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    Vapor phase epitaxy apparatus of group III nitride semiconductor
    24.
    发明授权
    Vapor phase epitaxy apparatus of group III nitride semiconductor 有权
    III族氮化物半导体的气相外延装置

    公开(公告)号：US08679254B2

    公开(公告)日：2014-03-25

    申请号：US13014199

    申请日：2011-01-26

    申请人： Kenji Iso ,  Yoshiyasu Ishihama ,  Ryohei Takaki ,  Yuzuru Takahashi

    发明人： Kenji Iso ,  Yoshiyasu Ishihama ,  Ryohei Takaki ,  Yuzuru Takahashi

    IPC分类号： C23C16/455 ,  C23C16/46 ,  C23C16/458 ,  H01L21/306 ,  C23F1/00 ,  C23C16/06 ,  C23C16/22

    CPC分类号： C30B29/403 ,  C30B25/14

    摘要： [Problem] Provided is a vapor phase epitaxy apparatus of a group III nitride semiconductor including: a susceptor for holding a substrate; the opposite face of the susceptor; a heater for heating the substrate; a reactor formed of a gap between the susceptor and the opposite face of the susceptor; a raw material gas-introducing portion for supplying a raw material gases from the central portion of the reactor toward the peripheral portion of the reactor; and a reacted gas-discharging portion. Even when crystal growth is conducted on the surfaces of a large number of large-aperture substrates, the vapor phase epitaxy apparatus can eject each raw material gas at an equal flow rate for any angle, and can suppress the decomposition and crystallization of the raw material gases on the opposite face of the susceptor.[Solving Means] The vapor phase epitaxy apparatus is such that: the opposite face of the susceptor has means for flowing a coolant therein; the raw material gas-introducing portion has a plurality of gas ejection orifices formed of such a constitution that the gas ejection orifices are partitioned in a vertical direction with a disk-like partition; and at least one of the gas ejection orifices has such a constitution that the gas ejection orifice is partitioned in a circumferential direction with a plurality of columnar partitions.

    摘要翻译： [问题]提供一种III族氮化物半导体的气相外延装置，包括：用于保持基板的基座; 基座的相对面; 用于加热基板的加热器; 由基座和基座的相对面之间的间隙形成的反应器; 原料气体导入部，其将来自反应器的中央部的原料气体向反应器的周边部供给， 和反应气体排出部。 即使在大量的大孔径基板的表面上进行晶体生长的情况下，也可以使气相外延装置以相同的流量喷射任意角度的原料气体，能够抑制原料的分解，结晶化 在基座的相对面上的气体。 [解决方案]气相外延装置使得：基座的相对面具有用于使冷却剂流动的装置; 原料气体导入部具有多个气体喷出口，其形成为气体喷出孔沿着垂直方向与盘状隔壁分隔的结构， 并且气体喷射孔中的至少一个具有这样的结构，即气体喷射孔在圆周方向上与多个柱状隔板分隔开。

    Rolling bearing
    25.
    发明授权
    Rolling bearing 有权
    滚动轴承

    公开(公告)号：US08534920B2

    公开(公告)日：2013-09-17

    申请号：US12736592

    申请日：2009-04-22

    申请人： Tomoyuki Aida ,  Yuzuru Takahashi ,  Mikio Kuromatsu ,  Takeshi Iwawaki

    发明人： Tomoyuki Aida ,  Yuzuru Takahashi ,  Mikio Kuromatsu ,  Takeshi Iwawaki

    IPC分类号： F16C19/00 ,  F16C33/38

    CPC分类号： F16C33/3875 ,  F16C19/06 ,  F16C33/3806 ,  F16C33/414 ,  F16C33/6674 ,  F16C33/6681 ,  F16C33/7893 ,  F16C2226/74 ,  F16C2240/30 ,  F16C2240/46

    摘要： A rolling bearing includes an outer ring, an inner ring, balls and a cage. The cage includes an annular portion which is disposed at the end portion in the axial direction thereof, and a plurality of pillar portions which protrude to the coaxial direction from the side surface on the one side in the axial direction of the annular portion and are arranged in the circumferential direction thereof so as to form therebetween pockets each for housing a rolling element, wherein a seal gap for restricting the flowing of lubricant is formed between the first annular portion and one of or both the outer ring and the inner ring not guiding the cage.

    摘要翻译： 滚动轴承包括外圈，内圈，球和保持架。 保持架包括设置在其轴向端部的环形部分和从环形部分的轴向方向上的一侧的侧表面向同轴方向突出的多个柱部分，并且布置成 在其周向上形成用于容纳滚动元件的凹穴，其中用于限制润滑剂流动的密封间隙形成在第一环形部分和外环和内环中的一个或两个上，而不引导 笼。

    VAPOR PHASE EPITAXY APPARATUS OF GROUP III NITRIDE SEMICONDUCTOR
    26.
    发明申请
    VAPOR PHASE EPITAXY APPARATUS OF GROUP III NITRIDE SEMICONDUCTOR 审中-公开
    III类氮化物半导体的蒸气相外延装置

    公开(公告)号：US20100229794A1

    公开(公告)日：2010-09-16

    申请号：US12713237

    申请日：2010-02-26

    申请人： Kenji ISO ,  Yoshiyasu Ishihama ,  Ryohei Takaki ,  Yuzuru Takahashi

    发明人： Kenji ISO ,  Yoshiyasu Ishihama ,  Ryohei Takaki ,  Yuzuru Takahashi

    IPC分类号： C23C16/34

    CPC分类号： C23C16/303 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/52 ,  C30B25/02 ,  C30B29/403

    摘要： Provided is a vapor phase epitaxy apparatus for a III nitride semiconductor, including a susceptor for holding a substrate, an opposite face of the susceptor, a heater for heating the substrate, a raw material gas-introducing portion provided at the central portion of the susceptor, and a reactor formed of a gap between the susceptor and the opposite face of the susceptor, in which a distance between the installed substrate and the opposite face of the susceptor is extremely narrow, and a constitution through which a coolant is flown is provided for the opposite face of the susceptor. The vapor phase epitaxy apparatus further includes, on the opposite face of the susceptor, a fine porous portion for ejecting an inert gas toward the inside of the reactor and a constitution for supplying the inert gas to the fine porous portion. The vapor phase epitaxy apparatus for a III nitride semiconductor is capable of efficient, high-quality crystal growth even when a crystal is grown on the surface of each of many large-aperture substrates held by a susceptor having a large diameter or even when a substrate is heated at a temperature of 1000° C. or higher before a crystal is grown.

    摘要翻译： 提供了一种用于III族氮化物半导体的气相外延装置，包括用于保持基板的基座，基座的相对面，用于加热基板的加热器，设置在基座的中心部分的原料气体导入部 以及由基座和基座的相对面之间的间隙形成的反应器，其中安装的基板与基座的相对面之间的距离非常窄，并且提供了冷却剂流过的构造，用于 基座的相对面。 气相外延装置还包括在基座的相对面上的用于向反应器内部喷射惰性气体的细孔部分和用于向惰性气体供应微细多孔部分的构造。 即使当晶体生长在由具有大直径的基座保持的许多大孔径基板的每一个的表面上或者甚至当基板上的晶体生长时，用于III族氮化物半导体的气相外延装置也能够有效地，高质量的晶体生长 在晶体生长之前在1000℃以上的温度下加热。