摘要:
Novel, polarization-insensitive, birefringent, broadband tunable filter arrangements that allow high throughput, based on a combination of tunable birefringent layers or polarization dependent filters, in combination with one or more of the following components (i) thin film achromatic quarter waveplates based on the form birefringence of dielectric subwavelength grating structures, (ii) nano wire-grid polarizers made of metallic wire grids; (iii) omnidirectional dielectric mirrors, (iv) polarization conversion mirrors, (v) reflective polarized beam splitters for circularly polarized light, (vi) metallic subwavelength gratings with lines having Gaussian profile, and (vii) Faraday mirror. All of these components may be implemented in thin film form on one or more substrates, such that a compact and cost effective filter can be produced. The birefringent layers can be any birefringent or magneto-optic layer but especially liquid crystals. The use of novel polarization conversion disposition of the components of the filter results in a filter having high throughput.
摘要:
A method and system to measure misalignment error between two overlying or interlaced periodic structures are proposed. The overlying or interlaced periodic structures are illuminated by incident radiation, and the diffracted radiation of the incident radiation by the overlying or interlaced periodic structures are detected to provide an output signal. The misalignment between the overlying or interlaced periodic structures may then be determined from the output signal.
摘要:
A method and system to measure misalignment error between two overlying or interlaced periodic structures are proposed. The overlying or interlaced periodic structures are illuminated by incident radiation, and the diffracted radiation of the incident radiation by the overlying or interlaced periodic structures are detected to provide an output signal. The misalignment between the overlying or interlaced periodic structures may then be determined from the output signal.
摘要:
Before the diffraction from a diffracting structure on a semiconductor wafer is measured, where necessary, the film thickness and index of refraction of the films underneath the structure are first measured using spectroscopic reflectometry or spectroscopic ellipsometry. A rigorous model is then used to calculate intensity or ellipsometric signatures of the diffracting structure. The diffracting structure is then measured using a spectroscopic scatterometer using polarized and broadband radiation to obtain an intensity or ellipsometric signature of the diffracting structure. Such signature is then matched with the signatures in the database to determine the grating shape parameters of the structure.