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    WAFER CARRIER HAVING THERMAL UNIFORMITY-ENHANCING FEATURES
    23.
    发明申请
    WAFER CARRIER HAVING THERMAL UNIFORMITY-ENHANCING FEATURES 审中-公开
    具有热均质增强特性的散热器

    公开(公告)号：US20140360430A1

    公开(公告)日：2014-12-11

    申请号：US14297244

    申请日：2014-06-05

    Applicant: Veeco Instruments, Inc.

    Inventor： Eric Armour ,  Sandeep Krishnan ,  Alex Zhang ,  Bojan Mitrovic ,  Alexander Gurary

    IPC: C30B25/10 ,  C30B25/12

    CPC classification number: C30B25/12 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/46 ,  C30B25/105 ,  Y10T29/49826

    Abstract: A wafer carrier assembly for use in a system for growing epitaxial layers on one or more wafers by chemical vapor deposition (CVD), the wafer carrier assembly includes a wafer carrier body formed symmetrically about a central axis, and including a generally planar top surface that is situated perpendicularly to the central axis and a planar bottom surface that is parallel to the top surface. At least one wafer retention pocket is recessed in the wafer carrier body from the top surface. Each of the at least one wafer retention pocket includes a floor surface and a peripheral wall surface that surrounds the floor surface and defines a periphery of that wafer retention pocket. At least one thermal control feature includes an interior cavity or void formed in the wafer carrier body and is defined by interior surfaces of the wafer carrier body.

    Abstract translation: 一种用于通过化学气相沉积（CVD）在一个或多个晶片上生长外延层的系统的晶片载体组件，晶片载体组件包括围绕中心轴线对称地形成的晶片载体主体，并且包括大致平坦的顶表面， 垂直于中心轴定位，平面底面平行于顶面。 至少一个晶片保留袋从顶表面凹陷在晶片载体主体中。 所述至少一个晶片保留袋中的每一个包括底板表面和围绕所述地板表面并限定所述晶片保持袋的周边的周壁表面。 至少一个热控制特征包括形成在晶片载体主体中并由晶片载体主体的内表面限定的内腔或空隙。

    CHEMICAL VAPOR DEPOSITION WITH ELEVATED TEMPERATURE GAS INJECTION
    24.
    发明申请
    CHEMICAL VAPOR DEPOSITION WITH ELEVATED TEMPERATURE GAS INJECTION 审中-公开
    化学蒸气沉积与高温气体注入

    公开(公告)号：US20140352619A1

    公开(公告)日：2014-12-04

    申请号：US14463993

    申请日：2014-08-20

    Applicant: Veeco Instruments Inc.

    Inventor： Alexander I. Gurary ,  Mikhail Belousov ,  Bojan Mitrovic

    IPC: C23C16/458

    CPC classification number: H01L21/02538 ,  C23C16/301 ,  C23C16/45504 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/45587 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/46 ,  H01L21/0262

    Abstract: A chemical vapor deposition reactor and method. Reactive gases, such as gases including a Group III metal source and a Group V metal source, are introduced into a rotating-disc reactor and directed downwardly onto a wafer carrier and substrates which are maintained at an elevated substrate temperature, typically above about 400° C. and normally about 700-1100° C. to deposit a compound such as a III-V semiconductor. The gases are introduced into the reactor at an inlet temperature desirably above about 75° C. and most preferably about 100°-250° C. The walls of the reactor may be at a temperature close to the inlet temperature. Use of an elevated inlet temperature allows the use of a lower rate of rotation of the wafer carrier, a higher operating pressure, lower flow rate, or some combination of these.

    Abstract translation: 化学气相沉积反应器及方法。 诸如包括III族金属源和V族金属源的气体的反应性气体被引入到旋转圆盘式反应器中并且被向下引导到晶片载体和基板上，所述晶片载体和基板保持在升高的基板温度，通常高于约400° 通常约700-1100℃以沉积诸如III-V族半导体的化合物。 气体在理想的高于约75℃，最优选约100℃-250℃的入口温度下被引入反应器中。反应器的壁可以处于接近入口温度的温度。 使用升高的入口温度允许使用较低的晶片载体的旋转速率，更高的操作压力，更低的流速或这些的一些组合。

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