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    THIN-FILM TRANSISTOR DISPLAY PANEL AND METHOD OF FABRICATING THE SAME
    8.
    发明申请
    THIN-FILM TRANSISTOR DISPLAY PANEL AND METHOD OF FABRICATING THE SAME 有权
    薄膜晶体管显示面板及其制造方法

    公开(公告)号：US20100059745A1

    公开(公告)日：2010-03-11

    申请号：US12499009

    申请日：2009-07-07

    申请人： Kap-Soo Yoon ,  Ki-Won Kim ,  Sung-Ryul Kim ,  Sung-Hoon Yang ,  Woo-Geun Lee

    发明人： Kap-Soo Yoon ,  Ki-Won Kim ,  Sung-Ryul Kim ,  Sung-Hoon Yang ,  Woo-Geun Lee

    IPC分类号： H01L29/786 ,  H01L21/34

    CPC分类号： H01L27/1248 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/4908 ,  H01L29/7869

    摘要： Provided are a thin-film transistor (TFT) display panel having improved electrical properties that can be fabricated time-effectively and a method of fabricating the TFT display panel. The TFT display panel includes: gate wirings which are formed on an insulating substrate; oxide active layer patterns which are formed on the gate wirings; data wirings which are formed on the oxide active layer patterns to cross the gate wirings; a passivation layer which is formed on the oxide active layer patterns and the data wirings and is made of silicon nitride (SiNx); and a pixel electrode which is formed on the passivation layer.

    摘要翻译： 提供了一种薄膜晶体管（TFT）显示面板，其具有可以有效制造的改进的电气特性和制造TFT显示面板的方法。 TFT显示面板包括：形成在绝缘基板上的栅极布线; 形成在栅极布线上的氧化物有源层图案; 形成在氧化物有源层图案上以跨过栅极布线的数据布线; 形成在氧化物有源层图案和数据布线上并由氮化硅（SiNx）制成的钝化层; 以及形成在钝化层上的像素电极。

    Thin-film transistor display panel and method of fabricating the same
    9.
    发明授权
    Thin-film transistor display panel and method of fabricating the same 有权
    薄膜晶体管显示面板及其制造方法

    公开(公告)号：US08022411B2

    公开(公告)日：2011-09-20

    申请号：US12499009

    申请日：2009-07-07

    申请人： Kap-Soo Yoon ,  Ki-Won Kim ,  Sung-Ryul Kim ,  Sung-Hoon Yang ,  Woo-Geun Lee

    发明人： Kap-Soo Yoon ,  Ki-Won Kim ,  Sung-Ryul Kim ,  Sung-Hoon Yang ,  Woo-Geun Lee

    IPC分类号： H01L51/52

    CPC分类号： H01L27/1248 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/4908 ,  H01L29/7869

    摘要： Provided are a thin-film transistor (TFT) display panel having improved electrical properties that can be fabricated time-effectively and a method of fabricating the TFT display panel. The TFT display panel includes: gate wirings which are formed on an insulating substrate; oxide active layer patterns which are formed on the gate wirings; data wirings which are formed on the oxide active layer patterns to cross the gate wirings; a passivation layer which is formed on the oxide active layer patterns and the data wirings and is made of silicon nitride (SiNx); and a pixel electrode which is formed on the passivation layer.

    摘要翻译： 提供了一种薄膜晶体管（TFT）显示面板，其具有可以有效制造的改进的电气特性，以及制造TFT显示面板的方法。 TFT显示面板包括：形成在绝缘基板上的栅极布线; 形成在栅极布线上的氧化物有源层图案; 形成在氧化物有源层图案上以跨过栅极布线的数据布线; 形成在氧化物有源层图案和数据布线上并由氮化硅（SiNx）制成的钝化层; 以及形成在钝化层上的像素电极。

    Thin film transistor substrate, display device having the same and method of manufacturing the display device
    10.
    发明授权
    Thin film transistor substrate, display device having the same and method of manufacturing the display device 有权
    薄膜晶体管基板，具有相同的显示装置和制造显示装置的方法

    公开(公告)号：US08035100B2

    公开(公告)日：2011-10-11

    申请号：US12197573

    申请日：2008-08-25

    申请人： Kap-Soo Yoon ,  Sung-Hoon Yang ,  Byoung-June Kim ,  Czang-Ho Lee ,  Sung-Ryul Kim ,  Hwa-Yeul Oh ,  Jae-Ho Choi ,  Yong-Mo Choi

    发明人： Kap-Soo Yoon ,  Sung-Hoon Yang ,  Byoung-June Kim ,  Czang-Ho Lee ,  Sung-Ryul Kim ,  Hwa-Yeul Oh ,  Jae-Ho Choi ,  Yong-Mo Choi

    IPC分类号： H01L29/12

    CPC分类号： H01L29/7869 ,  H01L27/1225

    摘要： A thin film transistor substrate includes an insulating plate; a gate electrode disposed on the insulating plate; a semiconductor layer comprising a metal oxide, wherein the metal oxide has oxygen defects of less than or equal to 3%, and wherein the metal oxide comprises about 0.01 mole/cm3 to about 0.3 mole/cm3 of a 3d transition metal; a gate insulating layer disposed between the gate electrode and the semiconductor layer; and a source electrode and a drain electrode disposed on the semiconductor layer. Also described is a display substrate. The metal oxide has oxygen defects of less than or equal to 3%, and is doped with about 0.01 mole/cm3 to about 0.3 mole/cm3 of 3d transition metal. The metal oxide comprises indium oxide or titanium oxide. The 3d transition metal includes at least one 3d transition metal selected from the group consisting of chromium, cobalt, nickel, iron, manganese, and mixtures thereof.

    摘要翻译： 薄膜晶体管基板包括绝缘板; 设置在绝缘板上的栅电极; 包含金属氧化物的半导体层，其中所述金属氧化物具有小于或等于3％的氧缺陷，并且其中所述金属氧化物包含约0.01mol / cm 3至约0.3mol / cm 3的3d过渡金属; 设置在所述栅极电极和所述半导体层之间的栅极绝缘层; 以及设置在半导体层上的源电极和漏电极。 还描述了显示基板。 金属氧化物具有小于或等于3％的氧缺陷，并且掺杂有约0.01摩尔/ cm3至约0.3摩尔/ cm3的3d过渡金属。 金属氧化物包括氧化铟或二氧化钛。 3d过渡金属包括选自铬，钴，镍，铁，锰及其混合物中的至少一种3d过渡金属。