公开(公告)号：US11428925B2

公开(公告)日：2022-08-30

申请号：US16731249

申请日：2019-12-31

Applicant: ASML Netherlands B.V.

Inventor： Arjan Johannes Anton Beukman ,  Alessandro Polo ,  Henricus Petrus Maria Pellemans ,  Nitish Kumar

IPC: G02B26/00 ,  G03F7/20 ,  G01B11/27

Abstract: Disclosed is a metrology apparatus comprising an optical element configured to receive at or near a pupil plane of the metrology apparatus, at least first radiation comprising a first higher diffracted order and second radiation comprising a zeroth order resulting from illumination of a metrology target with radiation; and to direct said first radiation and second radiation together in a first direction. The metrology apparatus is further configured to form at least a first image of a first interference pattern, the first interference pattern resulting from interference of said first radiation and second radiation at an image plane.

公开(公告)号：US20220270848A1

公开(公告)日：2022-08-25

申请号：US17668275

申请日：2022-02-09

Applicant: ASML Netherlands B.V.

Inventor： Peter Christianus, Johannes, Maria DE LOIJER

IPC: H01J37/244 ,  H01J37/26 ,  H01J37/28

Abstract: A method of determining a distortion of a field of view of a scanning electron microscope is described. The method may include: providing a sample including substantially parallel lines extending in a first direction; performing scans across the field of view of the sample along respective scan-trajectories extending in a scan direction; the scan direction being substantially perpendicular to the first direction; detecting a response signal of the sample caused by the scanning of the sample; determining a distance between a first line segment of a line and a second line segment of the line, whereby each of the first line segment and the second line segment are crossed by scan trajectories, based on the response signal; performing the previous step for multiple locations within the field of view; and determining the distortion across the field of view, based on the determined distances at the multiple locations.

公开(公告)号：US20220269183A1

公开(公告)日：2022-08-25

申请号：US17741545

申请日：2022-05-11

Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N.V.

Inventor： Sebastian Thomas Bauerschmidt ,  Peter Maximilian Götz ,  Patrick Sebastian Uebel ,  Ronald Franciscus Herman Hugers ,  Jan Adrianus Boer ,  Edwin Johannes Cornelis Bos ,  Andreas Johannes Antonius Brouns ,  Vitaliy Prosyentsov ,  Paul William Scholtes - Van Eijk ,  Paulus Antonius Andreas Teunissen ,  Mahesh Upendra Ajgaonkar

IPC: G03F7/20 ,  G02B1/00 ,  G02B6/02 ,  G01B11/27 ,  G01J1/42 ,  G01M11/00

Abstract: A mode control system and method for controlling an output mode of a broadband radiation source including a photonic crystal fiber (PCF). The mode control system includes at least one detection unit configured to measure one or more parameters of radiation emitted from the broadband radiation source to generate measurement data, and a processing unit configured to evaluate mode purity of the radiation emitted from the broadband radiation source, from the measurement data. Based on the evaluation, the mode control system is configured to generate a control signal for optimization of one or more pump coupling conditions of the broadband radiation source. The one or more pump coupling conditions relate to the coupling of a pump laser beam with respect to a fiber core of the photonic crystal fiber.

公开(公告)号：US11422472B2

公开(公告)日：2022-08-23

申请号：US16769534

申请日：2018-12-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Paulus Jacobus Maria Van Adrichem ,  Ahmad Wasiem Ibrahim El-Said ,  Christoph Rene Konrad Cebulla Hennerkes ,  Johannes Christiaan Maria Jasper

IPC: G03F7/20

Abstract: A method involving: obtaining a process model of a patterning process that includes or accounts for an average optical aberration of optical systems of a plurality of apparatuses for use with a patterning process; and applying the process model to determine an adjustment to a parameter of the patterning process to account for the average optical aberration.

公开(公告)号：US20220260929A1

公开(公告)日：2022-08-18

申请号：US17628668

申请日：2020-07-06

Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N.V.

Inventor： Nikhil MEHTA ,  Maurits VAN DER SCHAAR ,  Markus Gerardus Martinus Maria VAN KRAAIJ ,  Hugo Augustinus Joseph CRAMER ,  Olger Victor ZWIER ,  Jeroen COTTAAR ,  Patrick WARNAAR

IPC: G03F7/20 ,  G03F1/84 ,  G01N21/956

Abstract: A patterning device for patterning product structures onto a substrate and an associated substrate patterned using such a patterning device. The patterning device includes target patterning elements for patterning at least one target from which a parameter of interest can be inferred. The patterning device includes product patterning elements for patterning the product structures. The target patterning elements and product patterning elements are configured such that the at least one target has at least one boundary which is neither parallel nor perpendicular with respect to the product structures on the substrate.

