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48 条记录 (耗时 0.024 秒)

    Wafer-like processing after sawing DMDs
    21.
    发明授权
    Wafer-like processing after sawing DMDs 失效
    锯切DMD后的晶圆状加工

    公开(公告)号：US5622900A

    公开(公告)日：1997-04-22

    申请号：US374384

    申请日：1995-01-12

    申请人： Gregory C. Smith

    发明人： Gregory C. Smith

    IPC分类号： G02B26/08 ,  H01L21/301 ,  H01L21/302

    CPC分类号： G02B26/08 ,  G02B26/0841 ,  Y10T156/1082

    摘要： A method of fabricating debris intolerant devices 30, and especially micro-mechanical devices such as DMDs, that allows wafers 22 to be sawn prior to completing all fabrication steps. Some devices are too fragile to allow cleaning operations to be performed after fabrication of the device. A solution is to saw and clean the wafers prior to completing the fabrication steps that make the device fragile. To prevent having to process the chips 30 individually, a substrate wafer 28 is attached to the backside of the dicing tape 24. This substrate wafer holds the sawn chips 30 in alignment allowing the remaining fabrication steps to be performed in wafer form.

    摘要翻译： 制造碎片不耐受装置30，特别是诸如DMD的微机械装置的方法，其允许在完成所有制造步骤之前锯切晶片22。 一些设备太脆弱，不允许在制造设备之后进行清洁操作。 解决方案是在完成使器件易碎的制造步骤之前锯切和清洁晶片。 为了防止必须单独处理芯片30，将衬底晶片28附接到切割带24的背面。该衬底晶片将锯切芯片30保持对准，从而可以以晶片形式执行剩余的制造步骤。

    Method of forming composite interconnect system
    22.
    发明授权
    Method of forming composite interconnect system 失效
    形成复合互连系统的方法

    公开(公告)号：US5231055A

    公开(公告)日：1993-07-27

    申请号：US888777

    申请日：1992-05-26

    申请人： Gregory C. Smith

    发明人： Gregory C. Smith

    IPC分类号： H01L21/768 ,  H01L23/522

    CPC分类号： H01L23/5226 ,  H01L21/76879 ,  H01L2924/0002 ,  Y10S148/025

    摘要： A process for forming a smooth conformal refractory metal film on an insulating layer having a via formed therein. This process provides extremely good planarity and step coverage when used to form contacts in semiconductor circuits and, in addition, offers improved wafer alignment capability as well as enhanced reliability which result from the smooth surface morphology. The process includes forming contact openings through an insulating layer to a semiconductor substrate; depositing a first blanket layer of titanium using deposition conditions that provide a conformal film that exhibits good step coverage at the contact opening; and forming a second blanket layer of titanium using deposition conditions that provide reduced surface asperity height. The process is ideally suited to forming an electrical interconnection system for semiconductor integrated circuit devices such as static or dynamic random access memories and is particularly useful in VLSI devices that incorporate multiple levels of interconnect.

    摘要翻译： 在其中形成有通孔的绝缘层上形成平滑的保形难熔金属膜的方法。 当用于在半导体电路中形成接触时，该工艺提供了非常好的平面度和阶梯覆盖，并且还提供了改进的晶片对准能力以及由光滑的表面形态产生的增强的可靠性。 该工艺包括通过绝缘层形成接触开口到半导体衬底; 使用提供在接触开口处表现出良好的阶梯覆盖的保形膜的沉积条件沉积钛的第一覆盖层; 以及使用提供降低的表面粗糙度高度的沉积条件形成第二层钛层。 该方法非常适用于形成诸如静态或动态随机存取存储器的半导体集成电路器件的电互连系统，并且在并入多级互连的VLSI器件中特别有用。

    SYSTEMS AND METHODS FOR CONTROLLING THE EFFECTIVE DIELECTRIC CONSTANT OF MATERIALS USED IN A SEMICONDUCTOR DEVICE
    25.
    发明申请
    SYSTEMS AND METHODS FOR CONTROLLING THE EFFECTIVE DIELECTRIC CONSTANT OF MATERIALS USED IN A SEMICONDUCTOR DEVICE 失效
    用于控制在半导体器件中使用的材料的有效介电常数的系统和方法

