摘要:
An integrated memory contains two normal read amplifiers and two first redundant read amplifiers. It also contains bit lines which are combined into at least two individually addressable normal columns, at least one of which from each normal column is connected to one of the normal read amplifiers. It also has first redundant bit lines which are combined into one individually addressable redundant column, at least one of which is connected to one of the redundant read amplifiers. The first redundant read amplifier and its redundant columns are provided for replacing the two normal read amplifiers and one of the normal columns.
摘要:
An integrated memory has two first switching elements, which respectively connect a bit line of a first bit line pair to a bit line of a second bit line pair. In addition, the integrated memory has two second switching elements, which respectively connect one of the reference cells of one bit line pair to that bit line of the other bit line pair which is not connected via the corresponding first switching element to the bit line assigned to this reference cell. Information is written back to the reference cells via the sense amplifiers. A method of operating the integrated memory is also provided.
摘要:
The integrated memory has m>1 bit lines that are connected to an input of a read-write amplifier via a switching element. Only one switching element is conductively connected for each read or write access. The memory is provided with a switching unit that influences read or write access occurring by way of the read-write amplifier and bit lines. The circuit unit is provided with an activation input. A column-end decoder has a first decoder stage and m second decoder stages. The outputs of the second decoder stages are connected to a control input for each of the switching elements. The output of the first decoder stage is connected to the activation input of the switching unit.
摘要:
An integrated semiconductor memory has memory cells that are combined to form addressable normal units and to form at least one redundant unit for replacing one of the normal units. In addition, the semiconductor memory has an address bus to which an address can be applied, and a redundancy circuit that is connected to the address bus. The redundancy circuit is used to select the redundant unit. An input of a processing unit is connected to a connection of the address bus and also to a connection for a test signal, and the output of the processing unit is connected to an input of the redundancy circuit. The redundant unit can be tested before the repair information is programmed in the redundancy circuit. The circuit complexity required for this is comparatively low.
摘要:
A device for the manufacture of an absorbent product including a rotatable slitting tool having an extent in a radial direction and an extent in an axial direction perpendicular to the radial direction, the slitting tool being divided in the axial direction into two lateral parts and lying between them a central part. The central part has a circular cross section in the radial direction, and the lateral parts include, in the axial direction, intermittent protuberances projecting from the central part. The protuberances are the same distance from the center of the slitting tool as the circular cross section. The central part between the protuberances, in the direction of curvature of the envelope surface, forms a plurality of cutting edges, each of which has a width which, at a given pressure, permits slitting of a layer of material intended for the absorbent product, and the protuberances form supporting surfaces between the cutting edges.
摘要:
A leak detector includes an inlet, a high-vacuum pump, and a test gas detector, which is connected to the entry of the high-vacuum pump. A backing pump is connected to an outlet area of the high-vacuum pump, and a test gas line extends between the inlet of the leak detector and the backing pump, the test gas line being connected to the outlet area of the high-vacuum pump via a line section. In order to shorten the response time of the leak detector, the line and the backing pump are connected via separate connections to the outlet area of the high-vacuum pump.
摘要:
Molding compositions made from a high-molecular-weight propylene polymer with a melt mass-flow rate MFR of from 0.3 to 1 g/10 min, to ISO 1133 at 230° C. and 5 kg, and with a proportion of β modification crystallites in the range from 2 to 20% by weight. The molding compositions of the invention preferably comprise a quinarcidone pigment as nucleating agent. The high-molecular-weight propylene polymer used preferably comprises a high-molecular-weight propylene copolymer with up to 30% by weight of other copolymerized olefins having up to 10 carbon atoms. One of the uses of the molding compositions of the invention is as materials for pipes.
摘要:
A sniffing leak detector includes a handpiece, supporting a sniffing tip, the detector further including a gas sensor. To promote longer life and obtaining more accurate results, the leak detector is equipped with an acceleration sensor for recording the movements of the handpiece.
摘要:
The invention relates to an infrared gas analyser (1), especially for use as a gas detector for leak detection using a sampling probe. Said gas analyser comprises a vessel (test vessel 2), through which a test gas flows, and an infrared light source (4, 5, 42) which produces an infrared light that shines through the test vessel (2). The analyser further encompasses a detector (35) that facilitates measurement of the infrared light absorption in the test gas. The aim of the invention is to provide at low costs an analyser that is apt for every day use. To this end, a reference vessel (3) through which a reference gas flows is provided in addition to the test vessel (2) through which the test gas flows. A reference gas is sucked from the environment of the test gas suction area. The same or an additional light source (4, 5, 42) and the same detector (35) are allocated to said reference vessel. The analyser is provided with means (38, 41) that effect a modulation of the infrared light shining through the vessel (2, 3). Means (36) are provided which produce the measured values and which allow that the background signals obtained by the infrared absorption in the gas of the reference vessel (3) are taken into consideration for the signals obtained by measuring the infrared absorption in the test vessel.