公开(公告)号：US09676227B2

公开(公告)日：2017-06-13

申请号：US14201009

申请日：2014-03-07

申请人： Jesse A. Frantz ,  Jason D. Myers ,  Robel Y. Bekele ,  Jasbinder S. Sanghera

发明人： Jesse A. Frantz ,  Jason D. Myers ,  Robel Y. Bekele ,  Jasbinder S. Sanghera

IPC分类号： B44C1/22 ,  H01L31/0392 ,  H01L31/18 ,  H01L21/02

CPC分类号： B44C1/227 ,  H01L21/02002 ,  H01L31/03928 ,  H01L31/1896 ,  Y02E10/541

摘要： A method for forming a wet-etchable, sacrificial lift-off layer or layers compatible with high temperature processing, a sacrificial layer, defined as consisting of a single film of one material or multiple films of multiple materials, that can tolerate high temperatures, is deposited on a substrate, called the original substrate, by sputtering or another suitable technique (e.g. evaporation, pulsed laser deposition, wet chemistry, etc.). Intermediate steps result in a lift-off layer attached to the lift-off substrate, that allow for separating the product from the original substrate.

公开(公告)号：US20150295106A1

公开(公告)日：2015-10-15

申请号：US14682574

申请日：2015-04-09

申请人： Walter J. Dressick ,  Jasbinder S. Sanghera ,  Woohong Kim ,  Colin C. Baker ,  Jason D. Myers ,  Jesse A. Frantz

发明人： Walter J. Dressick ,  Jasbinder S. Sanghera ,  Woohong Kim ,  Colin C. Baker ,  Jason D. Myers ,  Jesse A. Frantz

IPC分类号： H01L31/032 ,  H01L31/18 ,  B01J6/00 ,  H01L31/0352

CPC分类号： H01L31/0322 ,  H01L21/02565 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02614 ,  H01L21/02628 ,  H01L31/0352 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

摘要： A composition of matter and method of forming copper indium gallium sulfide (CIGS), copper indium gallium selenide (CIGSe), or copper indium gallium telluride thin film via conversion of layer-by-layer (LbL) assembled Cu—In—Ga oxide (CIGO) nanoparticles and polyelectrolytes. CIGO nanoparticles are created via a flame-spray pyrolysis method using metal nitrate precursors, subsequently coated with polyallylamine (PAH), and dispersed in aqueous solution. Multilayer films are assembled by alternately dipping a substrate into a solution of either polydopamine (PDA) or polystyrenesulfonate (PSS) and then in the CIGO-PAH dispersion to fabricate films as thick as 1-2 microns. After LbL deposition, films are oxidized to remove polymer and sulfurized, selenized, or tellurinized to convert CIGO to CIGS, CIGSe, or copper indium gallium telluride.

摘要翻译： 通过层叠（LbL）组装的Cu-In-Ga氧化物（LbL）的转化，形成铜铟镓硫化物（CIGS），铜铟镓硒（CIGSe）或铜铟镓碲化物薄膜的物质组成和方法 CIGO）纳米粒子和聚电解质。 CIGO纳米颗粒通过使用金属硝酸盐前体的火焰喷射热解法产生，随后用聚烯丙胺（PAH）涂布并分散在水溶液中。 通过交替地将基底浸入聚多巴胺（PDA）或聚苯乙烯磺酸盐（PSS）的溶液中，然后在CIGO-PAH分散体中以制备厚度为1-2微米的膜来组装多层膜。 在LbL沉积后，将膜氧化以除去聚合物并进行硫化，硒化或碲化，以将CIGO转化为CIGS，CIGSe或碲化铟镓。

公开(公告)号：US20150075620A1

公开(公告)日：2015-03-19

申请号：US14549778

申请日：2014-11-21

申请人： Jesse A. Frantz ,  Jasbinder S. Sanghera ,  Robel Y. Bekele ,  Vinh Q. Nguyen ,  Ishwar D. Aggarwal ,  Allan J. Bruce ,  Michael Cyrus ,  Sergey V. Frolov

发明人： Jesse A. Frantz ,  Jasbinder S. Sanghera ,  Robel Y. Bekele ,  Vinh Q. Nguyen ,  Ishwar D. Aggarwal ,  Allan J. Bruce ,  Michael Cyrus ,  Sergey V. Frolov

