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    Magnetic memory device
    21.
    发明授权
    Magnetic memory device 有权
    磁存储器件

    公开(公告)号：US06473336B2

    公开(公告)日：2002-10-29

    申请号：US09735629

    申请日：2000-12-14

    申请人： Kentaro Nakajima ,  Koichiro Inomata ,  Yoshiaki Saito ,  Masayuki Sagoi

    发明人： Kentaro Nakajima ,  Koichiro Inomata ,  Yoshiaki Saito ,  Masayuki Sagoi

    IPC分类号： G11C1714

    CPC分类号： H01L27/228 ,  G11C11/16 ,  H01L27/224

    摘要： A magnetic memory device comprises a memory cell assembled by first and second tunnel junction portions and a switch, each of the first and second tunnel junction portions being formed of a stack of a pinned layer in which a magnetization direction is fixed and a record layer in which a magnetization direction changes depending on an external magnetic field. A first data line is connected to a first end of the first tunnel junction portion. A second data line is connected to the first end of the second tunnel junction portion. A bit line is connected to the second end of the first tunnel junction portion and the second end of the second tunnel junction portion via the switch.

    摘要翻译： 磁存储器件包括由第一和第二隧道结部分和开关组装的存储器单元，第一和第二隧道结部分中的每一个由固定层的堆叠形成，其中磁化方向固定在其中，并且记录层 其磁化方向根据外部磁场而变化。 第一数据线连接到第一隧道结部分的第一端。 第二数据线连接到第二隧道结部分的第一端。 位线经由开关连接到第一隧道结部分的第二端和第二隧道结部分的第二端。

    Magnetic memory device and method of manufacturing the same
    22.
    发明授权
    Magnetic memory device and method of manufacturing the same 有权
    磁记忆体装置及其制造方法

    公开(公告)号：US07291506B2

    公开(公告)日：2007-11-06

    申请号：US11171323

    申请日：2005-07-01

    申请人： Kentaro Nakajima ,  Minoru Amano ,  Tomomasa Ueda ,  Shigeki Takahashi

    发明人： Kentaro Nakajima ,  Minoru Amano ,  Tomomasa Ueda ,  Shigeki Takahashi

    IPC分类号： H01L21/00

    CPC分类号： C23F4/00 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3254 ,  H01F41/308 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

    摘要： A method of manufacturing a magnetic memory device includes forming an insulation layer on a substrate, forming a lower electrode on the insulation layer, forming a magneto-resistive film on an upper surface of the lower electrode, the magneto-resistive film including an insulation barrier layer and a plurality of magnetic films stacked on both sides of the insulation barrier layer, stacking a mask layer on the magneto-resistive film, performing ion etching on the magneto-resistive film, using the mask layer as a mask, thereby forming a magneto-resistive element, forming an insulation film on upper surfaces of the mask, the magneto-resistive element and the lower electrode, and etching the insulation film with an ion beam such that a side surface of the magneto-resistive element is exposed.

    摘要翻译： 一种制造磁存储器件的方法包括在衬底上形成绝缘层，在绝缘层上形成下电极，在下电极的上表面上形成磁阻膜，该磁阻膜包括绝缘屏障 层和层叠在绝缘阻挡层的两侧的多个磁性膜，使用掩模层作为掩模将掩模层堆叠在磁阻膜上，对磁阻膜进行离子蚀刻，从而形成磁 电阻元件，在掩模的上表面，磁阻元件和下电极上形成绝缘膜，并用离子束蚀刻绝缘膜，使得磁阻元件的侧表面露出。

    Solid-state magnetic memory using ferromagnetic tunnel junctions
    26.
    发明授权
    Solid-state magnetic memory using ferromagnetic tunnel junctions 失效
    使用铁磁隧道结的固态磁存储器

    公开(公告)号：US06522573B2

    公开(公告)日：2003-02-18

    申请号：US09893612

    申请日：2001-06-29

    申请人： Yoshiaki Saito ,  Kentaro Nakajima ,  Minoru Amano

    发明人： Yoshiaki Saito ,  Kentaro Nakajima ,  Minoru Amano

    IPC分类号： G11C1100

    CPC分类号： H01L27/224 ,  B82Y10/00 ,  G11C11/15

    摘要： According to the present invention, there is provided a solid-state magnetic memory including a semiconductor substrate, a ferromagnetic tunnel junction element facing the semiconductor substrate, first and second wirings sandwiching the ferromagnetic tunnel junction elements from both sides thereof, a third wiring facing the ferromagnetic tunnel junction element, and a diode at least part of which is formed in a surface region of the semiconductor substrate.

