公开(公告)号：US11430673B2

公开(公告)日：2022-08-30

申请号：US17230120

申请日：2021-04-14

Applicant: Tokyo Electron Limited

Inventor： Yusuke Hashimoto ,  Jiro Higashijima

IPC: H01L21/67 ,  B08B3/10 ,  B08B3/08 ,  G03F7/42

Abstract: A substrate processing apparatus includes at least one nozzle unit configured to eject a processing liquid to a substrate. The at least one nozzle unit includes a conductive part for voltage application configured to be brought into contact with the processing liquid, and a voltage detection part or a current detection part configured to be brought into contact with the processing liquid. A non-conductive part is interposed between the conductive part for voltage application and the voltage detection part or between the conductive part for voltage application and the current detection part. A voltage application part is connected to the conductive part for voltage application, and a voltage detector is installed in the voltage detection part or a current detector is installed in the current detection part.

公开(公告)号：US20180090306A1

公开(公告)日：2018-03-29

申请号：US15715227

申请日：2017-09-26

Applicant: Tokyo Electron Limited

Inventor： Jiro Higashijima ,  Nobuhiro Ogata ,  Yusuke Hashimoto

IPC: H01L21/02 ,  B05B15/12 ,  B05B12/10 ,  H01L21/67 ,  G03F7/42

CPC classification number: H01L21/0206 ,  B05B12/10 ,  B05B14/40 ,  G03F7/422 ,  G03F7/423 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/67248

Abstract: A substrate processing apparatus includes a processing liquid supply mechanism 70 configured to supply a SPM liquid to a substrate; a temperature adjusting unit (heater) 303 configured to adjust a temperature of the SPM liquid at a time when the SPM liquid is supplied to the substrate from the processing liquid supply mechanism 70; an acquisition unit (temperature sensor) 80 configured to acquire temperature information of the SPM liquid on a surface of the substrate; and a control unit 18 configured to set an adjustment amount of the temperature adjusting unit (heater) 303 based on the temperature information of the SPM liquid acquired by the acquisition unit (temperature sensor) 80. The temperature adjusting unit (heater) 303 adjusts, based on the adjustment amount set by the control unit 18, the temperature of the SPM liquid at the time when the SPM liquid is supplied to the substrate.

公开(公告)号：US20170361364A1

公开(公告)日：2017-12-21

申请号：US15624822

申请日：2017-06-16

Applicant: Tokyo Electron Limited

Inventor： Nobuhiro Ogata ,  Norihiro Ito ,  Jiro Higashijima ,  Yusuke Hashimoto ,  Kazuhiro Aiura

IPC: B08B13/00 ,  B08B3/04 ,  B08B3/08 ,  H01L21/67

CPC classification number: B08B13/00 ,  B08B3/041 ,  B08B3/08 ,  H01L21/67017 ,  H01L21/67051 ,  H01L21/67173

Abstract: According to the present disclosure, both first and second cup bodies are brought into a state of being close to each other by lifting one of the first and second cup bodies. A first gap between a gap forming portion formed on the lower surface of a first protruding portion and the upper surface of a second protruding portion is narrower than a second gap between a portion of the first protruding portion where the gap forming portion is absent, and the upper surface of the second protruding portion. In this state, a cleaning liquid is supplied to the second gap. Since movement of the cleaning liquid that tends to flow radially outward is restricted by the first narrow gap, the entire area between the first and second protruding portions may be filled with the cleaning liquid so that the surface to be cleaned may be evenly cleaned.

公开(公告)号：US09275881B2

公开(公告)日：2016-03-01

申请号：US13659996

申请日：2012-10-25

Applicant: Tokyo Electron Limited

Inventor： Shuichi Nagamine ,  Yusuke Hashimoto

IPC: B08B11/00 ,  H01L21/67 ,  H01L21/02

CPC classification number: H01L21/67051 ,  H01L21/02057 ,  H01L21/6715

Abstract: A liquid processing apparatus of the present disclosure includes a rotatable substrate holder that holds a wafer from above, and a top plate nozzle that supplies at least rinse liquid to the wafer and is provided in the rotation center of the substrate holder. The top plate nozzle is movably configured with the substrate holder in the top-bottom direction, and the rinse liquid is supplied to the wafer from the top plate nozzle while the top plate nozzle is spaced from the substrate holder. When the top plate nozzle approaches to the substrate holder, the rinse liquid is supplied to the lower surface of the substrate holder from the top plate nozzle to clean the lower surface of the substrate holder.

Abstract translation: 本公开的液体处理装置包括从上方保持晶片的可旋转衬底保持器和至少将冲洗液体提供给晶片并设置在衬底保持器的旋转中心中的顶板喷嘴。 顶板喷嘴在上下方向上可移动地配置有基板保持器，并且将冲洗液从顶板喷嘴供给到晶片，同时顶板喷嘴与基板保持器间隔开。 当顶板喷嘴靠近基板保持器时，冲洗液体从顶板喷嘴供给到基板保持器的下表面，以清洁基板保持器的下表面。