    公开(公告)号：US20080299779A1

    公开(公告)日：2008-12-04

    申请号：US11754845

    申请日：2007-05-29

    申请人： Gregory C. Smith

    发明人： Gregory C. Smith

    IPC分类号： H01L21/31

    CPC分类号： H01L21/7682 ,  H01L21/76834

    摘要： Systems and methods for controlling the effective dielectric constant of materials used in a semiconductor device are shown and described. In one embodiment, a method comprises providing a semiconductor substrate with a plurality of pillars formed thereon, depositing a first layer of dielectric material over a plurality of pillars, removing a portion of the first layer deposited over the plurality of pillars, and depositing a second layer of dielectric material over the plurality of pillars, where the second layer leaves a plurality of voids between the plurality of pillars.

    摘要翻译： 显示和描述了用于控制半导体器件中使用的材料的有效介电常数的系统和方法。 在一个实施例中，一种方法包括提供半导体衬底，其上形成有多个柱，在多个柱上沉积介电材料的第一层，去除沉积在多个柱上的第一层的一部分，以及沉积第二层 电介质材料层在多个柱上，其中第二层在多个柱之间留下多个空隙。

    Filter with thermal vent
    26.
    发明授权
    Filter with thermal vent 失效
    用散热孔过滤

    公开(公告)号：US07371268B2

    公开(公告)日：2008-05-13

    申请号：US10830738

    申请日：2004-04-23

    申请人： Gregory C. Smith

    发明人： Gregory C. Smith

    IPC分类号： B01D47/00

    CPC分类号： B01D46/003 ,  B01D46/2414

    摘要： A compressed air filtering cartridge includes a housing and a filter in the housing, the filter having a thermal vent. In one embodiment the filter includes a wall portion having a first condition when below a predetermined temperature range in which the wall portion blocks flow of air between opposite sides of the wall portion. The wall portion has a second condition when above the predetermined temperature range in which the wall portion does not block flow of air between opposite sides of the wall portion. The cartridge may be part of a compressed air system, between a compressor and an air dryer.

    摘要翻译： 压缩空气过滤筒包括壳体和壳体中的过滤器，过滤器具有热通风口。 在一个实施例中，过滤器包括具有第一条件的壁部分，该壁部分低于预定温度范围，其中壁部分阻止壁部相对侧之间的空气流动。 当壁部不阻挡壁部相对侧之间的空气流动的预定温度范围时，壁部具有第二状态。 墨盒可以是压缩空气系统的一部分，在压缩机和空气干燥器之间。

    Oil separator for vehicle air system
    27.
    发明授权
    Oil separator for vehicle air system 有权
    车用空气系统油分离器

    公开(公告)号：US07285149B2

    公开(公告)日：2007-10-23

    申请号：US10698571

    申请日：2003-10-31

    申请人： William P. Fornof ,  Gregory R. Ashley ,  Leonard A. Quinn ,  Fred W. Hoffman ,  Gregory C. Smith

    发明人： William P. Fornof ,  Gregory R. Ashley ,  Leonard A. Quinn ,  Fred W. Hoffman ,  Gregory C. Smith

    IPC分类号： F02M25/06

    CPC分类号： B60T17/004 ,  F16N39/002 ,  Y10S55/19

    摘要： An oil separator for use in a vehicle air system includes a recycling valve for removing coalesced oil. The recycling valve may include a piston movable in a cylinder in response to a control air pressure to open the recycling valve and thus drain coalesced oil from a sump under the influence of residual air pressure in the sump. The separator may include a fixture for mounting the separator to a vehicle, including a plurality of ports extending from an inlet port for directing air into the cartridge with a combined flow area at least equal to the flow area of the inlet port. The plurality of ports preferably extend at a right angle to the direction of flow of air through the inlet port. A safety relief valve on the separator releases air when the pressure exceeds a predetermined pressure.

