公开(公告)号：US06255098B1

公开(公告)日：2001-07-03

申请号：US09142612

申请日：1998-12-16

Applicant: Tae Kwang Oh ,  Hyung Kwon Kim ,  Kyung Suk Bae ,  Young Seo Park ,  Young Ok Kim ,  Yang Woong Choi ,  Dong Kyu Lee ,  Jung Kee Lee

Inventor： Tae Kwang Oh ,  Hyung Kwon Kim ,  Kyung Suk Bae ,  Young Seo Park ,  Young Ok Kim ,  Yang Woong Choi ,  Dong Kyu Lee ,  Jung Kee Lee

IPC: C12N120

CPC classification number: C12Y301/03008 ,  A23K20/189 ,  C12N9/16 ,  C12R1/07 ,  C12Y301/03026

Abstract: The strain Bacillus sp. DS11 (KCTC 0231BP) is disclosed and a phytase produced by DS11 having the following characteristics: optimum temperature: 65° C.; optimum pH: 7.0; molecular weight: 43,000 dalton; isoelectric point: 5.6; and a specified N-terminal amino acid sequence. The bacterial strain DS11 or the phytase it produces can be used as an animal feed additive.

Abstract translation: 芽孢杆菌菌株 DS11（KCTC 0231BP）和由DS11生产的植酸酶具有以下特征：最适温度：65℃。 最适pH：7.0; 分子量：43,000道尔顿; 等电点：5.6; 和指定的N-末端氨基酸序列。 它产生的细菌菌株DS11或其植酸酶可用作动物饲料添加剂。

公开(公告)号：US20190128158A1

公开(公告)日：2019-05-02

申请号：US16024315

申请日：2018-06-29

Applicant: Dong Kyu LEE

Inventor： Dong Kyu LEE

IPC: F01N1/08 ,  F02B31/04

Abstract: A ramjet generator for an intake/exhaust pipe of the present invention includes: a central jet having a predetermined length and disposed in the intake/exhaust pipe; and a vortex generator having two or more blades connected to the central jet at sides and extending outwards with a predetermined area, in which the blades have elasticity to come in contact with an inner side of the intake/exhaust pipe of an internal combustion engine and form an external shape of the vortex generator to correspond to a shape of the inner side of the intake/exhaust pipe of the internal combustion engine. According to the present invention, it is possible to improve intake/exhaust efficiency of an internal combustion engine by generating a vortex using a ramjet that increases the flow speed of air in an intake/exhaust pipe connecting an engine and an air cleaner for an internal combustion engine.

公开(公告)号：US09564435B2

公开(公告)日：2017-02-07

申请号：US14754400

申请日：2015-06-29

Applicant: Eun-ae Chung ,  Jung-dal Choi ,  Toshiro Nakanishi ,  Yu-bin Kim ,  Gab-jin Nam ,  Dong-kyu Lee ,  Guangfan Jiao

Inventor： Eun-ae Chung ,  Jung-dal Choi ,  Toshiro Nakanishi ,  Yu-bin Kim ,  Gab-jin Nam ,  Dong-kyu Lee ,  Guangfan Jiao

IPC: H01L27/01 ,  H01L27/12 ,  H01L31/0392 ,  H01L27/088 ,  H01L21/8234

CPC classification number: H01L27/0886 ,  H01L21/823412 ,  H01L21/823431 ,  H01L27/1211

Abstract: A semiconductor device includes a substrate having a logic device region including logic devices thereon, and an input/output (I/O) device region including I/O devices thereon adjacent the logic device region. A first fin field-effect transistor (FinFET) on the logic device region includes a first semiconductor fin protruding from the substrate, and a triple-gate structure having a first gate dielectric layer and a first gate electrode thereon. A second FinFET on the I/O device region includes a second semiconductor fin protruding from the substrate, and a double-gate structure having a second gate dielectric layer and a second gate electrode thereon. The first and second gate dielectric layers have different thicknesses. Related devices and fabrication methods are also discussed.

Abstract translation: 半导体器件包括具有其上包括逻辑器件的逻辑器件区域的衬底，以及在其上邻近逻辑器件区域的包括I / O器件的输入/输出（I / O）器件区域。 逻辑器件区域上的第一鳍状场效应晶体管（FinFET）包括从衬底突出的第一半导体鳍片，以及在其上具有第一栅极电介质层和第一栅极电极的三栅极结构。 I / O器件区域上的第二FinFET包括从衬底突出的第二半导体鳍片，以及在其上具有第二栅极介电层和第二栅电极的双栅极结构。 第一和第二栅极电介质层具有不同的厚度。 还讨论了相关设备和制造方法。

公开(公告)号：US08921871B2

公开(公告)日：2014-12-30

申请号：US13088261

申请日：2011-04-15

Applicant: Jin-Goo Kang ,  Mu-Hyun Kim ,  Jae-Bok Kim ,  Dong-Kyu Lee ,  Ji-Young Kim

