公开(公告)号：US08604469B2

公开(公告)日：2013-12-10

申请号：US12464920

申请日：2009-05-13

申请人： Woo-Geun Lee ,  Jae-Hyoung Youn ,  Ki-Won Kim ,  Young-Wook Lee ,  Jong-In Kim

发明人： Woo-Geun Lee ,  Jae-Hyoung Youn ,  Ki-Won Kim ,  Young-Wook Lee ,  Jong-In Kim

IPC分类号： H01L29/10

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/78696

摘要： A thin film transistor array panel includes a substrate, a gate line formed on the substrate and including a gate electrode, a gate insulating layer formed on the gate line, a semiconductor formed on the gate insulating layer and including a channel of a thin film transistor, a data line formed on the semiconductor and including a source electrode and a drain electrode formed on the semiconductor and opposite to the source electrode with respect to the channel of the thin film transistor, wherein the channel of the thin film transistor covers both side surfaces of the gate electrode.

摘要翻译： 薄膜晶体管阵列面板包括基板，形成在基板上的栅极线，包括栅极电极，形成在栅极线上的栅极绝缘层，形成在栅极绝缘层上并包括薄膜晶体管的沟道的半导体 ，形成在半导体上的数据线，包括相对于薄膜晶体管的沟道形成在半导体上并与源电极相对的源电极和漏电极，其中薄膜晶体管的沟道覆盖两个侧表面 的栅电极。

公开(公告)号：US08077275B2

公开(公告)日：2011-12-13

申请号：US12408213

申请日：2009-03-20

申请人： Byung-Duk Yang ,  Jang-Soo Kim ,  Woo-Geun Lee ,  Ki-Won Kim ,  Sang-Ki Kwak ,  Hyang-Shik Kong ,  Sang-Hun Lee

发明人： Byung-Duk Yang ,  Jang-Soo Kim ,  Woo-Geun Lee ,  Ki-Won Kim ,  Sang-Ki Kwak ,  Hyang-Shik Kong ,  Sang-Hun Lee

IPC分类号： G02F1/1339 ,  G02F1/1335

CPC分类号： G02F1/136204 ,  G02F1/13392 ,  G02F1/1341 ,  G02F2001/133388

摘要： A display substrate includes a transistor layer, a plurality of color filters, a first blocking member, a supporting member, a circuit part, a second blocking member and a protruding member. The first blocking member is disposed between different color filters. The supporting member maintains a distance between a base substrate and a substrate facing the base substrate. A circuit part is disposed in a peripheral area surrounding a display area, and the circuit part includes a metal pattern and a contact electrode in contact with the metal pattern. The second blocking member includes substantially the same material as the first blocking member and the second blocking member covers the circuit part. The protruding member includes substantially the same material as the second blocking member, and is integrally formed with the second blocking member.

摘要翻译： 显示基板包括晶体管层，多个滤色器，第一阻挡构件，支撑构件，电路部分，第二阻挡构件和突出构件。 第一阻挡构件设置在不同的滤色器之间。 支撑构件保持基底基板和面向基底基板的基板之间的距离。 电路部分设置在围绕显示区域的周边区域中，并且电路部分包括与金属图案接触的金属图案和接触电极。 第二阻挡构件包括与第一阻挡构件基本相同的材料，并且第二阻挡构件覆盖电路部分。 突出构件包括与第二阻挡构件基本相同的材料，并且与第二阻挡构件一体地形成。

公开(公告)号：US20110297930A1

公开(公告)日：2011-12-08

申请号：US13151102

申请日：2011-06-01

申请人： Seung-Ha CHOI ,  Kyoung-Jae Chung ,  Woo-Geun Lee

发明人： Seung-Ha CHOI ,  Kyoung-Jae Chung ,  Woo-Geun Lee

IPC分类号： H01L29/786 ,  H01L21/44

CPC分类号： H01L21/76804 ,  G02F1/133345 ,  G02F1/136227 ,  G02F1/136286 ,  H01L21/76816 ,  H01L27/1225 ,  H01L27/1244 ,  H01L27/1248 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

摘要： A TFT display panel having a high charge mobility and making it possible to obtain uniform electric characteristics with respect to a large-area display is provided as well as a manufacturing method thereof. A TFT display panel includes a gate electrode formed on an insulation substrate, a first gate insulting layer formed of SiNx on the gate electrode, a second gate insulting layer formed of SiOx on the first gate insulting layer, an oxide semiconductor layer formed to overlap the gate electrode and having a channel part, and a passivation layer formed of SiOx on the oxide semiconductor layer and the gate electrode, and the passivation layer includes a contact hole exposing the drain electrode. The contact hole has a shape in which the passivation layer of a portion directly exposed together with a metal occupies an area smaller than the upper passivation layer.

