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127 条记录 (耗时 0.021 秒)

    Washing machine and method of controlling spin-drying thereof
    31.
    发明授权
    Washing machine and method of controlling spin-drying thereof 有权
    洗衣机及其旋转干燥方法

    公开(公告)号：US08893341B2

    公开(公告)日：2014-11-25

    申请号：US12585243

    申请日：2009-09-09

    申请人： Chan Woo Park ,  Sang Ho Seo ,  Seok In Hong ,  Jae Won Lee ,  Do Yeon Kim ,  Dong Woo Shin

    发明人： Chan Woo Park ,  Sang Ho Seo ,  Seok In Hong ,  Jae Won Lee ,  Do Yeon Kim ,  Dong Woo Shin

    IPC分类号： D06F37/24 ,  D06F35/00 ,  D06F37/20

    CPC分类号： D06F37/203 ,  D06F37/245

    摘要： Disclosed are a washing machine and a method of controlling spin-drying of the washing machine. The method changes the acceleration gradient of the drum passing a resonance point, i.e., the resonance point passing gradient of the drum, when the imbalance of the laundry due to the excessive vibration of the tub is sensed when passing a resonance point region (generally within 100 RPM, approximately 50˜80 RPM, after the entry into the spin-drying cycle) in the spin-drying cycle. Thus the position of the balancer is changed according to the imbalance of the laundry.

    摘要翻译： 公开了洗衣机和控制洗衣机的旋转干燥的方法。 该方法通过谐振点的加速度梯度，即当鼓通过谐振点区域（通常在 100rpm，进入旋转干燥循环后约为50〜80RPM）。 因此，平衡器的位置根据衣物的不平衡而改变。

    Structure of overhead lamp and mounting bracket for constructional vehicle
    32.
    发明授权
    Structure of overhead lamp and mounting bracket for constructional vehicle 有权
    架空灯和结构车辆的安装支架的结构

    公开(公告)号：US08029173B2

    公开(公告)日：2011-10-04

    申请号：US12379629

    申请日：2009-02-26

    申请人： In-Hong Ko

    发明人： In-Hong Ko

    IPC分类号： F21S8/00

    CPC分类号： B60Q1/0483

    摘要： A structure of overhead lamp and mounting bracket for constructional vehicle has developed to tilt the illuminating angle by controlling the position of slits at the lateral sides of bracket. The lamp is securely fixing at the controlled position at one of 4 positions and the position controlling slits. The main case is securely fixed to the bracket by installing a connection screw and a hinge bolt for restricting unwanted rotation of the hinge bolt. Accordingly, since a position controlling rib having a position controlling slit is extended rearward from side supporters, the illumination angle can be controlled within a greater range. The main case can be supported at 4 points through the plurality of position controlling slits. Furthermore, by fitting the connection screw with an outer circumferential recess of a hinge bolt fastening lever, rotational separation of the hinge bolt and change of the illumination angle of the main case can be prevented.

    摘要翻译： 已经开发了用于建筑车辆的架空灯和安装支架的结构，通过控制支架侧面的狭缝位置来倾斜照明角度。 灯在4个位置和位置控制狭缝之一处牢固地固定在受控位置。 主壳体通过安装连接螺钉和铰链螺栓牢固地固定到支架上，以限制铰链螺栓的不必要的旋转。 因此，由于具有位置控制狭缝的位置控制肋从侧支撑件向后延伸，所以可以将照明角度控制在更大的范围内。 主壳体可以通过多个位置控制狭缝支撑在4个点处。 此外，通过将连接螺钉与铰链螺栓紧固杆的外周凹部嵌合，可以防止铰链螺栓的旋转分离和主壳体的照明角度的变化。

    LED lamp
    34.
    外观设计
    LED lamp 有权

    公开(公告)号：USD607587S1

    公开(公告)日：2010-01-05

    申请号：US29311691

    申请日：2009-05-26

    申请人： In-Hong Ko

    设计人： In-Hong Ko

    Semiconductor device having shared contact and fabrication method thereof
    38.
    发明授权
    Semiconductor device having shared contact and fabrication method thereof 有权

