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21.发明授权2'-alkylidenepyrimidine nucleoside derivatives, process for production thereof, and uses thereof 失效2'-亚基亚嘧啶核苷衍生物，其制备方法及其用途
公开(公告)号：US5430139A
公开(公告)日：1995-07-04
申请号：US125839
申请日：1993-09-24
申请人： Akira Matsuda , Tohru Ueda , Kenji Takenuki , Haruhiko Machida
发明人： Akira Matsuda , Tohru Ueda , Kenji Takenuki , Haruhiko Machida
IPC分类号： C07H19/06
摘要： Disclosed are novel 2'-alkylidenepyrimidine nucleoside derivatives represented by formula [I]: ##STR1## R.sup.1 is an amino group or a hydroxy group, R.sup.2 is a hydrogen atom, a halogen atom or a lower alkyl group, R.sup.3 is a hydrogen atom or a lower alkyl group, and R.sup.4 is a hydrogen atom or a phosphate residue, or salts thereof. These novel compounds can be produced from uridine or cytidine derivatives by alkylidenating the 2'-position in the sugar moiety thereof with Wittig's reagent. Furthermore, the compounds have remarkable antiviral activities and therefore can provide novel antiviral agents.
摘要翻译： 公开了由式[I]表示的新的2'-亚烷基嘧啶核苷衍生物：其中R 1为氨基或羟基，R 2为氢原子，卤素原子或低级烷基，R 3为 氢原子或低级烷基，R4为氢原子或磷酸酯残基，或其盐。 这些新化合物可以由尿苷或胞苷衍生物通过用Wittig's试剂将其部分上的2'-位进行亚烷基化来制备。 此外，化合物具有显着的抗病毒活性，因此可以提供新的抗病毒剂。
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公开(公告)号：US5395804A
公开(公告)日：1995-03-07
申请号：US38277
申请日：1993-03-29
申请人： Tohru Ueda
发明人： Tohru Ueda
IPC分类号： H01L29/78 , H01L21/20 , H01L21/336 , H01L29/786 , H01L21/469
CPC分类号： H01L29/66757 , H01L21/2022 , H01L29/66765 , Y10S438/909
摘要： A method for fabricating a thin film transistor formed on an insulator is disclosed. The method includes the steps of forming a non-single crystal silicon film on the insulator, forming a polysilicon film on the insulator by thermally treating the non-single crystal silicon film in an atmosphere of a gas including hydrogen halogenide, and forming a channel region in the polysilicon film.
摘要翻译： 公开了一种用于制造形成在绝缘体上的薄膜晶体管的方法。 该方法包括以下步骤：在绝缘体上形成非单晶硅膜，通过在包含卤化氢的气体气氛中对非单晶硅膜进行热处理，在绝缘体上形成多晶硅膜，形成沟道区 在多晶硅膜中。
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公开(公告)号：US5368915A
公开(公告)日：1994-11-29
申请号：US836404
申请日：1992-02-18
申请人： Tohru Ueda
发明人： Tohru Ueda
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , H01B3/12 , H01L21/02 , H01L21/336 , H01L27/12 , H01L29/49 , H01L29/78 , H01L29/786
CPC分类号： H01L28/55 , G02F1/136213 , H01B3/12 , H01L29/4908 , Y10T428/24917 , Y10T428/24926
摘要： An active matrix substrate comprising storage capacitors each having an insulating film formed of a single perovskite oxide or a solid solution composed of a plurality of the perovskite oxides. Since the perovskite oxide has a significantly high relative dielectric constant, the area of storage capacitor can be reduced while keeping or increasing the capacitance thereof. Further, the insulating film can be thickened as far as the insulation property thereof is not affected without the capacitance thereof being reduced, thereby preventing leakage current.
摘要翻译： 一种有源矩阵基板，包括各自具有由单一钙钛矿氧化物形成的绝缘膜或由多个钙钛矿氧化物构成的固溶体的存储电容器。 由于钙钛矿氧化物具有显着高的相对介电常数，所以可以在保持或增加其电容的同时减小存储电容器的面积。 此外，绝缘膜可以变厚，只要其绝缘性能不受影响而不降低其电容，从而防止漏电流。
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24.发明授权2'-alkylidenepyrimidine nucleoside compounds and a process for production of same 失效2'-亚苄基嘧啶核苷化合物及其制备方法
公开(公告)号：US5300636A
公开(公告)日：1994-04-05
申请号：US721828
申请日：1991-06-26
申请人： Akira Matsuda , Tohru Ueda , Kenji Takenuki , Haruhiko Machida
发明人： Akira Matsuda , Tohru Ueda , Kenji Takenuki , Haruhiko Machida
IPC分类号： C07H19/06
摘要： Disclosed are novel 2'-alkylidenepyrimidine nucleoside derivatives represented by formula [I]: ##STR1## wherein R.sup.1 is an amino group or a hydroxy group, R.sup.2 is a hydrogen atom, a halogen atom or a lower alkyl group, R.sup.3 is a hydrogen atom or a lower alkyl group, and R.sup.4 is a hydrogen atom or a phosphate residue, or salts thereof.These novel compounds can be produced from uridine or cytidine derivatives by alkylidenating the 2'-position in the sugar moiety thereof with Wittig's reagent.Furthermore, the compounds have remarkable antiviral activities and therefore can provide novel antiviral agents.
