomomasa Ueda ,  Hiroaki Yoda

    IPC分类号： H01L21/00

    CPC分类号： G11C11/15 ,  Y10T29/49021

    摘要： There is provided a magnetic memory device which has a small switching current for a writing line and which has a small variation therein. A method for producing such a magnetic memory device includes: forming a magnetoresistive effect element; forming a first insulating film so as to cover the magnetoresistive effect element; forming a coating film so as to cover the first insulating film; exposing a top face of the magnetoresistive effect element; forming an upper writing line on the magnetoresistive effect element; exposing the first insulating film on a side portion of the magnetoresistive effect element by removing a part or all of the coating film; and forming a yoke structural member so as to cover at least a side portion of the upper writing line and so as to contact the exposed first insulating film on the side portion of the magnetoresistive effect element.

    摘要翻译： 提供了一种对于写入线具有小的开关电流并且其变化小的磁存储器件。 一种制造这种磁存储器件的方法包括：形成磁阻效应元件; 形成第一绝缘膜以覆盖磁阻效应元件; 形成涂膜以覆盖第一绝缘膜; 暴露磁阻效应元件的顶面; 在磁阻效应元件上形成上部写入线; 通过去除一部分或全部涂膜，将第一绝缘膜暴露在磁阻效应元件的侧面上; 以及形成轭结构件，以便覆盖上部书写线的至少一个侧面部分，以便与该磁阻效应元件侧面上暴露的第一绝缘膜接触。

    Magnetic memory
    28.
    发明授权
    Magnetic memory 失效
    磁记忆

    公开(公告)号：US07023725B2

    公开(公告)日：2006-04-04

    申请号：US10864522

    申请日：2004-06-10

    申请人： Yoshiaki Saito ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Minoru Amano

    发明人： Yoshiaki Saito ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Minoru Amano

    IPC分类号： G11C7/00

    CPC分类号： G11C11/15

    摘要： There are provided at least one wire, a magnetoresistive effect element having a storage layer whose magnetization direction varies according to a current magnetic field generated by causing a current to flow in the wire, and first yokes provided so as to be spaced from at least one pair of opposed side faces of the magnetoresistive effect element to form a magnetic circuit in cooperation with the magnetoresistive effect element when a current is caused to flow in the wire. Each of the first yokes has at least two soft magnetic layers which are stacked via a non-magnetic layer.

    摘要翻译： 提供了至少一根导线，一个磁阻效应元件，其具有存储层，其磁化方向根据通过使电流在线中流动而产生的电流磁场而变化，并且第一磁轭设置成与至少一个 磁阻效应元件的一对相对的侧面，当电流在电线中流动时与磁阻效应元件协同地形成磁路。 每个第一轭具有至少两个通过非磁性层堆叠的软磁性层。

    Solid-state magnetic memory using ferromagnetic tunnel junctions
    29.
    发明授权
    Solid-state magnetic memory using ferromagnetic tunnel junctions 失效
    使用铁磁隧道结的固态磁存储器

    公开(公告)号：US06522573B2

    公开(公告)日：2003-02-18

    申请号：US09893612

    申请日：2001-06-29

    申请人： Yoshiaki Saito ,  Kentaro Nakajima ,  Minoru Amano

    发明人： Yoshiaki Saito ,  Kentaro Nakajima ,  Minoru Amano

    IPC分类号： G11C1100

    CPC分类号： H01L27/224 ,  B82Y10/00 ,  G11C11/15

    摘要： According to the present invention, there is provided a solid-state magnetic memory including a semiconductor substrate, a ferromagnetic tunnel junction element facing the semiconductor substrate, first and second wirings sandwiching the ferromagnetic tunnel junction elements from both sides thereof, a third wiring facing the ferromagnetic tunnel junction element, and a diode at least part of which is formed in a surface region of the semiconductor substrate.

    摘要翻译： 根据本发明，提供了一种包括半导体衬底，面向半导体衬底的铁磁隧道结元件的固态磁存储器，从其两侧将铁磁隧道结元件夹在中间的第一和第二配线，面向 铁磁隧道结元件，以及二极管，其至少一部分形成在半导体衬底的表面区域中。

    Method for producing magnetic memory device
    30.
    发明申请
    Method for producing magnetic memory device 有权

    公开(公告)号：US20060163196A1

    公开(公告)日：2006-07-27

    申请号：US11389281

    申请日：2006-03-27

    申请人： Minoru Amano ,  Tatsuya Kishi ,  Yoshiaki Saito ,  Tomomasa Ueda ,  Hiroaki Yoda

    发明人： Minoru Amano ,  Tatsuya Kishi ,  Yoshiaki Saito ,  Tomomasa Ueda ,  Hiroaki Yoda

    IPC分类号： B44C1/22 ,  G11B5/127 ,  C23F1/00 ,  H04R31/00

    CPC分类号： G11C11/15 ,  Y10T29/49021

    摘要： There is provided a magnetic memory device which has a small switching current for a writing line and which has a small variation therein. A method for producing such a magnetic memory device includes: forming a magnetoresistive effect element; forming a first insulating film so as to cover the magnetoresistive effect element; forming a coating film so as to cover the first insulating film; exposing a top face of the magnetoresistive effect element; forming an upper writing line on the magnetoresistive effect element; exposing the first insulating film on a side portion of the magnetoresistive effect element by removing a part or all of the coating film; and forming a yoke structural member so as to cover at least a side portion of the upper writing line and so as to contact the exposed first insulating film on the side portion of the magnetoresistive effect element.