公开(公告)号：US07598503B2

公开(公告)日：2009-10-06

申请号：US11451601

申请日：2006-06-13

申请人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Derk Jan Wilfred Klunder ,  Johannes Hubertus Josephina Moors

发明人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Derk Jan Wilfred Klunder ,  Johannes Hubertus Josephina Moors

IPC分类号： G01J3/10 ,  G21K5/10 ,  H05G2/00

CPC分类号： G03F7/70925 ,  B82Y10/00 ,  G03F7/70166 ,  G03F7/70916

摘要： A lithographic apparatus is disclosed. The apparatus includes a source for supplying hydrogen radicals, a guide for use in conjunction with the source, for directing hydrogen radicals to an application surface to be targeted by the hydrogen radicals. The guide is provided with a coating having a hydrogen radical recombination constant of less than 0.2. In this way, the radicals can be transported with reduced losses and are able to better interact with remaining contaminants on application surfaces, such as mirror surfaces.

摘要翻译： 公开了一种光刻设备。 该装置包括用于供应氢自由基的源，与源结合使用的引导件，用于将氢自由基引导到由氢自由基靶向的施加表面。 引导件具有氢自由基复合常数小于0.2的涂层。 以这种方式，可以以较少的损失运输自由基，并且能够更好地与应用表面（例如镜面）上的剩余污染物相互作用。

公开(公告)号：US07736820B2

公开(公告)日：2010-06-15

申请号：US11418465

申请日：2006-05-05

申请人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Koen Van Ingen Schenau ,  Derk Jan Wilfred Klunder

发明人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Koen Van Ingen Schenau ,  Derk Jan Wilfred Klunder

IPC分类号： G03F1/00

CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G02B5/0816 ,  G03F7/70575 ,  G21K1/062

摘要： An EUV mask includes, on top of a multi-layer mirror, a spectral purity enhancement layer, for application in an EUV lithographic apparatus. On top of the spectral purity enhancement layer, a patterned absorber layer is provided. The spectral purity enhancement layer includes a first spectral purity enhancement layer, but between the multi-layer mirror and first spectral purity enhancement layer there may be an intermediate layer or a second spectral purity enhancement layer and intermediate layer. The patterned absorber layer may also itself function as an anti-reflection (AR) coating. The AR effect of this absorber layer is a function of the aperture sizes in the pattern. The spectral purity of a mask may be enhanced, such that DUV radiation is diminished relatively stronger than EUV radiation.

摘要翻译： EUV掩模在多层反射镜之上包括光谱纯度增强层，用于EUV光刻设备中。 在光谱纯度增强层的顶部，提供了图案化的吸收层。 光谱纯度增强层包括第一光谱纯度增强层，但是在多层反射镜和第一光谱纯度增强层之间，可以存在中间层或第二光谱纯度增强层和中间层。 图案化的吸收层本身也可以用作抗反射（AR）涂层。 该吸收层的AR效应是图案中孔径尺寸的函数。 可以增强掩模的光谱纯度，使得DUV辐射比EUV辐射相对更强。

公开(公告)号：US20080316595A1

公开(公告)日：2008-12-25

申请号：US12230384

申请日：2008-08-28

申请人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Levinus Pieter Bakker ,  Vadim Yevgenyevich Banine ,  Derk Jan Wilfred Klunder

发明人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Levinus Pieter Bakker ,  Vadim Yevgenyevich Banine ,  Derk Jan Wilfred Klunder

IPC分类号： G02B5/28 ,  G02B5/26 ,  G02B5/22

CPC分类号： G02B1/10 ,  B82Y10/00 ,  B82Y40/00 ,  G02B5/0816 ,  G02B5/0891 ,  G02B5/283 ,  G03F1/24 ,  G03F7/70575 ,  G03F7/70958 ,  G21K1/062 ,  G21K2201/067

摘要： A multi-layer mirror includes a multi-layer stack. The multi-layer stack includes a plurality of alternating layers with a multi-layer stack top layer and a spectral filter top layer arranged on the multi-layer stack. The spectral filter top layer includes a first spectral purity enhancement layer that includes a first material m1 and has a first layer thickness d1, an intermediate layer that includes a second material m2 and has a second layer thickness d2. The intermediate layer is arranged on the multi-layer stack top layer. The first material is selected from SiN, Si3N4, SiO2, ZnS, Te, diamond, CsI, Se, SiC, amorphous carbon, MgF2, CaF2, TiO2, Ge, PbF2, ZrO2, BaTiO3, LiF or NaF. The second material includes a material different from the first material, and d1+d2 has a thickness between 1.5 and 40 nm.

