摘要:
In a magneto-optical recording system for recording information with bits having upward magnetization and having downward magnetization on a recording layer of a magneto-optical recording medium, having four magnetic layers exchange-coupled with each other. A laser beam directed onto the medium is modulated to heat the magneto-optical recording medium to two values, for "High" writing and for "Low" writing. During "High" writing, the first to third layers lose magnetization because their Curie temperatures are exceeded, and the direction of the magnetization of the first layer, which is the recording layer is determined mainly by the magnetostatic coupling from the the fourth layer. During "Low" writing, the first and the third layers lose their magnetization as their Curie temperatures are exceeded, and the direction of the magnetization of the first layer is determined by the exchange coupling from the second layer, which in turn is dependent on the exchange coupling from the fourth layer.
摘要:
A flow-rate detecting device for a heat-sensitive type flow sensor having high reliability. The device includes a planar substrate having first and second through-holes formed therein in juxtaposition with each other, an insulative supporting film formed over one major surface of the substrate so as to cover the through-holes, a fluid temperature measuring resistor formed by a heat-sensitive resistor film deposited at a location of the first through-hole on the supporting film oppositely to the substrate, a heat generating resistor formed of a heat-sensitive resistance film deposited at a location of the second through-hole on the supporting film oppositely to the substrate, an insulative protection film deposited so as to cover the fluid temperature measuring resistor and the heat generating resistor, and a reinforcing film provided for the fluid temperature measuring resistor. The reinforcing film is not provided for the heat generating resistor. Flow rate or alternatively flow speed of a fluid is measured by taking advantage of phenomenon of heat transfer to the fluid from the heat generating resistor.
摘要:
A supporting film is formed over an entire front surface of a base material, a heating resistor composed of a platinum film having a predetermined pattern is formed on the supporting film, and a protecting film is formed over an entire surface of the supporting film so as to cover the heating resistor. A heating structure having a diaphragm construction is constructed by forming a cavity under a region where the heating resistor is formed by removing a portion of the base material so as to extend to the supporting film from the rear surface side of the base material. The supporting film and the protecting film are each constituted by a silicon nitride film having an index of refraction of less than 2.25.
摘要:
A dummy pattern is constituted by frame-shaped first patterns formed on a flat substrate so as to surround a resistance heater and a fluid temperature resistance thermometer, and frame-shaped second patterns formed on inner perimeter sides of the first patterns, edge portions of first and second diaphragm portions being positioned between the first patterns and the second patterns.
摘要:
A semiconductor pressure sensor comprises a silicon support substrate (1), an insulating layer (2) formed on the silicon support substrate (1), and a silicon thin plate (3) formed on the insulating layer (2). A through-hole (1a) extending in the thickness direction of the silicon support substrate (1) is formed in the silicon support substrate (1). The silicon thin plate (3) located on an extension of the through-hole (1a) functions as a diaphragm (23) that is deformed by an external pressure. The insulating layer (2) remains over the entire lower surface of the diaphragm (23). The thickness of the insulating layer (2) decreases from the peripheral portion toward the central portion of the diaphragm (23). This provides the semiconductor pressure sensor capable of reducing both the offset voltage and the variation of output voltage caused by the variation of temperature and its fabrication method.
摘要:
A semiconductor pressure sensor comprises a silicon support substrate (1), an insulating layer (2) formed on the silicon support substrate (1), and a silicon thin plate (3) formed on the insulating layer (2). A through-hole (1a) extending in the thickness direction of the silicon support substrate (1) is formed in the silicon support substrate (1). The silicon thin plate (3) located on an extension of the through-hole (1a) functions as a diaphragm (23) that is deformed by an external pressure. The insulating layer (2) remains over the entire lower surface of the diaphragm (23). The thickness of the insulating layer (2) decreases from the peripheral portion toward the central portion of the diaphragm (23). This provides the semiconductor pressure sensor capable of reducing both the offset voltage and the variation of output voltage caused by the variation of temperature and its fabrication method.
摘要:
A process for preparing a highly pure silicone ladder polymer of the general formula (1): wherein R1 and R2 represent F, H, a lower alkyl group, an alkenyl group, an aryl group, a lower fluorinated alkyl group, a fluorinated alkenyl group or a fluorinated aryl group; R3, R4, R5 and R6 each represents H, a lower alkyl group or a lower fluorinated alkyl group; and n represents an integer of 5 to 10000, which comprises: (a) a step of obtaining a prepolymer in which at least one organosilane compound is dissolved in an organic solvent and hydrolyzed with ultrapure water; (b) a step of washing the obtained prepolymer with ultrapure water; and, (c) a step of dissolving the washed prepolymer in an organic solvent and heating without a catalyst.
摘要:
A magnetoresistive sensor device including a substrate, and a sensing portion and a signal processing circuit formed above the substrate with a resin film being disposed between the sensing portion and the signal processing circuit. The sensing portion detects changes in a magnetic field induced by a moving body, is located at a position for effectively detecting changes in a magnetic field induced by the moving body, and is constituted by a magnetoresistive sensor element.
摘要:
The present invention provides a sensor element having a sensor substrate and a sensing portion supported by the sensor substrate. A resin film is provided between the sensor substrate and the sensing portion. The resin film has a high heat resistance to the temperature of the fabrication process and the use of sensor element, has excellent coverage of a three-dimensional structure, has a flat surface, applies a low stress to the sensing portion, is formed at low temperature, and prevents the sensing portion from being adversely affected in its fabrication process.
摘要:
The invention provides a sensor element having a sensor substrate and a flat sensor portion supported by the sensor substrate in which the surface of the flat sensing portion is covered with a silicone resin film. The silicone resin film is excellent in step coverage of the flat sensing portion, having low stress applied to the sensing portion, can be formed at low temperature and can prevent the sensing portion from being effected with adverse influence even in the fabrication steps.