Abstract:
Impurity distributions in microelectronic structures formed from an aluminum-containing material are determined. A passivation layer, e.g., a titanium/titanium nitride layer or a borphosphosilicate glass (BPSG) layer, is formed on a substrate. A layer of the aluminum-containing material is formed on the passivation layer. The layer of the aluminum-containing material is then exposed to a phosphoric acid solution to remove aluminum from the layer of the aluminum-containing material and leave a precipitate on the passivation layer. The precipitate is then analyzed using scanning electron microscope (SEM) photomicrograms and/or Auger analysis to determine a distribution of impurities in the layer of the aluminum-containing material.
Abstract:
A semiconductor wafer anchoring device, which includes a platen having a flat upper surface adapted for mounting a semiconductor wafer thereon, an elastic O-ring located between the platen and the semiconductor wafer, and a clamp disposed to face with the O-ring, which is adapted for pressing upon the upper surface of the semiconductor wafer and for anchoring same. The clamp is a ring-type plate having an inner diameter larger than the diameter of the semiconductor wafer, and having a plurality of protrusions projecting from each quadrant of an inner circumferential surface of the ring-type plate toward the center thereof, an end of each protrusion being adapted to be positioned between a chip pattern and the edge of the semiconductor wafer.
Abstract:
An electric blanket using an AC to DC converter circuit either alone or in combination with a shield mesh that surrounds the heating wire to substantially reduce the electromagnetic field produced by the heating wire. The electric blanket has a heating element having a conductive wire and a shielding component, in which the conductive wire is placed between the shielding component to substantially encase the conductive wire. To discharge any build up of electrical charges, the shielding component is coupled to the ground. The electric blanket also has a control device for use with the alternating electrical current. The control device has a temperature control circuit that controls the current flow pursuant to the temperature setting. A converter device used in the electric blanket is electrically connected to the outputs of the control device. The converter device includes a rectifier circuit connected to the control device and has output terminals to generate rectified current from the alternating electrical current; and a filter circuit connected across the output terminals of the rectifier circuit to provide direct electrical current to the wire of the heating element. The output of the filter circuit is provided to the conductive wire to generate heat with substantially reduced electromagnetic field.
Abstract:
There are disclosed methods for the prevention of misfit dislocation in a silicon wafer and the silicon wafer structure manufactured thereby. A method according to an embodiment comprises the steps of: depositing a blanket silicon oxide or silicon nitride on silicon wafer in a chemical vapor deposition process; selectively etching the silicon oxide or silicon nitride, to form a silicon oxide or silicon nitride pattern which is of close shape; and injecting the silicon wafer with impurities at a high density with the CVD silicon oxide or silicon nitride pattern serving as a mask, so as to form an impurity-blocked region is formed under the CVD silicon oxide or silicon nitride through the action of the mask. The misfit dislocation is propagated mainly from the edge of wafer and an impurity-blocked region can prevent the propagation. The propagation energy is virtually based on the tensile stress attributable to the implantation of impurity. Formation of an impurity-blocked region in the wafer barricades the propagation of misfit dislocation because the propagation energy is not supplied in this region. Thus, the area of the silicon wafer enclosed by the impurity-blocked region has no misfit dislocation. By such conception, a silicon wafer free of misfit dislocation can be manufactured. Therefore, there are improved in electrical and mechanical properties in electrical devices, X-ray masks and micromachines as well as in surface roughness.
Abstract:
A disk centering apparatus of a compact disk drive including a metal ball having a high moment of inertia and a spring for elastically biasing the metal ball toward the turntable. The ball is disposed in the center of the pulley spindle to prevent pickup errors by reducing the vibration generated during high-speed disk rotation.
Abstract:
A washing machine having a spraying nozzle assembly which not only sprays the circulated washing liquid onto the clothing evenly, but also completely removes impurities formed between an outer tub and a spin tub is disclosed. The spraying nozzle assembly has an upper frame and a lower frame secured to the upper frame. The lower frame has a plurality of spraying nozzles at its underside. Each spraying nozzle is circumferentially spaced apart from each other. Each spraying nozzle extends toward the upper inner wall of the spin tub so that impurities such as foam formed between the spin tub and the outer tub can be completely removed without wasting any washing liquid.
Abstract:
A television signal converting system which converts a television signal having a different broadcasting method to be displayed on another type television receiver by performing a signal converting process. The system performs a scanning line conversion for an arbitrary television signal to separate at least two luminance and color difference signals having different scanning line numbers corresponding to at least two picture screen modes. The system selects the luminance and color difference signals according to the screen mode among the separated at least two luminance and chrominance signals and then samples the selected luminance and color difference signals by the scanning line number corresponding to the picture screen mode.
Abstract:
Provided is a method for chatting messages by topic based on subscription channel reference in a server. The method may include: receiving a message transmission request from a first user terminal corresponding to a first user to a second user terminal corresponding to a second user; extracting a subscription channel to be referred to by parsing the received message; reading a corresponding client handler with reference to a subscription channel stored in a subscription channel storage; and transmitting a message to the first and second user terminals through the read client handler.