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公开(公告)号：US07883387B2
公开(公告)日：2011-02-08
申请号：US11898344
申请日：2007-09-11
申请人： Tsun-Neng Yang , Shan-Ming Lan , Chin-Chen Chiang , Wei-Yang Ma , Chien-Te Ku
发明人： Tsun-Neng Yang , Shan-Ming Lan , Chin-Chen Chiang , Wei-Yang Ma , Chien-Te Ku
摘要： In a method for making a pulsed high-voltage silicon quantum dot fluorescent lamp, an excitation source is made by providing a first substrate, coating the first substrate with a buffer layer of titanium, coating the buffer layer with a catalytic layer of a material selected from a group consisting of nickel, aluminum and platinum and providing a plurality of nanometer discharging elements one the catalytic layer. An emission source is made by providing a second substrate, coating the second substrate with a transparent electrode film of titanium nitride and coating the transparent electrode film with a silicon quantum dot fluorescent film comprising silicon quantum dots. A pulsed high-voltage source is provided between the excitation source and the emission source to generate a pulsed field-effect electric field to cause the nanometer discharging elements to release electrons and accelerate the electrons to excite the silicon quantum dots to emit pulsed visible light.
摘要翻译： 在制造脉冲高压硅量子点荧光灯的方法中，通过提供第一衬底，用钛的缓冲层涂覆第一衬底来制造激发源，用选择的材料的催化层涂覆缓冲层 由镍，铝和铂组成的一组，并提供多个纳米排放元件，一个催化层。 通过提供第二基板来制造发光源，用氮化钛的透明电极膜涂覆第二基板，并且用包含硅量子点的硅量子点荧光膜涂覆透明电极膜。 在激发源和发射源之间提供脉冲高压源以产生脉冲场效应电场，以使纳米放电元件释放电子并加速电子以激发硅量子点发射脉冲的可见光。
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22.发明授权White-light fluorescent lamp having luminescence layer with silicon quantum dots 失效具有硅量子点的发光层的白光荧光灯公开(公告)号：US07569984B2
公开(公告)日：2009-08-04
申请号：US11454949
申请日：2006-06-19
申请人： Tsun-Neng Yang , Chien-Te Ku
发明人： Tsun-Neng Yang , Chien-Te Ku
摘要： A structure is formed by putting glass plates between a luminescence generating device and an electron emitting device so that a vacuum is formed in between. After in putting a high-voltage, an electron beam is emitted from the electron emitting device using low power. In the end, silicon quantum dots in the luminescence generating device are excited to generate a white light. The present invention has a good optoelectronic transformation efficiency.
摘要翻译： 通过将玻璃板置于发光装置和电子发射装置之间形成一种结构，从而在其间形成真空。 放置高电压后，使用低功率的电子发射装置发射电子束。 最后，发光发生器件中的硅量子点被激发以产生白光。 本发明具有良好的光电转换效率。
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23.发明申请WHITE-LIGHT FLUORESCENT LAMP HAVING LUMINESCENCE LAYER WITH SILICON QUANTUM DOTS 失效具有硅量子点的发光层的白色荧光灯公开(公告)号：US20090167146A1
公开(公告)日：2009-07-02
申请号：US11454949
申请日：2006-06-19
申请人： Tsun-Neng Yang , Chien-Te Ku
发明人： Tsun-Neng Yang , Chien-Te Ku
IPC分类号： H01J1/62
摘要： A structure is formed by putting glass plates between a luminescence generating device and an electron emitting device so that a vacuum is formed in between. After in putting a high-voltage, an electron beam is emitted from the electron emitting device using low power. In the end, silicon quantum dots in the luminescence generating device are excited to generate a white light. The present invention has a good optoelectronic transformation efficiency.
