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公开(公告)号：US09608146B2
公开(公告)日：2017-03-28
申请号：US14682574
申请日：2015-04-09
申请人： Walter J. Dressick , Jasbinder S. Sanghera , Woohong Kim , Colin C. Baker , Jason D. Myers , Jesse A. Frantz
发明人： Walter J. Dressick , Jasbinder S. Sanghera , Woohong Kim , Colin C. Baker , Jason D. Myers , Jesse A. Frantz
IPC分类号： H01L31/032 , H01L21/02
CPC分类号： H01L31/0322 , H01L21/02565 , H01L21/02568 , H01L21/02601 , H01L21/02614 , H01L21/02628 , H01L31/0352 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： A composition of matter and method of forming copper indium gallium sulfide (CIGS), copper indium gallium selenide (CIGSe), or copper indium gallium telluride thin film via conversion of layer-by-layer (LbL) assembled Cu—In—Ga oxide (CIGO) nanoparticles and polyelectrolytes. CIGO nanoparticles are created via a flame-spray pyrolysis method using metal nitrate precursors, subsequently coated with polyallylamine (PAH), and dispersed in aqueous solution. Multilayer films are assembled by alternately dipping a substrate into a solution of either polydopamine (PDA) or polystyrenesulfonate (PSS) and then in the CIGO-PAH dispersion to fabricate films as thick as 1-2 microns. After LbL deposition, films are oxidized to remove polymer and sulfurized, selenized, or tellurinized to convert CIGO to CIGS, CIGSe, or copper indium gallium telluride.
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2.发明申请公开(公告)号：US20150295106A1
公开(公告)日：2015-10-15
申请号：US14682574
申请日：2015-04-09
申请人： Walter J. Dressick , Jasbinder S. Sanghera , Woohong Kim , Colin C. Baker , Jason D. Myers , Jesse A. Frantz
发明人： Walter J. Dressick , Jasbinder S. Sanghera , Woohong Kim , Colin C. Baker , Jason D. Myers , Jesse A. Frantz
IPC分类号： H01L31/032 , H01L31/18 , B01J6/00 , H01L31/0352
CPC分类号： H01L31/0322 , H01L21/02565 , H01L21/02568 , H01L21/02601 , H01L21/02614 , H01L21/02628 , H01L31/0352 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： A composition of matter and method of forming copper indium gallium sulfide (CIGS), copper indium gallium selenide (CIGSe), or copper indium gallium telluride thin film via conversion of layer-by-layer (LbL) assembled Cu—In—Ga oxide (CIGO) nanoparticles and polyelectrolytes. CIGO nanoparticles are created via a flame-spray pyrolysis method using metal nitrate precursors, subsequently coated with polyallylamine (PAH), and dispersed in aqueous solution. Multilayer films are assembled by alternately dipping a substrate into a solution of either polydopamine (PDA) or polystyrenesulfonate (PSS) and then in the CIGO-PAH dispersion to fabricate films as thick as 1-2 microns. After LbL deposition, films are oxidized to remove polymer and sulfurized, selenized, or tellurinized to convert CIGO to CIGS, CIGSe, or copper indium gallium telluride.