摘要翻译： 多层反射镜包括多层堆叠。 多层堆叠包括多层交叠层，多层叠层顶层和布置在多层堆叠上的光谱过滤器顶层。 光谱过滤器顶层包括第一光谱纯度增强层，其包括第一材料m1并且具有第一层厚度d1，包括第二材料m2并具有第二层厚度d2的中间层。 中间层布置在多层堆叠顶层上。 第一种材料选自SiN，Si3N4，SiO2，ZnS，Te，金刚石，CsI，Se，SiC，无定形碳，MgF2，CaF2，TiO2，Ge，PbF2，ZrO2，BaTiO3，LiF或NaF。 第二材料包括与第一材料不同的材料，并且d1 + d2具有在1.5和40nm之间的厚度。

公开(公告)号：US07468521B2

公开(公告)日：2008-12-23

申请号：US11319190

申请日：2005-12-28

申请人： Derk Jan Wilfred Klunder ,  Levinus Pieter Bakker ,  Vadim Yevgenyevich Banine ,  Frank Jeroen Pieter Schuurmans ,  Dominik Vaudrevange ,  Maarten Marinus Johannes Wilhelmus Van Herpen

发明人： Derk Jan Wilfred Klunder ,  Levinus Pieter Bakker ,  Vadim Yevgenyevich Banine ,  Frank Jeroen Pieter Schuurmans ,  Dominik Vaudrevange ,  Maarten Marinus Johannes Wilhelmus Van Herpen

IPC分类号： G21G5/00 ,  G01J3/10 ,  G03B27/52

CPC分类号： G03F7/70916 ,  B82Y10/00 ,  G03F7/70166

摘要： A lithographic apparatus includes a radiation system for providing a beam of radiation. The radiation system includes at least one of a contaminant trap for trapping material emanating from the radiation source and a collector for collecting the beam of radiation. The at least one of the contaminant trap and the collector includes an element arranged in the path of the radiation beam on which the material emanating from the radiation source can deposit during propagation of the radiation beam in the radiation system. At least a part of the element disposed in the path of the radiation beam has a surface that has a highly specular grazing incidence reflectivity to reduce the absorption of the radiation beam in a direction of propagation of the radiation beam substantially non-parallel to the surface of the element, so that a thermal load experienced by the element is reduced.

摘要翻译： 光刻设备包括用于提供辐射束的辐射系统。 辐射系统包括用于捕获从辐射源发出的材料的污染物阱和用于收集辐射束的收集器中的至少一个。 污染物捕集阱和收集器中的至少一个包括布置在辐射束的路径中的元件，在辐射束的辐射束在辐射系统中的传播期间，从辐射源发出的材料可以沉积。 设置在辐射束的路径中的元件的至少一部分具有表面，该表面具有高镜面的掠入射反射率，以减少辐射束在基本上不平行于表面的辐射束的传播方向上的吸收 的元件，使得元件经历的热负荷降低。

公开(公告)号：US07106832B2

公开(公告)日：2006-09-12

申请号：US11031535

申请日：2005-01-10

申请人： Derk Jan Wilfred Klunder ,  Levinus Pieter Bakker ,  Vadim Yevgenyevich Banine ,  Maarten Marinus Johannes Wilhelmus Van Herpen

发明人： Derk Jan Wilfred Klunder ,  Levinus Pieter Bakker ,  Vadim Yevgenyevich Banine ,  Maarten Marinus Johannes Wilhelmus Van Herpen

IPC分类号： G21K3/00

CPC分类号： G03F7/70916

摘要： Particles emitted by a radiation source, and moving from the radiation source towards a processing system for processing the radiation from the radiation source, are filtered out of radiation propagating through a predetermined cross section of the radiation as emitted by the radiation source by a filter system. The filter system includes a plurality of foils and a transporter for transporting the foils along a trajectory which extends within the beam so that the foils intercept the particles within the beam. The transporter is arranged to transport the foils by a substantially translatory movement of the foils along at least a part of the trajectory.

