Digital dynamic trace adjustment pulse width modulate controller
    31.
    发明授权
    Digital dynamic trace adjustment pulse width modulate controller 失效
    数字动态跟踪调节脉宽调制控制器

    公开(公告)号:US06812681B1

    公开(公告)日:2004-11-02

    申请号:US10417539

    申请日:2003-04-16

    CPC classification number: H02M3/157

    Abstract: A digital dynamic trace adjustment pulse width modulate controller uses a core processing unit to receive a phase signal and outputs a pulse width modulate signal. It is observed that when the output voltage is rising or dropping then changing the pulse width modulate signal of the output end, the duty rate of the phase signal will be maintained at fifty percent degree.

    Abstract translation: 数字动态跟踪调节脉宽调制控制器使用核心处理单元接收相位信号并输出​​脉宽调制信号。 观察到,当输出电压上升或下降时,改变输出端的脉宽调制信号,相位信号的占空比将保持在百分之五十。

    Bidirectional MEMS scanning mirror with tunable natural frequency
    32.
    发明授权
    Bidirectional MEMS scanning mirror with tunable natural frequency 有权
    具有可调自然频率的双向MEMS扫描镜

    公开(公告)号:US06769616B2

    公开(公告)日:2004-08-03

    申请号:US10302387

    申请日:2002-11-22

    Abstract: In one embodiment of the invention, a MEMS structure includes a first electrode, a second electrode, and a mobile element. The first electrode is coupled to a first voltage source. The second electrode is coupled to a second voltage source. The mobile element includes a third electrode coupled to a third voltage source. A steady voltage difference between the first electrode and the third electrode is used to tune the natural frequency of the structure to a scanning frequency of an application. An oscillating voltage difference between the second electrode and the third electrode at the scanning frequency of the application is used to oscillate the mobile element. In one embodiment, the mobile unit is a mirror.

    Abstract translation: 在本发明的一个实施例中,MEMS结构包括第一电极,第二电极和移动元件。 第一电极耦合到第一电压源。 第二电极耦合到第二电压源。 移动元件包括耦合到第三电压源的第三电极。 使用第一电极和第三电极之间的稳定的电压差来将结构的固有频率调谐到应用的扫描频率。 使用在应用的扫描频率下的第二电极和第三电极之间的振荡电压差来振荡移动元件。 在一个实施例中,移动单元是镜子。

    Post-etch treatment of plasma-etched feature surfaces to prevent
corrosion
    33.
    发明授权
    Post-etch treatment of plasma-etched feature surfaces to prevent corrosion 失效
    蚀刻后处理等离子蚀刻特征表面以防止腐蚀

    公开(公告)号:US6153530A

    公开(公告)日:2000-11-28

    申请号:US270286

    申请日:1999-03-16

    CPC classification number: H01L21/02071

    Abstract: Disclosed herein is a post-etch treatment for plasma etched metal-comprising features in semiconductor devices. The post-etch treatment significantly reduces or eliminates surface corrosion of the etched metal-comprising feature. It is particularly important to prevent the formation of moisture on the surface of the feature surface prior to an affirmative treatment to remove corrosion-causing contaminants from the feature surface. Avoidance of moisture formation is assisted by use of a high vacuum; use of an inert, moisture-free purge gas; and by maintaining the substrate at a sufficiently high temperature to volatilize moisture. The affirmative post-etch treatment utilizes a plasma to expose the etched metal-comprising feature to sufficient hydrogen which is in a kinetic state permitting reaction with residual halogen-comprising residues on the etched surface, while maintaining the etched feature surface at a temperature which supports volatilization of the byproducts of a reaction between the active hydrogen species and the halogen-comprising residues. For an etched copper surface, if moisture forms on the etched surface prior to an affirmative treatment to remove corrosion-causing contaminants, it is very important to avoid contact of the etched surface with pollutants which are capable of forming copper carbonates and/or copper sulfates.