摘要翻译： 通过层叠（LbL）组装的Cu-In-Ga氧化物（LbL）的转化，形成铜铟镓硫化物（CIGS），铜铟镓硒（CIGSe）或铜铟镓碲化物薄膜的物质组成和方法 CIGO）纳米粒子和聚电解质。 CIGO纳米颗粒通过使用金属硝酸盐前体的火焰喷射热解法产生，随后用聚烯丙胺（PAH）涂布并分散在水溶液中。 通过交替地将基底浸入聚多巴胺（PDA）或聚苯乙烯磺酸盐（PSS）的溶液中，然后在CIGO-PAH分散体中以制备厚度为1-2微米的膜来组装多层膜。 在LbL沉积后，将膜氧化以除去聚合物并进行硫化，硒化或碲化，以将CIGO转化为CIGS，CIGSe或碲化铟镓。
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公开(公告)号：US20140098411A1
公开(公告)日：2014-04-10
申请号：US13629641
申请日：2012-09-28
申请人： Woohong Kim , Guillermo R. Villalobos , Colin C. Baker , Jesse A. Frantz , Leslie Brandon Shaw , Bryan Sadowski , Jasbinder S. Sanghera , Ishwar D. Aggarwal
发明人： Woohong Kim , Guillermo R. Villalobos , Colin C. Baker , Jesse A. Frantz , Leslie Brandon Shaw , Bryan Sadowski , Jasbinder S. Sanghera , Ishwar D. Aggarwal
IPC分类号： H01S3/16
CPC分类号： H01S3/1603 , H01S3/094076 , H01S3/09415 , H01S3/1618 , H01S3/163 , H01S3/1685
摘要： A method for making a rare earth doped polycrystalline ceramic laser gain medium by hot pressing a rare earth doped polycrystalline powder where the doping concentration is greater than 2% and up to 10% and where the grain size of the final ceramic is greater than 2 μm. The polycrystalline powder can be Lu2O3, Y2O3, or Sc2O3, and the rare earth dopant can be Yb3+, Er3+, Tm3+, or Ho3+. Also disclosed is the related rare earth doped polycrystalline ceramic laser gain medium prepared by this method.
摘要翻译： 一种通过热压稀土掺杂多晶粉末制造稀土掺杂多晶陶瓷激光增益介质的方法，其中掺杂浓度大于2％且高达10％，其中最终陶瓷的晶粒尺寸大于2μm 。 多晶粉末可以是Lu2O3，Y2O3或Sc2O3，稀土掺杂剂可以是Yb3 +，Er3 +，Tm3 +或Ho3 +。 还公开了通过该方法制备的相关稀土掺杂多晶陶瓷激光增益介质。
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公开(公告)号：US09705012B2
公开(公告)日：2017-07-11
申请号：US14661165
申请日：2015-03-18
IPC分类号： H01L31/0216 , H01L31/032 , H01L31/0368 , C23C14/06 , H01L31/0384
CPC分类号： H01L31/02167 , C23C14/0623 , H01L31/032 , H01L31/0368 , H01L31/0384 , Y02E10/50
摘要： A method for passivating the surface of crystalline iron disulfide (FeS2) by encapsulating it in crystalline zinc sulfide (ZnS). Also disclosed is the related product comprising FeS2 encapsulated by ZnS in which the sulfur atoms at the FeS2 surfaces are passivated. Additionally disclosed is a photovoltaic (PV) device incorporating FeS2 encapsulated by ZnS.
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5.发明申请METHOD OF PASSIVATING AN IRON DISULFIDE SURFACE VIA ENCAPSULATION IN ZINC SULFIDE 有权通过硫化锌中的渗透处理铁矿石表面的方法公开(公告)号：US20150270412A1
公开(公告)日：2015-09-24
申请号：US14661165
申请日：2015-03-18
IPC分类号： H01L31/0216 , C23C14/06 , H01L31/0368 , H01L31/18 , H01L31/032
CPC分类号： H01L31/02167 , C23C14/0623 , H01L31/032 , H01L31/0368 , H01L31/0384 , Y02E10/50
摘要： A method for passivating the surface of crystalline iron disulfide (FeS2) by encapsulating it in crystalline zinc sulfide (ZnS). Also disclosed is the related product comprising FeS2 encapsulated by ZnS in which the sulfur atoms at the FeS2 surfaces are passivated. Additionally disclosed is a photovoltaic (PV) device incorporating FeS2 encapsulated by ZnS.