摘要翻译： 由辐射源发射并从辐射源朝向用于处理来自辐射源的辐射的处理系统移动的颗粒被从辐射源通过辐射源发射的预定横截面传播的辐射滤出，该辐射源由过滤系统 。 过滤器系统包括多个箔片和运送器，用于沿着在光束内延伸的轨迹传送箔片，使得箔片截取光束内的颗粒。 输送器布置成通过沿着轨迹的至少一部分的箔片的基本上平移的运动来运输箔片。

公开(公告)号：US08139200B2

公开(公告)日：2012-03-20

申请号：US13028795

申请日：2011-02-16

申请人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Levinus Pieter Bakker ,  Vadim Yevgenyevich Banine ,  Derk Jan Wilfred Klunder

发明人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Levinus Pieter Bakker ,  Vadim Yevgenyevich Banine ,  Derk Jan Wilfred Klunder

IPC分类号： G03B27/54 ,  G03B27/42

CPC分类号： G02B1/10 ,  B82Y10/00 ,  B82Y40/00 ,  G02B5/0816 ,  G02B5/0891 ,  G02B5/283 ,  G03F1/24 ,  G03F7/70575 ,  G03F7/70958 ,  G21K1/062 ,  G21K2201/067

摘要： A lithographic apparatus comprising a support configured to support a patterning device; a substrate table configured to hold a substrate; a projection system configured to project a pattern imparted to a radiation beam by the patterning device onto a target portion of the substrate; and a first multi-layer mirror and a second multi-layer mirror, the first multi-layer mirror and the second multi-layer minor being arranged along a path of the radiation beam, the first multi-layer minor and the second multi-layer mirror each having a reflectivity of at least about 50% in extreme ultra violet wavelength range, and the first multi-layer mirror configured to reduce radiation having wavelengths in a first wavelength range and the second multi-layer minor configured to reduce radiation having wavelengths in a second wavelength range different from the first wavelength range, wherein the first wavelength range and the second wavelength range are outside extreme ultra violet wavelength range.

摘要翻译： 一种光刻设备，包括被配置为支撑图案形成装置的支撑件; 被配置为保持基板的基板台; 投影系统，被配置为将通过图案形成装置赋予辐射束的图案投影到基板的目标部分上; 以及第一多层反射镜和第二多层反射镜，所述第一多层反射镜和所述第二多层次要沿着所述辐射束的路径布置，所述第一多层次要层和所述第二多层反射镜 每个反射镜在极紫外波长范围内具有至少约50％的反射率，并且第一多层反射镜被配置为减少具有第一波长范围波长的辐射，而第二多层次镜被配置为减少具有波长的辐射 与第一波长范围不同的第二波长范围，其中第一波长范围和第二波长范围在极紫外波长范围之外。

公开(公告)号：US07875863B2

公开(公告)日：2011-01-25

申请号：US11643951

申请日：2006-12-22

申请人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Mandeep Singh ,  Harm-Jan Voorma ,  Derk Jan Wilfred Klunder

发明人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Mandeep Singh ,  Harm-Jan Voorma ,  Derk Jan Wilfred Klunder

IPC分类号： G21G5/00

CPC分类号： G03F7/70958 ,  B82Y10/00 ,  G03F7/70925 ,  G21K1/062 ,  G21K2201/067

摘要： An EUV illumination system, for example, for use in a photolithographic apparatus is configured to condition a radiation beam. A hydrogen radical source configured to supply gas containing hydrogen or hydrogen radicals into the illumination system. The hydrogen gas is effective to remove carbonaceous contamination from the surface of a mirror in the illumination system or to form a buffer against unwanted gases. In order to prevent damage by hydrogen that penetrates the mirror, the mirror comprises a layer made of metal non-metal compound adjacent a reflection surface of the mirror. A transition metal carbide, nitride, boride or silicide compound or mixture thereof may be used for example.