摘要翻译： 公开了由式[I]表示的新颖的2'-亚烷基嘧啶核苷衍生物：其中R1是氨基或羟基，R2是氢原子，卤素原子或低级烷基，R3是 氢原子或低级烷基，R 4为氢原子或磷酸酯残基，或其盐。 这些新化合物可以由尿苷或胞苷衍生物通过用Wittig's试剂将其部分上的2'-位进行亚烷基化来制备。 此外，化合物具有显着的抗病毒活性，因此可以提供新的抗病毒剂。
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公开(公告)号：US20070092174A1
公开(公告)日：2007-04-26
申请号：US10561020
申请日：2004-11-12
申请人： Kouji Ueda , Tohru Ueda
发明人： Kouji Ueda , Tohru Ueda
IPC分类号： F16C23/08
CPC分类号： F16C23/086 , F16C19/38 , F16C33/585 , F16C33/64 , F16C2240/42 , F16C2240/54
摘要： A roughness of an outer ring raceway surface 14 formed on an inner peripheral surface of an outer ring 13 is made larger than a roughness of inner ring raceway surfaces 12a, 12b of an inner ring 11. Also, an average roughness Ra of the outer ring raceway surface 14 is set within 0.1 μm≦Ra≦0.5 μm in an axial direction and a circumferential direction in ranges of b1/(B/2)≦0.9, b2/ (B/2)≦0.9 and in a measured length of 0.1 mm to 1.0 mm where B is a width of the outer ring 13 and b1, b2 are a distance from both end surfaces of the outer ring 13 in the axial direction respectively. A roughness parameter S of the outer ring raceway surface is set within 0
摘要翻译： 形成在外圈13的内周面上的外圈滚道面14的粗糙度比内圈11的内圈滚道面12a，12b的粗糙度大。 此外，外圈滚道面14的平均粗糙度Ra在b <1 /（B / 2）的范围内在轴向和圆周方向上设定在0.1μm以下，Ra <=0.5μm ）<= 0.9，B 2 /（B / 2）<= 0.9，测量长度为0.1mm至1.0mm，其中B是外环13的宽度，b 1 b 2分别是从外圈13的轴向两端面的距离。 外圈滚道面的粗糙度参数S设定在0
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26.发明授权Liquid crystal display device with side light shielding layers and method for producing the same 失效具有侧光屏蔽层的液晶显示装置及其制造方法公开(公告)号：US07075594B2
公开(公告)日：2006-07-11
申请号：US10614243
申请日：2003-07-08
申请人： Tohru Ueda , Kazuhiko Inoguchi , Yoshinori Higami
发明人： Tohru Ueda , Kazuhiko Inoguchi , Yoshinori Higami
IPC分类号： G02F1/136
CPC分类号： H01L29/78633 , G02F1/136209
摘要： A liquid crystal display device includes an active matrix substrate; a counter substrate; and a liquid crystal layer interposed between the active matrix substrate and the counter substrate. The active matrix substrate includes a plate; a thin film transistor provided on the plate; and a side light shielding layer for covering at least a portion of a side surface of the thin film transistor.
摘要翻译： 液晶显示装置包括有源矩阵基板; 相对基板; 以及插入在有源矩阵基板和对置基板之间的液晶层。 有源矩阵基板包括板; 设置在所述板上的薄膜晶体管; 以及用于覆盖薄膜晶体管的侧表面的至少一部分的侧光屏蔽层。
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27.发明授权Substrate with a flattening film, display substrate, and method of manufacturing the substrates 有权具有平坦化膜，显示基板的基板和制造基板的方法公开(公告)号：US06894754B2
公开(公告)日：2005-05-17
申请号：US10370461
申请日：2003-02-24
申请人： Tohru Ueda
发明人： Tohru Ueda
IPC分类号： G02F1/1333 , G02F1/1362 , G09F9/30 , H01L21/304 , H01L21/316 , H01L21/3205 , H01L21/336 , H01L29/786 , G02F1/13
CPC分类号： G02F1/136227 , G02F1/136209 , G02F2001/133357
摘要： The invention involves: the forming of a dummy pattern for planarization between convex portions (for example, between lead electrodes and a signal wire pattern) of irregularities caused by a patterned layer on a surface on which at least one interlayer insulating film is formed, so as to be separated by a predetermined distance from the convex portions; the forming of interlayer insulating films 7a-7d so as to fill up gaps between the dummy pattern and the convex portions; and the planarizing of a surface. Thereby, the invention is capable of relaxing requirements on uniformity in the thickness of the film to be polished and the thickness of the polished portion.