摘要翻译： 通过将结晶二硫化铁（FeS 2）的表面封装在结晶硫化锌（ZnS）中来钝化表面的方法。 还公开了包含由ZnS包封的FeS 2的相关产物，其中FeS2表面的硫原子被钝化。 另外公开了掺入由ZnS封装的FeS2的光伏（PV）装置。
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6.发明授权Barium copper sulfur fluoride transparent conductive thin films and bulk material 有权钡铜硫氟化物透明导电薄膜和散装材料公开(公告)号：US08728284B2
公开(公告)日：2014-05-20
申请号：US13412692
申请日：2012-03-06
IPC分类号： C23C14/20
CPC分类号： H01B1/06 , C01B9/08 , C23C14/06 , C23C14/3414 , C23C14/5806 , Y10T428/31533 , Y10T428/31721 , Y10T428/31786
摘要： A bulk barium copper sulfur fluoride (BCSF) material can be made by combining Cu2S, BaS and BaF2, heating the ampoule between 400 and 550° C. for at least two hours, and then heating the ampoule at a temperature between 550 and 950° C. for at least two hours. The BCSF material may be doped with potassium, rubidium, or sodium. Additionally, a p-type transparent conductive material can comprise a thin film of BCSF on a substrate where the film has a conductivity of at least 1 S/cm. The substrate may be a plastic substrate, such as a polyethersulfone, polyethylene terephthalate, polyimide, or some other suitable plastic or polymeric substrate.
摘要翻译： 可以通过组合Cu2S，BaS和BaF2，在400和550℃之间加热安瓿至少两个小时，然后在550和950℃之间的温度下加热安瓿，制成块状铜铜硫化铜（BCSF） C.至少两个小时。 BCSF材料可掺杂有钾，铷或钠。 此外，p型透明导电材料可以在衬底上包含BCSF的薄膜，其中该膜的导电率至少为1S / cm。 基底可以是塑料基底，例如聚醚砜，聚对苯二甲酸乙二醇酯，聚酰亚胺或一些其它合适的塑料或聚合物基材。
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7.发明申请公开(公告)号：US20140220357A1
公开(公告)日：2014-08-07
申请号：US14245025
申请日：2014-04-04
CPC分类号： H01B1/06 , C01B9/08 , C23C14/06 , C23C14/3414 , C23C14/5806 , Y10T428/31533 , Y10T428/31721 , Y10T428/31786
摘要： A p-type transparent conductive material can comprise a thin film of BCSF on a substrate where the film has a conductivity of at least 1 S/cm. The substrate may be a plastic substrate, such as a polyethersulfone, polyethylene terephthalate, polyimide, or some other suitable plastic or polymeric substrate.
摘要翻译： p型透明导电材料可以在衬底上包括BCSF的薄膜，其中膜具有至少1S / cm的电导率。 基底可以是塑料基底，例如聚醚砜，聚对苯二甲酸乙二醇酯，聚酰亚胺或一些其它合适的塑料或聚合物基材。
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8.发明申请公开(公告)号：US20100072465A1
公开(公告)日：2010-03-25
申请号：US12250808
申请日：2008-10-14
CPC分类号： H01B1/06 , C01B9/08 , C23C14/06 , C23C14/3414 , C23C14/5806 , Y10T428/31533 , Y10T428/31721 , Y10T428/31786
摘要： The present invention is generally directed to a bulk barium copper sulfur fluoride (BCSF) material made by combining Cu2S, BaS and BaF2, heating the ampoule between 400 and 550 ° C. for at least two hours, and then heating the ampoule at a temperature between 550 and 950 ° C. for at least two hours. The BCSF material may be doped with potassium, rubidium, or sodium. The present invention also provides for a BCSF transparent conductive thin film made by forming a sputter target by either hot pressing bulk BCSF or hot pressing Cu2S, BaS and BaF2 powders and sputtering a BCSF thin film from the target onto a substrate. The present invention is further directed to a p-type transparent conductive material comprising a thin film of BCSF on a substrate where the film has a conductivity of at least 1 S/cm. The substrate may be a plastic substrate, such as a polyethersulfone, polyethylene terephthalate, polyimide, or some other suitable plastic or polymeric substrate.