    公开(公告)号：US07064026B2

    公开(公告)日：2006-06-20

    申请号：US11143194

    申请日：2005-06-01

    申请人： Do-Hyung Kim ,  Jung-In Hong

    发明人： Do-Hyung Kim ,  Jung-In Hong

    IPC分类号： H01L21/8238

    CPC分类号： H01L21/823425 ,  H01L21/76895 ,  H01L21/823475 ,  Y10S257/90 ,  Y10S257/903

    摘要： Semiconductor devices and methods of fabrication. A device includes a semiconductor substrate, a gate electrode insulated from the semiconductor substrate by a gate insulation layer, LDD-type source/drain regions formed at both sides of the gate electrode, an interlayer insulation layer formed over the gate electrode and the substrate, and a shared contact piercing the interlayer insulation layer and contacting the gate electrode and one of the LDD-type source/drain regions including at least a part of a lightly doped drain region. Multiple-layer spacers are formed on both sides of the gate structure and used as a mask in forming the LDD-type regions. At least one layer of the spacer is removed in the contact opening to widen the opening to receive a contact plug.

    Sub-access point, system, and method for adjusting power of transmission signal
    39.
    发明申请
    Sub-access point, system, and method for adjusting power of transmission signal 有权
    子接入点，系统和调整传输信号功率的方法

    公开(公告)号：US20060083206A1

    公开(公告)日：2006-04-20

    申请号：US11252738

    申请日：2005-10-19

    申请人： In-hong Min

    发明人： In-hong Min

    IPC分类号： H04Q7/24

    CPC分类号： H04B17/318

    摘要： A sub-access point (AP), system, and method for adjusting a power level of a transmission signal, and more particularly, in which the power level of a transmission signal output from the sub-AP is adjusted based on received signal strength indicator (RSSI) readings and frame error rate (FER) of a main AP, thereby eliminating shadow areas and minimizing interference between the main AP and the sub-AP. The sub-AP includes a reception unit which receives a beacon frame and a data frame from a main AP, a RSSI checking unit which checks an RSSI of the main AP, a FER checking unit which checks an FER, and a control unit which determines a power level at which a transmission signal is to be transmitted based on the identified RSSI and the identified FER and causes a transmission signal to be output at the determined power level.

    摘要翻译： 一种用于调整发送信号的功率电平的子接入点（AP），系统和方法，更具体地说，其中基于接收到的信号强度指示符来调整从子AP输出的发送信号的功率电平 （RSSI）读数和主AP的帧错误率（FER），从而消除阴影区域并最大限度地减少主AP和子AP之间的干扰。 子AP包括从主AP接收信标帧和数据帧的接收单元，检查主AP的RSSI的RSSI检查单元，检查FER的FER检查单元以及确定 基于所识别的RSSI和所识别的FER来发送发送信号的功率电平，并使得以所确定的功率电平输出发送信号。

    Semiconductor device having shared contact and fabrication method thereof
    40.
    发明授权
    Semiconductor device having shared contact and fabrication method thereof 有权
    具有共享接触的半导体器件及其制造方法

    公开(公告)号：US06927461B2

    公开(公告)日：2005-08-09

    申请号：US10112413

    申请日：2002-03-29

    申请人： Do-Hyung Kim ,  Jung-In Hong

    发明人： Do-Hyung Kim ,  Jung-In Hong

    IPC分类号： H01L21/28 ,  H01L21/768 ,  H01L21/8234 ,  H01L26/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

    CPC分类号： H01L21/823425 ,  H01L21/76895 ,  H01L21/823475 ,  Y10S257/90 ,  Y10S257/903

    摘要： Semiconductor devices and methods of fabrication. A device includes a semiconductor substrate, a gate electrode insulated from the semiconductor substrate by a gate insulation layer, LDD-type source/drain regions formed at both sides of the gate electrode, an interlayer insulation layer formed over the gate electrode and the substrate, and a shared contact piercing the interlayer insulation layer and contacting the gate electrode and one of the LDD-type source/drain regions including at least a part of a lightly doped drain region. Multiple-layer spacers are formed on both sides of the gate structure and used as a mask in forming the LDD-type regions. At least one layer of the spacer is removed in the contact opening to widen the opening to receive a contact plug.

    摘要翻译： 半导体器件和制造方法。 一种器件包括半导体衬底，通过栅极绝缘层与半导体衬底绝缘的栅电极，形成在栅电极两侧的LDD型源/漏区，形成在栅电极和衬底上的层间绝缘层， 以及共享接触件，穿透所述层间绝缘层，并且使所述栅极电极和包括至少一部分轻掺杂漏极区域的LDD型源极/漏极区域中的一个接触。 在栅极结构的两侧形成多层间隔物，并在形成LDD型区域中用作掩模。 在接触开口中移除至少一层间隔件以加宽开口以接收接触塞。