    Abstract translation: 本文公开了用于半导体器件中等离子体蚀刻金属的特征的后蚀刻处理。 蚀刻后处理显着地减少或消除了蚀刻的金属包含特征的表面腐蚀。 特别重要的是在肯定处理之前防止在特征表面的表面上形成湿气以从特征表面除去腐蚀性污染物。 通过使用高真空来辅助避免水分形成; 使用惰性,无湿气的吹扫气体; 并且通过将基底保持在足够高的温度以使水分挥发。 肯定的后蚀刻处理利用等离子体将含蚀刻金属的特征暴露于足够的氢气,该氢气处于动态状态,允许与蚀刻表面上的残留的含卤素残留物反应,同时将蚀刻的特征表面保持在支持 活性氢物质与含卤素残基之间的反应的副产物挥发。 对于蚀刻的铜表面,如果在进行肯定处理以除去腐蚀性污染物之前在蚀刻表面上形成水分,则避免蚀刻表面与能够形成碳酸铜和/或硫酸铜的污染物接触是非常重要的 。

    Auxiliary drawer structure on top surface on a desk
    34.
    发明授权
    Auxiliary drawer structure on top surface on a desk 失效
    辅助抽屉结构在桌面上

    公开(公告)号:US4700993A

    公开(公告)日:1987-10-20

    申请号:US13062

    申请日:1987-02-10

    Applicant: Chung Fu-Long

    Inventor: Chung Fu-Long

    CPC classification number: A47B17/04 A47B51/00 A47B2220/0013

    Abstract: An auxiliary drawer structure on top surface of a desk, it relates to the effective utilization of spaces for a desk, in particular, those spaces which are below the top face and by the rear side of a desk. Of which, the desk surface at the location said above is furnished with comparatively larger rectangular openings for receiving the longitudinally inserted box-shaped drawer, and the top surfaces of each lid on each of this box-shaped drawers are aligned flatly and evenly with the desk face after drawers are pressed into the rectangular openings. An extension/compression spring is furnished on bottom side of each drawer to serve self-rising purpose of each drawer, also guiding blocks and guided-swinging and positioning devices are furnished to both left and right-side respectively of each drawer for locking up when the drawer is risen up to a certain position or pressed down to its hide out position. These rising-up and hiding-out functions are repetitive when the drawer is pressed downwardly once after another.

    Abstract translation: 在桌子的顶面上的辅助抽屉结构涉及到有效利用书桌的空间,特别是在桌子的顶面和桌子后方的空间。 其中,上述位置处的桌面配置有相对较大的矩形开口,用于容纳纵向插入的盒形抽屉,并且每个该盒形抽屉上的每个盖的顶表面平齐均匀地对准 抽屉后的桌面被压入矩形开口。 在每个抽屉的底侧设有延伸/压缩弹簧,用于每个抽屉的自升式目的,还分别在每个抽屉的左右两侧分别设置导向块和导向摆动和定位装置,用于锁定 抽屉上升到一定位置或按压到其隐藏位置。 这些上升和隐藏功能是重复的,当抽屉被按下一次又一次。

    Structure and Method of Audio Amplifier with Power Feedback

    公开(公告)号:US20210143777A1

    公开(公告)日:2021-05-13

    申请号:US16676518

    申请日:2019-11-07

    Applicant: Chung-Fu Chou

    Inventor: Chung-Fu Chou

    Abstract: The present invention generally relates to a structure and method of audio amplifier with power feedback, including a power amplifying unit, a loud-speaker, a current sensing unit, a voltage sensing unit and a multiplying unit, the power amplifying unit includes an input side and an output side, the input side inputs an audio voltage signal; and the loud-speaker is electrically connected to an output side of the power amplifying unit; the current sensing unit is electrically connected to the output side of the power amplifying unit and senses the output current of the power amplifying unit and then converted into a current control voltage signal; the voltage sensing unit is electrically connected to the output side of the power amplifying unit, and senses the output voltage of the power amplifying unit to form an output sensing voltage signal; the multiplying unit obtains the voltage of the current control voltage multiplied by the output sensing voltage, and the output side of the multiplying unit is electrically connected to the input side of the power amplifying unit to form a closed loop power feedback structure, accordingly improving the output quality of the amplifier and loud-speaker.