摘要翻译： 通过将玻璃板置于发光装置和电子发射装置之间形成一种结构，从而在其间形成真空。 放置高电压后，使用低功率的电子发射装置发射电子束。 最后，发光发生器件中的硅量子点被激发以产生白光。 本发明具有良好的光电转换效率。
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公开(公告)号：US07569864B2
公开(公告)日：2009-08-04
申请号：US11416146
申请日：2006-05-03
申请人： Tsun-Neng Yang , Shan-Ming Lan , Wei-Yang Ma
发明人： Tsun-Neng Yang , Shan-Ming Lan , Wei-Yang Ma
CPC分类号： H01L33/502 , H01L33/0079
摘要： A white light photodiode has a film layer and an ultraviolet (UV) photodiode. The film layer is made of an oxide rich in silicon; and is formed through a chemical vapor deposition. A white light can be generated by exciting the film layer with a UV light from the UV photodiode.
摘要翻译： 白光光电二极管具有膜层和紫外（UV）光电二极管。 膜层由富含硅的氧化物制成; 并通过化学气相沉积形成。 可以通过用UV光电二极管的紫外线激发膜层来产生白光。
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25.发明申请Method of preparing vertically-aligned carbon nanotube under atmospheric and cold-wall heating treatments and making the same 审中-公开在大气和冷壁加热处理下制备垂直排列的碳纳米管的方法和制备方法公开(公告)号：US20080187685A1
公开(公告)日：2008-08-07
申请号：US11703205
申请日：2007-02-07
申请人： Tsun-Neng Yang , Shan-Ming Lan
发明人： Tsun-Neng Yang , Shan-Ming Lan
CPC分类号： C30B25/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/08 , C01B2202/34 , C30B25/183 , C30B29/02 , C30B29/602
摘要： A carbon nanotube is prepared under a non-vacuum environment. An atmospheric pressure chemical vapor deposition (APCVD) is processed with an external high frequency source and a perpendicularly-supplied gas material source for a cold-wall heating treatment. The carbon nanotube is thus obtained with a vertically aligned arrangement at a high speed and a pure quality for production.
摘要翻译： 在非真空环境下制备碳纳米管。 大气压化学气相沉积（APCVD）用外部高频源和垂直供气的气体源进行冷壁加热处理。 因此，以高速和垂直排列的方式获得碳纳米管，并且纯品质用于生产。
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26.发明授权Method for fabricating optical sensitive layer of solar cell having silicon quantum dots 失效制造具有硅量子点的太阳能电池的光敏层的方法公开(公告)号：US07399654B2
公开(公告)日：2008-07-15
申请号：US11367371
申请日：2006-03-06
申请人： Ming-Chang Lin , Tsun-Neng Yang , Shan-Ming Lan , Tsong-Yang Wei , Jyh-Perng Chiu , Wei-Yang Ma
发明人： Ming-Chang Lin , Tsun-Neng Yang , Shan-Ming Lan , Tsong-Yang Wei , Jyh-Perng Chiu , Wei-Yang Ma
IPC分类号： H01L21/00
CPC分类号： H01G9/2045 , B82Y20/00 , Y02E10/542
摘要： A distribution layer of silicon quantum dots are fabricated. After the layer is exposed to sun light for a while, the layer absorbs energy and produces pairs of electron and hole. By limiting the movement of the electrons and their moving directions through the structure obtained, the efficiency of an optoelectronic conversion is enhanced.
摘要翻译： 制造硅量子点的分布层。 在层被阳光照射一段时间之后，该层吸收能量并产生电子和空穴对。 通过限制电子及其移动方向通过所获得的结构，提高了光电转换的效率。
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公开(公告)号：US20080118662A1
公开(公告)日：2008-05-22
申请号：US11603043
申请日：2006-11-22
申请人： Tsun-Neng Yang , Shan-Ming Lan
发明人： Tsun-Neng Yang , Shan-Ming Lan
IPC分类号： C23C16/453
摘要： An amorphous silicon (Si) film is taken to form a metal silicide of Si—Al(aluminum) under a high temperature. Al atoms is diffused into the amorphous Si film for forming the metal silicide of Si—Al as nucleus site. Then through heating and annealing, a microcrystalline or nano-crystalline silicon thin film is obtained. The whole process is only one process and is done in only one reacting chamber.
