公开(公告)号：US07763919B2

公开(公告)日：2010-07-27

申请号：US11612647

申请日：2006-12-19

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L31/062 ,  H01L31/113

CPC classification number: H01L27/14603 ,  H01L27/1463

Abstract: A CMOS image sensor capable of improving characteristics of the image sensor by preventing damage to a photodiode region and a method for manufacturing the same are provided. The CMOS image sensor includes: a semiconductor substrate on which a device isolation region and an active region are defined; a photodiode region formed at the active region; a conductive plug formed on the photodiode region for connecting the photodiode region to a metal wiring; and a transistor formed enclosing the conductive plug.

Abstract translation: 提供了能够通过防止光电二极管区域的损坏来提高图像传感器的特性的CMOS图像传感器及其制造方法。 CMOS图像传感器包括：半导体衬底，其上限定了器件隔离区域和有源区域; 形成在有源区的光电二极管区; 形成在所述光电二极管区域上用于将所述光电二极管区域连接到金属布线的导电插塞; 以及形成围绕导电插塞的晶体管。

公开(公告)号：US20100026869A1

公开(公告)日：2010-02-04

申请号：US12508152

申请日：2009-07-23

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L31/18 ,  H04N5/335

CPC classification number: H01L27/14636 ,  H01L27/1462 ,  H01L27/14692

Abstract: An image sensor and a method for manufacturing the same are provided. The image sensor comprises a readout circuitry, an interlayer dielectric, an interconnection, and a CuInGaSe2 (CIGS) image sensing device. The readout circuitry is disposed on a first substrate. The interlayer dielectric is disposed over the first substrate. The interconnection is in the interlayer dielectric and electrically connected to the readout circuitry. The CIGS image sensing device is disposed over the interconnection and electrically connected to the readout circuitry through the interconnection.

Abstract translation: 提供了图像传感器及其制造方法。 图像传感器包括读出电路，层间电介质，互连和CuInGaSe2（CIGS）图像感测装置。 读出电路设置在第一基板上。 层间电介质设置在第一衬底上。 互连在层间电介质中并电连接到读出电路。 CIGS图像感测装置设置在互连上并通过互连电连接到读出电路。

公开(公告)号：US20100025687A1

公开(公告)日：2010-02-04

申请号：US12511336

申请日：2009-07-29

Applicant: CHANG HUN HAN

Inventor： CHANG HUN HAN

IPC: H01L31/0376 ,  H01L21/30

CPC classification number: H01L27/14632 ,  H01L27/14687 ,  H01L27/14692 ,  H01L27/14698

Abstract: An image sensor and a method for manufacturing the same are provided. The image sensor comprises a readout circuitry, a first interlayer dielectric with an interconnection therein, a second interlayer dielectric, an image sensing device, and a contact plug. The readout circuitry is formed in a first substrate. The first interlayer dielectric is formed over the first substrate. The interconnection is electrically connected to the readout circuitry. The second interlayer dielectric is formed over the first interlayer dielectric. The image sensing device comprises a first laser annealed trench and is disposed over the second interlayer dielectric. The contact plug penetrates the first laser annealed trench and the second interlayer dielectric and electrically connects the image sensing device and the interconnection.

Abstract translation: 提供了图像传感器及其制造方法。 图像传感器包括读出电路，其中具有互连的第一层间电介质，第二层间电介质，图像感测装置和接触插塞。 读出电路形成在第一衬底中。 在第一衬底上形成第一层间电介质。 互连电连接到读出电路。 在第一层间电介质上形成第二层间电介质。 图像感测装置包括第一激光退火沟槽并设置在第二层间电介质上。 接触插塞穿透第一激光退火沟槽和第二层间电介质并电连接图像感测装置和互连。

公开(公告)号：US20090246613A1

公开(公告)日：2009-10-01

申请号：US12158936

申请日：2008-03-06

Applicant: Jong-Hyeok Park ,  Sang-Young Lee ,  Jang-Hyuk Hong ,  Moon-Ja Nam ,  Jung-A Yoo ,  Sang-Seop Kim ,  Chang-Hun Han

Inventor： Jong-Hyeok Park ,  Sang-Young Lee ,  Jang-Hyuk Hong ,  Moon-Ja Nam ,  Jung-A Yoo ,  Sang-Seop Kim ,  Chang-Hun Han