IPC分类号： H01L31/18 ,  H01L31/0392

CPC分类号： H01J37/3429 ,  C23C14/0623 ,  C23C14/087 ,  C23C14/3414 ,  C23C14/3464 ,  H01J37/3414 ,  H01L21/02568 ,  H01L21/02631 ,  H01L31/0368 ,  H01L31/03923 ,  H01L31/18 ,  Y02E10/541

摘要： A method and apparatus for forming a thin film of a copper indium gallium selenide (CIGS)-type material are disclosed. The method includes providing first and second targets in a common sputtering chamber. The first target includes a source of CIGS material, such as an approximately stoichiometric polycrystalline CIGS material, and the second target includes a chalcogen, such as selenium, sulfur, tellurium, or a combination of these elements. The second target provides an excess of chalcogen in the chamber. This can compensate, at least in part, for the loss of chalcogen from the CIGS-source in the first target, resulting in a thin film with a controlled stoichiometry which provides effective light absorption when used in a solar cell.

摘要翻译： 公开了一种形成铜铟镓硒（CIGS）型材料的薄膜的方法和装置。 该方法包括在公共溅射室中提供第一和第二靶。 第一个目标包括CIGS材料源，例如近似化学计量的多晶CIGS材料，第二个靶材包括硫属元素，如硒，硫，碲或这些元素的组合。 第二个目标是在室内提供过量的硫属元素。 这可以至少部分地补偿来自第一靶中的CIGS源的硫属元素的损失，导致具有受控化学计量的薄膜，当用于太阳能电池时可提供有效的光吸收。

公开(公告)号：US08894826B2

公开(公告)日：2014-11-25

申请号：US12884524

申请日：2010-09-17

申请人： Jesse A. Frantz ,  Jasbinder S. Sanghera ,  Robel Y. Bekele ,  Vinh Q Nguyen ,  Ishwar D. Aggarwal ,  Allan J. Bruce ,  Michael Cyrus ,  Sergey V. Frolov

发明人： Jesse A. Frantz ,  Jasbinder S. Sanghera ,  Robel Y. Bekele ,  Vinh Q Nguyen ,  Ishwar D. Aggarwal ,  Allan J. Bruce ,  Michael Cyrus ,  Sergey V. Frolov

IPC分类号： C23C14/00 ,  C23C14/32 ,  C25B9/00 ,  C25B11/00 ,  C25B13/00 ,  B05D5/06 ,  B05D5/12 ,  H01L21/00 ,  C23C14/06 ,  H01L31/18 ,  H01L31/0368 ,  H01L31/0392 ,  H01L21/02 ,  C23C14/34

CPC分类号： H01J37/3429 ,  C23C14/0623 ,  C23C14/087 ,  C23C14/3414 ,  C23C14/3464 ,  H01J37/3414 ,  H01L21/02568 ,  H01L21/02631 ,  H01L31/0368 ,  H01L31/03923 ,  H01L31/18 ,  Y02E10/541

摘要： A method and apparatus for forming a thin film of a copper indium gallium selenide (CIGS)-type material are disclosed. The method includes providing first and second targets in a common sputtering chamber. The first target includes a source of CIGS material, such as an approximately stoichiometric polycrystalline CIGS material, and the second target includes a chalcogen, such as selenium, sulfur, tellurium, or a combination of these elements. The second target provides an excess of chalcogen in the chamber. This can compensate, at least in part, for the loss of chalcogen from the CIGS-source in the first target, resulting in a thin film with a controlled stoichiometry which provides effective light absorption when used in a solar cell.

摘要翻译： 公开了一种形成铜铟镓硒（CIGS）型材料的薄膜的方法和装置。 该方法包括在公共溅射室中提供第一和第二靶。 第一个目标包括CIGS材料源，例如近似化学计量的多晶CIGS材料，第二个靶材包括硫属元素，如硒，硫，碲或这些元素的组合。 第二个目标是在室内提供过量的硫属元素。 这可以至少部分地补偿来自第一靶中的CIGS源的硫属元素的损失，导致具有受控化学计量的薄膜，当用于太阳能电池时可提供有效的光吸收。