公开(公告)号：US08034677B2

公开(公告)日：2011-10-11

申请号：US12712594

申请日：2010-02-25

申请人： Chia-Pin Lin ,  Wen-Sheh Huang ,  Tian-Choy Gan ,  Chia-Lung Hung ,  Hsien-Chin Lin ,  Shyue-Shyh Lin

发明人： Chia-Pin Lin ,  Wen-Sheh Huang ,  Tian-Choy Gan ,  Chia-Lung Hung ,  Hsien-Chin Lin ,  Shyue-Shyh Lin

IPC分类号： H01L21/336

CPC分类号： H01L29/66795 ,  H01L29/66803

摘要： Provided is a high-k metal gate structure formed over a semiconductor fin. A nitride layer is formed over the gate structure and the semiconductor fin, using two separate deposition operations, the first forming a very thin nitride film. Implantation operations such as an LDD or a PKT implant, are carried out in between the two nitride film deposition operations. The first nitride film may be SiN, or SiCNx and the second nitride film is SiCNx with a low wet etch rate in H3PO4 and dilute HF acid. The nitride films may be combined to form low wet etch rate spacers enabling further processing operations to be carried out without damaging underlying structures and without requiring the formation of further dummy spacers. Further processing operations include epitaxial silicon/SiGe processing sequences and source/drain implanting operations carried out with the low etch rate spacers intact.

摘要翻译： 提供了形成在半导体鳍上的高k金属栅极结构。 在栅极结构和半导体鳍片上形成氮化物层，使用两个单独的沉积操作，首先形成非常薄的氮化物膜。 在两个氮化物膜沉积操作之间进行诸如LDD或PKT注入的植入操作。 第一氮化物膜可以是SiN或SiCNx，并且第二氮化物膜是在H3PO4中的低湿蚀刻速率的SiCNx和稀释的HF酸。 可以将氮化物膜组合以形成低湿蚀刻速率间隔物，使得能够进行进一步的处理操作而不损坏下面的结构，而不需要形成另外的虚设间隔物。 进一步的处理操作包括外延硅/ SiGe处理序列和用低蚀刻速率间隔物完整地进行的源极/漏极注入操作。

公开(公告)号：US20110207279A1

公开(公告)日：2011-08-25

申请号：US12712594

申请日：2010-02-25

申请人： Chia-Pin LIN ,  Wen-Sheh HUANG ,  Tian-Choy GAN ,  Chia-Lung HUNG ,  Hsien-Chin LIN ,  Shyue-Shyh LIN

发明人： Chia-Pin LIN ,  Wen-Sheh HUANG ,  Tian-Choy GAN ,  Chia-Lung HUNG ,  Hsien-Chin LIN ,  Shyue-Shyh LIN

IPC分类号： H01L21/336

CPC分类号： H01L29/66795 ,  H01L29/66803

摘要： Provided is a high-k metal gate structure formed over a semiconductor fin. A nitride layer is formed over the gate structure and the semiconductor fin, using two separate deposition operations, the first forming a very thin nitride film. Implantation operations such as an LDD or a PKT implant, are carried out in between the two nitride film deposition operations. The first nitride film may be SiNx or SiCNx and the second nitride film is SiCNx with a low wet etch rate in H3PO4 and dilute HF acid. The nitride films may be combined to form low wet etch rate spacers enabling further processing operations to be carried out without damaging underlying structures and without requiring the formation of further dummy spacers. Further processing operations include epitaxial silicon/SiGe processing sequences and source/drain implanting operations carried out with the low etch rate spacers intact.