    摘要翻译： 用于车辆空气系统的油分离器包括用于除去聚结的油的再循环阀。 回收阀可以包括可响应于控制空气压力而在气缸中移动的活塞，以打开再循环阀，从而在贮槽中的残余空气压力的影响下从贮槽排出合并的油。 分离器可以包括用于将分离器安装到车辆的固定装置，包括从用于将空气引导到筒中的入口端口延伸的多个端口，其具有至少等于入口端口的流动面积的组合流动面积。 多个端口优选地与通过入口的空气流动方向成直角地延伸。 当压力超过预定压力时，分离器上的安全释放阀释放空气。

    Arrow fletching system and method for attaching arrow fletching system to an arrow shaft
    29.
    发明授权
    Arrow fletching system and method for attaching arrow fletching system to an arrow shaft 有权
    箭头快速切割系统和将箭头快速切割系统附接到箭头轴的方法

    公开(公告)号：US07074143B2

    公开(公告)日：2006-07-11

    申请号：US10894479

    申请日：2004-07-20

    申请人： Michael M. Czemske ,  Gregory C. Smith

    发明人： Michael M. Czemske ,  Gregory C. Smith

    IPC分类号： F42B6/06

    CPC分类号： F42B6/06

    摘要： A fletching system including a sleeve positionable about an outer surface of an arrow shaft and at least one archery vane mounted to an outer surface of the sleeve. The sleeve has an initial inner diameter greater than an outer diameter of the arrow shaft and the sleeve is shrinkable to secure the fletching system to the arrow shaft. Methods for constructing a fletching system include mounting a shrinkable sleeve and at least one archery vane on an outer surface of the shrinkable sleeve and also attaching the fletching system with respect to an archery arrow.

    摘要翻译： 一种热熔系统，包括可围绕箭头轴的外表面定位的套筒和安装到套筒的外表面的至少一个射箭叶片。 套筒具有大于箭头轴的外径的初始内径，并且套筒是可收缩的，以将定影系统固定到箭头轴。 用于构造快速切割系统的方法包括将可收缩套管和至少一个射箭叶片安装在可收缩套筒的外表面上，并且还相对于射箭箭头附接弗莱切特系统。

    Planarized selective tungsten metallization system
    30.
    再颁专利
    Planarized selective tungsten metallization system 失效
    平面选择性钨金属化系统

    公开(公告)号：USRE36663E

    公开(公告)日：2000-04-18

    申请号：US473812

    申请日：1995-06-07

    申请人： Gregory C. Smith ,  Thomas D. Bonifield

    发明人： Gregory C. Smith ,  Thomas D. Bonifield

    IPC分类号： H01L21/3205 ,  H01L21/768 ,  H01L21/00 ,  H01L21/02 ,  H01L21/283 ,  H01L21/90

    CPC分类号： H01L21/32051 ,  H01L21/76801 ,  H01L21/76816 ,  H01L21/76829 ,  H01L21/76879 ,  H01L21/76807

    摘要： In an improved selection tungsten metallization system, a plurality of orifices (20) are cut into a first level dielectric layer (18). A nucleation layer (52), preferably Ti-W alloy, is then formed in each orifice (20) and on the outer surface of the first dielectric layer (18) in a second-level metallization pattern. A second dielectric layer (30) is deposited over the first dielectric layer (18) and the nucleation layer (52), and a reverse second level metallization pattern is used to etch slots (58) back down to the nucleation layers (52) and into orifices (20). Thereafter, tungsten is deposited by selective CVD to fill the first level orifices (20) and the second level slots (58) until the upper surfaces (62) of the tungsten conductors (60) are substantially coplanar with the upper surface (38) of the second dielectric layer (30).

    摘要翻译： 在改进的选择钨金属化系统中，将多个孔（20）切割成第一级介电层（18）。 然后在每个孔口（20）中以第二级金属化图案形成第一介电层（18）的外表面上的成核层（52），优选Ti-W合金。 沉积在第一介电层（18）和成核层（52）上的第二介电层（30），并且使用反向第二级金属化图案来蚀刻回到成核层（52）的槽（58）和 进入孔（20）。 此后，通过选择性CVD沉积钨以填充第一级孔（20）和第二级槽（58），直到钨导体（60）的上表面（62）与上表面（38）的上表面（38）基本共面 第二电介质层（30）。