公开(公告)号：US07598503B2

公开(公告)日：2009-10-06

申请号：US11451601

申请日：2006-06-13

申请人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Derk Jan Wilfred Klunder ,  Johannes Hubertus Josephina Moors

发明人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Derk Jan Wilfred Klunder ,  Johannes Hubertus Josephina Moors

IPC分类号： G01J3/10 ,  G21K5/10 ,  H05G2/00

CPC分类号： G03F7/70925 ,  B82Y10/00 ,  G03F7/70166 ,  G03F7/70916

摘要： A lithographic apparatus is disclosed. The apparatus includes a source for supplying hydrogen radicals, a guide for use in conjunction with the source, for directing hydrogen radicals to an application surface to be targeted by the hydrogen radicals. The guide is provided with a coating having a hydrogen radical recombination constant of less than 0.2. In this way, the radicals can be transported with reduced losses and are able to better interact with remaining contaminants on application surfaces, such as mirror surfaces.

摘要翻译： 公开了一种光刻设备。 该装置包括用于供应氢自由基的源，与源结合使用的引导件，用于将氢自由基引导到由氢自由基靶向的施加表面。 引导件具有氢自由基复合常数小于0.2的涂层。 以这种方式，可以以较少的损失运输自由基，并且能够更好地与应用表面（例如镜面）上的剩余污染物相互作用。

公开(公告)号：US20090072168A1

公开(公告)日：2009-03-19

申请号：US12289884

申请日：2008-11-06

申请人： Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch IVANOV ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

发明人： Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch IVANOV ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

IPC分类号： G01J3/10

CPC分类号： G03F7/70933 ,  G03F7/70925

摘要： A cleaning arrangement is configured to clean an EUV optic of an EUV lithographic apparatus. The partial radical pressure ranges between 0.1-10 Pa. The cleaning arrangement can be configured inside a cleaning cocoon of the lithographic apparatus for offline cleaning. It can also be configured at particular positions inside the apparatus to clean nearby optics during production. In the pressure range of 0.1-10 Pa the penetration of atomic hydrogen into the optical devices is high, while the recombination to molecular hydrogen and hydrogen consumption is limited.

摘要翻译： 清洁装置被配置为清洁EUV光刻设备的EUV光学元件。 部分自由基压力范围在0.1-10Pa之间。清洁装置可以被配置在光刻设备的清洁茧内用于离线清洁。 它也可以配置在设备内的特定位置，以便在生产过程中清洁附近的光学元件。 在0.1-10Pa的压力范围内，原子氢进入光学器件的渗透率很高，而分子氢和氢消耗的复合受到限制。

公开(公告)号：US07414700B2

公开(公告)日：2008-08-19

申请号：US11239479

申请日：2005-09-30

申请人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Johannes Hubertus Josephina Moors ,  Carolus Ida Maria Antonius Spee ,  Derk Jan Wilfred Klunder

发明人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Johannes Hubertus Josephina Moors ,  Carolus Ida Maria Antonius Spee ,  Derk Jan Wilfred Klunder

IPC分类号： G03B27/42

CPC分类号： B82Y10/00 ,  B08B7/0035 ,  B08B17/04 ,  G03F7/70925 ,  G03F7/70983 ,  G21K1/062

摘要： A method for the removal of a deposition on an optical element of an apparatus including the optical element includes providing an H2 containing gas in at least part of the apparatus includes producing hydrogen radicals from H2 from the H2 containing gas; and bringing the optical element with deposition into contact with at least part of the hydrogen radicals and removing at least part of the deposition. Further, a method for the protection of an optical element of an apparatus including the optical element includes providing a cap layer to the optical element by a deposition process; and during or after use of the apparatus, removing at least part of the cap layer from the optical element in a removal process as described above. The methods can be applied in a lithographic apparatus.

公开(公告)号：US07355672B2

公开(公告)日：2008-04-08

申请号：US10956344

申请日：2004-10-04

申请人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Johannes Hubertus Josephina Moors ,  Carolus Ida Maria Antonius Spee ,  Derk Jan Wilfred Klunder

发明人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Johannes Hubertus Josephina Moors ,  Carolus Ida Maria Antonius Spee ,  Derk Jan Wilfred Klunder

IPC分类号： G03B27/52 ,  G03B27/42 ,  G03B27/32 ,  C23G1/00 ,  G03C5/00

CPC分类号： B82Y10/00 ,  B08B7/0035 ,  B08B17/04 ,  G03F7/70925 ,  G03F7/70983 ,  G21K1/062

摘要： A method for the removal of a deposition on an optical element of an apparatus including the optical element includes providing an H2 containing gas in at least part of the apparatus includes producing hydrogen radicals from H2 from the H2 containing gas; and bringing the optical element with deposition into contact with at least part of the hydrogen radicals and removing at least part of the deposition. Further, a method for the protection of an optical element of an apparatus including the optical element includes providing a cap layer to the optical element by a deposition process; and during or after use of the apparatus, removing at least part of the cap layer from the optical element in a removal process as described above. The methods can be applied in a lithographic apparatus.

