公开(公告)号：US5861063A

公开(公告)日：1999-01-19

申请号：US590471

申请日：1996-01-23

Applicant: Kentaro Shou

Inventor： Kentaro Shou

IPC: C23C16/509 ,  H01J37/32 ,  H05H1/00 ,  C23C16/00

CPC classification number: H01J37/32082 ,  C23C16/509 ,  H01J37/32532 ,  H01J2237/3328

Abstract: A second electrode 20 having a container-like configuration defines a reaction space 29. A mounting portion 12 of a first electrode 10 and a workpiece W loaded on the mounting portion 12 are surrounded by the second electrode 20. A pair of auxiliary walls 27 project upwardly from a bottom wall 21 of the second electrode 20. The mounting portion 12 for the first electrode 10 is disposed in an arrangement area A defined by the auxiliary walls 27. The mounting portion 12 projects from upper end edges of the auxiliary walls 27.

Abstract translation: 具有容器状构造的第二电极20限定反应空间29.第一电极10的安装部分12和装载在安装部分12上的工件W被第二电极20包围。一对辅助壁27突出 从第二电极20的底壁21向上。用于第一电极10的安装部分12设置在由辅助壁27限定的布置区域A中。安装部分12从辅助壁27的上端边缘突出。

公开(公告)号：US4837185A

公开(公告)日：1989-06-06

申请号：US262990

申请日：1988-10-26

Applicant: Leopoldo D. Yau ,  Galen H. Kawamoto

Inventor： Leopoldo D. Yau ,  Galen H. Kawamoto

IPC: H01L21/205 ,  C23C16/30 ,  C23C16/515 ,  H01J37/32 ,  H01L21/31 ,  H01L21/314

CPC classification number: H01J37/32082 ,  C23C16/308 ,  C23C16/515 ,  H01J37/32165 ,  H01J37/32577 ,  H01L21/3145 ,  H01J2237/3321 ,  H01J2237/3328

Abstract: A method of depositing a thin film of silicon oxynitride (Si.sub.x O.sub.y N.sub.z) onto a semiconductor substrate utilizing dual frequency plasma enhanced chemical vapor deposition (PECVD). Plasma formation is achieved by striking gases in a reaction chamber with a high voltage, low frequency radio wave, and then triggering and applying with the leading or trailing edge of the striking pulse, a second high frequency, low power radio wave. The plasma transfers energy into reactant gases forming a thin film of silicon oxynitride (Si.sub.x O.sub.y N.sub.z) onto a semiconductor substrate. The high frequency pulses provides more efficient gas ionization and less pattern, and back oxide sensitivity to film deposition rate.

Abstract translation: 使用双频等离子体增强化学气相沉积（PECVD）将氮氧化硅薄膜（SixOyNz）沉积到半导体衬底上的方法。 通过在具有高电压，低频无线电波的反应室中击打气体，然后用冲击脉冲的前沿或后沿，第二高频，低功率无线电波进行触发和施加来实现等离子体形成。 等离子体将能量转移到形成半导体衬底上的氮氧化硅薄膜（SixOyNz）的反应气体中。 高频脉冲提供更有效的气体电离和更少的图案，并且对膜沉积速率提供反向氧化物敏感性。