摘要翻译： 本发明涉及：在形成有至少一个层间绝缘膜的表面上由图案化层引起的凹凸的凸部（例如引线电极和信号线图案）之间形成用于平坦化的虚拟图案，因此 与凸部隔开预定的距离; 形成层间绝缘膜7a--7d以填充虚设图案和凸部之间的间隙; 和表面的平面化。 因此，本发明能够缓和要抛光的膜的厚度和抛光部分的厚度的均匀性的要求。
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公开(公告)号：US20050073620A1
公开(公告)日：2005-04-07
申请号：US10892782
申请日：2004-07-16
申请人： Masahito Gotoh , Tohru Ueda
发明人： Masahito Gotoh , Tohru Ueda
IPC分类号： G02F1/1335 , G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L29/786
CPC分类号： G02F1/136213
摘要： An active matrix substrate of the present invention has a substrate, a thin-film transistor and a capacitive element provided on the principal plane of the substrate, and a scanning line for supplying a scanning signal to the thin-film transistor, in which the thin-film transistor has a semiconductor layer including a channel region and a gate electrode formed on the semiconductor layer. The capacitive element is located at a position opposite to the substrate at the both sides of the thin-film transistor. The scanning line is formed by a conductive layer different from the gate electrode and located at a position closer to the substrate than the semiconductor layer.
摘要翻译： 本发明的有源矩阵基板具有设置在基板的主面上的基板，薄膜晶体管和电容元件，以及用于向薄膜晶体管提供扫描信号的扫描线，其中薄型 薄膜晶体管具有包括形成在半导体层上的沟道区和栅电极的半导体层。 电容元件位于与薄膜晶体管两侧的基板相对的位置。 扫描线由与栅电极不同的导电层形成，位于比半导体层更靠近基板的位置。
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公开(公告)号：US06714266B1
公开(公告)日：2004-03-30
申请号：US09631964
申请日：2000-08-03
申请人： Tohru Ueda , Yoshinori Higami
发明人： Tohru Ueda , Yoshinori Higami
IPC分类号： G02F11343
CPC分类号： G02F1/1368 , G02F1/136209
摘要： In a transmission type liquid crystal display device, a semiconductor thin film is formed for each pixel below a signal wiring, a gate wiring, an auxiliary capacitance wiring and a lead electrode which are made of a light shading material via an insulating film. A region that belongs to the semiconductor thin film and is located below the signal wiring and below the gate wiring is made to serve as a channel region of a TFT. Regions that belong to the semiconductor thin film and are located on both sides of the channel region below the signal wiring are made to serve as a source region and a drain region of the TFT, respectively. Further, a region that belongs to the semiconductor thin film and is located below the auxiliary capacitance wiring is made to serve as an auxiliary capacitance electrode region. The TFT is effectively shaded without impairing the opening ratio of the transmission type liquid crystal display device with a simple construction, and the transmission type liquid crystal display device is fabricated with a high yield at low cost through a short process.
摘要翻译： 在透射型液晶显示装置中，通过绝缘膜由遮光材料制成的信号布线，栅极布线，辅助电容布线和引线电极以下的每个像素形成半导体薄膜。 属于半导体薄膜并且位于信号布线下方和栅极布线下方的区域被用作TFT的沟道区域。 分别属于半导体薄膜并位于信号线下方的沟道区两侧的区域用作TFT的源极区域和漏极区域。 此外，使属于半导体薄膜并且位于辅助电容布线下方的区域用作辅助电容电极区域。 通过简单的结构，不会损害透射型液晶显示装置的开口率，有效地遮蔽TFT，透射型液晶显示装置通过短时间以低成本制造。
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30.发明授权Liquid crystal display device with capacitor in contact hole, and fabrication method for the same 有权具有接触孔电容器的液晶显示装置及其制造方法公开(公告)号：US06493046B1
公开(公告)日：2002-12-10
申请号：US09604676
申请日：2000-06-27
申请人： Tohru Ueda
发明人： Tohru Ueda
IPC分类号： G02F11343
CPC分类号： G02F1/136227 , G02F1/136209 , G02F1/136213
摘要： A liquid crystal display device provided with an insulating substrate, a thin film transistor formed on the insulating substrate, and a pixel electrode and a storage capacitor electrically connected to the thin film transistor, includes a first conductive layer formed on the insulating substrate; a first insulating layer formed on the first conductive layer and having an opening for exposing a part of the first conductive layer; a second conductive layer formed on the first conductive layer at least within the opening; a second insulating layer for covering the second conductive layer; and a third conductive layer for covering the second insulating layer at least within the opening, and the storage capacitor is formed from a stacked layer structure including the second conductive layer, the second insulating layer and the third conductive layer.
摘要翻译： 具有绝缘基板的液晶显示装置，形成在所述绝缘基板上的薄膜晶体管，和与所述薄膜晶体管电连接的像素电极和保持电容器，具有形成在所述绝缘基板上的第一导电层; 第一绝缘层，形成在所述第一导电层上并具有用于暴露所述第一导电层的一部分的开口; 至少在所述开口内形成在所述第一导电层上的第二导电层; 用于覆盖第二导电层的第二绝缘层; 以及第三导电层，用于至少在开口内覆盖第二绝缘层，并且存储电容器由包括第二导电层，第二绝缘层和第三导电层的层叠结构形成。
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