摘要翻译： 在包括光学元件的设备的光学元件上去除沉积的方法包括在至少部分设备中提供含H 2的气体，包括从H 2 来自含H 2气体; 并使具有沉积的光学元件与至少部分氢自由基接触并除去至少部分沉积物。 此外，用于保护包括光学元件的装置的光学元件的方法包括通过沉积工艺向光学元件提供盖层; 并且在使用所述装置期间或之后，如上所述在去除过程中从所述光学元件中去除所述盖层的至少一部分。 该方法可以应用在光刻设备中。

公开(公告)号：US07812330B2

公开(公告)日：2010-10-12

申请号：US12289884

申请日：2008-11-06

申请人： Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

发明人： Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

IPC分类号： H05G2/00

CPC分类号： G03F7/70933 ,  G03F7/70925

摘要： A cleaning arrangement is configured to clean an EUV optic of an EUV lithographic apparatus. The partial radical pressure ranges between 0.1-10 Pa. The cleaning arrangement can be configured inside a cleaning cocoon of the lithographic apparatus for offline cleaning. It can also be configured at particular positions inside the apparatus to clean nearby optics during production. In the pressure range of 0.1-10 Pa the penetration of atomic hydrogen into the optical devices is high, while the recombination to molecular hydrogen and hydrogen consumption is limited.

摘要翻译： 清洁装置被配置为清洁EUV光刻设备的EUV光学元件。 部分自由基压力范围在0.1-10Pa之间。清洁装置可以被配置在光刻设备的清洁茧内用于离线清洁。 它也可以配置在设备内的特定位置，以便在生产过程中清洁附近的光学元件。 在0.1-10Pa的压力范围内，原子氢进入光学器件的渗透率很高，而分子氢和氢消耗的复合受到限制。

公开(公告)号：US07462850B2

公开(公告)日：2008-12-09

申请号：US11296702

申请日：2005-12-08

申请人： Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

发明人： Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

IPC分类号： H05G2/00

CPC分类号： G03F7/70933 ,  G03F7/70925

摘要： A cleaning arrangement is configured to clean an EUV optic of an EUV lithographic apparatus. The partial radical pressure ranges between 0.1-10 Pa. The cleaning arrangement can be configured inside a cleaning cocoon of the lithographic apparatus for offline cleaning. It can also be configured at particular positions inside the apparatus to clean nearby optics during production. In the pressure range of 0.1-10 Pa the penetration of atomic hydrogen into the optical devices is high, while the recombination to molecular hydrogen and hydrogen consumption is limited.

摘要翻译： 清洁装置被配置为清洁EUV光刻设备的EUV光学元件。 部分自由基压力范围在0.1-10Pa之间。清洁装置可以被配置在光刻设备的清洁茧内用于离线清洁。 它也可以在设备内的特定位置进行配置，以便在生产过程中清洁附近的光学元件。 在0.1-10Pa的压力范围内，原子氢进入光学器件的渗透率很高，而分子氢和氢消耗的复合受到限制。

公开(公告)号：US07262423B2

公开(公告)日：2007-08-28

申请号：US11292310

申请日：2005-12-02

申请人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Johannes Hubertus Josephina Moors ,  Derk Jan Wilfred Klunder

发明人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Johannes Hubertus Josephina Moors ,  Derk Jan Wilfred Klunder

IPC分类号： G01B9/02

CPC分类号： G03F7/70916 ,  B82Y10/00 ,  G03F7/70033 ,  G03F7/70041 ,  G03F7/70191 ,  G03F7/7055 ,  G03F7/70908 ,  G21K1/043 ,  G21K1/062

摘要： A radiation system for generating a beam of radiation is disclosed. The radiation system includes a pulsed EUV source for generating EUV radiation, and a spectral filter mounted in front of the EUV source for selectively passing a spectral range of a beam of EUV radiation from the EUV source. The spectral filter is mounted on a movable mount configured to be moved in synchronicity with the pulsed EUV source to prevent debris traveling from the EUV source from impacting the spectral filter. Accordingly, the spectral filter is kept substantially free from contamination by the debris.

摘要翻译： 公开了一种用于产生辐射束的辐射系统。 辐射系统包括用于产生EUV辐射的脉冲EUV源和安装在EUV源前面的光谱滤波器，用于选择性地通过来自EUV源的EUV辐射束的光谱范围。 光谱滤光器安装在可移动的安装座上，可移动的安装件被配置为与脉冲EUV源同步地移动，以防止从EUV源传播的碎屑撞击光谱滤波器。 因此，光谱滤波器基本上不受碎屑的污染。

公开(公告)号：US20080011967A1

公开(公告)日：2008-01-17

申请号：US11486386

申请日：2006-07-14

申请人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Johannes Hubertus Josephina Moors ,  Wouter Anton Soer

发明人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Johannes Hubertus Josephina Moors ,  Wouter Anton Soer

IPC分类号： G03F7/20

CPC分类号： G03F7/70925 ,  G03F7/70916

摘要： A lithographic apparatus includes a radiation source and an object with a first surface which is configured to retain metal contaminants. This surface has the function of a getter. The first surface is arranged substantially outside the region traversed by the radiation beam generated by the radiation source during lithographic processing. The first surface may further be used to retain volatile contaminants generated in a cleaning method.