    摘要翻译： 根据本发明，提供了一种包括半导体衬底，面向半导体衬底的铁磁隧道结元件的固态磁存储器，从其两侧将铁磁隧道结元件夹在中间的第一和第二配线，面向 铁磁隧道结元件，以及二极管，其至少一部分形成在半导体衬底的表面区域中。

    Semiconductor memory device having memory cells including ferromagnetic films and control method thereof
    27.
    发明授权
    Semiconductor memory device having memory cells including ferromagnetic films and control method thereof 失效
    具有包含铁磁膜的存储单元的半导体存储器件及其控制方法

    公开(公告)号：US07035137B2

    公开(公告)日：2006-04-25

    申请号：US10807454

    申请日：2004-03-24

    申请人： Yoshihisa Iwata ,  Kentaro Nakajima ,  Masayuki Sagoi ,  Yuui Shimizu

    发明人： Yoshihisa Iwata ,  Kentaro Nakajima ,  Masayuki Sagoi ,  Yuui Shimizu

    IPC分类号： G11C11/00 ,  G11C7/04

    CPC分类号： G11C11/15

    摘要： A semiconductor memory device comprises word lines, bit lines, memory cells, a row decoder, a column decoder, and a write circuit. The word lines are formed along a first direction. The bit lines are formed along a second direction. Memory cells include magneto-resistive elements and are arranged at intersections of the word lines and the bit lines. The row decoder selects at least one of the word lines. The column decoder selects at least one of the bit lines. The write circuit supplies first and second write currents to a selected word line and selected bit line respectively and writes data into a selected memory cell arranged at the intersection of the selected word line and the selected bit line. The write circuit changes the current values of the first and second write currents according to a temperature change.

    摘要翻译： 半导体存储器件包括字线，位线，存储单元，行解码器，列解码器和写电路。 字线沿着第一方向形成。 位线沿着第二方向形成。 存储单元包括磁阻元件，并且布置在字线和位线的交点处。 行解码器选择至少一个字线。 列解码器选择至少一个位线。 写入电路分别向所选择的字线和所选位线提供第一和第二写入电流，并将数据写入布置在所选择的字线和所选位线的交点处的选定存储单元。 写入电路根据温度变化改变第一和第二写入电流的电流值。

    Semiconductor memory device having memory cells including ferromagnetic films and control method thereof
    28.
    发明申请
    Semiconductor memory device having memory cells including ferromagnetic films and control method thereof 失效
    具有包含铁磁膜的存储单元的半导体存储器件及其控制方法

    公开(公告)号：US20050036362A1

    公开(公告)日：2005-02-17

    申请号：US10807454

    申请日：2004-03-24

    申请人： Yoshihisa Iwata ,  Kentaro Nakajima ,  Masayuki Sagoi ,  Yuui Shimizu

    发明人： Yoshihisa Iwata ,  Kentaro Nakajima ,  Masayuki Sagoi ,  Yuui Shimizu

    IPC分类号： G11C11/15 ,  G11C29/04 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  G11C11/00

    CPC分类号： G11C11/15

    摘要： A semiconductor memory device comprises word lines, bit lines, memory cells, a row decoder, a column decoder, and a write circuit. The word lines are formed along a first direction. The bit lines are formed along a second direction. Memory cells include magneto-resistive elements and are arranged at intersections of the word lines and the bit lines. The row decoder selects at least one of the word lines. The column decoder selects at least one of the bit lines. The write circuit supplies first and second write currents to a selected word line and selected bit line respectively and writes data into a selected memory cell arranged at the intersection of the selected word line and the selected bit line. The write circuit changes the current values of the first and second write currents according to a temperature change.

    摘要翻译： 半导体存储器件包括字线，位线，存储单元，行解码器，列解码器和写电路。 字线沿着第一方向形成。 位线沿着第二方向形成。 存储单元包括磁阻元件，并且布置在字线和位线的交点处。 行解码器选择至少一个字线。 列解码器选择至少一个位线。 写入电路分别向所选择的字线和所选位线提供第一和第二写入电流，并将数据写入布置在所选择的字线和所选位线的交点处的选定存储单元。 写入电路根据温度变化改变第一和第二写入电流的电流值。

    Magnetic storage apparatus having dummy magnetoresistive effect element and manufacturing method thereof
    29.
    发明授权
    Magnetic storage apparatus having dummy magnetoresistive effect element and manufacturing method thereof 失效
    具有虚拟磁阻效应元件的磁存储装置及其制造方法

    公开(公告)号：US06916677B2

    公开(公告)日：2005-07-12

    申请号：US10798571

    申请日：2004-03-12

    申请人： Kentaro Nakajima ,  Minoru Amano

    发明人： Kentaro Nakajima ,  Minoru Amano

    IPC分类号： H01L27/105 ,  G11C7/00 ,  G11C11/15 ,  G11C11/16 ,  H01L21/00 ,  H01L21/8246 ,  H01L27/22 ,  H01L29/76 ,  H01L43/08

    CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/16

    摘要： A magnetic memory device includes a memory cell portion, a peripheral circuit portion positioned in the vicinity of the memory cell portion, a plurality of first magnetoresistive effect elements which are arranged in the memory cell portion and function as memory elements, and a plurality of second magnetoresistive effect elements which are arranged in at least a part of the peripheral circuit portion and function as dummies, wherein a sum total of occupying areas of the second magnetoresistive effect elements is 5% to 80% of the peripheral circuit portion.

    摘要翻译： 磁存储器件包括存储单元部分，位于存储单元部分附近的外围电路部分，多个第一磁阻效应元件，被布置在存储单元部分中并用作存储元件，并且多个第二 磁阻效应元件布置在外围电路部分的至少一部分中并用作虚拟物，其中第二磁阻效应元件的占据面积的总和为外围电路部分的5％至80％。