公开(公告)号：US20080268535A1

公开(公告)日：2008-10-30

申请号：US12093381

申请日：2006-11-17

Applicant: Gil-Ja Jhon ,  So-Yeop Han ,  Jin-Kyung Limb ,  Hyun-Jin Cho ,  Shin-Young Kim

Inventor： Gil-Ja Jhon ,  So-Yeop Han ,  Jin-Kyung Limb ,  Hyun-Jin Cho ,  Shin-Young Kim

IPC: C12N5/08

CPC classification number: C12N5/0644 ,  C12N2501/999 ,  C12N2502/1394 ,  C12N2506/30

Abstract: Disclosed herein is a method of inducing the differentiation of leukemia cells derived from human bone marrow into megakaryocytes or thrombocytes, comprising the steps of: (a) culturing OP9 cells; (b) layering leukemia cells derived from human bone marrow over the OP9 cells; and (c) incubating the cells in the presence of a compound ((R)-NALPCE) represented by Chemical Formula 1.

Abstract translation: 本文公开了一种诱导人骨髓白血病细胞分化为巨核细胞或血小板细胞的方法，包括以下步骤：（a）培养OP9细胞; （b）在OP9细胞上分层衍生自人骨髓的白血病细胞; 和（c）在由化学式1表示的化合物（（R）-NALPCE）存在下孵育细胞。

公开(公告)号：US20080031036A1

公开(公告)日：2008-02-07

申请号：US11615983

申请日：2006-12-24

Applicant: Hyun-Jin Cho

Inventor： Hyun-Jin Cho

IPC: G11C11/34

CPC classification number: G11C13/0004

Abstract: A switching device and methods of making and operating the same are provided. In one aspect, a method of operating a switching device is provided that includes providing a MOS transistor that has a gate, a source region, a drain region and a body region. A bipolar transistor is provided that has a collector, a base and an emitter. The body region of the MOS transistor serves as the base of the bipolar transistor and the drain region of the MOS transistor serves as the collector of the bipolar transistor. Activation of the MOS transistor causes the bipolar transistor to turn on. The MOS transistor is activated to turn on the bipolar transistor and the bipolar transistor delivers current to the source region.

Abstract translation: 提供了一种开关装置及其制作和操作方法。 一方面，提供了一种操作开关器件的方法，其包括提供具有栅极，源极区域，漏极区域和体区域的MOS晶体管。 提供了具有集电极，基极和发射极的双极晶体管。 MOS晶体管的体区用作双极晶体管的基极，MOS晶体管的漏极区域用作双极晶体管的集电极。 MOS晶体管的激活导致双极晶体管导通。 MOS晶体管被激活以导通双极晶体管，并且双极晶体管将电流传送到源极区域。

公开(公告)号：US06885581B2

公开(公告)日：2005-04-26

申请号：US10472737

申请日：2002-04-05

Applicant: Farid Nemati ,  Hyun-Jin Cho ,  Robert Homan Igehy

Inventor： Farid Nemati ,  Hyun-Jin Cho ,  Robert Homan Igehy

IPC: G11C7/00 ,  G11C11/00 ,  G11C11/39 ,  H01L29/866

CPC classification number: G11C11/39

Abstract: A dynamically-operating restoration circuit (106) is used to apply a voltage or current restore pulse signal to thyristor-based memory cells (108) and therein restore data in the cell using the internal positive feedback loop of the thyristor (110). In one example implementation, the internal positive feedback loop in the thyristor (110) is used to restore the conducting state of a device after the thyristor current drops below the holding current. A pulse and/or periodic waveform are defined and applied to ensure that the thyristor is not released from its conducting state. The time average of the periodic restore current in the thyristor may be lower than the holding current threshold. While not necessarily limited to memory cells that are thyristor-based, various embodiments of the invention have been found to be the particularly useful for high-speed, low-power memory cells in which a thin capacitively-coupled thyristor is used to provide a bi-stable storage element.

