公开(公告)号：US08304848B2

公开(公告)日：2012-11-06

申请号：US12883732

申请日：2010-09-16

申请人： Kazuhiro Suzuki ,  Ikuo Fujiwara ,  Keita Sasaki ,  Honam Kwon ,  Hitoshi Yagi ,  Hiroto Honda ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno ,  Hideyuki Funaki

发明人： Kazuhiro Suzuki ,  Ikuo Fujiwara ,  Keita Sasaki ,  Honam Kwon ,  Hitoshi Yagi ,  Hiroto Honda ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno ,  Hideyuki Funaki

IPC分类号： H01L31/00 ,  H01L31/04

CPC分类号： G01J5/02 ,  G01J5/023 ,  G01J5/024 ,  H04N5/33

摘要： Certain embodiments provide an infrared imaging device including: an SOI structure that is placed at a distance from a substrate, and includes: heat-sensitive diodes that detect infrared rays and convert the infrared rays into heat; and STI regions that separate the heat-sensitive diodes from one another; an interlayer insulating film that is stacked on the SOI structure; and supporting legs that are connected to the heat-sensitive diodes and vertical signal lines provided in outer peripheral regions of the heat-sensitive diodes. Each of the supporting legs includes: an interconnect unit that transmit signals to the vertical signal lines; and interlayer insulating layers that sandwich the interconnect unit, each bottom side of the interlayer insulating layers being located in a higher position than the SOI structure.

摘要翻译： 某些实施例提供了一种红外成像装置，包括：SOI结构，其被放置在离基板一定距离处，并且包括：热敏二极管，其检测红外线并将红外线转换成热; 以及将热敏二极管彼此分离的STI区域; 堆叠在SOI结构上的层间绝缘膜; 以及连接到热敏二极管的支撑腿和设置在热敏二极管的外周区域中的垂直信号线。 每个支撑腿包括：将信号传输到垂直信号线的互连单元; 以及层叠绝缘层，夹着所述互连单元，所述层间绝缘层的每个底侧位于比所述SOI结构更高的位置。

公开(公告)号：US08067740B2

公开(公告)日：2011-11-29

申请号：US12508846

申请日：2009-07-24

申请人： Keita Sasaki ,  Hideyuki Funaki ,  Hiroto Honda ,  Ikuo Fujiwara ,  Koichi Ishii ,  Hitoshi Yagi

发明人： Keita Sasaki ,  Hideyuki Funaki ,  Hiroto Honda ,  Ikuo Fujiwara ,  Koichi Ishii ,  Hitoshi Yagi

IPC分类号： H01L31/02

CPC分类号： H01L27/14669 ,  H01L27/1203 ,  H01L27/14683

摘要： An image sensor includes a semiconductor substrate; first pixels laid out above cavities provided within the semiconductor substrate, the first pixels converting thermal energy generated by incident light into an electric signal; supporting parts connected between the first pixels and the semiconductor substrate, the supporting parts supporting the first pixels above the cavities; and second pixels fixedly provided on the semiconductor substrate without via the cavities, wherein a plurality of the first pixels and a plurality of the second pixels are laid out two-dimensionally to form a pixel region, and each of the second pixels is adjacent to the first pixels.

摘要翻译： 图像传感器包括半导体衬底; 第一像素被布置在设置在半导体衬底内的腔上方，第一像素将由入射光产生的热能转换为电信号; 连接在第一像素和半导体衬底之间的支撑部件，支撑部件支撑空腔上方的第一像素; 以及固定地设置在半导体衬底上的第二像素，而不经由空腔，其中多个第一像素和多个第二像素被二维布置以形成像素区域，并且每个第二像素与 第一个像素。