公开(公告)号：US20220252974A1

公开(公告)日：2022-08-11

申请号：US17728608

申请日：2022-04-25

Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N.V.

Inventor： David Ferdinand VLES ,  Erik Achilles ABEGG ,  Aage BENDIKSEN ,  Derk Servatius Gertruda BROUNS ,  Pradeep K. GOVIL ,  Paul JANSSEN ,  Maxim Aleksandrovich NASALEVICH ,  Arnoud Willem NOTENBOOM ,  Mária PÉTER ,  Marcus Adrianus VAN DE KERKHOF ,  Willem Joan VAN DER ZANDE ,  Pieter-Jan VAN ZWOL ,  Johannes Petrus Martinus Bernardus VERMEULEN ,  Willlem-Pieter VOORTHUIJZEN ,  James Norman WILEY

IPC: G03F1/64 ,  G03F1/22 ,  G03F7/20 ,  G03F1/62

Abstract: A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle comprising at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to breakage of remaining regions of the pellicle. At least one breakage region comprises a region of the pellicle which has a reduced thickness when compared to surrounding regions of the pellicle.

公开(公告)号：US11385551B2

公开(公告)日：2022-07-12

申请号：US16330417

申请日：2017-08-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Bert Verstraeten ,  Hugo Augustinus Joseph Cramer ,  Thomas Theeuwes

IPC: G03F7/20

Abstract: A method of evaluating a patterning process, the method including: obtaining the result of a first measurement of a first metrology target; obtaining the result of a second measurement of a second metrology target, the second metrology target having a structural difference from the first metrology target that generates a sensitivity difference and/or an offset, of a process parameter of the patterning process between the first and second metrology targets; and determining a value pertaining to the patterning process based on the results of the first and second measurements.

公开(公告)号：US11379648B2

公开(公告)日：2022-07-05

申请号：US16993685

申请日：2020-08-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Frank Gang Chen ,  Joseph Werner De Vocht ,  Yuelin Du ,  Wanyu Li ,  Yen-Wen Lu

IPC: G06F30/398 ,  G03F7/20

Abstract: A method for determining an overlapping process window (OPW) of an area of interest on a portion of a design layout for a device manufacturing process for imaging the portion onto a substrate, the method including: obtaining a plurality of features in the area of interest; obtaining a plurality of values of one or more processing parameters of the device manufacturing process; determining existence of defects, probability of the existence of defects, or both in imaging the plurality of features by the device manufacturing process under each of the plurality of values; and determining the OPW of the area of interest from the existence of defects, the probability of the existence of defects, or both.

公开(公告)号：US20220206400A1

公开(公告)日：2022-06-30

申请号：US17698100

申请日：2022-03-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Nicolaas TEN KATE ,  Joost Jeroen OTTENS ,  Bastiaan Andreas Wilhelmus Hubertus KNARREN ,  Robbert Jan VOOGD ,  Giovanni Francisco NINO ,  Marinus Jan REMIE ,  Johannes Henricus Wilhelmus JACOBS ,  Thibault Simon Mathieu LAURENT ,  Johan Gertrudis Cornelis KUNNEN

IPC: G03F7/20

Abstract: A lithographic apparatus is disclosed that includes a substrate table configured to support a substrate on a substrate supporting area and a heater and/or temperature sensor on a surface adjacent the substrate supporting area.

公开(公告)号：US11372337B2

公开(公告)日：2022-06-28

申请号：US17062251

申请日：2020-10-02

Applicant: ASML NETHERLANDS B.V.

Inventor： Jun Ye ,  Yu Cao

IPC: G03F7/20

Abstract: A model-based tuning method for tuning a first lithography system utilizing a reference lithography system, each of which has tunable parameters for controlling imaging performance. The method includes the steps of defining a test pattern and an imaging model; imaging the test pattern utilizing the reference lithography system and measuring the imaging results; imaging the test pattern utilizing the first lithography system and measuring the imaging results; calibrating the imaging model utilizing the imaging results corresponding to the reference lithography system, where the calibrated imaging model has a first set of parameter values; tuning the calibrated imaging model utilizing the imaging results corresponding to the first lithography system, where the tuned calibrated model has a second set of parameter values; and adjusting the parameters of the first lithography system based on a difference between the first set of parameter values and the second set of parameter values.