Abstract translation: 使用动态操作的恢复电路（106）将电压或电流恢复脉冲信号施加到基于晶闸管的存储器单元（108），并且其中使用晶闸管（110）的内部正反馈环路在单元中恢复数据。 在一个示例实现中，晶闸管（110）中的内部正反馈环路用于在晶闸管电流下降到保持电流之前恢复器件的导通状态。 定义并施加脉冲和/或周期波形以确保晶闸管不从其导通状态释放。 晶闸管周期性恢复电流的时间平均值可能低于保持电流阈值。 虽然不一定限于基于晶闸管的存储器单元，但是已经发现本发明的各种实施例对于其中使用薄电容耦合晶闸管来提供双向的高速，低功率存储器单元特别有用 稳定存储元件

公开(公告)号：US06727528B1

公开(公告)日：2004-04-27

申请号：US09815213

申请日：2001-03-22

Applicant: Scott Robins ,  Andrew Horch ,  Farid Nemati ,  Hyun-Jin Cho

Inventor： Scott Robins ,  Andrew Horch ,  Farid Nemati ,  Hyun-Jin Cho

IPC: H01L2974

CPC classification number: H01L29/66363 ,  H01L21/76229 ,  H01L21/76237 ,  H01L21/763 ,  H01L27/0617 ,  H01L27/0817

Abstract: A semiconductor device includes a thyristor designed to reduce or eliminate manufacturing and operational difficulties commonly experienced in the formation and operation of NDR devices. According to one example embodiment of the present invention, the semiconductor substrate is trenched adjacent a doped or dopable substrate region, which is formed to include at least two vertically-adjacent thyristor regions of different polarity. A capacitively-coupled control port for the thyristor is coupled to at least one of the thyristor regions. The trench also includes a dielectric material for electrically insulating the vertically-adjacent thyristor regions. The thyristor is electrically connected to other circuitry in the device, such as a transistor, and used to form a device, such as a memory cell.

Abstract translation: 半导体器件包括设计用于减少或消除在NDR器件的形成和操作中通常经历的制造和操作困难的晶闸管。 根据本发明的一个示例性实施例，半导体衬底在掺杂或可掺杂的衬底区域附近被沟槽，该衬底区域被形成为包括具有不同极性的至少两个垂直相邻的晶闸管区域。 用于晶闸管的电容耦合控制端口耦合到至少一个晶闸管区域。 沟槽还包括用于使垂直相邻的晶闸管区域电绝缘的电介质材料。 晶闸管电连接到器件中的其它电路，例如晶体管，并用于形成诸如存储器单元的器件。

公开(公告)号：US06462359B1

公开(公告)日：2002-10-08

申请号：US09814980

申请日：2001-03-22

Applicant: Farid Nemati ,  Hyun-Jin Cho ,  Scott Robins

Inventor： Farid Nemati ,  Hyun-Jin Cho ,  Scott Robins

IPC: H01L2974

CPC classification number: G11C11/39 ,  H01L29/7436 ,  H01L29/749

Abstract: A semiconductor device having a thyristor-based memory device exhibits improved stability under adverse operating conditions related to temperature, noise, electrical disturbances and light. In one particular example embodiment of the present invention, a semiconductor device includes a thyristor-based memory device that uses a shunt between a base and emitter region in a thyristor that effects a leakage current in the thyristor. The thyristor includes a capacitively coupled control port and anode and cathode end portions. Each of the end portions has an emitter region and an adjacent base region, and the current shunt is located between the emitter and base region of one of the end portions of the thyristor. The current shunt is configured and arranged to shunt low-level current between the emitter region and the adjacent base region, and in doing so improves the ability of the device to operate under adverse conditions that would, absent the shunt, result in inadvertent turn on, while keeping the standby current of the memory device to an acceptably low level.