摘要翻译： 提供具有高电荷迁移率并且可以获得相对于大面积显示器的均匀电特性的TFT显示面板及其制造方法。 TFT显示面板包括形成在绝缘基板上的栅极电极，栅极上由SiNx形成的第一栅极绝缘层，在第一栅极绝缘层上由SiOx形成的第二栅极绝缘层，形成为与栅极电极重叠的氧化物半导体层 栅电极，并具有通道部分，以及由氧化物半导体层和栅电极上的SiO x形成的钝化层，并且钝化层包括暴露漏电极的接触孔。 接触孔具有直接与金属一起暴露的部分的钝化层占据比上钝化层小的形状。

公开(公告)号：US20110284852A1

公开(公告)日：2011-11-24

申请号：US13049783

申请日：2011-03-16

申请人： Ki-Won KIM ,  Kap-Soo Yoon ,  Woo-Geun Lee ,  Yeong-Keun Kwon ,  Hye-Young Ryu ,  Jin-Won Lee ,  Hyun-Jung Lee

发明人： Ki-Won KIM ,  Kap-Soo Yoon ,  Woo-Geun Lee ,  Yeong-Keun Kwon ,  Hye-Young Ryu ,  Jin-Won Lee ,  Hyun-Jung Lee

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/78645 ,  H01L29/78648

摘要： A thin-film transistor includes a semiconductor pattern, a first gate electrode, a source electrode, a drain electrode and a second gate electrode. The semiconductor pattern is formed on a substrate. A first conductive layer has a pattern that includes the first gate electrode which is electrically insulated from the semiconductor pattern. A second conductive layer has a pattern that includes a source electrode electrically connected to the semiconductor pattern, a drain electrode spaced apart from the source electrode, and a second gate electrode electrically connected to the first gate electrode. The second gate electrode is electrically insulated from the semiconductor pattern, the source electrode and the drain electrode.

摘要翻译： 薄膜晶体管包括半导体图案，第一栅电极，源电极，漏电极和第二栅电极。 半导体图案形成在基板上。 第一导电层具有包括与半导体图案电绝缘的第一栅电极的图案。 第二导电层具有图案，其包括电连接到半导体图案的源电极，与源电极间隔开的漏电极和与第一栅电极电连接的第二栅电极。 第二栅电极与半导体图案，源电极和漏电极电绝缘。

公开(公告)号：US20110175088A1

公开(公告)日：2011-07-21

申请号：US13004665

申请日：2011-01-11

申请人： Jong In Kim ,  Young-Wook Lee ,  Jean-Ho Song ,  Jae-Hyoung Yoon ,  Sung-Ryul Kim ,  Byeong-Beom Kim ,  Je-Hyeong Park ,  Woo-Geun Lee

发明人： Jong In Kim ,  Young-Wook Lee ,  Jean-Ho Song ,  Jae-Hyoung Yoon ,  Sung-Ryul Kim ,  Byeong-Beom Kim ,  Je-Hyeong Park ,  Woo-Geun Lee

IPC分类号： H01L29/786 ,  H01L21/28

CPC分类号： H01L27/1225 ,  H01L27/124 ,  H01L27/1288

摘要： A thin-film transistor (TFT) substrate having reduced defects is fabricated using a reduced number of masks. The TFT substrate includes gate wiring formed on a substrate. The gate wiring includes a gate electrode. A semiconductor pattern is formed on the gate wiring. An etch-stop pattern is formed on the semiconductor pattern. Data wiring includes a source electrode which is formed on the semiconductor pattern and the etch-stop pattern. Each of the gate wiring and the data wiring includes a copper-containing layer and a buffer layer formed on or under the copper-containing layer.

