摘要:
A method for manufacturing a resistive memory element includes providing a storage layer comprising a resistance changeable material, said resistance changeable material comprising carbon; providing contact layers for contacting the storage layer, wherein the storage layer is disposed between a bottom contact layer and a top contact layer; and doping the resistance changeable material with a dopant material.
摘要:
System and method for generating a Position Error Signal (PES) reference curve in data storage devices are provided. The method includes scanning a distance of at least one Track Pitch (TP) in a cross-track direction in each servo-burst along a predefined path. One or more TPs in each servo-burst are scanned with a read head. The method further includes, calculating a plurality of samples of each differential signal. A differential signal corresponds to a first read-back signal and a second read-back signal. Thereafter, a plurality of normalized signals are determined. A normalized signal is determined by dividing each sample of the differential signal with a normalization constant. The plurality of normalized signals are combined to generate the PES reference curve.
摘要:
A method for manufacturing a resistive memory element includes providing a storage layer comprising a resistance changeable material, said resistance changeable material comprising carbon; providing contact layers for contacting the storage layer, wherein the storage layer is disposed between a bottom contact layer and a top contact layer; and doping the resistance changeable material with a dopant material.
摘要:
A storage device including a storage medium for storing data in the form of marks in multiple tracks aligned along track center lines, at least one read transducer for writing and reading said data stored in said storage medium, and an actuator for moving said storage medium relative to said at least one read transducer. The storage device further includes stored servo sequences, which are replicated by use of at least two different types of servo marks displaced by a given unique distance in a cross track direction relative to a respective track centerline, wherein the storage device is operable to retrieve servo sequences using read-back signals obtained from at least two different types of servo marks.
摘要:
A storage device and a method for operating a storage device. A storage medium for storing data in form of marks is scanned by at least one probe in a scanning mode. A control unit provides a pulsed reading signal for data detecting purposes in said scanning mode. Said storage medium comprises marks for determining a clock of said pulsed signal.
摘要:
A method and a feedback controller for programming at least one multi-level phase-change memory cell with a programming signal. The method and feedback controller include a sequence of write pulses applied to the multi-level phase change memory cell, wherein the feedback controller adjusts in real time at least one parameter of each write pulse as a function of a determined resistance error of the phase-change memory cell with respect to a desired reference resistance level.
摘要:
The present invention relates to a controller comprising: at least two input terminals, each of which is configured to receive one of at least two input signals comprising information on a positioning of a scanner relative to a reference medium, and an output terminal, which is connectable to the scanner and configured to transmit an output signal, which is used for controlling the positioning of the scanner, wherein the controller further comprises: a processing unit being operable to designate a corresponding weighting function to each of the at least two input signals, a magnitude of the corresponding weighting function being selected to be in accordance with a noise profile of the input signal to which it has been designated; the processing unit further being operable to simultaneously use the at least two input signals, each with the corresponding weighting function designated thereto, to design a transfer function of the controller for use in the production of the output signal.
摘要:
One embodiment of the disclosure can provide a storage layer of a resistive memory element comprising a resistance changeable material. The resistance changeable material can include carbon. Contact layers can be provided for contacting the storage layer. The storage layer can be disposed between a bottom contact layer and a top contact layer. The resistance changeable material can be annealed at a predetermined temperature over a predetermined annealing time for rearranging an atomic order of the resistance changeable material.
摘要:
A method and device for performing a program operation of a phase change memory (PCM) cell. The method includes the steps of applying one or more programming pulses according to a predefined programming scheme to achieve a target resistance level of the PCM cell, wherein the programming scheme is operable to perform in a first programming mode one or more annealing steps to approach the target resistance, wherein the programming scheme is operable to perform in a second programming mode one or more melting steps, wherein the programming scheme is operable to start in the first programming mode and to switch to the second programming mode if the target resistance level of the PCM cell has been undershot in the first programming mode.
摘要:
The invention relates to a method of controlling movements of a positioner of a micro-scanner, the method comprising: determining the vibration resonance frequency ranges of the positioner, and performing a main scan by a controlled movement of the positioner.