摘要翻译： 提供了形成在半导体鳍上的高k金属栅极结构。 在栅极结构和半导体鳍片上形成氮化物层，使用两个单独的沉积操作，首先形成非常薄的氮化物膜。 在两个氮化物膜沉积操作之间进行诸如LDD或PKT注入的植入操作。 第一氮化物膜可以是SiNx或SiCNx，并且第二氮化物膜是SiCNx，在H 3 PO 4中具有低湿蚀刻速率和稀释的HF酸。 可以将氮化物膜组合以形成低湿蚀刻速率间隔物，使得能够进行进一步的处理操作而不损坏下面的结构，而不需要形成另外的虚设间隔物。 进一步的处理操作包括外延硅/ SiGe处理序列和用低蚀刻速率间隔物完整地进行的源极/漏极注入操作。

公开(公告)号：US20100329468A1

公开(公告)日：2010-12-30

申请号：US12618074

申请日：2009-11-13

申请人： CHIA-PIN LIN

发明人： CHIA-PIN LIN

IPC分类号： H03G11/00

CPC分类号： G11B20/10527 ,  G11B27/36 ,  H01L27/0248

摘要： A portable electronic device includes an audio file playing unit and a surge protector device connected to the audio file playing unit. The surge protector device includes a protector module connected to an audio file playing unit and a processor module connected to the protector module and the audio file playing unit. The processor module detects electric surges in the audio file playing unit and controls the protector module to filter the detected electric surges when the audio file playing unit plays audio files.

摘要翻译： 便携式电子设备包括音频文件播放单元和连接到音频文件播放单元的浪涌保护器设备。 浪涌保护器装置包括连接到音频文件播放单元的保护器模块和连接到保护器模块和音频文件播放单元的处理器模块。 处理器模块检测音频文件播放单元中的电涌，并且当音频文件播放单元播放音频文件时，控制保护模块过滤检测到的电涌。

公开(公告)号：US06739930B2

公开(公告)日：2004-05-25

申请号：US09925356

申请日：2001-08-09

申请人： Huang-Chung Cheng ,  Fu-Gom Tarntair ,  Chia-Pin Lin

发明人： Huang-Chung Cheng ,  Fu-Gom Tarntair ,  Chia-Pin Lin

IPC分类号： H01J900

CPC分类号： H01J9/025

摘要： A process of forming a field emission electrode for manufacturing a field emission array is provided. The process includes steps of (a) providing a substrate having a metal layer thereon, (b) forming a plurality of mask units on the metal layer and partially removing the metal layer uncovered by the mask units, (c) oxidizing a surface of the remained metal layer by an anodic oxidization method for forming a metal oxide layer thereon such that an upper portion of the unoxidized remained metal layer is in the shape of plural conoids, and (d) removing the remained mask units and the metal oxide layer. Alternatively, the process includes steps of (a) providing a substrate having a first metal layer thereon, (b) forming a plurality of mask units on the first metal layer and partially removing the first metal layer uncovered by the mask units, (c) oxidizing a surface of the remained first metal layer by an anodic oxidization method for forming a metal oxide layer thereon such that an upper portion of the unoxidized remained first metal layer is in the shape of plural cylinders, (d) forming a second metal layer on the metal oxide layer, and (e) removing the remained mask units.

摘要翻译： 提供了一种形成用于制造场致发射阵列的场致发射电极的工艺。 该方法包括以下步骤：（a）提供其上具有金属层的基底，（b）在金属层上形成多个掩模单元，并部分去除未被掩模单元覆盖的金属层，（c） 通过用于在其上形成金属氧化物层的阳极氧化方法保留金属层，使得未氧化的残留金属层的上部为多个扁桃状，（d）除去残留的掩模单元和金属氧化物层。 或者，该方法包括以下步骤：（a）提供其上具有第一金属层的基底，（b）在第一金属层上形成多个掩模单元，并部分去除未被掩模单元覆盖的第一金属层，（c） 通过用于在其上形成金属氧化物层的阳极氧化方法氧化残留的第一金属层的表面，使得未氧化的残留的第一金属层的上部为多个圆柱体，（d）在第二金属层上形成第二金属层 金属氧化物层，和（e）去除残留的掩模单元。