摘要:
In a semiconductor memory device, a decoder circuit is located between first and second memory cell arrays. A sequence of driver circuits in the decoder circuit is provided as driver circuits common to the first and second memory cell arrays. The output terminal of the driver circuit is connected directly with a data input/output portion for the first memory cell array and connected with another data input/output portion for the second memory cell array through wirings traversing the decoder circuit.
摘要:
In a semiconductor integrated circuit comprising an internal circuit, a device for receiving a chip select signal from the outside, a device for receiving an input signal from the outside, and a voltage detecting circuit for detecting whether or not the potential of the input signal is higher than a reference potential; the voltage detecting circuit comprises a first device for differentially comparing the potential of the input signal with the reference potential and generating an output potential in accordance with the results of the comparison, a second device for detecting a predetermined edge of the chip select signal so as to trigger the first device, and a third device for latching the output potential of the first device to the third device when the first device is triggered by the second device, the internal circuit being switched from a first mode to a second mode, or vice versa, in accordance with the output potential of the third device.
摘要:
A program analysis support device that can freely combine program analysis conditions and can realize desired program analysis. An analysis condition setting part inputs a program analysis condition in a form of a conditional equation (analysis command, an analysis subject, and analysis condition) having an inherent equation number. A POU list extraction processing executing part executes an analysis command that reads a program to generate a collection of POUs serving as analysis subjects constituting the program, and a variable use list extraction processing executing part executes an analysis command that extracts a cross-reference of a variable to extract a cross-reference of a variable to the POU collection serving as the analysis subject. Both the parts further extract a cross-reference of a variable to another POU collection. An AND processing part further performs processing of a logical product of the cross-references of both the variables and outputs a result thereof to an analysis result display part.
摘要:
A liquid crystal composition for use in a DAP mode liquid crystal display device of a homeotropic structure type contains at least one kind of predetermined tolan derivative. The liquid crystal composition is used for a liquid crystal display device of an active-matrix drive type. The liquid crystal composition is also used for a projection type display. The content of the predetermined tolan derivative is in a range of 3 wt % to 20 wt %.
摘要:
A program analysis support device that can freely combine program analysis conditions and can realize desired program analysis. An analysis condition setting part inputs a program analysis condition in a form of a conditional equation (analysis command, an analysis subject, and analysis condition) having an inherent equation number. A POU list extraction processing executing part executes an analysis command that reads a program to generate a collection of POUs serving as analysis subjects constituting the program, and a variable use list extraction processing executing part executes an analysis command that extracts a cross-reference of a variable to extract a cross-reference of a variable to the POU collection serving as the analysis subject. Both the parts further extract a cross-reference of a variable to another POU collection. An AND processing part further performs processing of a logical product of the cross-references of both the variables and outputs a result thereof to an analysis result display part.
摘要:
A semiconductor memory device includes a write data transfer unit; a plurality of groups of sense amplifiers; a plurality of word lines; and a plurality of pairs of bit lines. Each of the pairs of bit lines includes a pair of inside bit lines, extending between the write data transfer unit and each of the sense amplifiers, and a pair of outside bit lines, extending from each of the sense amplifiers to the side opposite the side of the write data transfer unit. A plurality of memory cells is connected between the word lines and the pairs of bit lines, respectively. The drive timing of a selected one of the groups of sense amplifiers, connected to the selected one of pairs of bit lines on which the transfer of the write data is being performed, is delayed when compared with the drive timing of the sense amplifiers connected to the remaining pairs of bit lines on which the transfer of the write data is not being performed. The write data is transferred from the write data transfer unit to a part of the memory cells connected to a selected one of outside bit lines connected to the selected one of the groups of sense amplifiers. Further, it is also possible to stop the drive of the selected one of the groups of sense amplifiers connected to the selected one of pairs of bit lines on which the transfer of the write data is being performed, instead of delaying the drive timing of the selected one of the groups of sense amplifiers.