UNIVERSAL DONOR-DERIVED TOLEROGENIC CELLS FOR INDUCING NON-SYNGENEIC TRANSPLANTATION TOLERANCE
    371.
    发明申请
    UNIVERSAL DONOR-DERIVED TOLEROGENIC CELLS FOR INDUCING NON-SYNGENEIC TRANSPLANTATION TOLERANCE 审中-公开
    用于诱导非同义转移耐受性的通用衍生的致癌细胞

    公开(公告)号:US20150104471A1

    公开(公告)日:2015-04-16

    申请号:US14578550

    申请日:2014-12-22

    Inventor: Yair REISNER

    Abstract: The present invention provides a method of treating a disease in a subject in need thereof via non-syngeneic graft administration without or with reduced concomitant graft rejection. The method comprises administering to the subject a therapeutically effective graft being non-syngeneic with the subject, and a dose of tolerogenic cells being non-syngeneic with both the subject and the graft for preventing or reducing graft rejection in the subject, thereby treating the disease in the subject

    Abstract translation: 本发明提供了一种在有需要的受试者中通过非同基因移植物给药治疗疾病的方法,而不伴随或伴有伴随的移植排斥反应。 该方法包括向受试者施用与受试者非同基因的治疗有效的移植物,并且一定剂量的耐受性细胞与受试者和移植物不同,用于预防或减少受试者的移植物排斥,从而治疗疾病 在主题

    COLLODIAL SEMICONDUCTING STRUCTURE
    376.
    发明申请
    COLLODIAL SEMICONDUCTING STRUCTURE 有权
    COLLEOD半导体结构

    公开(公告)号:US20140312302A1

    公开(公告)日:2014-10-23

    申请号:US14258696

    申请日:2014-04-22

    Abstract: The present invention is based on a unique design of a novel structure, which incorporates two quantum dots of a different bandgap separated by a tunneling barrier. Upconversion is expected to occur by the sequential absorption of two photons. In broad terms, the first photon excites an electron-hole pair via intraband absorption in the lower bandgap dot, leaving a confined hole and a relatively delocalized electron. The second absorbed photon can lead, either directly or indirectly, to further excitation of the hole, enabling it to then cross the barrier layer. This, in turn, is followed by radiative recombination with the delocalized electron.

    Abstract translation: 本发明基于新颖结构的独特设计,其结合了由隧道屏障分隔的不同带隙的两个量子点。 上转换预期通过顺序吸收两个光子而发生。 在广义上,第一个光子通过下带隙点中的内部吸收激发电子 - 空穴对,留下受限的孔和相对离域的电子。 第二个吸收的光子可以直接或间接导致孔的进一步激发,使其能够穿过阻挡层。 这又是随着与离域电子的辐射复合。

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