公开(公告)号：US5861462A

公开(公告)日：1999-01-19

申请号：US953667

申请日：1992-09-30

申请人： Keita Sasaki ,  Masatoshi Shinomori

发明人： Keita Sasaki ,  Masatoshi Shinomori

IPC分类号： C08J5/04 ,  C08L23/10 ,  C08L55/02 ,  C08L67/02 ,  C08L69/00 ,  C08L71/12 ,  C08L77/00 ,  C08L101/00 ,  C09K19/54 ,  C08L67/00 ,  C08L77/12

CPC分类号： C08J5/046 ,  C08J7/047 ,  C08L101/00 ,  C08L23/10 ,  C08L55/02 ,  C08L67/02 ,  C08L69/00 ,  C08L71/123 ,  C08L77/00 ,  C09K19/544 ,  C08J2323/10 ,  C08J2355/02 ,  C08J2369/00 ,  C08J2377/00 ,  C08L2205/03 ,  C08L2205/12 ,  C08L67/00 ,  C08L71/12 ,  Y10S525/935

摘要： The present invention relates to a method for forming the LCP composite having LCP fibers dispersed in the matrix resin even if the LCP content may be smaller than the lower limit of the fiber formable range.The method is characterized in that a resin composite reinforced by the LCP fiber in a mixture ratio beyond the fiber formable range or the preferred fiber formable range by means of an extrusion or injection molding of a resin mixture containing a liquid crystal resin composite extruded in the fiber formable range or the preferred fiber formable range.

摘要翻译： 本发明涉及一种形成具有分散在基质树脂中的LCP纤维的LCP复合物的方法，即使LCP含量可能小于纤维可成形范围的下限。 该方法的特征在于，通过挤出或注塑成型含有液晶树脂复合材料的树脂混合物，将由LCP纤维增强的树脂复合比例超过可纤维成形范围或优选的纤维成形范围 纤维可成形范围或优选纤维可成形范围。

公开(公告)号：US20130093902A1

公开(公告)日：2013-04-18

申请号：US13648376

申请日：2012-10-10

申请人： Hiroto HONDA ,  Hideyuki Funaki ,  Keita Sasaki ,  Kazuhiro Suzuki ,  Masaki Atsuta ,  Koichi Ishii ,  Ikuo Fujiwara

发明人： Hiroto HONDA ,  Hideyuki Funaki ,  Keita Sasaki ,  Kazuhiro Suzuki ,  Masaki Atsuta ,  Koichi Ishii ,  Ikuo Fujiwara

IPC分类号： H04N5/33

CPC分类号： H04N5/33 ,  H04N5/3597

摘要： An infrared solid state imaging device includes an infrared detection element unit having heat sensitive pixels, an AD conversion unit which conducts analog-to-digital conversion on an infrared image signal obtained by the infrared detection element unit, and a digital signal processing unit which converts the image signal converted to a digital signal. The digital signal processing unit stores an image value produced from the digital signal, and acquired in a frame immediately preceding a current frame, subtracts an image value obtained by multiplying the image value acquired in the frame immediately preceding the current frame by a predetermined constant α in a range of 0 to 1, from an image value acquired in the current frame, and conducts processing of multiplying a resultant image value obtained by the subtraction by 1/(1−α) so that an infrared image with less afterimage is provided.

摘要翻译： 一种红外固体摄像装置，具备：具有热敏像素的红外线检测元件单元，对由红外线检测元件单元得到的红外图像信号进行模数变换的AD转换单元;以及数字信号处理单元， 图像信号转换成数字信号。 数字信号处理单元存储从数字信号产生并且在紧邻当前帧之前的帧中获取的图像值，减去通过将在当前帧之前的帧中获取的图像值乘以预定常数α而获得的图像值 在从当前帧中获取的图像值的0到1的范围内，并且进行将通过减法获得的合成图像值乘以1 /（1-α）的处理，使得提供具有较少余像的红外图像。