Abstract translation: 具有基于晶闸管的存储器件的半导体器件在与温度，噪声，电扰动和光线相关的不利操作条件下表现出改进的稳定性。 在本发明的一个具体示例性实施例中，半导体器件包括基于晶闸管的存储器件，其使用晶闸管中的基极和发射极区之间的分流器，其实现晶闸管中的漏电流。 晶闸管包括电容耦合的控制端口和阳极和阴极端部分。 每个端部具有发射极区域和相邻的基极区域，并且电流分流器位于晶闸管的一个端部的发射极和基极区域之间。 电流分流器被配置和布置成在发射极区域和相邻基极区域之间分流低电平电流，并且在这样做时改善了器件在不利条件下操作的能力，这在不存在分流的情况下导致无意中导通 同时将存储器件的待机电流保持在可接受的低电平。

公开(公告)号：US08633918B2

公开(公告)日：2014-01-21

申请号：US12971251

申请日：2010-12-17

Applicant: Jin-Hwan Kim ,  Hyun-Min Cho ,  Guk-Hyun Kim ,  Jong-Hee Kim ,  Hyun-Jin Cho

Inventor： Jin-Hwan Kim ,  Hyun-Min Cho ,  Guk-Hyun Kim ,  Jong-Hee Kim ,  Hyun-Jin Cho

IPC: G06F3/042

CPC classification number: G06F3/0416 ,  G06F3/0428

Abstract: A light waveguide has a rectangular plate shape and is configured to totally reflect internal light arriving at an angle greater than a critical angle. Light emitting parts are disposed at corners of the light waveguide. Each of the light emitting parts emits light once in a period. A first light receiving part is disposed along a first side surface of the light waveguide, and receives light emitted from the light emitting parts adjacent to a second side surface facing the first side surface of the light waveguide. The second light receiving part is disposed along the second side surface of the light waveguide, and receives light emitted from the light emitting parts adjacent to the first side surface. A detecting part detects a touch position based on an amount of the light received by the first and second light receiving parts.

Abstract translation: 光波导具有矩形板形状并且被配置为完全反射以大于临界角的角度到达的内部光。 发光部件设置在光波导的角部。 每个发光部分在一段时间内发光一次。 第一光接收部分沿着光波导的第一侧表面设置，并且接收从与光波导的第一侧表面相对的第二侧表面邻近的发光部分发射的光。 第二光接收部分沿着光波导的第二侧表面设置，并且接收从与第一侧表面相邻的发光部分发射的光。 检测部分基于由第一和第二光接收部分接收的光量来检测触摸位置。

公开(公告)号：US08184477B2

公开(公告)日：2012-05-22

申请号：US13243772

申请日：2011-09-23

Applicant: Hyun-Jin Cho

Inventor： Hyun-Jin Cho

IPC: G11C11/34

CPC classification number: G11C13/0004

Abstract: A switching device and methods of making and operating the same are provided. In one aspect, a method of operating a switching device is provided that includes providing a MOS transistor that has a gate, a source region, a drain region and a body region. A bipolar transistor is provided that has a collector, a base and an emitter. The body region of the MOS transistor serves as the base of the bipolar transistor and the drain region of the MOS transistor serves as the collector of the bipolar transistor. Activation of the MOS transistor causes the bipolar transistor to turn on. The MOS transistor is activated to turn on the bipolar transistor and the bipolar transistor delivers current to the source region.

Abstract translation: 提供了一种开关装置及其制作和操作方法。 一方面，提供一种操作开关器件的方法，其包括提供具有栅极，源极区域，漏极区域和体区域的MOS晶体管。 提供了具有集电极，基极和发射极的双极晶体管。 MOS晶体管的体区用作双极晶体管的基极，MOS晶体管的漏极区域用作双极晶体管的集电极。 MOS晶体管的激活导致双极晶体管导通。 MOS晶体管被激活以导通双极晶体管，并且双极晶体管将电流传送到源极区域。

公开(公告)号：US20110221997A1

公开(公告)日：2011-09-15

申请号：US12971251

申请日：2010-12-17

Applicant: Jin-Hwan Kim ,  Hyun-Min Cho ,  Guk-Hyun Kim ,  Jong-Hee Kim ,  Hyun-Jin Cho

