公开(公告)号：US20110311668A1

公开(公告)日：2011-12-22

申请号：US13221639

申请日：2011-08-30

Applicant: Jongho Lee

Inventor： Jongho Lee

IPC: B29C45/14

CPC classification number: B29C45/1635 ,  B29C45/27 ,  B29L2031/3005 ,  B60R13/0243

Abstract: A first mold has a core passage, and first and second cavities in fluid communication with each other at the core passage. A second mold has first and second nozzles therein that inject first and second resins to the first and second cavities, respectively. The core member is slidable within the core passage to provide or block the fluid communication between the cavities, and has a third nozzle therein to inject a third resin to the core passage. The first and second resins are injected into the cavities. The core member is moved to block the fluid communication between the cavities, before injecting the first and second resins is completed. The third resin is injected while moving the core member to provide the fluid communication, after injecting the first and second resins is completed. The molds are separated, thereby yielding a single molded product, such as a vehicle door trim.

Abstract translation: 第一模具具有芯通道，并且在芯通道处彼此流体连通的第一和第二空腔。 第二模具在其中具有分别将第一和第二树脂注入到第一和第二空腔中的第一和第二喷嘴。 芯构件可在芯通道内滑动以提供或阻挡空腔之间的流体连通，并且其中具有第三喷嘴以将第三树脂注入到芯通道。 将第一和第二树脂注入到空腔中。 在完成注入第一和第二树脂之前，移动芯构件以阻止空腔之间的流体连通。 在移动芯部件以提供流体连通时注入第三树脂，在完成注入第一和第二树脂之后。 模具被分离，从而产生单个模制产品，例如车门装饰件。

公开(公告)号：US20050074982A1

公开(公告)日：2005-04-07

申请号：US10999608

申请日：2004-11-29

Applicant: Jongho Lee ,  Nae-In Lee

Inventor： Jongho Lee ,  Nae-In Lee

IPC: H01L21/8247 ,  H01L21/02 ,  H01L21/28 ,  H01L21/31 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/105 ,  H01L27/108 ,  H01L27/115 ,  H01L29/51 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  H01L29/94 ,  H01L21/00

CPC classification number: H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L28/56 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/7881 ,  H01L29/94

Abstract: A multi-layer dielectric layer structure for a semiconductor device. The multi-layer dielectric layer structure comprises a silicate interface layer having a dielectric constant greater than that of silicon nitride and a high-k dielectric layer overlying the silicate interface layer. The high-k dielectric layer comprises one or more ordered pairs of first and second layers. With the present invention, the dielectric constant of the high-k dielectric layer can be optimized while improving interface characteristics. With a higher crystallization temperature realized by forming the multi-layer structure, each of whose layers is not more than the critical thickness, leakage current can be reduced, thereby improving device performance.