Abstract:
Disclosed herein is an array of field emission cathodes of the type, in which each element is made up of a substrate 1 (which serves as a first electrode 1), an insulating layer 2 in which is formed a cavity 6, a cathode 9 formed in the cavity 6 and on the first electrode 1, and a second electrode 3 formed on the insulating layer 2, and the second electrode is coated with a protective metal layer having good conductivity and corrosion resistance. The record electrode (the gate electrode) protected from oxidation permits stable electron emission. Also disclosed herein is an array of field emission cathodes in which each element is made up of a first electrode 11 to apply voltage to a plurality of cathodes 9, a resistance layer 12, an insulating layer 2, and a second electrode 3 which are formed on top of the other, a cavity 6 formed in the second electrode 3 and insulating layer 2, and a cathode 9 formed in the cavity 6 and on the resistance layer 12, with the first electrode 11 having a void under the cathode 9. This structure prevents short circuits between the cathode and the gate electrode, which contributes to high yields and long life.
Abstract:
The disclosed flat panel field emitter display (FPFED) comprises a first impedance that carries all of the current to all of the micropoint emitters of one or more (preferably one, typically fewer than about five, always fewer than all the pixels of a given row or column of the display) pixels. Provision of the first impedance can provide self-compensation to the involved pixel, making it possible to substantially reduce the required number of micropoint emitters/pixel and color. This in turn can lead to increased speed of the display, and/or to lower power consumption. The first impedance advantageously is a capacitor rather than a resistor, and embodiments that comprise a capacitive first impedance are disclosed. Other advantageous optional features are also disclosed. These include provision of gate impedances, of photoconductive elements, of an auxiliary gate electrode, or of gettering means.
Abstract:
A field emission device and method for manufacturing which comprises using a diffusion mask to preserve an area of a silicon substrate for use as a cathode while all around the cathode the substrate is being diffused with oxygen to form an insulating layer. And further comprising depositing a molybdenum gate electrode layer on the insulating layer and etching the molybdenum gate electrode layer such that the diffusion mask falls off and the insulating layer is dissolved around the cathode through the hole formed in the gate electrode layer by the diffusion mask being removed. The gate electrode openings are therefore automatically and independently self-aligned with their respective cathodes.
Abstract:
Electron source with micropoint emissive cathodes and display means by cathodoluminescence excited by field emission and using said source. Each cathode (5) comprises an electrically conductive layer (22) and micropoints (12) and, according to the invention, a continuous resistive layer (24) is provided between the conductive layer and the micropoints. The display means comprises a cathodoluminescent anode (16) facing the source.
Abstract:
A device is disclosed which produces high current, low noise, low lateral energy, stochastic electron emission from a multiplicity of insulative particles subjected to a field. The insulative particles are in and of a surface thickness comprised of a random mixture of insulative and conductive particles in ohmic contact. Emission is achieved at applied potentials of about 5 volts which produce a field sufficient to emit electron currents of nanoamperes to milliamperes. Single devices or arrays of devices may be batch fabricated. Each device has an imtegral, implicity self-aligned electron optic system comprising means for modulating, focusing and deflecting the formed current beam, and means shielding the device from ambient magnetic fields.