Inventor： Jin-Goo Kang ,  Mu-Hyun Kim ,  Jae-Bok Kim ,  Dong-Kyu Lee ,  Ji-Young Kim

IPC: H01L33/00 ,  H01L29/04 ,  H01L31/036 ,  H01L27/32 ,  H01L51/52

Abstract: An organic light-emitting display device and a method of manufacturing the same are disclosed. The organic light-emitting display device includes: a substrate, a plurality of pixels on the substrate, a plurality of first electrodes, each disposed in each of the plurality of pixels, a pixel defining layer including a first pixel defining sub-layer disposed between each two adjacent first electrodes, and a second pixel defining sub-layer covering the first pixel defining sub-layer and surface edge portions of each two adjacent first electrodes, an intermediate layer disposed on each of the first electrodes and including an emission layer, and a second electrode configured to face the first electrodes.

公开(公告)号：US20140357061A1

公开(公告)日：2014-12-04

申请号：US14287240

申请日：2014-05-27

Applicant: Sung-Min Kim ,  Ji-Su Kang ,  Dong-Kyu Lee ,  Dong-Ho Cha

Inventor： Sung-Min Kim ,  Ji-Su Kang ,  Dong-Kyu Lee ,  Dong-Ho Cha

IPC: H01L29/66

CPC classification number: H01L29/785 ,  H01L29/66795

Abstract: Provided are a semiconductor device and a method for fabricating the same. The method for fabricating a semiconductor device comprises, providing an active fin and a field insulating film including a first trench disposed on the active fin; forming a second trench through performing first etching of the field insulating film that is disposed on side walls and a lower portion of the first trench; forming a first region and a second region in the field insulating film through performing second etching of the field insulating film that is disposed on side walls and a lower portion of the second trench, the first region is disposed adjacent to the active fin and has a first thickness, and the second region is disposed spaced apart from the active fin as compared with the first region and has a second thickness that is thicker than the first thickness; and forming a gate structure on the active fin and the field insulating film.

Abstract translation: 提供一种半导体器件及其制造方法。 制造半导体器件的方法包括：提供有源鳍片和场绝缘膜，其包括设置在有源鳍片上的第一沟槽; 通过对设置在所述第一沟槽的侧壁和下部的所述场绝缘膜进行第一蚀刻来形成第二沟槽; 通过对设置在所述第二沟槽的侧壁和下部的所述场绝缘膜进行第二蚀刻，在所述场绝缘膜中形成第一区域和第二区域，所述第一区域邻近所述活性鳍片设置，并且具有 与第一区域相比，第二区域与有效翅片间隔开，并且具有比第一厚度厚的第二厚度; 并在有源鳍片和场绝缘膜上形成栅极结构。

公开(公告)号：US20130344618A1

公开(公告)日：2013-12-26

申请号：US13368849

申请日：2012-02-08

Applicant: Hye Jung SEO ,  Sang Min JEON ,  Soo Suk LEE ,  Youn Suk CHOI ,  Jung Nam LEE ,  Joon Hyung LEE ,  Kyung Yeon HAN ,  Dong Kyu LEE ,  Jin Young PARK

Inventor： Hye Jung SEO ,  Sang Min JEON ,  Soo Suk LEE ,  Youn Suk CHOI ,  Jung Nam LEE ,  Joon Hyung LEE ,  Kyung Yeon HAN ,  Dong Kyu LEE ,  Jin Young PARK

IPC: G01N27/72

CPC classification number: G01N27/72 ,  G01N27/745 ,  G01N33/54346

Abstract: A biosensor and method for detecting a target material using an agglomeration of magnetic nanoparticles are provided.

Abstract translation: 提供了一种使用磁性纳米颗粒的聚集来检测靶材料的生物传感器和方法。

公开(公告)号：USD692944S1

公开(公告)日：2013-11-05

申请号：US29416480

申请日：2012-03-22

Applicant: Joo-Hwan Noh ,  Ji-Won Moon ,  Young-Chae Kim ,  Jin-Hong Kim ,  Jong-Hwa Park ,  Hyung-Seok Chang ,  Dong-Kyu Lee ,  Ki-Hyun Yoo ,  Yong-Nam Ahn

Designer： Joo-Hwan Noh ,  Ji-Won Moon ,  Young-Chae Kim ,  Jin-Hong Kim ,  Jong-Hwa Park ,  Hyung-Seok Chang ,  Dong-Kyu Lee ,  Ki-Hyun Yoo ,  Yong-Nam Ahn