摘要翻译： 光刻设备包括辐射源和具有构造成保持金属污染物的第一表面的物体。 该表面具有吸气剂的功能。 在光刻处理期间，第一表面基本上布置在由辐射源产生的辐射束穿过的区域的外侧。 第一表面可以进一步用于保持在清洁方法中产生的挥发性污染物。

公开(公告)号：US20110019174A1

公开(公告)日：2011-01-27

申请号：US12919741

申请日：2009-02-24

申请人： Wouter Anthon Soer ,  Vadim Yevgenyevich Banine ,  Johannes Hubertus Josephina Moors ,  Maarten Marinus Johannes Wilhelmus Van Herpen ,  Andrei Mikhailovich Yakunin

发明人： Wouter Anthon Soer ,  Vadim Yevgenyevich Banine ,  Johannes Hubertus Josephina Moors ,  Maarten Marinus Johannes Wilhelmus Van Herpen ,  Andrei Mikhailovich Yakunin

IPC分类号： G03F7/20 ,  G02B5/22 ,  G02B5/26 ,  G03B27/72

CPC分类号： G02B5/208 ,  B82Y10/00 ,  G02B5/0891 ,  G02B5/22 ,  G02B5/26 ,  G03F7/70191 ,  G03F7/702 ,  G03F7/70575 ,  G03F7/70958 ,  G21K1/067 ,  G21K2201/061 ,  G21K2201/064 ,  G21K2201/065 ,  G21K2201/067

摘要： An optical element includes a first layer that includes a first material, and is configured to be substantially reflective for radiation of a first wavelength and substantially transparent for radiation of a second wavelength. The optical element includes a second layer that includes a second material, and is configured to be substantially absorptive or transparent for the radiation of the second wavelength. The optical element includes a third layer that includes a third material between the first layer and the second layer, and is substantially transparent for the radiation of the second wavelength and configured to reduce reflection of the radiation of the second wavelength from a top surface of the second layer facing the first layer. The first layer is located upstream in the optical path of incoming radiation with respect to the second layer in order to improve spectral purity of the radiation of the first wavelength.

摘要翻译： 光学元件包括第一层，其包括第一材料，并且被配置为对于第一波长的辐射基本上是反射的，并且对于第二波长的辐射基本上是透明的。 光学元件包括第二层，其包括第二材料，并且被配置为对于第二波长的辐射是基本吸收或透明的。 光学元件包括第三层，其包括在第一层和第二层之间的第三材料，并且对于第二波长的辐射基本上是透明的，并且被配置为减少第二波长的辐射的反射从第二层的顶表面 第二层面向第一层。 为了提高第一波长的辐射的光谱纯度，第一层相对于第二层位于入射辐射的光路中的上游。

公开(公告)号：US08345223B2

公开(公告)日：2013-01-01

申请号：US12919741

申请日：2009-02-24

申请人： Wouter Anthon Soer ,  Vadim Yevgenyevich Banine ,  Johannes Hubertus Josephina Moors ,  Maarten Marinus Johannes Wilhelmus Van Herpen ,  Andrei Mikhailovich Yakunin

发明人： Wouter Anthon Soer ,  Vadim Yevgenyevich Banine ,  Johannes Hubertus Josephina Moors ,  Maarten Marinus Johannes Wilhelmus Van Herpen ,  Andrei Mikhailovich Yakunin

IPC分类号： G03B27/54 ,  G03B27/42 ,  G02B27/14

CPC分类号： G02B5/208 ,  B82Y10/00 ,  G02B5/0891 ,  G02B5/22 ,  G02B5/26 ,  G03F7/70191 ,  G03F7/702 ,  G03F7/70575 ,  G03F7/70958 ,  G21K1/067 ,  G21K2201/061 ,  G21K2201/064 ,  G21K2201/065 ,  G21K2201/067

摘要： An optical element includes a first layer that includes a first material, and is configured to be substantially reflective for radiation of a first wavelength and substantially transparent for radiation of a second wavelength. The optical element includes a second layer that includes a second material, and is configured to be substantially absorptive or transparent for the radiation of the second wavelength. The optical element includes a third layer that includes a third material between the first layer and the second layer, and is substantially transparent for the radiation of the second wavelength and configured to reduce reflection of the radiation of the second wavelength from a top surface of the second layer facing the first layer. The first layer is located upstream in the optical path of incoming radiation with respect to the second layer in order to improve spectral purity of the radiation of the first wavelength.

摘要翻译： 光学元件包括第一层，其包括第一材料，并且被配置为对于第一波长的辐射基本上是反射的，并且对于第二波长的辐射基本上是透明的。 光学元件包括第二层，其包括第二材料，并且被配置为对于第二波长的辐射是基本吸收或透明的。 光学元件包括第三层，其包括在第一层和第二层之间的第三材料，并且对于第二波长的辐射基本上是透明的，并且被配置为减少第二波长的辐射的反射从第二层的顶表面 第二层面向第一层。 为了提高第一波长的辐射的光谱纯度，第一层相对于第二层位于入射辐射的光路中的上游。