摘要翻译： 本发明一般涉及通过组合Cu2S，BaS和BaF2制备的块状钡铜氟化硫（BCSF）材料，将安瓿在400和550℃之间加热至少2小时，然后在温度下加热安瓿 在550和950℃之间至少2小时。 BCSF材料可掺杂有钾，铷或钠。 本发明还提供了通过热压体BCSF或热压Cu2S，BaS和BaF2粉末形成溅射靶并将BCSF薄膜从靶溅射到衬底上而制成的BCSF透明导电薄膜。 本发明进一步涉及一种p型透明导电材料，其包括在衬底上的BCSF薄膜，其中该膜的导电率至少为1S / cm。 基底可以是塑料基底，例如聚醚砜，聚对苯二甲酸乙二醇酯，聚酰亚胺或一些其它合适的塑料或聚合物基材。
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公开(公告)号：US20140239563A1
公开(公告)日：2014-08-28
申请号：US14075239
申请日：2013-11-08
申请人： Jason D. Myers , Jesse A. Frantz , Guillermo R. Villalobos , Jasbinder S. Sanghera , Bryan Sadowski , Robel Y. Bekele
发明人： Jason D. Myers , Jesse A. Frantz , Guillermo R. Villalobos , Jasbinder S. Sanghera , Bryan Sadowski , Robel Y. Bekele
IPC分类号： B22D41/02
CPC分类号： C23C14/35 , B22D41/02 , C23C14/0635 , C23C14/0641 , C23C14/0647 , C23C14/08 , C23C14/081 , F27B14/10 , F27B2014/104
摘要： A method of containing molten aluminum using non-wetting materials comprising depositing MgAl2O4, or one selected from an oxide, Al2O3, nitride, AlN, BN, carbide, and SiC, onto a crucible. An apparatus for containment of molten aluminum using non-wetting materials comprising a layer of MgAl2O4, or one selected from an oxide, Al2O3, nitride, AlN, BN, carbide, and SiC, deposited onto a crucible.
摘要翻译： 一种使用非润湿材料包含熔融铝的方法，包括将MgAl 2 O 4或选自氧化物，Al 2 O 3，氮化物，AlN，BN，碳化物和SiC中的一种沉积到坩埚上。 使用非湿润材料来容纳熔融铝的装置，其包括沉积在坩埚上的MgAl 2 O 4层或选自氧化物，Al 2 O 3，氮化物，AlN，BN，碳化物和SiC的一层。
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10.发明授权Barium copper sulfur fluoride transparent conductive thin films and bulk material 失效钡铜硫氟化物透明导电薄膜和散装材料公开(公告)号：US08158096B2
公开(公告)日：2012-04-17
申请号：US12250808
申请日：2008-10-14
IPC分类号： C01B9/00
CPC分类号： H01B1/06 , C01B9/08 , C23C14/06 , C23C14/3414 , C23C14/5806 , Y10T428/31533 , Y10T428/31721 , Y10T428/31786
摘要： The present invention is generally directed to a bulk barium copper sulfur fluoride (BCSF) material made by combining Cu2S, BaS and BaF2, heating the ampoule between 400 and 550 ° C. for at least two hours, and then heating the ampoule at a temperature between 550 and 950 ° C. for at least two hours. The BCSF material may be doped with potassium, rubidium, or sodium. The present invention also provides for a BCSF transparent conductive thin film made by forming a sputter target by either hot pressing bulk BCSF or hot pressing Cu2S, BaS and BaF2 powders and sputtering a BCSF thin film from the target onto a substrate. The present invention is further directed to a p-type transparent conductive material comprising a thin film of BCSF on a substrate where the film has a conductivity of at least 1 S/cm. The substrate may be a plastic substrate, such as a polyethersulfone, polyethylene terephthalate, polyimide, or some other suitable plastic or polymeric substrate.
摘要翻译： 本发明一般涉及通过组合Cu2S，BaS和BaF2制备的块状钡铜氟化硫（BCSF）材料，将安瓿在400和550℃之间加热至少2小时，然后在温度下加热安瓿 在550和950℃之间至少2小时。 BCSF材料可掺杂有钾，铷或钠。 本发明还提供了通过热压体BCSF或热压Cu2S，BaS和BaF2粉末形成溅射靶并将BCSF薄膜从靶溅射到衬底上而制成的BCSF透明导电薄膜。 本发明进一步涉及一种p型透明导电材料，其包括在衬底上的BCSF薄膜，其中该膜的导电率至少为1S / cm。 基底可以是塑料基底，例如聚醚砜，聚对苯二甲酸乙二醇酯，聚酰亚胺或一些其它合适的塑料或聚合物基材。
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