公开(公告)号：US08338902B2

公开(公告)日：2012-12-25

申请号：US13050512

申请日：2011-03-17

申请人： Honam Kwon ,  Hideyuki Funaki ,  Hiroto Honda ,  Hitoshi Yagi ,  Ikuo Fujiwara ,  Masaki Atsuta ,  Kazuhiro Suzuki ,  Keita Sasaki ,  Koichi Ishii

发明人： Honam Kwon ,  Hideyuki Funaki ,  Hiroto Honda ,  Hitoshi Yagi ,  Ikuo Fujiwara ,  Masaki Atsuta ,  Kazuhiro Suzuki ,  Keita Sasaki ,  Koichi Ishii

IPC分类号： H01L31/024

CPC分类号： H01L27/14649 ,  G01J5/007 ,  G01J5/20 ,  G01J2005/068

摘要： An uncooled infrared image sensor according to an embodiments includes: a plurality of pixel cells formed in a first region on a semiconductor substrate; a reference pixel cell formed in a second region on the semiconductor substrate and corresponding to each row or each column of the pixel cells; a supporting unit formed for each of the pixel cell and supporting a corresponding pixel cell; and an interconnect unit formed for each reference pixel cell. Each of the pixel cells includes: a first infrared absorption film and a first heat sensitive element. The reference pixel cell includes: a second infrared absorption film and a second heat sensitive element, the second heat sensitive element having the same characteristics as characteristics of the first heat sensitive element. The third and fourth interconnects of the interconnect unit have the same electrical resistance as electrical resistance of the first and second interconnects of the supporting unit.

摘要翻译： 根据实施例的非制冷红外图像传感器包括：形成在半导体衬底上的第一区域中的多个像素单元; 形成在所述半导体衬底上的与所述像素单元的每列或每列相对应的所述半导体衬底上的第二区域中的参考像素单元; 为每个像素单元形成的支撑单元，并支撑相应的像素单元; 以及为每个参考像素单元形成的互连单元。 每个像素单元包括：第一红外线吸收膜和第一热敏元件。 参考像素单元包括：第二红外线吸收膜和第二热敏元件，第二热敏元件具有与第一热敏元件的特性相同的特性。 互连单元的第三和第四互连具有与支撑单元的第一和第二互连的电阻相同的电阻。

公开(公告)号：US20120175723A1

公开(公告)日：2012-07-12

申请号：US13426097

申请日：2012-03-21

申请人： Ikuo FUJIWARA ,  Hitoshi YAGI ,  Keita SASAKI

发明人： Ikuo FUJIWARA ,  Hitoshi YAGI ,  Keita SASAKI

IPC分类号： H01L31/101 ,  H01L31/18

CPC分类号： H04N5/33 ,  G01J5/024 ,  G01J5/10

摘要： According to one embodiment, an infrared imaging device includes a substrate, a detecting section, an interconnection, a contact plug and a support beam. The detecting section is provided above the substrate and includes an infrared absorbing section and a thermoelectric converting section. The interconnection is provided on an interconnection region of the substrate and is configured to read the electrical signal. The contact plug is extends from the interconnection toward a connecting layer provided in the interconnection region. The contact plug is electrically connected to the interconnection and the connecting layer. The support beam includes a support beam interconnection and supports the detecting section above the substrate. The support beam interconnection transmits the electrical signal from the thermoelectric converting section to the interconnection.

摘要翻译： 根据一个实施例，红外成像装置包括基板，检测部分，互连件，接触插塞和支撑梁。 检测部设置在基板的上方，并且包括红外线吸收部和热电转换部。 互连设置在基板的互连区域上，并被配置为读取电信号。 接触插头从互连延伸到设置在互连区域中的连接层。 接触插头电连接到互连和连接层。 支撑梁包括支撑梁互连并且支撑基板上方的检测部分。 支撑束互连将电信号从热电转换部传送到互连。

