摘要:
An infrared-detecting element includes: a substrate; a laminated body; an anchor coupling a part of the laminated body with the substrate and supporting the laminated body with a gap above the substrate; and an amplifier provided on the substrate and connected to at least one of the lower electrode and the upper electrode. The laminated body has a lower electrode, an upper electrode, and a piezoelectric film made of aluminum nitride which is provided between the lower electrode and the upper electrode and in which a c-axis is oriented almost perpendicularly to a film plane. The amplifier has a circuit performing conversion into voltage according to a charge generated in the laminated body.
摘要:
A solid-state image sensing device has a plurality of pixels, a read-out circuit for reading out electric signals obtained by the photoelectric conversion element, and a signal processing unit for performing signal processing for the electric signal read out from the read-out circuit. The plurality of pixels include a first pixel having a transparent film, a plurality of second pixels each having a first color filter, a plurality of third pixels each having a second color filter, and a plurality of fourth pixels each having a third color filter. The signal processing unit has a color acquisition unit for acquiring a white pixel value and first to third color pixel values, an edge judgment unit, a color separation unit and a single color pixel calculation unit.
摘要:
An infrared solid-state image sensor comprises: a pixel area comprising a sensitive pixel area where infrared detection pixels are arranged in a matrix form to detect incident infrared rays on the semiconductor substrate and a reference pixel area where reference pixels are provided, each of the infrared detection pixels comprising a thermoelectric conversion part, the thermoelectric conversion part comprising an infrared absorption film to absorb the incident infrared rays and convert the incident infrared rays to heat and a first thermoelectric conversion element to convert the heat obtained by the conversion in the infrared absorption film to a electric signal, each of the reference pixels comprising a second thermoelectric conversion element. Each of first ends of the reference pixels are connected to a reference potential line, and a difference between the signal potential read out from a corresponding signal line and a reference potential supplied from the reference potential line is amplified and outputted.
摘要:
A solid-state image sensor has a plurality of pixels, a read-out circuit and a signal processing section. The plurality of pixels includes a plurality of first pixels, a plurality of second pixels, a plurality of third pixels and a plurality of fourth pixels. The signal processing section includes a color acquisition section, a first judgment section configured to determine whether or not the white data value W in the target pixel block is smaller than a predetermined first set value, and a white color correction section configured to perform correction processing of the white color data value W in the target pixel block based on the following Expression (1) when the judgment result of the first judgment section is NO, and to output the white data value W by itself without performing the correction processing based on the Expression (1) when the judgment result of the first determination section is YES; W1=S1C1+S2C2+S3C3 (1) where each of S1, S2, and S3 is a coefficient that is determined based on a color balance.
摘要:
An image sensor includes a semiconductor substrate; first pixels laid out above cavities provided within the semiconductor substrate, the first pixels converting thermal energy generated by incident light into an electric signal; supporting parts connected between the first pixels and the semiconductor substrate, the supporting parts supporting the first pixels above the cavities; and second pixels fixedly provided on the semiconductor substrate without via the cavities, wherein a plurality of the first pixels and a plurality of the second pixels are laid out two-dimensionally to form a pixel region, and each of the second pixels is adjacent to the first pixels.
摘要:
An infrared ray sensor element includes: a first signal wiring part including a first signal wire and provided on a first region of a semiconductor substrate different from a region on which a concave part is provided; a second signal wiring part including a second signal wire and provided on the first region so as to intersect the first signal wiring part; a supporter including a support wiring part disposed over the concave part, and including a first wire electrically connected at a first end thereof to the first signal wire, and a second wire insulated from the first wire, disposed in parallel with the first wire, and electrically connected at a first end thereof to the second signal wire; a thermoelectric transducer electrically connected to second ends of the first and second wires; an infrared ray absorption layer provided over the thermoelectric transducer; and a detection cell provided over the concave part.
摘要:
A two-dimensional digital data acquisition element includes: a pixel area having a plurality of pixels arranged in a matrix form, each of the pixels having a photoelectric conversion element to convert the reproduced light from the optical information recording medium to an electric signal; selection circuits which select the pixel; a readout circuit which reads out an electric signal of a pixel selected by the selection circuits; and a 1-bit AD converter which converts an output of the readout circuit to 1-bit digital data. A pitch ratio N between a pitch P1 of the unit data areas in the two-dimensional digital image information and a pitch P2 of the pixels in the pixel area defined as N=P1/P2 satisfies a relation A·n2/(An+1)
摘要翻译:二维数字数据采集元件包括:具有以矩阵形式布置的多个像素的像素区域,每个像素具有光电转换元件,用于将来自光信息记录介质的再现光转换为电信号; 选择像素的选择电路; 读出电路,读出由选择电路选择的像素的电信号; 以及将读出电路的输出转换为1位数字数据的1位AD转换器。 二维数字图像信息中的单位数据区域的间距P1与定义为N = P 1 / P 2的像素区域中的像素的间距P 2之间的间距比N满足< -formulae description =“In-line Formulas”end =“lead”?> An 2 SUP> /(An + 1) /(An-1) <?in-line-formula description =“在线公式”end =“tail”?>其中A是二维数字数据的一个字节的一维方向上的数字数据的数量,n是自然的 至少数2。
摘要:
In a pixel unit, cells are arranged in rows and columns two-dimensionally. Each of the cells accumulates signal charge obtained by photoelectrically converting light incident on photoelectric conversion section and outputs a voltage corresponding to the accumulated signal charge. On the cells, W, R, G, and B color filters are provided. Analog signals output from the W pixel, R pixel, G pixel, and B pixel are converted into digital signals by an analog/digital converter circuit, which outputs a W signal, an R signal, a G signal, and a B signal separately. A W signal saturated signal quantity is controlled by a saturated signal quantity control circuit. Then, a signal generator circuit corrects the R signal, the G signal, and the B signal using the W signal, the R signal, the G signal, and B signal output from the analog/digital converter circuit and outputs the corrected R, G, and B signals.
摘要:
A solid-state imaging device according to an embodiment includes: an imaging element including a semiconductor substrate and a plurality of pixel blocks, each of the pixel blocks including at least two of R pixels, G pixels, B pixels, and W pixels; a first optical system configured to form an image of an object on an imaging plane; and a second optical system including a microlens array having a plurality of microlenses provided for the respective pixels blocks, the second optical system being located between the imaging element and the first optical system, the second optical system being configured to reduce and re-image the image formed on the imaging plane onto each of the pixel blocks. A proportion of the W pixels to be provided increases in a direction from a center of each pixel block toward an outer periphery thereof.
摘要:
A solid-state image pickup device has a photoelectric conversion element that converts light incident from a first surface of a substrate into a signal charge and accumulates the signal charge, a transistor that is formed on a second surface side opposite to the first surface of the substrate and reads out the signal charge accumulated by the photoelectric conversion element, a supporting substrate stuck to the second surface of the substrate, and an antireflection coating formed on the first surface of the substrate, wherein the first surface of the substrate includes a curved surface or an inclined surface forming a prescribed angle to the second surface.