摘要翻译： 取非晶硅（Si）膜在高温下形成Si-Al（铝）的金属硅化物。 Al原子扩散到非晶Si膜中，用于形成Si-Al的金属硅化物作为核部位。 然后通过加热和退火，获得微晶或纳米晶硅薄膜。 整个过程只是一个过程，只在一个反应室中完成。
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28.发明申请White-light luminescent silicon-nitride component with silicon quantum dots and fabricating method thereof 审中-公开具有硅量子点的白光发光氮化硅组分及其制造方法公开(公告)号：US20070057274A1
公开(公告)日：2007-03-15
申请号：US11221851
申请日：2005-09-09
申请人： Tsun-Neng Yang , Shan-Ming Lan
发明人： Tsun-Neng Yang , Shan-Ming Lan
IPC分类号： H01L33/00
CPC分类号： C09K11/70 , B82Y10/00 , H01L33/502 , Y02B20/181
摘要： The present invention provides a luminescent component with silicon quantum dots and its fabricating method, where the luminescent component includes a light-emitting device of high luminescent efficiency, large-area luminescence, cheap raw material and low producing cost.
摘要翻译： 本发明提供了一种具有硅量子点的发光元件及其制造方法，其中发光元件包括发光效率高，发光面积大，原料价格便宜，成本低的发光元件。
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公开(公告)号：US07485560B2
公开(公告)日：2009-02-03
申请号：US11603043
申请日：2006-11-22
申请人： Tsun-Neng Yang , Shan-Ming Lan
发明人： Tsun-Neng Yang , Shan-Ming Lan
IPC分类号： H01L21/44
摘要： An amorphous silicon (Si) film is taken to form a metal silicide of Si—Al(aluminum) under a high temperature. Al atoms is diffused into the amorphous Si film for forming the metal silicide of Si—Al as nucleus site. Then through heating and annealing, a microcrystalline or nano-crystalline silicon thin film is obtained. The whole process is only one process and is done in only one reacting chamber.
摘要翻译： 取非晶硅（Si）膜在高温下形成Si-Al（铝）的金属硅化物。 Al原子扩散到非晶Si膜中，用于形成Si-Al的金属硅化物作为核部位。 然后通过加热和退火，获得微晶或纳米晶硅薄膜。 整个过程只是一个过程，只在一个反应室中完成。
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30.发明申请Method for fabricating optical sensitive layer of solar cell having silicon quantum dots 失效制造具有硅量子点的太阳能电池的光敏层的方法公开(公告)号：US20070207563A1
公开(公告)日：2007-09-06
申请号：US11367371
申请日：2006-03-06
申请人： Ming-Chang Lin , Tsun-Neng Yang , Shan-Ming Lan , Tsong-Yang Wei , Jyh-Perng Chiu , Wei-Yang Ma
发明人： Ming-Chang Lin , Tsun-Neng Yang , Shan-Ming Lan , Tsong-Yang Wei , Jyh-Perng Chiu , Wei-Yang Ma
IPC分类号： H01L21/00
CPC分类号： H01G9/2045 , B82Y20/00 , Y02E10/542
摘要： A distribution layer of silicon quantum dots are fabricated. After the layer is exposed to sun light for a while, the layer absorbs energy and produces pairs of electron and hole. By limiting the movement of the electrons and their moving directions through the structure obtained, the efficiency of an optoelectronic conversion is enhanced.
摘要翻译： 制造硅量子点的分布层。 在层被阳光照射一段时间之后，该层吸收能量并产生电子和空穴对。 通过限制电子及其移动方向通过所获得的结构，提高了光电转换的效率。
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