IPC: H01M2/16

CPC classification number: H01M2/166 ,  H01M2/16 ,  H01M2/1686 ,  H01M10/052

Abstract: An organic/inorganic composite separator includes a porous substrate having a plurality of pores; and a porous coating layer formed on at least one surface of the porous substrate with a plurality of inorganic particles and a binder polymer. The binder polymer is a copolymer including: (a) a first monomer unit having a contact angle to a water drop in the range from 0° to 49°; and (b) a second monomer unit having a contact angle to a water drop in the range from 50° to 130°. This organic/inorganic composite separator has excellent thermal stability, so it may restrain an electric short circuit between a cathode and an anode. In addition, the separator may prevent inorganic particles in the porous coating layer from being extracted during an assembling process of an electrochemical device, thereby improving stability of an electrochemical device.

Abstract translation: 有机/无机复合隔膜包括具有多个孔的多孔基材; 以及在多孔基材的至少一个表面上形成有多个无机颗粒和粘合剂聚合物的多孔涂层。 粘合剂聚合物是共聚物，其包含：（a）与0〜49°的水滴接触角的第一单体单元; 和（b）第二单体单元，其具有与水滴在50°至130°范围内的接触角。 该有机/无机复合隔膜具有优异的热稳定性，因此可以抑制阴极与阳极之间的电短路。 此外，隔膜可以防止多孔涂层中的无机颗粒在电化学装置的组装过程中被提取，从而提高电化学装置的稳定性。

公开(公告)号：US20090205175A1

公开(公告)日：2009-08-20

申请号：US12305140

申请日：2008-03-27

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: A43C11/24

CPC classification number: A43C1/00 ,  A43B3/0078 ,  A43B23/24 ,  A43C11/22 ,  A43C11/24 ,  Y10T24/3703

Abstract: The present invention relates to a shoelace accessory provided to a shoelace to create an aesthetic appearance on the midfoot portion of a shoe while preventing the shoelace from being loosened, by preventing respective ornamental elements, threaded on the shoelace, from being moved or deformed. The shoelace is inserted through pairs of eyelets of an eyestay provided to the midfoot portion of a shoe so that the shoelace can be tightened and loosened to allow the shoe to be secured around a wearer's foot in conformity with a size of the foot, ornamental elements are threaded on the shoelace such that they are respectively placed between the respective pairs of eyelets and are positioned side by side in a rearward direction so as to independently or cooperatively provide an aesthetic appearance, and stoppers are integrally formed on surfaces of the ornamental elements.

Abstract translation: 本发明涉及一种鞋带配件，其提供给鞋带，以通过防止穿着鞋带上的相应装饰元件的移动或变形来防止鞋带松动，从而在鞋的中脚部分产生美学外观。 鞋带通过设置在鞋的中脚部分的目镜的孔眼插入，使得鞋带可以被紧固和松开，以使鞋根据脚的大小固定在穿着者的脚上，装饰元件 穿在鞋带上，使得它们分别放置在各对孔眼之间并且沿向后的方向并排定位，以便独立地或协同地提供美观的外观，并且止挡件一体地形成在装饰元件的表面上。

公开(公告)号：US20090146205A1

公开(公告)日：2009-06-11

申请号：US12368265

申请日：2009-02-09

Applicant: Chang Hun HAN

Inventor： Chang Hun HAN

IPC: H01L29/788

CPC classification number: H01L29/42324 ,  H01L29/40114

Abstract: Disclosed is a floating gate of a flash memory device, wherein a tunneling oxide layer is formed on a semiconductor substrate, and a floating gate is formed in the shape of a lens having a convex top surface.

Abstract translation: 公开了一种闪存器件的浮动栅极，其中在半导体衬底上形成隧道氧化物层，并且浮栅形成为具有凸顶表面的透镜的形状。

公开(公告)号：US07544530B2

公开(公告)日：2009-06-09

申请号：US11486456

申请日：2006-07-13

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L21/20

CPC classification number: H01L27/14683 ,  H01L27/14603

Abstract: Disclosed are a CMOS image sensor and a manufacturing method thereof. The method includes the steps of: forming an isolation layer on a semiconductor substrate, defining an active region that includes a photo diode region and a transistor region; forming a gate in the transistor region, the gate including a gate electrode and a gate insulating layer; forming a first low-concentration diffusion region in the photo diode region; forming a second low-concentration diffusion region in the transistor region; forming a buffer layer over the substrate, the buffer layer covering the photo diode region; forming first and second insulating layers over the entire surface of the substrate, the first and second insulating layer having a different etching selectivity from each other; forming an insulating sidewall on sides of the gate electrode by selective removal of the second insulating layer; removing the first insulating layer from the transistor region; forming a high-concentration diffusion region in the exposed transistor region, partially overlapping the second low-concentration diffusion region; and forming a metal silicide layer on the high-concentration diffusion region.

