Process fob
    22.
    发明授权

    公开(公告)号:US1343662A

    公开(公告)日:1920-06-15

    申请号:US1343662D

    IPC分类号: C01F7/58

    CPC分类号: C01F7/58

    Method for manufacturing trichlorosilane
    24.
    发明授权
    Method for manufacturing trichlorosilane 有权
    制备三氯硅烷的方法

    公开(公告)号:US08828345B2

    公开(公告)日:2014-09-09

    申请号:US13533035

    申请日:2012-06-26

    CPC分类号: C01F7/58 C01B33/1071

    摘要: This method for manufacturing trichlorosilane, includes: reacting metallurgical grade silicon with silicon tetrachloride and hydrogen so as to obtain a reaction gas; condensing the reaction gas so as to obtain a condensate; and distilling the condensate using a distillation system including a first distillation column and a secondary distillation column so as to refine trichlorosilane. While maintaining the condensate in a high temperature state so that a concentration of aluminum chloride in the condensate becomes in a range of a saturation solubility or less, the condensate flows to the first distillation column. A liquid distilled in the first distillation column is distilled by the secondary distillation column so as to refine trichlorosilane. A liquid in which aluminum chloride is concentrated is extracted from a bottom portion of the first distillation column. The extracted liquid is concentrated and dried, and then aluminum chloride is exhausted.

    摘要翻译: 该制造三氯硅烷的方法包括:使冶金级硅与四氯化硅和氢反应,得到反应气体; 冷凝反应气体以获得冷凝物; 并使用包括第一蒸馏塔和二级蒸馏塔的蒸馏系统蒸馏冷凝物,以精制三氯硅烷。 在将冷凝物保持在高温状态下,使冷凝物中的氯化铝浓度变成饱和溶解度以下的范围内,冷凝物流入第一蒸馏塔。 在第一蒸馏塔中蒸馏的液体通过二次蒸馏塔蒸馏以精制三氯硅烷。 其中氯化铝浓缩的液体从第一蒸馏塔的底部提取。 将萃取液浓缩并干燥,然后排出氯化铝。

    Production Method of an Aluminum Based Group III Nitride Single Crystal
    25.
    发明申请
    Production Method of an Aluminum Based Group III Nitride Single Crystal 有权
    铝基III族氮化物单晶的生产方法

    公开(公告)号:US20130319320A1

    公开(公告)日:2013-12-05

    申请号:US13820530

    申请日:2011-12-15

    IPC分类号: C30B25/10 C01F7/56

    摘要: A production method of aluminum based group III nitride single crystal includes a reaction step, wherein a halogenated gas and an aluminum contact at 300° C. or more to 700° C. or less, producing a mixed gas including an aluminum trihalide gas and an aluminum monohalide gas; a converting step, wherein the aluminum monohalide gas is converted to a solid by setting a temperature of the mixed gas equal to or higher than a temperature to which a solid aluminum trihalide deposit, and lower by 50° C. or more than a temperature to which halogenated gas and aluminum contact in the reaction step; a separation step, wherein the aluminum trihalide gas is removed; and a crystal growth step, wherein the aluminum trihalide gas is used for an aluminum based group III nitride single crystal raw material, keeping its temperature equal to or higher than a temperature of the converting step.

    摘要翻译: 铝基III族氮化物单晶的制造方法包括反应工序,其中在300℃以上700℃以下的卤化气体和铝接触,制造包含三卤化铝气体和 一卤化铝; 转化步骤,其中通过将混合气体的温度设定为等于或高于固体三卤化铝的温度沉积,并将其降低50℃或更高的温度,将一卤化铝转化为固体 在反应步骤中卤化气体和铝接触; 分离步骤,其中除去三卤化铝气体; 以及晶体生长步骤,其中所述三卤化铝气体用于铝基III族氮化物单晶原料,保持其温度等于或高于转化步骤的温度。