Systems and methods for developer drain line monitoring

    公开(公告)号:US10809620B1

    公开(公告)日:2020-10-20

    申请号:US16543032

    申请日:2019-08-16

    Abstract: Various embodiments of systems and methods for drain line monitoring are disclosed herein. More specifically, a liquid dispense unit for a coating/developing processing system is provided herein for applying one or more liquid solutions to a substrate disposed within the liquid dispense unit. In the disclosed embodiments, a pH sensor and/or a line particle counter (LPC) is coupled to a drain line of the liquid dispense unit to monitor various parameters of the liquid waste, which is ejected from the substrate and disposed of through the drain line. In some embodiments, measurements obtained from the pH sensor may be used to optimize a develop process by detecting an endpoint of the develop process, avoiding pH shock and/or detecting excursions in the develop process. In some embodiments, measurements obtained from the LPC may additionally or alternatively be used to optimize the develop process.

    Photo-sensitized chemically amplified resist (PS-CAR) model calibration

    公开(公告)号:US10048594B2

    公开(公告)日:2018-08-14

    申请号:US15048619

    申请日:2016-02-19

    Abstract: Methods and systems for PS-CAR photoresist simulation are described. In an embodiment, a method includes calibrating initial conditions for a simulation of at least one process parameter of a lithography process using a radiation-sensitive material. In such an embodiment, the radiation-sensitive material includes a first light wavelength activation threshold that controls the generation of acid to a first acid concentration in the radiation-sensitive material and controls generation of photosensitizer molecules in the radiation-sensitive material, and a second light wavelength activation threshold that can excite the photosensitizer molecules in the radiation-sensitive material that results in the acid comprising a second acid concentration that is greater than the first acid concentration, the second light wavelength being different from the first light wavelength. Further, the method may include performing a lithography process using the previously-determined at least one process parameter.

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