摘要翻译： 使用减少数量的掩模制造具有减少的缺陷的薄膜晶体管（TFT）基板。 TFT基板包括形成在基板上的栅极布线。 栅极布线包括栅电极。 在栅极布线上形成半导体图形。 在半导体图案上形成蚀刻停止图案。 数据布线包括形成在半导体图案上的源电极和蚀刻停止图案。 栅极布线和数据布线中的每一个包括在含铜层上形成的含铜层和缓冲层。

公开(公告)号：US07928440B2

公开(公告)日：2011-04-19

申请号：US12332117

申请日：2008-12-10

申请人： Woo-Geun Lee ,  Jae-Hyoung Youn ,  Ki-Won Kim ,  Jong-In Kim

发明人： Woo-Geun Lee ,  Jae-Hyoung Youn ,  Ki-Won Kim ,  Jong-In Kim

IPC分类号： H01L29/04 ,  H01L29/15 ,  H01L27/12

CPC分类号： H01L27/124 ,  G02F1/136286

摘要： A display substrate includes a base substrate, a gate line, a gate insulation layer, a data line, a thin-film transistor (TFT) and a pixel electrode. The gate line is extended in a first direction on the base substrate. The gate insulation layer is formed on the base substrate to cover the gate line. The data line is extended in a second direction and intersects the gate line at an intersecting portion. At the intersecting portion, the data line is separated from the gate line by an air gap. In another embodiment, the data line also includes at least one etching hole extending to the air gap. The TFT is electrically connected to the data and the gate lines. The pixel electrode is electrically connected to the TFT.

摘要翻译： 显示基板包括基底基板，栅极线，栅极绝缘层，数据线，薄膜晶体管（TFT）和像素电极。 栅极线在基底基板上沿第一方向延伸。 栅极绝缘层形成在基底基板上以覆盖栅极线。 数据线在第二方向上延伸并且在相交部分与栅极线相交。 在交叉部分，数据线通过气隙与栅极线分离。 在另一个实施例中，数据线还包括延伸到气隙的至少一个蚀刻孔。 TFT与数据和栅极线电连接。 像素电极电连接到TFT。

公开(公告)号：US20100059745A1

公开(公告)日：2010-03-11

申请号：US12499009

申请日：2009-07-07

申请人： Kap-Soo Yoon ,  Ki-Won Kim ,  Sung-Ryul Kim ,  Sung-Hoon Yang ,  Woo-Geun Lee

发明人： Kap-Soo Yoon ,  Ki-Won Kim ,  Sung-Ryul Kim ,  Sung-Hoon Yang ,  Woo-Geun Lee

IPC分类号： H01L29/786 ,  H01L21/34

CPC分类号： H01L27/1248 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/4908 ,  H01L29/7869

摘要： Provided are a thin-film transistor (TFT) display panel having improved electrical properties that can be fabricated time-effectively and a method of fabricating the TFT display panel. The TFT display panel includes: gate wirings which are formed on an insulating substrate; oxide active layer patterns which are formed on the gate wirings; data wirings which are formed on the oxide active layer patterns to cross the gate wirings; a passivation layer which is formed on the oxide active layer patterns and the data wirings and is made of silicon nitride (SiNx); and a pixel electrode which is formed on the passivation layer.

摘要翻译： 提供了一种薄膜晶体管（TFT）显示面板，其具有可以有效制造的改进的电气特性和制造TFT显示面板的方法。 TFT显示面板包括：形成在绝缘基板上的栅极布线; 形成在栅极布线上的氧化物有源层图案; 形成在氧化物有源层图案上以跨过栅极布线的数据布线; 形成在氧化物有源层图案和数据布线上并由氮化硅（SiNx）制成的钝化层; 以及形成在钝化层上的像素电极。

公开(公告)号：US20090033820A1

公开(公告)日：2009-02-05

申请号：US12152619

申请日：2008-05-14

申请人： Woo-Geun Lee ,  Shi-Yul Kim ,  Jae-Hyoung Youn ,  Young-Wook Lee

发明人： Woo-Geun Lee ,  Shi-Yul Kim ,  Jae-Hyoung Youn ,  Young-Wook Lee

IPC分类号： G02F1/1343 ,  G02F1/133

CPC分类号： G02F1/136286 ,  G02F1/136209 ,  G02F2001/13606 ,  G02F2001/136218 ,  G02F2001/136222 ,  G02F2201/40

摘要： A liquid crystal display to prevent light leakage with an improvement of aperture ratio and a reduction of load of a data line is provided. The liquid crystal display includes a gate line and a storage electrode line formed on a insulating substrate and apart from each other, a first data line and a second data line intersecting the gate line, a first pixel electrode defined by the gate line and the first data line, and a second pixel electrode defined by the gate line and the second data line and neighboring the first pixel electrode. Also, a blocking electrode between the first pixel electrode and the second pixel electrode is included, wherein at least portion of the first data line is disposed under the first pixel electrode, and at least portion of the blocking electrode is disposed under the second pixel electrode and apart from the first data line.

