公开(公告)号：US07611964B2

公开(公告)日：2009-11-03

申请号：US12163584

申请日：2008-06-27

申请人： Jong Hye Cho ,  Whee Won Cho ,  Eun Soo Kim

发明人： Jong Hye Cho ,  Whee Won Cho ,  Eun Soo Kim

IPC分类号： H01L21/76

CPC分类号： H01L21/76232 ,  H01L27/11521

摘要： The present invention relates to a method of forming an isolation layer of a semiconductor memory device. According to a method of fabricating a semiconductor memory device in accordance with an aspect of the present invention, a tunnel insulating layer and a charge trap layer are formed over a semiconductor substrate. An isolation trench is formed by etching the charge trap layer and the tunnel insulating layer. A passivation layer is formed on the entire surface including the isolation trench. A first insulating layer is formed at a bottom of the isolation trench. Portions of the passivation layer, which are oxidized in the formation process of the first insulating layer, are removed. A second insulating layer is formed on the entire surface including the first insulating layer.

摘要翻译： 本发明涉及形成半导体存储器件的隔离层的方法。 根据本发明的半导体存储器件的制造方法，在半导体衬底上形成隧道绝缘层和电荷俘获层。 通过蚀刻电荷陷阱层和隧道绝缘层形成隔离沟槽。 在包括隔离沟槽的整个表面上形成钝化层。 第一绝缘层形成在隔离沟槽的底部。 去除在第一绝缘层的形成过程中被氧化的钝化层的部分。 在包括第一绝缘层的整个表面上形成第二绝缘层。

公开(公告)号：US07573014B2

公开(公告)日：2009-08-11

申请号：US12119562

申请日：2008-05-13

申请人： Young-Hoon Park ,  Tae-Seok Oh ,  Eun-Soo Kim ,  June-Taeg Lee

发明人： Young-Hoon Park ,  Tae-Seok Oh ,  Eun-Soo Kim ,  June-Taeg Lee

IPC分类号： H01L27/00 ,  G01J3/50

CPC分类号： H01L31/02162 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14685 ,  H01L31/02161

摘要： Disclosed is an image sensor and method of fabricating the same. The image sensor includes a photoelectric transformation region formed in a semiconductor substrate, and pluralities of interlayer dielectric films formed over the photoelectric transformation regions. The interlayer dielectric films contain multilevel interconnection layers. A color filter layer is disposed in a well region formed in the interlayer dielectric films over the photoelectric transformation region. A passivation layer is interposed between the color filter layer and the interlayer dielectric films.

摘要翻译： 公开了一种图像传感器及其制造方法。 图像传感器包括形成在半导体衬底中的光电转换区域和形成在光电转换区域上的多个层间电介质膜。 层间绝缘膜包含多层互连层。 滤色器层设置在形成于光电转换区域的层间电介质膜的阱区中。 钝化层插在滤色器层和层间绝缘膜之间。

公开(公告)号：US20090098732A1

公开(公告)日：2009-04-16

申请号：US11965368

申请日：2007-12-27

申请人： Whee Won CHO ,  Jung Geun Kim ,  Eun Soo Kim

发明人： Whee Won CHO ,  Jung Geun Kim ,  Eun Soo Kim

IPC分类号： H01L21/768

CPC分类号： H01L21/76804 ,  H01L21/76831

摘要： The present invention relates to a semiconductor device and a method of forming a contact plug of a semiconductor device. According to the method, a first dielectric layer is formed on a semiconductor substrate in which junction regions are formed. A hard mask is formed on the first dielectric layer. The hard mask and the first dielectric layer corresponding to the junction regions are etched to form trenches. Spacers are formed on sidewalls of the trenches. Contact holes are formed in the first dielectric layer using an etch process employing the spacers and the hard mask so that the junction regions are exposed. The contact holes are gap filled with a conductive material, thus forming contact plugs. Accordingly, bit lines can be easily formed on the contact plugs formed at narrow spaces with a high density.

摘要翻译： 本发明涉及半导体器件和形成半导体器件的接触插塞的方法。 根据该方法，在形成有接合区域的半导体基板上形成第一电介质层。 在第一电介质层上形成硬掩模。 对应于接合区域的硬掩模和第一介电层被蚀刻以形成沟槽。 间隙形成在沟槽的侧壁上。 使用使用间隔物和硬掩模的蚀刻工艺在第一介电层中形成接触孔，使得接合区域露出。 接触孔用导电材料间隙填充，从而形成接触塞。 因此，可以容易地在高密度的狭窄空间形成的接触塞上形成位线。

公开(公告)号：US20090023279A1

公开(公告)日：2009-01-22

申请号：US12131626

申请日：2008-06-02

申请人： Eun Soo Kim ,  Jung Geun Kim ,  Suk Joong Kim

发明人： Eun Soo Kim ,  Jung Geun Kim ,  Suk Joong Kim

IPC分类号： H01L21/311 ,  H01L21/28

CPC分类号： H01L21/764 ,  H01L27/115 ,  H01L27/11521

摘要： The present invention relates to a method of fabricating a flash memory device and includes forming an air-gap having a low dielectric constant between word lines and floating gates. Further, a tungsten nitride (WN) layer is formed on sidewalls of a tungsten (W) layer for a control gate. Hence, the cross section of the control gate that is finally formed can be increased while preventing abnormal oxidization of the tungsten layer in a subsequent annealing process. The method of the present invention can improve interference between neighboring word lines and, thus improve the reliability of a device. Accordingly, a robust high-speed device can be implemented.