Abstract translation: 公开了CMOS图像传感器及其制造方法。 该方法包括以下步骤：在半导体衬底上形成隔离层，限定包括光电二极管区域和晶体管区域的有源区域; 在所述晶体管区域中形成栅极，所述栅极包括栅极电极和栅极绝缘层; 在所述光电二极管区域中形成第一低浓度扩散区域; 在所述晶体管区域中形成第二低浓度扩散区域; 在所述衬底上形成缓冲层，所述缓冲层覆盖所述光电二极管区域; 在衬底的整个表面上形成第一和第二绝缘层，第一和第二绝缘层彼此具有不同的蚀刻选择性; 通过选择性地去除所述第二绝缘层在所述栅电极的侧面上形成绝缘侧壁; 从晶体管区域去除第一绝缘层; 在所述暴露的晶体管区域中形成高浓度扩散区域，部分地与所述第二低浓度扩散区域重叠; 在高浓度扩散区上形成金属硅化物层。

公开(公告)号：US20080203451A1

公开(公告)日：2008-08-28

申请号：US12007900

申请日：2008-01-16

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L27/146

CPC classification number: H01L27/14609 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14687

Abstract: A CMOS image sensor and a method for fabricating the same are provided, in which an N type region of a photodiode is prevented from adjoining a device isolation film and a dark current is reduced. The CMOS image sensor includes an interlayer dielectric film formed between a gate poly and a power line, a contact formed in the interlayer dielectric film, and an epitaxial layer connected with the contact and formed only in a blue photodiode region.

Abstract translation: 提供一种CMOS图像传感器及其制造方法，其中防止了光电二极管的N型区域与器件隔离膜相邻并且暗电流减小。 CMOS图像传感器包括形成在栅极聚合物和电源线之间的层间电介质膜，形成在层间电介质膜中的接触体和与接触连接并仅形成在蓝色光电二极管区域中的外延层。

公开(公告)号：US07405097B2

公开(公告)日：2008-07-29

申请号：US11319586

申请日：2005-12-29

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L21/00

CPC classification number: H01L27/14689 ,  H01L27/14643

Abstract: A CMOS image sensor and a method for manufacturing the same are disclosed, in which a blue photodiode is imparted with a greater thickness to improve sensitivity of blue light. The blue photodiode of a CMOS image sensor includes a first lightly doped P-type epitaxial layer formed on a heavily doped P-type semiconductor substrate; a gate electrode of a transfer transistor formed on the first epitaxial layer; a first N-type blue photodiode region formed on the first epitaxial layer; and a second N-type blue photodiode region formed on the first epitaxial layer corresponding to the first blue photodiode region.

Abstract translation: 公开了一种CMOS图像传感器及其制造方法，其中蓝色光电二极管被赋予更大的厚度以提高蓝光的灵敏度。 CMOS图像传感器的蓝色光电二极管包括形成在重掺杂P型半导体衬底上的第一轻掺杂P型外延层; 形成在所述第一外延层上的转移晶体管的栅电极; 形成在第一外延层上的第一N型蓝色光电二极管区域; 以及形成在对应于第一蓝色光电二极管区域的第一外延层上的第二N型蓝色光电二极管区域。

公开(公告)号：US20080157246A1

公开(公告)日：2008-07-03

申请号：US12001638

申请日：2007-12-11

Applicant: Chang Hun Han ,  Joon Hwang

Inventor： Chang Hun Han ,  Joon Hwang

IPC: H01L31/0232 ,  H01L31/18

CPC classification number: H01L27/14621 ,  H01L27/14627 ,  H01L27/14685

Abstract: An image sensor may include a color filter layer on a semiconductor substrate; and a microlens on the color filter layer and including a non-photosensitive insulating layer.

Abstract translation: 图像传感器可以包括半导体衬底上的滤色器层; 以及滤色器层上的微透镜，并且包括非感光绝缘层。