公开(公告)号：US5632945A

公开(公告)日：1997-05-27

申请号：US400386

申请日：1995-03-03

申请人： Keita Sasaki ,  Masao Hara ,  Takashi Tomita ,  Masatoshi Shinomori

发明人： Keita Sasaki ,  Masao Hara ,  Takashi Tomita ,  Masatoshi Shinomori

IPC分类号： B29B13/02 ,  B29B13/10 ,  B29B17/00 ,  B29B17/04 ,  B29C39/02 ,  B29C47/00 ,  B29C70/06 ,  C08L77/00 ,  C08L77/02 ,  C08L77/06

CPC分类号： B29B17/0412 ,  B29B13/022 ,  B29B13/023 ,  B29B13/10 ,  B29B17/0026 ,  B29C39/02 ,  B29C47/0004 ,  B29C70/06 ,  C08L77/00 ,  C08L77/02 ,  C08L77/06 ,  B29C2793/009 ,  B29C47/00 ,  B29C47/0019 ,  B29K2105/0079 ,  B29K2105/0088 ,  B29K2105/06 ,  B29K2105/255 ,  B29K2995/005 ,  B29K2995/0077 ,  Y02W30/62 ,  Y02W30/625

摘要： A method for remanufacturing a composite resin having high tensile strength and high rigidity into a remanufactured molded product having the same tensile strength and rigidity which includes the steps of: providing a molded product of a composite resin of thermoplastic resin and liquid crystal polymer having a crystal transition point higher than a minimum moldable temperature of the thermoplastic resin; crushing the composite resin into particles or pieces; heating the particles or pieces at a temperature higher than the transition temperature of the liquid crystal polymer to obtain a molten composite resin by using an injection forming apparatus; extruding the molten composite resin at a temperature higher than the transition temperature of the liquid crystal polymer to obtain a moldable composite material of a sheet or strand form; and forming the moldable composite material into a molded product in a given shape at a temperature lower than the transition temperature of the liquid crystal polymer.

摘要翻译： 一种将具有高拉伸强度和高刚性的复合树脂再制造成具有相同拉伸强度和刚性的再制造模制品的方法，包括以下步骤：提供热塑性树脂的复合树脂和具有晶体的液晶聚合物的模制产品 过渡点高于热塑性树脂的最低成型温度; 将复合树脂粉碎成颗粒或碎片; 在高于液晶聚合物的转变温度的温度下加热所述颗粒，通过使用注射成型装置获得熔融的复合树脂; 在高于液晶聚合物的转变温度的温度下挤出熔融的复合树脂以获得片状或绞合形式的可成型复合材料; 在低于液晶聚合物的转变温度的温度下将成型的复合材料成形为具有规定形状的成型品。

公开(公告)号：US08749010B2

公开(公告)日：2014-06-10

申请号：US13426097

申请日：2012-03-21

申请人： Ikuo Fujiwara ,  Hitoshi Yagi ,  Keita Sasaki

发明人： Ikuo Fujiwara ,  Hitoshi Yagi ,  Keita Sasaki

IPC分类号： H01L27/146 ,  H01L31/058

CPC分类号： H04N5/33 ,  G01J5/024 ,  G01J5/10

摘要： According to one embodiment, an infrared imaging device includes a substrate, a detecting section, an interconnection, a contact plug and a support beam. The detecting section is provided above the substrate and includes an infrared absorbing section and a thermoelectric converting section. The interconnection is provided on an interconnection region of the substrate and is configured to read the electrical signal. The contact plug is extends from the interconnection toward a connecting layer provided in the interconnection region. The contact plug is electrically connected to the interconnection and the connecting layer. The support beam includes a support beam interconnection and supports the detecting section above the substrate. The support beam interconnection transmits the electrical signal from the thermoelectric converting section to the interconnection.