公开(公告)号：US20130067897A1

公开(公告)日：2013-03-21

申请号：US13699445

申请日：2011-05-23

Applicant: Young Tae Kim ,  Kwang Hee Nam ,  Chun Ho Baek ,  Dong Kyu Lee

Inventor： Young Tae Kim ,  Kwang Hee Nam ,  Chun Ho Baek ,  Dong Kyu Lee

IPC: F01N13/10

CPC classification number: F01N13/10 ,  F01N13/107 ,  F01N2260/06

Abstract: An exhaust manifold includes: an inlet portion which collects exhaust gas discharged through a first to a fourth exhaust ports; an outlet portion discharging the exhaust gas; and a tube portion connecting the inlet and the outlet portions. The inlet portion comprises: a first inlet portion one end of which communicates with the first and the second exhaust ports; and a second inlet portion one end of which communicates with the third and the fourth exhaust ports. Since the inlet portion is provided as two considering the combustion sequence, the productability and the economic feasibility can be enhanced, and the surrounding space can be enlarged to enhance the workability, and a simple exterior appearance can be obtained, and interference between exhaust gases can be effectively prevented, and since the size of the exhaust manifold can be increased, an engine load can be reduced to improve the fuel mileage.

Abstract translation: 排气歧管包括：入口部分，其收集通过第一至第四排气口排出的废气; 排出废气的出口部分; 以及连接入口部和出口部的管部。 入口部分包括：第一入口部分，其一端与第一和第二排气口连通; 并且其一端与第三和第四排气口连通的第二入口部分。 由于考虑到燃烧顺序，入口部分被设置为两个，所以可以提高生产性和经济可行性，并且可以扩大周围空间以提高可操作性，并且可以获得简单的外观，并且排气之间的干扰可以 能够有效地防止排气歧管的尺寸，能够减小发动机的负荷，提高燃料利用率。

公开(公告)号：US08253322B2

公开(公告)日：2012-08-28

申请号：US12348098

申请日：2009-01-02

Applicant: Dong-Kyu Lee

Inventor： Dong-Kyu Lee

IPC: H01L51/00

CPC classification number: H01L51/5284 ,  H01L27/322 ,  H01L27/3246 ,  H01L51/524

Abstract: An organic light emitting display device includes a substrate, a display unit that is formed on the substrate, and includes a plurality of organic light emitting regions that emit light, a sealing member disposed above the display unit, and one or more light absorption pattern units formed on a plurality of non-light emitting regions of the display unit.

Abstract translation: 一种有机发光显示装置，包括：基板，形成在基板上的显示单元，具有发光的多个有机发光区域;配置在显示单元上方的密封构件;以及一个以上的吸光图案单元 形成在显示单元的多个非发光区域上。

公开(公告)号：US20110237037A1

公开(公告)日：2011-09-29

申请号：US13151494

申请日：2011-06-02

Applicant: Tai-Su Park ,  Jung-Sup Oh ,  Gun-Joong Lee ,  Jung-Soo An ,  Dong-Kyu Lee ,  Jung-Geun Park ,  Jeong-Do Ryu ,  Dong-Chan Kim ,  Seong-Hoon Jeong ,  Si-Young Choi ,  Yu-Gyun Shin ,  Jong-Ryeol Yoo ,  Jong-Hoon Kang

Inventor： Tai-Su Park ,  Jung-Sup Oh ,  Gun-Joong Lee ,  Jung-Soo An ,  Dong-Kyu Lee ,  Jung-Geun Park ,  Jeong-Do Ryu ,  Dong-Chan Kim ,  Seong-Hoon Jeong ,  Si-Young Choi ,  Yu-Gyun Shin ,  Jong-Ryeol Yoo ,  Jong-Hoon Kang

IPC: H01L21/336

CPC classification number: H01L29/66795 ,  H01L21/28211 ,  H01L21/823412 ,  H01L27/105 ,  H01L27/10876 ,  H01L27/10879 ,  H01L27/11 ,  H01L29/4236 ,  H01L29/51 ,  H01L29/66621 ,  H01L29/7851

Abstract: In methods of manufacturing a recessed channel array transistor, a recess may be formed in an active region of a substrate. A plasma oxidation process may be performed on the substrate to form a preliminary gate oxide layer on an inner surface of the recess and an upper surface of the substrate. Moistures may be absorbed in a surface of the preliminary gate oxide layer to form a gate oxide layer. A gate electrode may be formed on the gate oxide layer to fill up the recess. Source/drain regions may be formed in an upper surface of the substrate at both sides of the gate electrode. Thus, the oxide layer may have a uniform thickness distribution and a dense structure.

Abstract translation: 在制造凹陷通道阵列晶体管的方法中，可以在衬底的有源区中形成凹部。 可以在衬底上进行等离子体氧化处理，以在凹槽的内表面和衬底的上表面上形成预备栅氧化层。 可以在预选择栅极氧化物层的表面吸收水分以形成栅极氧化物层。 可以在栅极氧化物层上形成栅电极以填充凹部。 源极/漏极区域可以形成在栅电极的两侧的衬底的上表面中。 因此，氧化物层可以具有均匀的厚度分布和致密结构。