    Battery Charge/Discharge Management Method And System

    公开(公告)号:US20210013729A1

    公开(公告)日:2021-01-14

    申请号:US16505828

    申请日:2019-07-09

    Applicant: Chung-Fu Chou

    Inventor: Chung-Fu Chou

    Abstract: The present invention relates generally to a battery charge/discharge management method and system. A lithium battery core and a DC/DC converter are embedded in the battery to generate input or output I/O voltage and current. When the lithium battery core is in the working voltage range, the battery charge/discharge management method comprises the following modes: a1. the overvoltage protection mode is adopted when the charging operation is higher than the preset high charging voltage, the I/O voltage cannot be fed in the battery; a2. it is charging mode when the charging operation voltage is lower than the preset high charging voltage and higher than the minimum rechargeable voltage, the I/O voltage can charge the lithium battery core in the battery; a3. it is protection mode when the I/O voltage is lower than the minimum rechargeable voltage and higher than the maximum dischargeable voltage, no charging/discharging operation; a4. the battery can discharge when the I/O voltage is lower than the maximum dischargeable voltage and higher than the minimum dischargeable voltage, the I/O voltage comprises the output internal reference voltage of DC/DC converter and the electric quantity indication voltage of product scaled down according to the actual voltage of lithium battery core, and the I/O voltage corresponds to dynamic load line characteristic; a5. the I/O voltage load line offset is enlarged when the actual voltage of lithium battery core is lower than the preset low battery voltage; a6. it is negative voltage protection mode when the I/O voltage is lower than 0V, the battery does not perform charging/discharging operation, and I/O terminal to ground short circuit provides a negative current loop; the present invention can provide better electric quantity management and measurement.

    EXERCISE MACHINE HAVING CHANGEABLE DAMPING MECHANISM

    公开(公告)号:US20170274237A1

    公开(公告)日:2017-09-28

    申请号:US15460332

    申请日:2017-03-16

    Applicant: Chung-Fu Chang

    Inventor: Chung-Fu Chang

    Abstract: An exercise machine having a changeable damping mechanism is provided. A first transmission rope on a first shifting wheel of a first rotating shaft drives a damping device of a damping shaft to generate a relative damping action for training the leg muscular endurance of the user. Through a first changeable damping mechanism, the first transmission rope, which having stretch elasticity on the first shifting wheel is controlled to adjust the rotational speed according to the gear ratio, which may be in cooperation with a second transmission rope, which having stretch elasticity on a second shifting wheel through a second changeable damping mechanism, and is in cooperation with the damping action of a magnetic control wheel or a blower fan of the damping device to extend the range of damping control for different users to train muscular endurance.

    Two-dimensional electrostatic scanner with distributed springs
    38.
    发明授权
    Two-dimensional electrostatic scanner with distributed springs 有权
    具有分布弹簧的二维静电扫描仪

    公开(公告)号:US09201239B1

    公开(公告)日:2015-12-01

    申请号:US14201668

    申请日:2014-03-07

    Applicant: Yee-Chung Fu

    Inventor: Yee-Chung Fu

    CPC classification number: G02B26/101 G02B26/0841

    Abstract: A two-dimensional electrostatic scanner with distributed springs is disclosed. The two-dimensional electrostatic scanner comprises a frame, a mirror, one or more first-directional comb drives, two or more second-directional comb drives, four or more first-directional springs, and two or more second-directional springs. The four or more first-directional springs may connect to different electrical voltage source or electrical ground.

    Abstract translation: 公开了一种具有分布弹簧的二维静电扫描仪。 二维静电扫描器包括框架,反射镜,一个或多个第一方向梳状驱动器,两个或更多个第二方向梳状驱动器,四个或更多个第一方向弹簧和两个或更多个第二方向弹簧。 四个或更多个第一方向弹簧可以连接到不同的电压源或电接地。

    SEMICONDUCTOR PROCESS
    40.
    发明申请
    SEMICONDUCTOR PROCESS 有权
    半导体工艺

    公开(公告)号:US20130316506A1

    公开(公告)日:2013-11-28

    申请号:US13479279

    申请日:2012-05-24

    Abstract: A semiconductor process includes the following steps. A gate structure is formed on a substrate. A main spacer is formed on the substrate beside the gate structure. A source/drain is formed in the substrate beside the main spacer. After the source/drain is formed, an epitaxial structure is formed in the substrate beside the main spacer. A gate structure may be respectively formed in a first area and a second area of a substrate. A main spacer is formed on the substrate respectively beside the two gate structures. A source/drain is formed in the substrate respectively beside the two spacers. After the two source/drains are formed, an epitaxial structure is formed in the substrate respectively beside the main spacers.

    Abstract translation: 半导体工艺包括以下步骤。 在基板上形成栅极结构。 在栅极结构旁边的基板上形成主间隔物。 源极/漏极形成在主间隔物旁边的衬底中。 在形成源极/漏极之后,在主间隔物旁边的衬底中形成外延结构。 栅极结构可以分别形成在衬底的第一区域和第二区域中。 在衬底上分别在两个栅极结构旁边形成主间隔物。 源极/漏极分别在两个间隔物的旁边的衬底中形成。 在形成两个源极/漏极之后,在主衬垫的旁边分别在衬底中形成外延结构。

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