Magneto-optical recording media and apparatus
    21.
    发明授权
    Magneto-optical recording media and apparatus 失效
    磁光记录介质和设备

    公开(公告)号:US5208797A

    公开(公告)日:1993-05-04

    申请号:US612798

    申请日:1990-11-14

    摘要: In a magneto-optical recording system for recording information with bits having upward magnetization and having downward magnetization on a recording layer of a magneto-optical recording medium, having four magnetic layers exchange-coupled with each other. A laser beam directed onto the medium is modulated to heat the magneto-optical recording medium to two values, for "High" writing and for "Low" writing. During "High" writing, the first to third layers lose magnetization because their Curie temperatures are exceeded, and the direction of the magnetization of the first layer, which is the recording layer is determined mainly by the magnetostatic coupling from the the fourth layer. During "Low" writing, the first and the third layers lose their magnetization as their Curie temperatures are exceeded, and the direction of the magnetization of the first layer is determined by the exchange coupling from the second layer, which in turn is dependent on the exchange coupling from the fourth layer.

    Flow-rate detecting device for heat-sensitive type flow sensor

    公开(公告)号:US06644113B2

    公开(公告)日:2003-11-11

    申请号:US09983081

    申请日:2001-10-23

    IPC分类号: G01F168

    CPC分类号: G01F1/6845

    摘要: A flow-rate detecting device for a heat-sensitive type flow sensor having high reliability. The device includes a planar substrate having first and second through-holes formed therein in juxtaposition with each other, an insulative supporting film formed over one major surface of the substrate so as to cover the through-holes, a fluid temperature measuring resistor formed by a heat-sensitive resistor film deposited at a location of the first through-hole on the supporting film oppositely to the substrate, a heat generating resistor formed of a heat-sensitive resistance film deposited at a location of the second through-hole on the supporting film oppositely to the substrate, an insulative protection film deposited so as to cover the fluid temperature measuring resistor and the heat generating resistor, and a reinforcing film provided for the fluid temperature measuring resistor. The reinforcing film is not provided for the heat generating resistor. Flow rate or alternatively flow speed of a fluid is measured by taking advantage of phenomenon of heat transfer to the fluid from the heat generating resistor.

    Thermal sensor
    23.
    发明授权

    公开(公告)号:US06762672B2

    公开(公告)日:2004-07-13

    申请号:US10700637

    申请日:2003-11-05

    IPC分类号: H01C304

    CPC分类号: G01K1/16

    摘要: A supporting film is formed over an entire front surface of a base material, a heating resistor composed of a platinum film having a predetermined pattern is formed on the supporting film, and a protecting film is formed over an entire surface of the supporting film so as to cover the heating resistor. A heating structure having a diaphragm construction is constructed by forming a cavity under a region where the heating resistor is formed by removing a portion of the base material so as to extend to the supporting film from the rear surface side of the base material. The supporting film and the protecting film are each constituted by a silicon nitride film having an index of refraction of less than 2.25.

    Thermosensitive flow rate detecting element and method for the manufacture thereof
    24.
    发明授权
    Thermosensitive flow rate detecting element and method for the manufacture thereof 有权
    热敏流量检测元件及其制造方法

    公开(公告)号:US06845662B2

    公开(公告)日:2005-01-25

    申请号:US10378919

    申请日:2003-03-05

    CPC分类号: G01F1/6845

    摘要: A dummy pattern is constituted by frame-shaped first patterns formed on a flat substrate so as to surround a resistance heater and a fluid temperature resistance thermometer, and frame-shaped second patterns formed on inner perimeter sides of the first patterns, edge portions of first and second diaphragm portions being positioned between the first patterns and the second patterns.

    摘要翻译: 虚设图形由形成在平坦基板上的框状的第一图案构成,以围绕电阻加热器和流体温度电阻温度计,以及形成在第一图案的内周侧上的框状的第二图案,第一图案的边缘部分 并且第二隔膜部分位于第一图案和第二图案之间。

    Semiconductor pressure sensor and its fabrication method
    25.
    发明授权
    Semiconductor pressure sensor and its fabrication method 有权
    半导体压力传感器及其制造方法

    公开(公告)号:US07786541B2

    公开(公告)日:2010-08-31

    申请号:US12067426

    申请日:2006-08-30

    IPC分类号: H01L29/84

    摘要: A semiconductor pressure sensor comprises a silicon support substrate (1), an insulating layer (2) formed on the silicon support substrate (1), and a silicon thin plate (3) formed on the insulating layer (2). A through-hole (1a) extending in the thickness direction of the silicon support substrate (1) is formed in the silicon support substrate (1). The silicon thin plate (3) located on an extension of the through-hole (1a) functions as a diaphragm (23) that is deformed by an external pressure. The insulating layer (2) remains over the entire lower surface of the diaphragm (23). The thickness of the insulating layer (2) decreases from the peripheral portion toward the central portion of the diaphragm (23). This provides the semiconductor pressure sensor capable of reducing both the offset voltage and the variation of output voltage caused by the variation of temperature and its fabrication method.