Inventor： Jin-Hwan Kim ,  Hyun-Min Cho ,  Guk-Hyun Kim ,  Jong-Hee Kim ,  Hyun-Jin Cho

IPC: G02F1/1335 ,  G06F3/042

CPC classification number: G06F3/0416 ,  G06F3/0428

Abstract: A light waveguide has a rectangular plate shape and is configured to totally reflect internal light arriving at an angle greater than a critical angle. Light emitting parts are disposed at corners of the light waveguide. Each of the light emitting parts emits light once in a period. A first light receiving part is disposed along a first side surface of the light waveguide, and receives light emitted from the light emitting parts adjacent to a second side surface facing the first side surface of the light waveguide. The second light receiving part is disposed along the second side surface of the light waveguide, and receives light emitted from the light emitting parts adjacent to the first side surface. A detecting part detects a touch position based on an amount of the light received by the first and second light receiving parts.

Abstract translation: 光波导具有矩形板形状并且被配置为完全反射以大于临界角的角度到达的内部光。 发光部件设置在光波导的角部。 每个发光部分在一段时间内发光一次。 第一光接收部分沿着光波导的第一侧表面设置，并且接收从与光波导的第一侧表面相对的第二侧表面邻近的发光部分发射的光。 第二光接收部分沿着光波导的第二侧表面设置，并且接收从与第一侧表面相邻的发光部分发射的光。 检测部分基于由第一和第二光接收部分接收的光量来检测触摸位置。

公开(公告)号：US20110204429A1

公开(公告)日：2011-08-25

申请号：US13098193

申请日：2011-04-29

Applicant: Hyun-Jin CHO ,  Sang H. DHONG ,  Jung-Suk GOO ,  Gurupada MANDAL

Inventor： Hyun-Jin CHO ,  Sang H. DHONG ,  Jung-Suk GOO ,  Gurupada MANDAL

IPC: H01L27/108

CPC classification number: H01L27/10802 ,  H01L27/108 ,  H01L27/1082 ,  H01L27/1087 ,  H01L29/7841

Abstract: A semiconductor memory cell is provided that includes a trench capacitor and an access transistor. The access transistor comprises a source region, a drain region, a gate structure overlying the trench capacitor, and an active body region that couples the drain region to the source region. The active body region directly contacts the trench capacitor.

Abstract translation: 提供一种包括沟槽电容器和存取晶体管的半导体存储单元。 存取晶体管包括源区域，漏极区域，覆盖沟槽电容器的栅极结构以及将漏极区域耦合到源极区域的有源体区域。 有源体区域直接接触沟槽电容器。

公开(公告)号：US07858449B2

公开(公告)日：2010-12-28

申请号：US12367891

申请日：2009-02-09

Applicant: Kevin J. Yang ,  Farid Nemati ,  Scott Robins ,  James D. Plummer ,  Hyun-Jin Cho

Inventor： Kevin J. Yang ,  Farid Nemati ,  Scott Robins ,  James D. Plummer ,  Hyun-Jin Cho

IPC: H01L29/72

CPC classification number: G11C11/39 ,  H01L29/7436 ,  H01L29/749

Abstract: In a method of fabricating a semiconductor memory device, a thyristor may be formed in a layer of semiconductor material. Carbon may be implanted and annealed in a base-emitter junction region for the thyristor to affect leakage characteristics. The density of the carbon and/or a bombardment energy and/or an anneal therefore may be selected to establish a low-voltage, leakage characteristic for the junction substantially greater than its leakage absent the carbon. In one embodiment, an anneal of the implanted carbon may be performed in common with an activation for other implant regions the semiconductor device.

Abstract translation: 在制造半导体存储器件的方法中，晶闸管可以形成在半导体材料层中。 可以在用于晶闸管的基极 - 发射极结区域中注入和退火碳以影响泄漏特性。 因此可以选择碳的密度和/或轰击能量和/或退火，以建立连接的低电压，泄漏特性，基本上大于其没有碳的泄漏。 在一个实施例中，注入碳的退火可以与半导体器件的其它注入区域的激活共同进行。