摘要翻译： 例如，用于光刻设备的EUV照明系统被配置为调节辐射束。 氢自由基源，被配置为将含有氢或氢自由基的气体供应到照明系统中。 氢气有效地从照明系统中的反射镜表面除去碳质污染物或形成缓冲液以防止不需要的气体。 为了防止穿透反射镜的氢的破坏，反射镜包括与反射镜的反射面相邻的金属非金属化合物制成的层。 可以使用过渡金属碳化物，氮化物，硼化物或硅化物或其混合物。

公开(公告)号：US07812330B2

公开(公告)日：2010-10-12

申请号：US12289884

申请日：2008-11-06

申请人： Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

发明人： Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

IPC分类号： H05G2/00

CPC分类号： G03F7/70933 ,  G03F7/70925

摘要： A cleaning arrangement is configured to clean an EUV optic of an EUV lithographic apparatus. The partial radical pressure ranges between 0.1-10 Pa. The cleaning arrangement can be configured inside a cleaning cocoon of the lithographic apparatus for offline cleaning. It can also be configured at particular positions inside the apparatus to clean nearby optics during production. In the pressure range of 0.1-10 Pa the penetration of atomic hydrogen into the optical devices is high, while the recombination to molecular hydrogen and hydrogen consumption is limited.

摘要翻译： 清洁装置被配置为清洁EUV光刻设备的EUV光学元件。 部分自由基压力范围在0.1-10Pa之间。清洁装置可以被配置在光刻设备的清洁茧内用于离线清洁。 它也可以配置在设备内的特定位置，以便在生产过程中清洁附近的光学元件。 在0.1-10Pa的压力范围内，原子氢进入光学器件的渗透率很高，而分子氢和氢消耗的复合受到限制。

公开(公告)号：US07465943B2

公开(公告)日：2008-12-16

申请号：US11296701

申请日：2005-12-08

申请人： Vadim Yevgenyevich Banine ,  Sonia Margart Skelly ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

发明人： Vadim Yevgenyevich Banine ,  Sonia Margart Skelly ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

IPC分类号： G21K5/00

CPC分类号： G03F7/70933 ,  B82Y10/00 ,  G03F7/70166 ,  G03F7/70925

摘要： A lithographic apparatus includes a collector configured to collect radiation from a radiation source, the collector including a plurality of shells forming separate compartments, and a cleaning arrangement including a gas inlet and a gas outlet, the cleaning arrangement being configured to clean surfaces of the plurality of shells by guiding a gas flow from the inlet through the compartments to the outlet. The cleaning arrangement includes a distribution system configured to divide the gas flow into several sub flows, each of the sub flows corresponding to one or more of the compartments, and a control system configured to control the relative amount of the sub flows.

摘要翻译： 光刻设备包括收集器，其被配置为收集来自辐射源的辐射，所述收集器包括形成分离的隔室的多个壳体，以及包括气体入口和气体出口的清洁装置，所述清洁装置构造成清洁所述多个 通过引导气流从入口通过隔间引导到​​出口。 清洁装置包括分配系统，其配置为将气流分成几个子流，每个子流对应于一个或多个隔间，以及被配置为控制子流的相对量的控制系统。

公开(公告)号：US07462850B2

公开(公告)日：2008-12-09

申请号：US11296702

申请日：2005-12-08

申请人： Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

发明人： Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

IPC分类号： H05G2/00

CPC分类号： G03F7/70933 ,  G03F7/70925

摘要： A cleaning arrangement is configured to clean an EUV optic of an EUV lithographic apparatus. The partial radical pressure ranges between 0.1-10 Pa. The cleaning arrangement can be configured inside a cleaning cocoon of the lithographic apparatus for offline cleaning. It can also be configured at particular positions inside the apparatus to clean nearby optics during production. In the pressure range of 0.1-10 Pa the penetration of atomic hydrogen into the optical devices is high, while the recombination to molecular hydrogen and hydrogen consumption is limited.

摘要翻译： 清洁装置被配置为清洁EUV光刻设备的EUV光学元件。 部分自由基压力范围在0.1-10Pa之间。清洁装置可以被配置在光刻设备的清洁茧内用于离线清洁。 它也可以在设备内的特定位置进行配置，以便在生产过程中清洁附近的光学元件。 在0.1-10Pa的压力范围内，原子氢进入光学器件的渗透率很高，而分子氢和氢消耗的复合受到限制。