    摘要翻译: 半导体压力传感器包括硅支撑基板(1),形成在硅支撑基板(1)上的绝缘层(2)和形成在绝缘层(2)上的硅薄板(3)。 在硅支撑基板(1)上形成在硅支撑基板(1)的厚度方向上延伸的通孔(1a)。 位于通孔(1a)的延伸部上的硅薄板(3)用作通过外部压力变形的隔膜(23)。 绝缘层(2)保持在隔膜(23)的整个下表面上。 绝缘层(2)的厚度从隔膜(23)的周边部分向中心部分减小。 这提供了半导体压力传感器能够降低偏移电压和由温度变化引起的输出电压的变化及其制造方法。

    SEMICONDUCTOR PRESSURE SENSOR AND ITS FABRICATION METHOD
    26.
    发明申请
    SEMICONDUCTOR PRESSURE SENSOR AND ITS FABRICATION METHOD 有权
    半导体压力传感器及其制造方法

    公开(公告)号:US20090140355A1

    公开(公告)日:2009-06-04

    申请号:US12067426

    申请日:2006-08-30

    IPC分类号: H01L23/58 H01L21/00

    摘要: A semiconductor pressure sensor comprises a silicon support substrate (1), an insulating layer (2) formed on the silicon support substrate (1), and a silicon thin plate (3) formed on the insulating layer (2). A through-hole (1a) extending in the thickness direction of the silicon support substrate (1) is formed in the silicon support substrate (1). The silicon thin plate (3) located on an extension of the through-hole (1a) functions as a diaphragm (23) that is deformed by an external pressure. The insulating layer (2) remains over the entire lower surface of the diaphragm (23). The thickness of the insulating layer (2) decreases from the peripheral portion toward the central portion of the diaphragm (23). This provides the semiconductor pressure sensor capable of reducing both the offset voltage and the variation of output voltage caused by the variation of temperature and its fabrication method.

    摘要翻译: 半导体压力传感器包括硅支撑基板(1),形成在硅支撑基板(1)上的绝缘层(2)和形成在绝缘层(2)上的硅薄板(3)。 在硅支撑基板(1)上形成在硅支撑基板(1)的厚度方向上延伸的通孔(1a)。 位于通孔(1a)的延伸部上的硅薄板(3)用作通过外部压力变形的隔膜(23)。 绝缘层(2)保持在隔膜(23)的整个下表面上。 绝缘层(2)的厚度从隔膜(23)的周边部分向中心部分减小。 这提供了半导体压力传感器能够降低偏移电压和由温度变化引起的输出电压的变化及其制造方法。

    Process for preparing a highly pure silicone ladder polymer
    27.
    发明授权
    Process for preparing a highly pure silicone ladder polymer 有权
    制备高纯硅树脂聚合物的方法

    公开(公告)号:US06399733B1

    公开(公告)日:2002-06-04

    申请号:US09686063

    申请日:2000-10-11

    IPC分类号: C08G7706

    CPC分类号: C08G77/04 C08G77/06 C08G77/34

    摘要: A process for preparing a highly pure silicone ladder polymer of the general formula (1): wherein R1 and R2 represent F, H, a lower alkyl group, an alkenyl group, an aryl group, a lower fluorinated alkyl group, a fluorinated alkenyl group or a fluorinated aryl group; R3, R4, R5 and R6 each represents H, a lower alkyl group or a lower fluorinated alkyl group; and n represents an integer of 5 to 10000, which comprises: (a) a step of obtaining a prepolymer in which at least one organosilane compound is dissolved in an organic solvent and hydrolyzed with ultrapure water; (b) a step of washing the obtained prepolymer with ultrapure water; and, (c) a step of dissolving the washed prepolymer in an organic solvent and heating without a catalyst.

    摘要翻译: 制备通式(1)的高纯硅树脂聚合物的方法:其中R1和R2表示F,H,低级烷基,烯基,芳基,低级氟化烷基,氟化烯基 或氟化芳基; R3,R4,R5和R6各自表示H,低级烷基或低级氟化烷基; n表示5〜10000的整数,其包括:(a)获得其中至少一种有机硅烷化合物溶解在有机溶剂中并用超纯水水解的预聚物的步骤;(b) 超纯水预聚物; 和(c)将洗过的预聚物溶解在有机溶剂中并加热而不用催化剂的步骤。

    Sensor element and its manufacturing method
    29.
    发明授权
    Sensor element and its manufacturing method 有权
    传感器元件及其制造方法

    公开(公告)号:US06732583B1

    公开(公告)日:2004-05-11

    申请号:US10030426

    申请日:2002-04-01

    IPC分类号: G01F168

    摘要: The present invention provides a sensor element having a sensor substrate and a sensing portion supported by the sensor substrate. A resin film is provided between the sensor substrate and the sensing portion. The resin film has a high heat resistance to the temperature of the fabrication process and the use of sensor element, has excellent coverage of a three-dimensional structure, has a flat surface, applies a low stress to the sensing portion, is formed at low temperature, and prevents the sensing portion from being adversely affected in its fabrication process.

    摘要翻译: 本发明提供一种传感器元件,其具有传感器基板和由传感器基板支撑的感测部分。 在传感器基板和检测部之间设置有树脂膜。 该树脂膜对制造工艺的温度和传感器元件的使用具有高的耐热性,具有优异的三维结构覆盖,具有平坦的表面,对感测部分施加低应力,形成在低 温度,并且防止感测部分在其制造过程中受到不利影响。