摘要翻译： 本发明涉及一种制造闪速存储器件的方法，包括在字线和浮栅之间形成具有低介电常数的气隙。 此外，在用于控制栅极的钨（W）层的侧壁上形成氮化钨（WN）层。 因此，可以提高最终形成的控制栅极的横截面，同时防止随后的退火工艺中钨层的异常氧化。 本发明的方法可以改善相邻字线之间的干扰，从而提高设备的可靠性。 因此，可以实现鲁棒的高速设备。

公开(公告)号：US20090004819A1

公开(公告)日：2009-01-01

申请号：US11963906

申请日：2007-12-24

申请人： Whee Won Cho ,  Eun Soo Kim ,  Suk Joong Kim

发明人： Whee Won Cho ,  Eun Soo Kim ,  Suk Joong Kim

IPC分类号： H01L21/76

CPC分类号： H01L27/115 ,  H01L27/11521

摘要： In one aspect of the inventive method, a tunnel insulating film, a first conductive layer, and an isolation mask pattern are formed over a semiconductor substrate. The first conductive layer and the tunnel insulating film are patterned along the isolation mask pattern. A trench is formed in the semiconductor substrate. The trench is gap filled with a first insulating film. A polishing process is performed in order to expose the first conductive layer. A height of the first insulating film is lowered. The first conductive layer on the first insulating film is gap-filled with a second insulating film.

摘要翻译： 在本发明方法的一个方面中，在半导体衬底上形成隧道绝缘膜，第一导电层和隔离掩模图案。 第一导电层和隧道绝缘膜沿着隔离掩模图案被图案化。 在半导体衬底中形成沟槽。 沟槽填充有第一绝缘膜。 进行抛光处理以露出第一导电层。 第一绝缘膜的高度降低。 第一绝缘膜上的第一导电层用第二绝缘膜间隙填充。

公开(公告)号：US20090004818A1

公开(公告)日：2009-01-01

申请号：US11956865

申请日：2007-12-14

申请人： Seung Woo Shin ,  Eun Soo Kim ,  Suk Joong Kim ,  Jong Hye Cho

发明人： Seung Woo Shin ,  Eun Soo Kim ,  Suk Joong Kim ,  Jong Hye Cho

IPC分类号： H01L21/762

CPC分类号： H01L21/76232 ,  H01L27/11521

摘要： Disclosed herein is a method of fabricating a semiconductor flash memory device, which method avoids and prevents damage to the conductive layer of a floating gate. The disclosed method can prevent a reduction in the charge trap density characteristics and improve the yield of the device.

摘要翻译： 本文公开了一种制造半导体闪速存储器件的方法，该方法避免并防止对浮动栅极的导电层的损坏。 所公开的方法可以防止电荷陷阱密度特性的降低并且提高器件的产量。

公开(公告)号：US20080251697A1

公开(公告)日：2008-10-16

申请号：US12119562

申请日：2008-05-13

申请人： Young-Hoon PARK ,  Tae-Seok OH ,  Eun-Soo KIM ,  June-Taeg LEE

发明人： Young-Hoon PARK ,  Tae-Seok OH ,  Eun-Soo KIM ,  June-Taeg LEE

IPC分类号： H01L27/00

CPC分类号： H01L31/02162 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14685 ,  H01L31/02161

摘要： Disclosed is an image sensor and method of fabricating the same. The image sensor includes a photoelectric transformation region formed in a semiconductor substrate, and pluralities of interlayer dielectric films formed over the photoelectric transformation regions. The interlayer dielectric films contain multilevel interconnection layers. A color filter layer is disposed in a well region formed in the interlayer dielectric films over the photoelectric transformation region. A passivation layer is interposed between the color filter layer and the interlayer dielectric films.