摘要翻译： 根据一个实施例，红外成像装置包括基板，检测部分，互连件，接触插塞和支撑梁。 检测部设置在基板的上方，并且包括红外线吸收部和热电转换部。 互连设置在基板的互连区域上，并被配置为读取电信号。 接触插头从互连延伸到设置在互连区域中的连接层。 接触插头电连接到互连和连接层。 支撑梁包括支撑梁互连并且支撑基板上方的检测部分。 支撑束互连将电信号从热电转换部传送到互连。

公开(公告)号：US08629396B2

公开(公告)日：2014-01-14

申请号：US13235388

申请日：2011-09-18

申请人： Masako Ogata ,  Ikuo Fujiwara ,  Hiroto Honda ,  Kazuhiro Suzuki ,  Honam Kwon ,  Risako Ueno ,  Hitoshi Yagi ,  Masaki Atsuta ,  Koichi Ishii ,  Keita Sasaki ,  Hideyuki Funaki

发明人： Masako Ogata ,  Ikuo Fujiwara ,  Hiroto Honda ,  Kazuhiro Suzuki ,  Honam Kwon ,  Risako Ueno ,  Hitoshi Yagi ,  Masaki Atsuta ,  Koichi Ishii ,  Keita Sasaki ,  Hideyuki Funaki

IPC分类号： H01L27/146

CPC分类号： H01L27/14649 ,  H01L27/14632 ,  H01L27/14687

摘要： An uncooled infrared imaging element includes a pixel region, a device region, and a support substrate. The pixel region includes heat-sensitive pixels. The heat-sensitive pixels are arranged in a matrix and change current-voltage characteristics thereof in accordance with receiving amounts of infrared. The device region includes at least one of a drive circuit and a readout circuit which includes a MOS transistor. The drive circuit drives the heat-sensitive pixels. The readout circuit detects signals of the heat-sensitive pixels. The support substrate is provided with a cavity region to be under pixel region and the MOS transistor.

摘要翻译： 非制冷红外成像元件包括像素区域，器件区域和支撑衬底。 像素区域包括热敏像素。 热敏像素被布置成矩阵并且根据接收到的红外线量来改变其电流 - 电压特性。 器件区域包括驱动电路和包括MOS晶体管的读出电路中的至少一个。 驱动电路驱动热敏像素。 读出电路检测热敏像素的信号。 支撑基板设置有在像素区域下方的空腔区域和MOS晶体管。

公开(公告)号：US20120061791A1

公开(公告)日：2012-03-15

申请号：US13069610

申请日：2011-03-23

申请人： Masaki Atsuta ,  Hideyuki Funaki ,  Keita Sasaki

发明人： Masaki Atsuta ,  Hideyuki Funaki ,  Keita Sasaki

IPC分类号： H01L29/66

CPC分类号： G01J5/10 ,  G01J5/02 ,  G01J5/0225 ,  G01J5/023 ,  G01J5/024 ,  G01J5/08 ,  G01J5/0853 ,  G01J5/20

摘要： According to one embodiment, an infrared detection device includes a detection element. The detection element includes a semiconductor substrate, a signal interconnect section, a detection cell and a support section. The semiconductor substrate is provided with a cavity on a surface of the semiconductor substrate. The signal interconnect section is provided in a region surrounding the cavity of the semiconductor substrate. The detection cell spaced from the semiconductor substrate above the cavity includes a thermoelectric conversion layer, and an absorption layer. The absorption layer is laminated with the thermoelectric conversion layer, and provided with a plurality of holes each having a shape whose upper portion is widened. The support section holds the detection cell above the cavity and connects the signal interconnect section and the detection cell.

摘要翻译： 根据一个实施例，红外检测装置包括检测元件。 检测元件包括半导体衬底，信号互连部分，检测单元和支撑部分。 半导体衬底在半导体衬底的表面上设置有空腔。 信号互连部分设置在围绕半导体衬底的空腔的区域中。 与空腔上方的半导体衬底间隔开的检测单元包括热电转换层和吸收层。 吸收层与热电转换层层叠，并且设置有多个孔，每个孔具有上部加宽的形状。 支撑部分将检测单元保持在空腔上方并连接信号互连部分和检测单元。