摘要翻译： 提供了一种液晶显示器，用于防止光泄漏，同时提高了开口率和减少了数据线的负载。 液晶显示器包括形成在绝缘基板上并且彼此分开的栅极线和存储电极线，与栅极线相交的第一数据线和第二数据线，由栅极线和第一栅极线限定的第一像素电极 数据线和由栅极线和第二数据线限定并与第一像素电极相邻的第二像素电极。 此外，包括第一像素电极和第二像素电极之间的阻挡电极，其中第一数据线的至少一部分设置在第一像素电极下方，并且阻挡电极的至少一部分设置在第二像素电极下方 并且除了第一条数据线之外。

公开(公告)号：US20080237037A1

公开(公告)日：2008-10-02

申请号：US12035086

申请日：2008-02-21

申请人： Chong-Chul CHAI ,  Mee-Hye Jung ,  Woo-Geun Lee ,  Woo-Seok Jeon ,  Young-Wook Lee ,  Jung-In Park ,  Jun-Hyung Souk ,  Won-Kie Chang ,  Shi-Yul Kim

发明人： Chong-Chul CHAI ,  Mee-Hye Jung ,  Woo-Geun Lee ,  Woo-Seok Jeon ,  Young-Wook Lee ,  Jung-In Park ,  Jun-Hyung Souk ,  Won-Kie Chang ,  Shi-Yul Kim

IPC分类号： G03F9/00

CPC分类号： G03F1/36 ,  G03F1/00 ,  G03F1/50

摘要： A mask includes a transparent substrate, a light-blocking layer and a halftone layer. The light-blocking layer includes a source electrode pattern portion including a first electrode portion, a second electrode portion and a third electrode portion, and a drain electrode pattern portion disposed between the second electrode portion and the third electrode portion. The halftone layer includes a halftone portion corresponding to a spaced-apart portion between the source electrode pattern portion and the drain electrode pattern portion, and a dummy halftone portion more protrusive than ends of the second electrode portion and the third electrode portion. Thus, a photoresist pattern corresponding to a channel portion of a thin film transistor (TFT) may be formed with a uniform thickness, to thereby prevent an excessive etching of the channel portion.

摘要翻译： 掩模包括透明基板，遮光层和半色调层。 遮光层包括包括第一电极部分，第二电极部分和第三电极部分的源电极图案部分和设置在第二电极部分和第三电极部分之间的漏电极图案部分。 半色调层包括对应于源电极图案部分和漏电极图案部分之间的间隔部分的半色调部分和比第二电极部分和第三电极部分的端部更突出的虚拟半色调部分。 因此，可以形成对应于薄膜晶体管（TFT）的沟道部分的光致抗蚀剂图案，其厚度均匀，从而防止通道部分的过度蚀刻。

公开(公告)号：US20080073718A1

公开(公告)日：2008-03-27

申请号：US11861113

申请日：2007-09-25

申请人： Young-Wook LEE ,  Woo-Geun Lee ,  Jung-In Park ,  Youn-Hee Cha

发明人： Young-Wook LEE ,  Woo-Geun Lee ,  Jung-In Park ,  Youn-Hee Cha

IPC分类号： H01L27/12 ,  H01L21/84

CPC分类号： H01L29/41733 ,  H01L27/124 ,  H01L27/1288

摘要： A mask that is capable of forming a thin-film transistor (TFT) with improved electrical characteristics is presented. The mask includes a drain mask pattern, a source mask pattern and a light-adjusting pattern. The drain mask pattern blocks light for forming a drain electrode. The source mask pattern blocks light for forming a source electrode and faces the drain mask pattern. A distance between the drain and source mask patterns is no more than the resolution of an exposing device. The light-adjusting pattern is formed between end portions of the source mask pattern and the drain mask pattern to block at least some light from entering a space between the source and drain mask patterns.

摘要翻译： 提出了能够形成具有改善的电特性的薄膜晶体管（TFT）的掩模。 掩模包括漏极掩模图案，源掩模图案和调光图案。 漏极掩模图案阻挡用于形成漏电极的光。 源极掩模图案阻挡用于形成源极的光并面向漏极掩模图案。 漏极和源极掩模图案之间的距离不大于曝光装置的分辨率。 光源调制图案形成在源掩模图案和漏极掩模图案的端部之间，以阻挡至少一些光进入源极和漏极掩模图案之间的空间。