摘要翻译： 公开了一种图像传感器及其制造方法。 图像传感器包括形成在半导体衬底中的光电转换区域和形成在光电转换区域上的多个层间电介质膜。 层间绝缘膜包含多层互连层。 滤色器层设置在形成于光电转换区域的层间电介质膜的阱区中。 钝化层插在滤色器层和层间绝缘膜之间。

公开(公告)号：US20080025564A1

公开(公告)日：2008-01-31

申请号：US11880224

申请日：2007-07-19

申请人： Eun-Soo Kim ,  Dong-Choon Hwang ,  Dong-Hak Shin

发明人： Eun-Soo Kim ,  Dong-Choon Hwang ,  Dong-Hak Shin

IPC分类号： G06K9/00

CPC分类号： H04N1/32154 ,  G06T1/0021 ,  G06T2201/0052 ,  H04N1/3217 ,  H04N13/261 ,  H04N2201/3236

摘要： An apparatus and method for watermarking that uses elemental images of an integrated image having three-dimensional information as a watermark are disclosed. The watermarking apparatus in accordance with an embodiment of the present invention includes i) a computational pickup unit, which picks up an elemental image watermark computationally by placing an object three-dimensionally, ii) an embedding process unit, which embeds into a two-dimensional image the elemental image watermark obtained by the computational pickup unit, iii) an extraction process unit, which extracts the elemental image watermark by receiving through a transmission channel the watermarked two-dimensional image embedded by the embedding process unit, and iv) a computational reconstruction unit, which computationally reconstructs the elemental image watermark extracted by the extraction process unit to a distance-based image.

摘要翻译： 公开了一种使用具有三维信息的集成图像的元素图像作为水印的水印加密的装置和方法。 根据本发明实施例的电子水印装置包括：i）计算拾取单元，其通过三维放置对象来计算地拾取基本图像水印，ii）嵌入处理单元，其嵌入二维 对由计算机单元获得的元素图像水印进行成像，iii）提取处理单元，其通过传输通道接收由嵌入处理单元嵌入的水印二维图像提取基本图像水印，以及iv）计算重建 单元，其将由提取处理单元提取的元素图像水印计算重建为基于距离的图像。

公开(公告)号：US20060291051A1

公开(公告)日：2006-12-28

申请号：US11514553

申请日：2006-08-31

申请人： Eun-Soo Kim ,  Sun-Joo Jang

发明人： Eun-Soo Kim ,  Sun-Joo Jang

IPC分类号： G02B27/22

CPC分类号： G02B27/2292 ,  H04N13/302

摘要： A three-dimensional image display device is disclosed. In one embodiment, the device uses a curved transmissive screen and reflectors to minimize the space associated with the device when increasing the size of the three-dimensional image. By placing a physically driven background screen over the projected image and screen, excessively diffused reflection of the Fresnel lenses is eliminated. High-resolution real-time video images are provided as three-dimensional images by realizing three-dimensional images with enhanced perspective as if they are floating in space. According to one embodiment of the invention, a distortion of the three-dimensional image is minimized.

公开(公告)号：US5817954A

公开(公告)日：1998-10-06

申请号：US750701

申请日：1996-12-16

申请人： Sung Hyun Kahng ,  Sung Rok Cho ,  Soo Hyung Lee ,  Eun Soo Kim ,  Kun Young Lee ,  Jae Ryoung Oh

发明人： Sung Hyun Kahng ,  Sung Rok Cho ,  Soo Hyung Lee ,  Eun Soo Kim ,  Kun Young Lee ,  Jae Ryoung Oh

IPC分类号： G01N1/00 ,  G01N33/18 ,  G01N35/00 ,  G01N35/10

CPC分类号： G01N35/00 ,  G01N33/1886 ,  G01N2035/1062

摘要： The present invention provides an automated analyzing apparatus which comprises: a syringe unit for inhaling or transfering liquid such as sample, reagents and washing solution by moving the piston (12) by a certain distance; a built-in stirring bar (31) located within the syringe barrel (11); a driving unit for rotating the stirring bar (31); a driving means (13) for moving the piston (12) up and down; several connection paths (15a-15f) located in the lower part of the syringe barrel (11) or in the piston (12) where the sample, the reagents, the washing solution, and air can be provided or discharged; 2-way on/off valves (16a-16f) connected to each connection path (15a-15f); detecting means (3) positioned in the outer wall of the syringe barrel (11) perpendicular to the piston shaft (14); additional heating and cooling unit (4) for temperature control or sample digestion; control unit (6) for controlling the driving means (13), the detector (2) and valves (16a-16f) described above.

摘要翻译： PCT No.PCT / KR96 / 00172 Sec。 371日期1996年12月16日第 102（e）日期1996年12月16日PCT提交1996年10月8日PCT公布。 公开号WO97 / 14039 日期1997年04月17日本发明提供了一种自动分析装置，其包括：通过将活塞（12）移动一定距离来吸入或转移样品，试剂和洗涤液等液体的注射器单元; 位于注射器筒（11）内的内置搅拌棒（31）; 用于旋转搅拌棒（31）的驱动单元; 用于上下移动活塞（12）的驱动装置（13）; 几个连接路径（15a-15f）位于注射器筒体（11）的下部或活塞（12）中，其中可以提供或排出样品，试剂，洗涤溶液和空气; 连接到每个连接路径（15a-15f）的2通开/关阀（16a-16f）; 检测装置（3），其定位在与所述活塞轴（14）垂直的所述注射器筒（11）的外壁中; 附加的加热和冷却单元（4）用于温度控制或样品消化; 控制单元（6），用于控制上述驱动装置（13），检测器（2）和阀（16a-16f）。